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    • 1. 发明授权
    • Tunable alkali metallic vapor laser
    • 可调式碱金属蒸汽激光
    • US4151486A
    • 1979-04-24
    • US776014
    • 1977-03-09
    • Irving ItzkanRobert T. V. Kung
    • Irving ItzkanRobert T. V. Kung
    • H01S3/227H01S3/30H01S3/094
    • H01S3/305H01S3/227
    • A tunable alkali metallic vapor laser system is disclosed. Stimulated Raman scattering (SRS) in a low pressure atomic alkali metallic vapor of potassium or cesium is utilized wherein the atomic vapor is provided and then primed to populate an intermediate level such as the 4P.sub.1/2 level for potassium and the 6P.sub.1/2 level for cesium from which the desired upper laser level is accessible. After the population is created at the intermediate level, it is pumped to a virtual level near the desired upper laser level by a tunable dye laser and, via the SRS process, generates the tunable output laser beam.
    • 公开了一种可调碱金属蒸气激光系统。 使用在钾或铯的低压原子碱金属蒸气中的受激拉曼散射(SRS),其中提供原子蒸气,然后引发以填充中等水平,例如钾的4P1 / 2水平和6P1 / 2水平 所需的上激光水平可从中获得的铯。 在中等水平创建人口后,通过可调谐的染料激光器将其泵送到所需上限激光水平附近的虚拟水平,并通过SRS过程产生可调输出激光束。
    • 6. 发明授权
    • Method for laser melting of silicon
    • 激光熔化硅的方法
    • US4468279A
    • 1984-08-28
    • US408393
    • 1982-08-16
    • Irving Itzkan
    • Irving Itzkan
    • C30B15/02C30B15/16
    • C30B15/16C30B15/02Y10S117/904
    • A method for laser melting of silicon for the production of boules pulled from a pool of liquid ultraclean or ultrapure silicon wherein the boules are used for producing silicon wafers suitable for use in the electronics field. A laser beam, preferably P polarized, is directed at an angle of about 88 degrees to the normal to the surface of silicon disposed in conventional melting apparatus. A suitable mirror is preferably provided to capture and reflect that portion of the laser beam reflected from the surface of the pool. Use of the present invention permits continuous operation by adding solid silicon and melting it at the point of impingement of the laser beam with up to about 96% absorption of laser energy at this point, thereby permitting the provision of heat in a very controlled manner in a continuous ultraclean silicon crystal growth process.
    • 一种用于激光熔化硅的方法,用于生产从液体超纯或超纯硅液池中抽出的毛坯,其中所述毛坯用于生产适用于电子领域的硅片。 优选P极化的激光束以与常规熔化装置中设置的硅表面法线约88度的角度相对。 优选地提供合适的反射镜以捕获并反射从池的表面反射的那部分激光束。 本发明的使用允许通过添加固体硅并在激光束的冲击点使其熔化,从而在该点处高达约96%的激光能量吸收,从而允许以非常受控的方式提供热量 连续超纯硅晶体生长工艺。