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    • 5. 发明授权
    • Method for laser melting of silicon
    • 激光熔化硅的方法
    • US4468279A
    • 1984-08-28
    • US408393
    • 1982-08-16
    • Irving Itzkan
    • Irving Itzkan
    • C30B15/02C30B15/16
    • C30B15/16C30B15/02Y10S117/904
    • A method for laser melting of silicon for the production of boules pulled from a pool of liquid ultraclean or ultrapure silicon wherein the boules are used for producing silicon wafers suitable for use in the electronics field. A laser beam, preferably P polarized, is directed at an angle of about 88 degrees to the normal to the surface of silicon disposed in conventional melting apparatus. A suitable mirror is preferably provided to capture and reflect that portion of the laser beam reflected from the surface of the pool. Use of the present invention permits continuous operation by adding solid silicon and melting it at the point of impingement of the laser beam with up to about 96% absorption of laser energy at this point, thereby permitting the provision of heat in a very controlled manner in a continuous ultraclean silicon crystal growth process.
    • 一种用于激光熔化硅的方法,用于生产从液体超纯或超纯硅液池中抽出的毛坯,其中所述毛坯用于生产适用于电子领域的硅片。 优选P极化的激光束以与常规熔化装置中设置的硅表面法线约88度的角度相对。 优选地提供合适的反射镜以捕获并反射从池的表面反射的那部分激光束。 本发明的使用允许通过添加固体硅并在激光束的冲击点使其熔化,从而在该点处高达约96%的激光能量吸收,从而允许以非常受控的方式提供热量 连续超纯硅晶体生长工艺。