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1. 发明申请

US20090289736A1 MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION 审中-公开
标题翻译：用于旋转传动的磁力开关
公开(公告)号：US20090289736A1
公开(公告)日：2009-11-26
申请号：US12125974
申请日：2008-05-23
申请人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
发明人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
IPC分类号： H01P1/10 , H01H53/00
CPC分类号： H01H59/0009 , H01H57/00
摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
摘要翻译：旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。该连接允许将旋转波从第一磁条传输到第二磁条。第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

2. 发明申请

US20100104115A1 MICRO MAGNETIC SPEAKER DEVICE WITH BALANCED MEMBRANE 审中-公开
标题翻译：具有平衡膜的微型磁性扬声器装置
公开(公告)号：US20100104115A1
公开(公告)日：2010-04-29
申请号：US12361905
申请日：2009-01-29
申请人： Jun Zheng , Dadi Setiadi , Haiwen Xi , Insik Jin , Nurul Amin
发明人： Jun Zheng , Dadi Setiadi , Haiwen Xi , Insik Jin , Nurul Amin
IPC分类号： H04R25/00 , H04R1/00
CPC分类号： H04R1/00
摘要： A micro magnetic device with a micro magnetic speaker unit having a first element, a second element, and a membrane therebetween. Each of the elements comprises a body, a pole of soft magnetic material, an electrically conductive coil positioned around the pole, and a permanent magnet connected to the membrane. The first element and the second element are magnetically identical. A plurality of speaker units can be combined to provide a speaker array.
摘要翻译：具有微型磁性扬声器单元的微型磁性装置具有第一元件，第二元件和它们之间的隔膜。每个元件包括主体，软磁材料的极，围绕极的定位的导电线圈和连接到膜的永磁体。第一元件和第二元件是磁性相同的。可以组合多个扬声器单元以提供扬声器阵列。

3. 发明授权

US07795606B2 Non-volatile memory cell with enhanced filament formation characteristics 有权
标题翻译：具有增强的细丝形成特性的非挥发性记忆体
公开(公告)号：US07795606B2
公开(公告)日：2010-09-14
申请号：US12261137
申请日：2008-10-30
申请人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
发明人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
IPC分类号： H01L29/04
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1675
摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.
摘要翻译：用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

4. 发明申请

US20100032636A1 NON-VOLATILE MEMORY CELL WITH ENHANCED FILAMENT FORMATION CHARACTERISTICS 有权
标题翻译：非易失性存储器，具有增强的光纤形成特性
公开(公告)号：US20100032636A1
公开(公告)日：2010-02-11
申请号：US12261137
申请日：2008-10-30
申请人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
发明人： Insik Jin , Yang Li , Dadi Setiadi , Song S. Xue
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1226 , H01L45/085 , H01L45/1233 , H01L45/1273 , H01L45/146 , H01L45/1675
摘要： Method and apparatus for constructing a non-volatile memory cell, such as a modified RRAM cell. In some embodiments, a memory cell comprises a resistive storage layer disposed between a first electrode layer and a second electrode layer. Further in some embodiments, the storage layer has a localized region of decreased thickness to facilitate formation of a conductive filament through the storage layer from the first electrode to the second electrode.
摘要翻译：用于构造诸如修改的RRAM单元的非易失性存储单元的方法和装置。在一些实施例中，存储单元包括设置在第一电极层和第二电极层之间的电阻存储层。此外，在一些实施例中，存储层具有减小厚度的局部区域，以便于通过存储层从第一电极到第二电极的形成导电细丝。

5. 发明授权

US07791925B2 Structures for resistive random access memory cells 有权
标题翻译：电阻随机存取存储单元的结构
公开(公告)号：US07791925B2
公开(公告)日：2010-09-07
申请号：US12262262
申请日：2008-10-31
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C7/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

6. 发明申请

US20100135061A1 Non-Volatile Memory Cell with Ferroelectric Layer Configurations 审中-公开
标题翻译：具有铁电层配置的非易失性存储单元
公开(公告)号：US20100135061A1
公开(公告)日：2010-06-03
申请号：US12326714
申请日：2008-12-02
申请人： Shaoping Li , Kaizhong Gao , Insik Jin , Song Xue , Haiwen Xi , Zheng Gao , Eileen Yan
发明人： Shaoping Li , Kaizhong Gao , Insik Jin , Song Xue , Haiwen Xi , Zheng Gao , Eileen Yan
IPC分类号： G11C11/22 , H01L29/68
CPC分类号： G11C11/22 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.
摘要翻译：在本发明的一些实施例中，非易失性存储单元在第一和第二电极之间设置有第一电极，第二电极以及铁电金属氧化物和铁电材料层的一个或多个侧层。铁电材料层可以设置在例如铁电金属氧化物的相邻的两个侧层之间或者设置在单层铁电金属氧化物和电极之间。在一些情况下，铁电金属氧化物可以包括均匀的层状结构，例如诸如Bi 4 Ti 3 O 12的铋层结构的铁电材料。在一些实施例中，铁电材料层至少部分地由PbZrxTi1-xO3形成。还提供了包括这种存储单元的非易失性存储器阵列。

7. 发明授权

US08000128B2 Structures for resistive random access memory cells 有权
标题翻译：电阻随机存取存储单元的结构
公开(公告)号：US08000128B2
公开(公告)日：2011-08-16
申请号：US12835791
申请日：2010-07-14
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

8. 发明申请

US20100277969A1 STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS 有权
标题翻译：电阻随机存取细胞的结构
公开(公告)号：US20100277969A1
公开(公告)日：2010-11-04
申请号：US12835791
申请日：2010-07-14
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

9. 发明申请

US20090315088A1 FERROELECTRIC MEMORY USING MULTIFERROICS 失效
标题翻译：使用多媒体的电磁记忆
公开(公告)号：US20090315088A1
公开(公告)日：2009-12-24
申请号：US12144697
申请日：2008-06-24
申请人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
发明人： Haiwen Xi , Wei Tian , Yang Li , Insik Jin , Song S. Xue
IPC分类号： H01L29/00
CPC分类号： G11C11/22 , H01F10/22 , H01F10/24 , H01L29/78391
摘要： Ferroelectric memory using multiferroics is described. The multiferrroic memory includes a substrate having a source region, a drain region and a channel region separating the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A data storage cell having a composite multiferroic layer is adjacent to the electrically insulating layer. The electrically insulating layer separated the data storage cell form the channel region. A control gate electrode is adjacent to the data storage cell. The data storage cell separates at least a portion of the control gate electrode from the electrically insulating layer.
摘要翻译：描述了使用多铁性的铁电存储器。多层存储器包括具有源极区，漏极区和分离源极区和漏极区的沟道区的衬底。电绝缘层与源极区，漏极区和沟道区相邻。具有复合多铁层的数据存储单元与电绝缘层相邻。电绝缘层从通道区域分离数据存储单元。控制栅电极与数据存储单元相邻。数据存储单元将控制栅电极的至少一部分与电绝缘层分离。

10. 发明申请

US20090184930A1 POSITION DETECTING DISPLAY PANEL 审中-公开
标题翻译：位置检测显示面板
公开(公告)号：US20090184930A1
公开(公告)日：2009-07-23
申请号：US12015966
申请日：2008-01-17
申请人： Yang Li , Haiwen Xi , Insik Jin , Song S. Xue
发明人： Yang Li , Haiwen Xi , Insik Jin , Song S. Xue
IPC分类号： G06F3/046
CPC分类号： G06F3/0412 , G06F3/046
摘要： An array of sensors, which is coupled to an array of pixel elements in a position detecting display panel, includes sensors that are each registered with a corresponding pixel element of the array of pixel elements, and that each include a material exhibiting magneto-electric behavior in response to a magnetic field source. Some systems may include the position detecting display panel and at least one separate stylus, which includes the magnetic field source. A voltage source, that is operably coupled to each sensor and each pixel element, applies a voltage across one or more particular pixel elements, according to the magneto-electric behavior of the corresponding sensor(s), when the magnetic field source is brought into proximity the corresponding sensor(s).
摘要翻译：耦合到位置检测显示面板中的像素元件阵列的传感器阵列包括各自记录有像素元件阵列的对应像素元件的传感器，并且每个传感器包括表现出磁电行为的材料响应于磁场源。一些系统可以包括位置检测显示面板和包括磁场源的至少一个单独的触控笔。可操作地耦合到每个传感器和每个像素元件的电压源根据相应传感器的磁电行为在一个或多个特定像素元件上施加电压，当磁场源进入靠近相应的传感器。

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