专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100032636A1 NON-VOLATILE MEMORY CELL WITH ENHANCED FILAMENT FORMATION CHARACTERISTICS 有权
标题翻译：非易失性存储器，具有增强的光纤形成特性
公开(公告)号：US20100032636A1
公开(公告)日：2010-02-11
申请号：US12261137
申请日：2008-10-30
申请人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
发明人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1675
摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.
摘要翻译：用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

2. 发明授权

US07795606B2 Non-volatile memory cell with enhanced filament formation characteristics 有权
标题翻译：具有增强的细丝形成特性的非挥发性记忆体
公开(公告)号：US07795606B2
公开(公告)日：2010-09-14
申请号：US12261137
申请日：2008-10-30
申请人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
发明人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
IPC分类号： H01L29/04
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1675
摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.
摘要翻译：用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

3. 发明授权

US07589928B2 Magnetic recording device including a thermal proximity sensor 有权
标题翻译：包括热接近传感器的磁记录装置
公开(公告)号：US07589928B2
公开(公告)日：2009-09-15
申请号：US11724739
申请日：2007-03-16
申请人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
发明人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
IPC分类号： G11B21/02
CPC分类号： G11B5/1278 , G11B5/3133 , G11B5/314 , G11B5/40 , G11B5/6064 , G11B5/607
摘要： A system includes a magnetic device for writing to and reading from a magnetic medium and a sensor disposed adjacent to the magnetic device and proximate to the magnetic medium. The sensor generates signals related to thermal variations in the sensor caused by changes in a distance between the magnetic device and the magnetic medium.
摘要翻译：一种系统包括用于写入和读取磁性介质的磁性装置和邻近磁性装置设置并靠近磁性介质的传感器。该传感器产生与由磁性装置和磁性介质之间的距离变化引起的传感器热变化相关的信号。

4. 发明申请

US20080225426A1 Magnetic recording device including a thermal proximity sensor 有权
标题翻译：包括热接近传感器的磁记录装置
公开(公告)号：US20080225426A1
公开(公告)日：2008-09-18
申请号：US11724739
申请日：2007-03-16
申请人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
发明人： Mallika Roy , Kaizhong Gao , Insik Jin , William Bruce Fitzpatrick , Housan S. Dakroub , Sining Mao , Song S. Xue , Jeffrey Howard Lake , Dadi Setiadi
IPC分类号： G11B27/36 , G11B21/04
CPC分类号： G11B5/1278 , G11B5/3133 , G11B5/314 , G11B5/40 , G11B5/6064 , G11B5/607
摘要： A system includes a magnetic device for writing to and reading from a magnetic medium and a sensor disposed adjacent to the magnetic device and proximate to the magnetic medium. The sensor generates signals related to thermal variations in the sensor caused by changes in a distance between the magnetic device and the magnetic medium.
摘要翻译：一种系统包括用于写入和读取磁性介质的磁性装置和邻近磁性装置设置并靠近磁性介质的传感器。该传感器产生与由磁性装置和磁性介质之间的距离变化引起的传感器热变化相关的信号。

5. 发明申请

US20090303076A1 WIRELESS AND BATTERY-LESS MONITORING UNIT 审中-公开
标题翻译：无线和无电池监控单元
公开(公告)号：US20090303076A1
公开(公告)日：2009-12-10
申请号：US12132673
申请日：2008-06-04
申请人： Dadi Setiadi , Song S. Xue , Insik Jin
发明人： Dadi Setiadi , Song S. Xue , Insik Jin
IPC分类号： G08C19/16
CPC分类号： H04Q9/00 , H04Q2209/47 , H04Q2209/75 , H04Q2209/886
摘要： A wireless and battery-less sensor device is described. The sensor device includes a mechanical energy harvesting device, a sensor electrically coupled to the mechanical energy harvesting module. The sensor is configured to sense with the power supplied by the mechanical energy harvesting device. Nonvolatile memory is configured to store output from the sensor. A radio frequency energy harvesting module is electrically coupled to a radio frequency transmitter. The radio frequency transmitter is configured to transmit the output from the sensor with the power supplied by the radio frequency energy harvesting device. Systems and methods utilizing the wireless and battery-less sensor device are also described.
摘要翻译：描述了无线和无电池的传感器装置。传感器装置包括机械能量收集装置，电耦合到机械能量收集模块的传感器。传感器被配置为用机械能量收集装置提供的功率感测。非易失性存储器被配置为存储来自传感器的输出。射频能量采集模块电耦合到射频发射机。射频发射器被配置为利用由射频能量收集装置提供的电力来传输来自传感器的输出。还描述了利用无线和无电池传感器装置的系统和方法。

6. 发明申请

US20090289736A1 MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION 审中-公开
标题翻译：用于旋转传动的磁力开关
公开(公告)号：US20090289736A1
公开(公告)日：2009-11-26
申请号：US12125974
申请日：2008-05-23
申请人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
发明人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
IPC分类号： H01P1/10 , H01H53/00
CPC分类号： H01H59/0009 , H01H57/00
摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
摘要翻译：旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。该连接允许将旋转波从第一磁条传输到第二磁条。第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

7. 发明申请

US20120149183A1 SCHOTTKY DIODE SWITCH AND MEMORY UNITS CONTAINING THE SAME 有权
标题翻译：肖特基二极管开关和包含该开关的记忆单元
公开(公告)号：US20120149183A1
公开(公告)日：2012-06-14
申请号：US13400364
申请日：2012-02-20
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L21/329
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
摘要翻译：一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属接触形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触，第二结和第三结是欧姆接触。

8. 发明申请

US20100124352A1 MICRO MAGNETIC DEVICE WITH MAGNETIC SPRING 审中-公开
标题翻译：具有磁性弹簧的微型磁性装置
公开(公告)号：US20100124352A1
公开(公告)日：2010-05-20
申请号：US12270966
申请日：2008-11-14
申请人： Insik Jin , Dadi Setiadi , Yong Lu , Jun Zheng
发明人： Insik Jin , Dadi Setiadi , Yong Lu , Jun Zheng
IPC分类号： H04R1/00
CPC分类号： H04R13/00 , H04R2201/003
摘要： A micro magnetic device having a body defining at least part of an enclosed chamber, the body comprising a first sidewall and a second sidewall. A pole comprising a soft magnetic material is within the chamber and an electrically conductive coil is positioned around the pole. A diaphragm is connected to the first sidewall and a permanent dipole magnet is connected to the second sidewall at a first end and to the diaphragm at a second end. The dipole magnet is offset centrally from the pole. The diaphragm may also be offset centrally from the first pole. The micro magnetic device may be made by MEMS or thin film techniques.
摘要翻译：一种具有限定至少一部分封闭室的主体的微型磁性装置，该主体包括第一侧壁和第二侧壁。包括软磁性材料的极点在腔室内，并且导电线圈围绕极点定位。隔膜连接到第一侧壁，并且永久偶极子磁体在第一端处连接到第二侧壁并在第二端连接到隔膜。偶极子磁体从极点中心偏移。隔膜也可以从第一极中心偏移。微型磁性器件可以由MEMS或薄膜技术制成。

9. 发明授权

US08158964B2 Schottky diode switch and memory units containing the same 有权
公开(公告)号：US08158964B2
公开(公告)日：2012-04-17
申请号：US12502221
申请日：2009-07-13
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L29/02 , H01L29/47
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.

10. 发明申请

US20110006276A1 SCHOTTKY DIODE SWITCH AND MEMORY UNITS CONTAINING THE SAME 有权
标题翻译：肖特基二极管开关和包含该开关的记忆单元
公开(公告)号：US20110006276A1
公开(公告)日：2011-01-13
申请号：US12502221
申请日：2009-07-13
申请人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
发明人： Young Pil Kim , Nurul Amin , Dadi Setiadi , Venugopalan Vaithyanathan , Wei Tian , Insik Jin
IPC分类号： H01L45/00 , H01L29/868 , H01L21/30
CPC分类号： H01L27/0814 , G11C11/161 , G11C11/1659 , G11C13/0002 , H01L21/84 , H01L27/0688 , H01L27/101 , H01L27/1021 , H01L27/11507 , H01L27/1203 , H01L27/224 , H01L27/2409 , H01L29/66143 , H01L29/66212 , H01L29/872 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147
摘要： A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.
摘要翻译：一种开关元件，包括第一半导体层，所述第一半导体层具有第一部分和第二部分; 第二半导体层，所述第二半导体层具有第一部分和第二部分; 设置在所述第一半导体层和所述第二半导体层之间的绝缘层; 与所述第一半导体层的所述第一部分接触的第一金属触点，形成第一结，并与所述第二半导体层的所述第一部分接触形成第二结; 第二金属触点与第一半导体层的第二部分接触形成第三结，并与第二半导体层的第二部分接触形成第四结，其中第一结和第四结是肖特基接触，第二结和第三结是欧姆接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式