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1. 发明申请

US20070029281A1 Gas for removing deposit and removal method using same 有权
公开(公告)号：US20070029281A1
公开(公告)日：2007-02-08
申请号：US11543968
申请日：2006-10-06
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： C03C25/68
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.

2. 发明授权

US06659111B1 Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas 失效
标题翻译：清洁气体和通过使清洁气体流动来清洁真空处理装置的方法
公开(公告)号：US06659111B1
公开(公告)日：2003-12-09
申请号：US09480680
申请日：2000-01-11
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
IPC分类号： B08B900
CPC分类号： C23C16/4405 , C23F1/12 , H01L21/28556 , Y10S438/905
摘要： A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.
摘要翻译：清洁气体包括浓度大于或等于1体积％的HF气体和浓度范围为0.5至99体积％的含氧气体。含氧气体包括O 2气体，O 3气体，N 2 O气体，NO气体，CO气体和CO 2气体中的至少一种。采用清洁气体除去在真空处理装置中产生的沉积材料，用于制造Ti，W，Ta，Ru，Ir及其化合物及其合金中的至少一种的薄膜。

3. 发明授权

US5069724A Method of cleaning carbon member contaminated with inorganic deposits 失效
标题翻译：清洁被无机沉积物污染的碳成员的方法
公开(公告)号：US5069724A
公开(公告)日：1991-12-03
申请号：US548412
申请日：1990-07-05
申请人： Yoshiyuki Kobayashi , Takashi Suehaga , Isamu Mouri , Tukasa Fujii
发明人： Yoshiyuki Kobayashi , Takashi Suehaga , Isamu Mouri , Tukasa Fujii
IPC分类号： C01B9/08 , C04B41/53 , C04B41/91 , C11D7/50 , H01L21/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/67028 , C04B41/009 , C04B41/5346 , C04B41/91
摘要： Carbon members contaminated with deposits of metals and/or metal compounds such as nitrides or carbides are thoroughly cleaned with little adverse influences on the carbon members themselves by treating the contaminated carbon members with a cleaning gas consisting of 1-20 vol % of CIF.sub.3 gas and the balance of an inactive diluent gas at a temperature in the range from 200.degree. to 300.degree. C. For example, this cleaning method is applicable to graphite parts of apparatus for forming thin films in the manufacture of semiconductor devices.
摘要翻译：被金属和/或金属化合物如氮化物或碳化物沉积物污染的碳成员通过用1-20体积％的CIF 3气体组成的清洁气体处理被污染的碳构件而对碳构件本身几乎没有不利影响而被彻底清洁，在200℃至300℃的温度范围内的惰性稀释气体的平衡。例如，该清洁方法可应用于制造半导体器件中用于形成薄膜的设备的石墨部件。

4. 发明授权

US07744769B2 Gas for removing deposit and removal method using same 有权
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US07744769B2
公开(公告)日：2010-06-29
申请号：US11543968
申请日：2006-10-06
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

5. 发明授权

US07168436B2 Gas for removing deposit and removal method using same 有权
标题翻译：用于除去沉积物和除去方法的气体使用它
公开(公告)号：US07168436B2
公开(公告)日：2007-01-30
申请号：US10705532
申请日：2003-11-12
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi
IPC分类号： B08B9/00 , H01L21/00
CPC分类号： C03C15/00 , C03C17/00 , C03C2218/33 , C09K13/00 , C23F4/00 , H01L21/31116 , H01L21/32136 , Y10S438/905 , Y10S438/906
摘要： The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1–100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas. This method includes the step (a) bringing the gas into contact with the deposit, thereby to remove the deposit by a gas-solid reaction.
摘要翻译：本发明涉及通过气 - 固反应去除沉积物的气体。该气体包括被定义为在分子中具有至少一个OF基团的化合物的次氟酸盐。各种沉积物可以被气体除去，并且由于使用次氟酸盐，在清除沉积物之后，气体可以容易地在全球环境中变得不起作用。气体可以是用于清洁的清洁气体，例如用于制造半导体器件的设备的内部。该清洁气体包含1-100体积％的次氟酸盐。或者，本发明的气体可以是用于去除沉积在基板上的膜的不希望的部分的蚀刻气体。由于使用次氟酸盐，可以通过精确地由原始设计的这种蚀刻气体除去不想要的部分。本发明还涉及一种通过气体去除沉积物的方法。该方法包括步骤（a）使气体与沉积物接触，从而通过气固反应除去沉积物。

6. 发明授权

US6147006A Cleaning gas 有权
标题翻译：清洁气体
公开(公告)号：US6147006A
公开(公告)日：2000-11-14
申请号：US479057
申请日：2000-01-07
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima
IPC分类号： H01L21/31 , C23C16/44 , C23F1/12 , H01L21/304 , H01L21/306 , H01L21/302
CPC分类号： C23C16/4405 , H01L21/02049 , Y10S438/905
摘要： A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.
摘要翻译：一种清洁气体，其用于通过五乙氧基钽或四乙氧基硅烷的热分解除去形成在薄膜形成装置中的不需要的沉积材料，而不会损坏氧化硅膜形成装置或氧化钽膜形成装置的反应器，工具，部件和管道，成型装置。清洁气体包括HF气体和含氧气体，氟气，氟化氯气体，溴氟化物气体和碘化氟气体中的至少一种。

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