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1. 发明授权

US07795606B2 Non-volatile memory cell with enhanced filament formation characteristics 有权
标题翻译：具有增强的细丝形成特性的非挥发性记忆体
公开(公告)号：US07795606B2
公开(公告)日：2010-09-14
申请号：US12261137
申请日：2008-10-30
申请人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
发明人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
IPC分类号： H01L29/04
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1675
摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.
摘要翻译：用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

2. 发明申请

US20100032636A1 NON-VOLATILE MEMORY CELL WITH ENHANCED FILAMENT FORMATION CHARACTERISTICS 有权
标题翻译：非易失性存储器，具有增强的光纤形成特性
公开(公告)号：US20100032636A1
公开(公告)日：2010-02-11
申请号：US12261137
申请日：2008-10-30
申请人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
发明人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1675
摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.
摘要翻译：用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

3. 发明申请

US20090289736A1 MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION 审中-公开
标题翻译：用于旋转传动的磁力开关
公开(公告)号：US20090289736A1
公开(公告)日：2009-11-26
申请号：US12125974
申请日：2008-05-23
申请人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
发明人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
IPC分类号： H01P1/10 , H01H53/00
CPC分类号： H01H59/0009 , H01H57/00
摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
摘要翻译：旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。该连接允许将旋转波从第一磁条传输到第二磁条。第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

4. 发明申请

US20100182837A1 MAGNETIC FLOATING GATE MEMORY 有权
标题翻译：磁性浮动门存储器
公开(公告)号：US20100182837A1
公开(公告)日：2010-07-22
申请号：US12355908
申请日：2009-01-19
申请人： Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
发明人： Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
IPC分类号： G11C16/06 , H01L29/82 , G11C11/14 , G11C11/416 , H01L29/788
CPC分类号： H01L29/7881 , G11C11/14 , G11C16/0408 , H01L21/28273 , H01L29/66825 , H01L29/82
摘要： An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.
摘要翻译：一种装置包括至少一个存储器件，其包括可操作地将磁场施加到存储器件的浮栅元件和磁场发生器。磁场将存储器件中的电子引导到浮动栅极元件中。

5. 发明授权

US07948045B2 Magnet-assisted transistor devices 有权
标题翻译：磁铁辅助晶体管器件
公开(公告)号：US07948045B2
公开(公告)日：2011-05-24
申请号：US12193065
申请日：2008-08-18
申请人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
发明人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
IPC分类号： H01L29/82 , H01L21/00 , H01L21/336
CPC分类号： H01L29/7881 , H01L27/11521 , H01L29/66825
摘要： A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
摘要翻译：晶体管器件包括适于在器件的沟道内的源极区域和漏极区域之间偏转自由电子载流子的磁场源。根据优选的构造，磁场源包括在与晶体管器件的栅极相对的沟道侧延伸的磁性材料层。

6. 发明申请

US20100038735A1 MAGNET-ASSISTED TRANSISTOR DEVICES 有权
标题翻译：磁铁辅助晶体管器件
公开(公告)号：US20100038735A1
公开(公告)日：2010-02-18
申请号：US12193065
申请日：2008-08-18
申请人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
发明人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L29/7881 , H01L27/11521 , H01L29/66825
摘要： A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
摘要翻译：晶体管器件包括适于在器件的沟道内的源极区域和漏极区域之间偏转自由电子载流子的磁场源。根据优选的构造，磁场源包括在与晶体管器件的栅极相对的沟道侧延伸的磁性材料层。

7. 发明授权

US08476721B2 Magnet-assisted transistor devices 失效
标题翻译：磁铁辅助晶体管器件
公开(公告)号：US08476721B2
公开(公告)日：2013-07-02
申请号：US13088832
申请日：2011-04-18
申请人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
发明人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
IPC分类号： H01L29/82 , H01L21/00 , H01L21/326
CPC分类号： H01L29/7881 , H01L27/11521 , H01L29/66825
摘要： A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
摘要翻译：晶体管器件包括适于在器件的沟道内的源极区域和漏极区域之间偏转自由电子载流子的磁场源。根据优选的构造，磁场源包括在与晶体管器件的栅极相对的沟道侧延伸的磁性材料层。

8. 发明申请

US20110193148A1 MAGNET-ASSISTED TRANSISTOR DEVICES 失效
标题翻译：磁铁辅助晶体管器件
公开(公告)号：US20110193148A1
公开(公告)日：2011-08-11
申请号：US13088832
申请日：2011-04-18
申请人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
发明人： Yang Li , Insik Jin , Harry Liu , Song S. Xue , Shuiyuan Huang , Michael X. Tang
IPC分类号： H01L29/82
CPC分类号： H01L29/7881 , H01L27/11521 , H01L29/66825
摘要： A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
摘要翻译：晶体管器件包括适于在器件的沟道内的源极区域和漏极区域之间偏转自由电子载流子的磁场源。根据优选的构造，磁场源包括在与晶体管器件的栅极相对的沟道侧延伸的磁性材料层。

9. 发明申请

US20090315088A1 FERROELECTRIC MEMORY USING MULTIFERROICS 失效
标题翻译：使用多媒体的电磁记忆
公开(公告)号：US20090315088A1
公开(公告)日：2009-12-24
申请号：US12144697
申请日：2008-06-24
申请人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
发明人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
IPC分类号： H01L29/00
CPC分类号： G11C11/22 , H01F10/22 , H01F10/24 , H01L29/78391
摘要： Ferroelectric memory using multiferroics is described. The multiferrroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A data storage cell having a composite multiferroic layer is adjacent to the electrically insulating layer. The electrically insulating layer separated the data storage cell form the channel region. A control gate electrode is adjacent to the data storage cell. The data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer.
摘要翻译：描述了使用多铁性的铁电存储器。多层存储器包括具有源极区，漏极区和分离源极区和漏极区的沟道区的衬底。电绝缘层与源极区，漏极区和沟道区相邻。具有复合多铁层的数据存储单元与电绝缘层相邻。电绝缘层从通道区域分离数据存储单元。控制栅电极与数据存储单元相邻。数据存储单元将控制栅电极的至少一部分与电绝缘层分离。

10. 发明授权

US08223560B2 Magnetic floating gate memory 有权
标题翻译：磁浮栅存储器
公开(公告)号：US08223560B2
公开(公告)日：2012-07-17
申请号：US13096003
申请日：2011-04-28
申请人： Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
发明人： Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
IPC分类号： G11C16/04
CPC分类号： H01L29/7881 , G11C11/14 , G11C16/0408 , H01L21/28273 , H01L29/66825 , H01L29/82
摘要： An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.
摘要翻译：一种装置包括至少一个存储器件，其包括可操作地将磁场施加到存储器件的浮动栅极元件和磁场发生器。磁场将存储器件中的电子引导到浮动栅极元件中。

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