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1. 发明授权

US09218983B2 Etching method and device 有权
标题翻译：蚀刻方法和装置
公开(公告)号：US09218983B2
公开(公告)日：2015-12-22
申请号：US14131713
申请日：2012-07-12
申请人： Takashi Dokan , Masaru Sasaki , Hikaru Kamata
发明人： Takashi Dokan , Masaru Sasaki , Hikaru Kamata
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/67 , H01L21/033
CPC分类号： H01L21/3065 , H01J2237/334 , H01L21/0206 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/67069
摘要： The etching method of the present invention comprises first and second etching steps (S1, S3) having different types of films to be etched and different types of process gases. During a transition from the first etching step (S1) to the second etching step (S3), a first switching process step (S2) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the first etching step. During a transition from the second etching step (S3) to the first etching step (S1), a second switching process step (S4) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the second etching step.
摘要翻译：本发明的蚀刻方法包括具有不同类型的被蚀刻膜和不同类型的工艺气体的第一和第二蚀刻步骤（S1，S3）。在从第一蚀刻步骤（S1）到第二蚀刻步骤（S3）的转变期间，执行第一切换处理步骤（S2），其中处理容器填充有清洁气体，并且清洁气体变成等离子体以在第一蚀刻步骤中除去沉积在处理容器中的反应产物。在从第二蚀刻步骤（S3）到第一蚀刻步骤（S1）的转变期间，执行第二切换处理步骤（S4），其中处理容器填充有清洁气体，并且清洁气体变成等离子体以在第二蚀刻步骤中除去沉积在处理容器中的反应产物。

2. 发明申请

US20140308815A1 ETCHING METHOD AND DEVICE 有权
标题翻译：蚀刻方法和装置
公开(公告)号：US20140308815A1
公开(公告)日：2014-10-16
申请号：US14131713
申请日：2012-07-12
申请人： Takashi Dokan , Masaru Sasaki , Hikaru Kamata
发明人： Takashi Dokan , Masaru Sasaki , Hikaru Kamata
IPC分类号： H01L21/3065 , H01L21/67
CPC分类号： H01L21/3065 , H01J2237/334 , H01L21/0206 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/67069
摘要： The etching method of the present invention comprises first and second etching steps (S1, S3) having different types of films to be etched and different types of process gases. During a transition from the first etching step (S1) to the second etching step (S3), a first switching process step (S2) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the first etching step. During a transition from the second etching step (S3) to the first etching step (S1), a second switching process step (S4) is performed in which the process container is filled with a cleaning gas and the cleaning gas is turned into a plasma to remove the reaction product deposited in the process container in the second etching step.
摘要翻译：本发明的蚀刻方法包括具有不同类型的被蚀刻膜和不同类型的工艺气体的第一和第二蚀刻步骤（S1，S3）。在从第一蚀刻步骤（S1）到第二蚀刻步骤（S3）的转变期间，执行第一切换处理步骤（S2），其中处理容器填充有清洁气体，并且清洁气体变成等离子体以在第一蚀刻步骤中除去沉积在处理容器中的反应产物。在从第二蚀刻步骤（S3）到第一蚀刻步骤（S1）的转变期间，执行第二切换处理步骤（S4），其中处理容器填充有清洁气体，并且清洁气体变成等离子体以在第二蚀刻步骤中除去沉积在处理容器中的反应产物。

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