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1. 外观设计

USD680065S1 Control box for charger 有权
标题翻译：充电器控制箱
公开(公告)号：USD680065S1
公开(公告)日：2013-04-16
申请号：US29405556
申请日：2011-11-03
申请人： Ichiro Shibamura , Tatsuya Mukai , Noboru Inagaki , Naoki Fukuo , Takao Akioka , Hironobu Oe , Shinichi Nakamura , Yoji Minami , Hironobu Kusafuka , Masaru Sasaki
设计人： Ichiro Shibamura , Tatsuya Mukai , Noboru Inagaki , Naoki Fukuo , Takao Akioka , Hironobu Oe , Shinichi Nakamura , Yoji Minami , Hironobu Kusafuka , Masaru Sasaki

2. 发明授权

US09324572B2 Plasma etching method, method for producing semiconductor device, and plasma etching device 有权
标题翻译：等离子体蚀刻方法，半导体装置的制造方法以及等离子体蚀刻装置
公开(公告)号：US09324572B2
公开(公告)日：2016-04-26
申请号：US13582523
申请日：2011-03-03
申请人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
发明人： Masaru Sasaki , Kazuki Moyama , Masaki Inoue , Yoko Noto
IPC分类号： H01L21/461 , H01L21/311 , H01J37/32 , H01L29/66 , H01L29/78
CPC分类号： H01L21/31116 , H01J37/32192 , H01J37/32238 , H01L29/6653 , H01L29/6659 , H01L29/66795 , H01L29/7833
摘要： Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.
摘要翻译：提供了提高氮化硅膜相对于用作基底的氧化硅膜或硅的选择性的等离子体蚀刻方法。在等离子体蚀刻方法中，通过在将处理气体供应到处理容器中的同时排出处理气体而将处理容器中的压力设定为预定水平，通过向处理容器供给外部能量来产生等离子体，并且设定施加到保持将处理容器中的基板保持为预定值，以相对于硅和/或氧化硅膜选择性地蚀刻氮化硅膜，处理气体包括等离子体激发气体，CH x F y气体和至少一种选择的氧化气体来自由O 2，CO 2，CO组成的组和氧化气体相对于CH x F y气体的流量设定为4/9以上。

3. 发明授权

US09285435B2 Two-core optical fiber magnetic field sensor 有权
标题翻译：双芯光纤磁场传感器
公开(公告)号：US09285435B2
公开(公告)日：2016-03-15
申请号：US13805031
申请日：2011-06-23
申请人： Yoshihiro Konno , Masaru Sasaki
发明人： Yoshihiro Konno , Masaru Sasaki
IPC分类号： G01R33/02 , G01R33/032
CPC分类号： G01R33/032
摘要： A two-core optical fiber magnetic field sensor is configured from at least a light incidence/emission unit; a lens; a magnetic garnet; and a reflector, wherein the lens and the magnetic garnet are disposed between the light incidence/emission end of the light incidence/emission unit and the reflector; a light beam is emitted from one optical fiber; the light beam is reflected by the reflector after being transmitted through the lens and the magnetic garnet; the light beam is transmitted again through the magnetic garnet and the lens after the reflection; and incident on the other optical fiber, the light beam is emitted again from the other optical fiber, and reflected by the reflector after being transmitted through the lens and the magnetic garnet; and the light beam is transmitted again through the magnetic garnet and the lens after the reflection and incident again on the one optical fiber.
摘要翻译：两芯光纤磁场传感器由至少一个入射/发射单元构成; 镜头磁石榴石以及反射器，其中所述透镜和所述磁性石榴石设置在所述光入射/发射单元的光入射/发射端与所述反射器之间; 从一根光纤射出光束; 光束在透射透镜和磁性石榴石后被反射器反射; 反射后光束再次通过磁石榴石和透镜传播; 入射到另一根光纤上时，光束再次从另一根光纤发射，并被反射器透射后通过透镜和磁性石榴石反射; 并且在反射之后光束再次通过磁性石榴石和透镜再次传输到一根光纤上。

4. 发明授权

US09277637B2 Apparatus for plasma treatment and method for plasma treatment 有权
标题翻译：等离子体处理装置及等离子体处理方法
公开(公告)号：US09277637B2
公开(公告)日：2016-03-01
申请号：US13885708
申请日：2011-11-16
申请人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
发明人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
IPC分类号： H01L21/306 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3244
摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.
摘要翻译：一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

5. 发明授权

US09218983B2 Etching method and device 有权
标题翻译：蚀刻方法和装置
公开(公告)号：US09218983B2
公开(公告)日：2015-12-22
申请号：US14131713
申请日：2012-07-12
申请人： Takashi Dokan , Masaru Sasaki , Hikaru Kamata
发明人： Takashi Dokan , Masaru Sasaki , Hikaru Kamata
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/67 , H01L21/033
CPC分类号： H01L21/3065 , H01J2237/334 , H01L21/0206 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/67069
摘要： The etching method of the present invention comprises first and second etching steps (S1, S3) having different types of films to be etched and different types of process gases. During a transition from the first etching step (S1) to the second etching step (S3), a first switching process step (S2) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the first etching step. During a transition from the second etching step (S3) to the first etching step (S1), a second switching process step (S4) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the second etching step.
摘要翻译：本发明的蚀刻方法包括具有不同类型的被蚀刻膜和不同类型的工艺气体的第一和第二蚀刻步骤（S1，S3）。在从第一蚀刻步骤（S1）到第二蚀刻步骤（S3）的转变期间，执行第一切换处理步骤（S2），其中处理容器填充有清洁气体，并且清洁气体变成等离子体以在第一蚀刻步骤中除去沉积在处理容器中的反应产物。在从第二蚀刻步骤（S3）到第一蚀刻步骤（S1）的转变期间，执行第二切换处理步骤（S4），其中处理容器填充有清洁气体，并且清洁气体变成等离子体以在第二蚀刻步骤中除去沉积在处理容器中的反应产物。

6. 发明授权

US08957667B2 Electric current measuring apparatus 有权
标题翻译：电流测量仪
公开(公告)号：US08957667B2
公开(公告)日：2015-02-17
申请号：US13321396
申请日：2010-05-18
申请人： Yoshihiro Konno , Masaru Sasaki
发明人： Yoshihiro Konno , Masaru Sasaki
IPC分类号： G01R19/00 , G01R15/24 , G01R19/32
CPC分类号： G01R15/246 , G01R15/245 , G01R19/32
摘要： An electric measuring apparatus is constructed in such a way as to include a signal processing circuit equipped with at least a polarized light separating unit, Faraday rotators, a light source, a photoelectric conversion element, and optical fibers for a sensor. The optical fibers for the sensor are placed around the periphery of an electrical conductor through which electric current to be measured flows. Furthermore, the rotation angle of each Faraday rotator at the time when the magnetism of each Faraday rotator is saturated is set to 22.5°+α° at a temperature of 23° C., thereby changing the rotation angle of each Faraday rotator by α° from 22.5°.
摘要翻译：电测量装置的构成包括：至少配备有偏振光分离单元，法拉第旋转器，光源，光电转换元件和用于传感器的光纤的信号处理电路。用于传感器的光纤被放置在要测量的电流流过的电导体的周围。此外，每个法拉第旋转器的磁性饱和时的每个法拉第旋转器的旋转角度在23℃的温度下设定为22.5°+α°，从而将每个法拉第旋转器的旋转角度改变α° 从22.5°。

7. 发明授权

US08827731B2 Inlet assembly 有权
标题翻译：入口组装
公开(公告)号：US08827731B2
公开(公告)日：2014-09-09
申请号：US13580511
申请日：2011-02-22
申请人： Masaru Sasaki , Daisuke Sugiyama , Hirotaka Fukushima , Shigeo Mori , Kenya Takahashi
发明人： Masaru Sasaki , Daisuke Sugiyama , Hirotaka Fukushima , Shigeo Mori , Kenya Takahashi
IPC分类号： H01R12/00
CPC分类号： H01R13/46 , B60L11/1818 , B60L11/1825 , B60L2230/12 , H01R13/5205 , H01R13/5227 , H01R13/6456 , H01R2201/26 , Y02T10/7005 , Y02T10/7088 , Y02T90/121 , Y02T90/128 , Y02T90/14
摘要： A drainage inducing member that promotes drainage is arranged on an edge portion on the back side of a drain hole provided in an inlet base of an inlet assembly, in order to better promote the drainage of water that has reached the drain hole to the outside.
摘要翻译：为了更好地促进已到达排水孔的水向外部排出，排水引导构件设置在设置在入口组件的入口底座的排水孔的后侧的边缘部分上。

8. 发明申请

US20130078846A1 INLET ASSEMBLY 有权
标题翻译：入口总成
公开(公告)号：US20130078846A1
公开(公告)日：2013-03-28
申请号：US13580511
申请日：2011-02-22
申请人： Masaru Sasaki , Daisuke Sugiyama , Hirotaka Fukushima , Shigeo Mori , Kenya Takahashi
发明人： Masaru Sasaki , Daisuke Sugiyama , Hirotaka Fukushima , Shigeo Mori , Kenya Takahashi
IPC分类号： H01R13/46
CPC分类号： H01R13/46 , B60L11/1818 , B60L11/1825 , B60L2230/12 , H01R13/5205 , H01R13/5227 , H01R13/6456 , H01R2201/26 , Y02T10/7005 , Y02T10/7088 , Y02T90/121 , Y02T90/128 , Y02T90/14
摘要： A drainage inducing member that promotes drainage is arranged on an edge portion on the back side of a drain hole provided in an inlet base of an inlet assembly, in order to better promote the drainage of water that has reached the drain hole to the outside.
摘要翻译：为了更好地促进已到达排水孔的水向外部排出，排水引导构件设置在设置在入口组件的入口底座的排水孔的后侧的边缘部分上。

9. 发明申请

US20130069628A1 OPTICAL FIBRE BIREFRINGENCE COMPENSATION MIRROR AND CURRENT SENSOR 有权
标题翻译：光纤激光补偿镜和电流传感器
公开(公告)号：US20130069628A1
公开(公告)日：2013-03-21
申请号：US13699772
申请日：2011-05-25
申请人： Yoshihiro Konno , Masaru Sasaki
发明人： Yoshihiro Konno , Masaru Sasaki
IPC分类号： G01R19/00 , G02B6/27
CPC分类号： G01R19/00 , G01R15/246 , G02B6/274 , G02B27/283 , G02B27/288
摘要： Disclosed is an optical fibre birefringence compensation mirror. Also disclosed is a current sensor wherein vibration resistance has been increased due to the optical connection of the optical fibre birefringence compensation mirror. The optical fibre birefringence compensation mirror includes: an optical fibre, a birefringence element, a lens, a magnet, a Faraday rotator, and a mirror. From the light incidence/emission end surface of the optical fibre, the birefringence element, Faraday rotator, and mirror are arranged in said order. Light comes in from the optical fibre, and is separated into two linearly polarised lights by the birefringence element. The polarisation planes of the two linearly polarised lights are rotated by the Faraday rotator, and the two linearly polarised lights are point-symmetrically reflected at one point by the mirror, then again rotated by the Faraday rotator, then re-combined into one light by the birefringence element and made to enter the optical fibre.
摘要翻译：公开了一种光纤双折射补偿镜。还公开了一种电流传感器，其中由于光纤双折射补偿反射镜的光学连接而使振动阻力增加。光纤双折射补偿镜包括：光纤，双折射元件，透镜，磁体，法拉第旋转器和反射镜。从光纤的光入射/发射端面，双折射元件，法拉第旋转器和反射镜按照顺序排列。光从光纤入射，并通过双折射元件分离为两个线偏振光。两个直线偏振光的偏振面由法拉第旋转器旋转，两个直线偏振光在一个点上被镜子点对称地反射，然后由法拉第旋转器再次旋转，然后通过双折射元件并使其进入光纤。

10. 发明授权

US08380380B2 Electric power reception apparatus and electrical powered vehicle 有权
标题翻译：电力接收装置和电动车辆
公开(公告)号：US08380380B2
公开(公告)日：2013-02-19
申请号：US13109691
申请日：2011-05-17
申请人： Masaru Sasaki
发明人： Masaru Sasaki
IPC分类号： B60L15/12
CPC分类号： B60W20/13 , B60K1/02 , B60K6/365 , B60K6/445 , B60L11/182 , B60W10/08 , B60W10/24 , B60W10/26 , B60W20/00 , B60W2510/244 , Y02T10/6239 , Y02T10/6269 , Y02T10/7005 , Y02T10/7072 , Y02T90/122 , Y02T90/14
摘要： A secondary self-resonant coil is installed at substantially the central region of the bottom face of the vehicle body, receiving electric power from a power feeding apparatus in a non-contact manner by resonating with a primary self-resonant coil of a power feeding apparatus provided external to the vehicle, via an electromagnetic field. In a power reception mode from the power feeding apparatus, high voltage is generated at the wire end of the secondary self-resonant coil, causing generation of a high electric field around the wire end. In order to keep the wire end distant from an ECU that is an electric apparatus located closest to the secondary self-resonant coil, the secondary self-resonant coil is arranged such that the wire end is located at a side opposite to the side where the ECU is deviated relative to the bilateral symmetric axis of the vehicle body.
摘要翻译：次级自谐振线圈安装在车体底面的大致中央区域处，通过与供电装置的初级自谐振线圈共振而以非接触方式从供电装置接收电力通过电磁场设置在车辆外部。在来自供电装置的电力接收模式中，在二次自谐振线圈的导线端产生高电压，从而在电线端部产生高电场。为了使电线端远离最靠近次级自谐振线圈的电气设备的ECU，次级自谐振线圈被布置成使得电线端部位于与 ECU相对于车身的双侧对称轴偏离。

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