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1. 发明申请

US20060207087A1 Method of manufacturing vibrating micromechanical structures 失效
公开(公告)号：US20060207087A1
公开(公告)日：2006-09-21
申请号：US11084978
申请日：2005-03-21
申请人： Ijaz Jafri , Jonathan Klein , Galen Magendanz
发明人： Ijaz Jafri , Jonathan Klein , Galen Magendanz
IPC分类号： H05K3/20 , H05K3/02
CPC分类号： B81C1/00142 , B81B2201/0271 , B81C2201/019 , B81C2203/036 , B81C2203/051 , H03H3/0072 , H03H9/2447 , H03H9/462 , Y10T29/49005 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156 , Y10T29/49826 , Y10T29/49861
摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

2. 发明申请

US20060211169A1 Vacuum packaged single crystal silicon device 失效
标题翻译：真空封装单晶硅器件
公开(公告)号：US20060211169A1
公开(公告)日：2006-09-21
申请号：US11322842
申请日：2005-12-30
申请人： Ijaz Jafri , Galen Magendanz
发明人： Ijaz Jafri , Galen Magendanz
IPC分类号： H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0271 , B81C1/00142 , B81C2201/019 , B81C2203/036 , B81C2203/051 , H03H3/0072 , H03H9/1057 , H03H9/2405 , H03H9/2447 , H03H9/462 , H03H2009/02511
摘要： A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.
摘要翻译：一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

3. 发明授权

US06602349B2 Supercritical fluid cleaning process for precision surfaces 失效
公开(公告)号：US06602349B2
公开(公告)日：2003-08-05
申请号：US09861298
申请日：2001-05-18
申请人： Mohan Chandra , David J. Mount , Michael A. Costantini , Heiko D. Moritz , Ijaz Jafri , Jim Boyd , Rick M. Heathwaite
发明人： Mohan Chandra , David J. Mount , Michael A. Costantini , Heiko D. Moritz , Ijaz Jafri , Jim Boyd , Rick M. Heathwaite
IPC分类号： B08B700
CPC分类号： H01L21/67126 , B01J3/008 , B01J3/06 , B08B7/0021 , H01L21/67034 , Y02P20/544 , Y10S134/902
摘要： A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

4. 发明授权

US07830003B2 Mechanical isolation for MEMS devices 有权
标题翻译： MEMS器件的机械隔离
公开(公告)号：US07830003B2
公开(公告)日：2010-11-09
申请号：US11965623
申请日：2007-12-27
申请人： Michael Foster , Ijaz Jafri , Mark Eskridge , Shifang Zhou
发明人： Michael Foster , Ijaz Jafri , Mark Eskridge , Shifang Zhou
IPC分类号： H01L23/34
CPC分类号： B81B7/0048 , B81B2207/012 , H01L2924/0002 , H01L2924/00
摘要： A device according to the present invention includes a MEMS device supported on a first side of a die. A first side of an isolator is attached to the first side of the die. A package is attached to the first side of the isolator, with at least one electrically conductive attachment device attaching the die to the isolator and attaching the isolator to the package. The isolator may include isolation structures and a receptacle.
摘要翻译：根据本发明的装置包括支撑在模具的第一侧上的MEMS装置。隔离器的第一侧附接到模具的第一侧。一个封装连接到隔离器的第一侧，至少有一个导电连接装置将管芯连接到隔离器并将隔离器连接到封装上。隔离器可以包括隔离结构和容器。

5. 发明申请

US20090166827A1 MECHANICAL ISOLATION FOR MEMS DEVICES 有权
标题翻译： MEMS器件的机械隔离
公开(公告)号：US20090166827A1
公开(公告)日：2009-07-02
申请号：US11965623
申请日：2007-12-27
申请人： Michael Foster , Ijaz Jafri , Mark Eskridge , Shifang Zhou
发明人： Michael Foster , Ijaz Jafri , Mark Eskridge , Shifang Zhou
IPC分类号： H01L23/495 , H01L21/52
CPC分类号： B81B7/0048 , B81B2207/012 , H01L2924/0002 , H01L2924/00
摘要： A device according to the present invention includes a MEMS device supported on a first side of a die. A first side of an isolator is attached to the first side of the die. A package is attached to the first side of the isolator, with at least one electrically conductive attachment device attaching the die to the isolator and attaching the isolator to the package. The isolator may include isolation structures and a receptacle.
摘要翻译：根据本发明的装置包括支撑在模具的第一侧上的MEMS装置。隔离器的第一侧附接到模具的第一侧。一个封装连接到隔离器的第一侧，至少有一个导电连接装置将管芯连接到隔离器并将隔离器连接到封装上。隔离器可以包括隔离结构和容器。

6. 发明授权

US06334266B1 Supercritical fluid drying system and method of use 失效
标题翻译：超临界流体干燥系统
公开(公告)号：US06334266B1
公开(公告)日：2002-01-01
申请号：US09665932
申请日：2000-09-20
申请人： Heiko D Moritz , Jonathan A. Talbott , Mohan Chandra , James A. Tseronis , Ijaz Jafri
发明人： Heiko D Moritz , Jonathan A. Talbott , Mohan Chandra , James A. Tseronis , Ijaz Jafri
IPC分类号： F26B300
CPC分类号： B01J3/008 , B01J3/06 , F26B21/14 , H01L21/67034 , H01L21/67126 , H01L21/67757 , Y10S134/902
摘要： A method and apparatus for fabricating and drying wafers, including micro-electro-mechanical system (MEMS) structures, in a second, supercritical processing fluid environment. The apparatus utilizes an inverted pressure vessel connected to a supercritical processing fluid supply and recover system, with an internal heat exchanger connected to external heating and cooling sources, which is closed with a vertically movable base plate. A wafer cassette configured for supporting multiple wafers is submerged in a first processing fluid within a container, which is installed on the base plate for insertion into the pressure vessel. Vessel inlet and outlet tubes extend vertically downward from the ceiling of the pressure vessel to nearly the base plate. Container inlet and outlet tubes extend vertically downward from the ceiling of the pressure vessel to inside the container and nearly to the bottom of the container. The tubes provide for displacement of the first processing fluid with the second processing fluid still in a liquid state, from which it is raised to supercritical state.
摘要翻译：一种用于在第二超临界处理流体环境中制造和干燥晶片的方法和装置，包括微电子机械系统（MEMS）结构。该设备利用与超临界加工流体供应和回收系统连接的倒置压力容器，内部热交换器连接到外部加热和冷却源，该外部加热和冷却源用可垂直移动的基板封闭。构造成用于支撑多个晶片的晶片盒被浸没在容器内的第一处理流体中，该容器安装在基板上用于插入压力容器中。容器入口和出口管从压力容器的天花板垂直向下延伸到几乎基板。容器入口和出口管从压力容器的天花板垂直向下延伸到容器内部并且几乎到容器的底部。这些管提供第一处理流体与第二处理流体的位移，该第二处理流体仍处于液态，从而将其升高到超临界状态。

7. 发明申请

US20060057959A1 Radio having a MEMS preselect filter 失效
标题翻译：具有MEMS预选滤波器的无线电
公开(公告)号：US20060057959A1
公开(公告)日：2006-03-16
申请号：US10938482
申请日：2004-09-10
申请人： David Vacanti , Ijaz Jafri , Keith Bayern
发明人： David Vacanti , Ijaz Jafri , Keith Bayern
IPC分类号： H03H7/00
CPC分类号： H03H9/462
摘要： The present invention provides systems and methods for pre-filter in a VHF receiver using Micro-Electro-Mechanical Systems (MEMS) filters. The system includes an antenna, and first and second Micro-Electro-Mechanical Systems (MEMS) filters. The first MEMS filter filters a signal received by the antenna based on a first pre-defined bandwidth, and the second MEMS filter filters the signal filtered by the first MEMS filter based on a second bandwidth. The system also includes an analog to digital converter that converts the signal filtered by the second MEMS filter into a digital signal, a down converter that down converts the digital signal produced by the A to D converter, and a digital signal processor that processes the down converted digital signal produced by the down converter. The first and second MEMS filters or the down converter are adjustable based on a received tuning signal.
摘要翻译：本发明提供了使用微机电系统（MEMS）滤波器在VHF接收机中进行预滤波的系统和方法。该系统包括天线以及第一和第二微机电系统（MEMS）滤波器。第一MEMS滤波器基于第一预定义带宽对由天线接收的信号进行滤波，并且第二MEMS滤波器基于第二带宽对由第一MEMS滤波器滤波的信号进行滤波。该系统还包括将由第二MEMS滤波器滤波的信号转换为数字信号的模数转换器，将由A转D转换器产生的数字信号下变频的下变频器以及处理下降的数字信号处理器由转换器产生的转换数字信号。第一和第二MEMS滤波器或降压转换器可基于接收到的调谐信号来调节。

8. 发明授权

US06365225B1 Cold wall reactor and method for chemical vapor deposition of bulk polysilicon 失效
标题翻译：冷壁反应堆和大量多晶硅的化学气相沉积方法
公开(公告)号：US06365225B1
公开(公告)日：2002-04-02
申请号：US09642735
申请日：2000-08-17
申请人： Mohan Chandra , Kedar P. Gupta , Jonathan A. Talbott , Ijaz Jafri , Vishwanath Prasad
发明人： Mohan Chandra , Kedar P. Gupta , Jonathan A. Talbott , Ijaz Jafri , Vishwanath Prasad
IPC分类号： B05D722
CPC分类号： C01B33/027 , C23C16/045 , C23C16/24
摘要： A method and apparatus, and product by process, for the production of bulk polysilicon by a chemical vapor deposition process on a removable tube section. A quartz envelope and base plate form a CVD reactor enclosure, with external radiant heaters providing process heat through the wall of the reactor, and with process gas inlet and outlet ports located in the base plate. A tube section, preferably an EFG silicon tube-section, vertically emplaced on the base plate and capped to close the top is used as the reaction chamber. During the CVD process, deposition occurs on the inside surface of the chamber tube, the inner diameter of the deposit layer becoming increasingly smaller as the yield accumulates. In a two tube reactor, a smaller diameter, vertical middle tube is uniformly spaced and supported inside the chamber tube for fall flow of process gas over and under the middle tube so that deposition occurs on the three exposed tube surfaces. A co-axial core tube and heater mounted on the base plate provides yet more deposition surface area, improved thermal gradient in the reaction chamber, and greater thermal efficiency to the process. The full, double sided deposit on the middle tube and exterior deposit on the core tube are unique products of the process.
摘要翻译：一种用于通过化学气相沉积工艺在可移除管部分上生产大块多晶硅的方法和装置以及产品。石英壳和基板形成CVD反应器外壳，外部辐射加热器通过反应器的壁提供工艺热，并且具有位于基板中的工艺气体入口和出口。垂直放置在基板上并封盖以封闭顶部的管段，优选EFG硅管段用作反应室。在CVD工艺期间，在室管的内表面上发生沉积，沉积层的内径随着屈服积累而变得越来越小。在双管反应器中，较小直径的垂直中间管被均匀地间隔开并且被支撑在腔室管内，用于使处理气体在中间管和下管下方流动，使得在三个暴露的管表面上发生沉积。安装在基板上的同轴芯管和加热器提供更多的沉积表面积，改善反应室中的热梯度，并提供更高的热效率。中管的全双面沉积物和芯管上的外部沉积物是该工艺的独特产物。

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