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1. 发明授权

US09123818B2 Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof 有权
标题翻译：用于溶液工艺的组合物，使用其制造的电子器件及其制造方法
公开(公告)号：US09123818B2
公开(公告)日：2015-09-01
申请号：US13322193
申请日：2010-05-24
申请人： Hyun Jae Kim , Woong Hee Jeong , Byung Du Ahn , Gun Hee Kim
发明人： Hyun Jae Kim , Woong Hee Jeong , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/06 , H01L27/12
CPC分类号： H01L29/7869 , B82Y10/00 , H01L21/02628 , H01L27/1225 , H01L29/0665 , H01L29/0673 , H01L29/66969 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.
摘要翻译：示例性实施例提供了用于溶液工艺的组合物，使用其制备的电子器件及其制造方法。使用溶胶 - 凝胶法形成氧化物纳米结构。使用氧化物纳米结构形成氧化物薄膜晶体管。

2. 发明申请

US20120080678A1 COMPOSITIONS FOR SOLUTION PROCESS, ELECTRONIC DEVICES FABRICATED USING THE SAME, AND FABRICATION METHODS THEREOF 有权
标题翻译：用于解决方法的组合物，使用其制造的电子器件及其制造方法
公开(公告)号：US20120080678A1
公开(公告)日：2012-04-05
申请号：US13322193
申请日：2010-05-24
申请人： Hyun Jae Kim , Woong Hee Jeong , Byung Du Ahn , Gun Hee Kim
发明人： Hyun Jae Kim , Woong Hee Jeong , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786 , B29C71/02 , H01L21/336
CPC分类号： H01L29/7869 , B82Y10/00 , H01L21/02628 , H01L27/1225 , H01L29/0665 , H01L29/0673 , H01L29/66969 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.
摘要翻译：示例性实施方案提供了溶液方法的组合物，使用其制备的电子器件及其制造方法。使用溶胶 - 凝胶法形成氧化物纳米结构。使用氧化物纳米结构形成氧化物薄膜晶体管。

3. 发明授权

US09178073B2 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor 有权
标题翻译：用于薄膜晶体管，溅射靶和薄膜晶体管的半导体层的氧化物
公开(公告)号：US09178073B2
公开(公告)日：2015-11-03
申请号：US13989944
申请日：2011-11-28
申请人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786 , C01G19/00 , C23C14/08 , C23C14/34 , H01L21/02 , C04B35/453 , C23C14/54 , C23C14/58 , C04B35/01 , C04B35/457 , H01L27/12
CPC分类号： H01L29/7869 , C01G19/006 , C01P2006/10 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086 , C23C14/3407 , C23C14/548 , C23C14/5806 , C23C14/5873 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/78693
摘要： This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
摘要翻译：用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，并且当表示为[Zn]时，包含在氧化物中的金属元素的含量（at％）满足式（1）至（3） [Sn]和[In]。 [In] /（[In] + [Zn] + [Sn]）≥-0.53×[Zn] /（[Zn] + [Sn]）+0.36（1）[In] /（[In] ] + [Sn]）≥2.28×[Zn] /（[Zn] + [Sn]）-2.01（2）[In] /（[In] + [Zn] + [Sn]）＆ ] /（[Zn] + [Sn]） - 0.32（3）本发明能够提供实现高迁移率并具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物。

4. 发明申请

US20130341617A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管半导体层氧化物，具有氧化硅的薄膜晶体管的半导体层和薄膜晶体管
公开(公告)号：US20130341617A1
公开(公告)日：2013-12-26
申请号：US14004020
申请日：2012-03-08
申请人： Hiroaki Tao , Aya Miki , Shinya Morita , Satoshi Yasuno , Toshihiro Kugimiya , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Hiroaki Tao , Aya Miki , Shinya Morita , Satoshi Yasuno , Toshihiro Kugimiya , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/12
CPC分类号： H01L21/02554 , G02F1/1368 , H01L21/02565 , H01L21/02587 , H01L21/02631 , H01L21/477 , H01L29/12 , H01L29/66969 , H01L29/7869
摘要： The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])≧0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.
摘要翻译：用于薄膜晶体管的本发明的氧化物是含有In，Zn和Sn的In-Zn-Sn系氧化物，其中，当In-Zn-Sn系中含有的金属元素的含量（原子％当[In] /（[In] + [Sn]）[Zn]，[In] + [Sn]表示[Zn]，[Sn]和[In]时，In-Zn-Sn系氧化物满足下述（2） ]）@ 0.5; 或[In] /（[In] + [Sn]）> = 0.5时的以下表达式（1），（3）和（4）。 [In] + [Zn] + [Sn]）@ 0.3 - - - （1），[In] /（[In] + [Zn] + [Sn]）@ 1.4×{[Zn] /([Zn]+[Sn])}-0.5 - - - （2），[Zn] /（[In] + [Zn] + [Sn]）@ 0.83 - - - （3） In] /（[In] + [Zn] + [Sn]） - - - （4）。根据本发明，可以获得用于薄膜晶体管的氧化物薄膜，其提供具有优异的开关特性的TFT，并且在溅射中具有高溅射速率并且在湿蚀刻中具有适当控制的蚀刻速率。

5. 发明授权

US08686426B2 Thin film transistor having plural semiconductive oxides, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor 有权
标题翻译：具有多个半导体氧化物的薄膜晶体管，薄膜晶体管阵列面板及包括该半导体氧化物的显示装置以及薄膜晶体管的制造方法
公开(公告)号：US08686426B2
公开(公告)日：2014-04-01
申请号：US13555889
申请日：2012-07-23
申请人： Byung Du Ahn , Ji Hun Lim , Gun Hee Kim , Kyoung Won Lee , Je Hun Lee
发明人： Byung Du Ahn , Ji Hun Lim , Gun Hee Kim , Kyoung Won Lee , Je Hun Lee
IPC分类号： H01L27/14
CPC分类号： H01L29/7869 , H01L29/78696
摘要： A plural semiconductive oxides TFT (sos-TFT) provides improved electrical functionality in terms of charge-carrier mobility and/or threshold voltage variability. The sos-TFT may be used to form a thin film transistor array panel for display devices. An example sos-TFT includes: an insulated gate electrode; a first semiconductive oxide layer having a composition including a first semiconductive oxide; and a second semiconductive oxide layer having a different composition that also includes a semiconductive oxide. The first and second semiconductive oxide layers have respective channel regions that are capacitively influenced by a control voltage applied to the gate electrode. In one embodiment, the second semiconductive oxide layer includes at least one additional element that is not included in the first semiconductive oxide layer where the additional element is one of gallium (Ga), silicon (Si), niobium (Nb), hafnium (Hf), and germanium (Ge).
摘要翻译：多个半导体氧化物TFT（sos-TFT）在电荷载流子迁移率和/或阈值电压变化性方面提供改进的电功能。 sos-TFT可以用于形成用于显示装置的薄膜晶体管阵列面板。示例sos-TFT包括：绝缘栅电极; 具有包含第一半导体氧化物的组成的第一半导体氧化物层; 以及具有不同组成的第二半导体氧化物层，其还包括半导体氧化物。第一和第二半导体氧化物层具有由施加到栅电极的控制电压的电容性影响的各个沟道区。在一个实施例中，第二半导体氧化物层包括至少一个附加元件，其不包括在第一半导体氧化物层中，其中附加元素是镓（Ga），硅（Si），铌（Nb），铪（Hf ）和锗（Ge）。

6. 发明申请

US20130248855A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，溅射靶和薄膜晶体管半导体层的氧化物
公开(公告)号：US20130248855A1
公开(公告)日：2013-09-26
申请号：US13989944
申请日：2011-11-28
申请人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Aya Miki , Shinya Morita , Toshihiro Kugimiya , Satoshi Yasuno , Jae Woo Park , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , C01G19/006 , C01P2006/10 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086 , C23C14/3407 , C23C14/548 , C23C14/5806 , C23C14/5873 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/78693
摘要： This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.
摘要翻译：用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，并且当表示为[Zn]时，包含在氧化物中的金属元素的含量（at％）满足式（1）至（3） [Sn]和[In]。 [In] /（[In] + [Zn] + [Sn]）> = - 0.53×[Zn] /（[Zn] + [Sn]）+ 0.36（1）[In] Zn] + [Sn]）> = 2.28×[Zn] /（[Zn] + [Sn]）-2.01（2）[In] /（[In] + [Zn] + [Sn] Zn] /（[Zn] + [Sn]） - 0.32（3）本发明使得能够提供实现高迁移率且具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物。

7. 发明授权

US09070777B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US09070777B2
公开(公告)日：2015-06-30
申请号：US13543235
申请日：2012-07-06
申请人： Gun Hee Kim , Jae Woo Park , Jin Hyun Park , Byung Du Ahn , Je Hun Lee , Yeon Hong Kim , Jung Hwa Kim , Sei-Yong Park , Jun Hyun Park , Kyoung Won Lee , Ji Hun Lim
发明人： Gun Hee Kim , Jae Woo Park , Jin Hyun Park , Byung Du Ahn , Je Hun Lee , Yeon Hong Kim , Jung Hwa Kim , Sei-Yong Park , Jun Hyun Park , Kyoung Won Lee , Ji Hun Lim
IPC分类号： H01L29/12 , H01L21/00 , H01L29/786 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02554
摘要： A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.
摘要翻译：半导体器件包括：衬底，包括设置在衬底上的氧化物半导体的半导体层，设置在半导体层上的阻挡层和设置在阻挡层上的绝缘层。半导体层包括氧化物半导体，并且阻挡层包括具有比氧化物半导体的半导体材料低的标准电极电位的材料，比氧化物半导体的半导体材料低的电子亲和力或比氧化物半导体的半导体材料。绝缘层包括硅基氧化物或硅基氮化物中的至少一种，并且绝缘层包括与阻挡层的上表面接触的部分。

8. 发明申请

US20140319512A1 THIN-FILM TRANSISTOR STRUCTURE, AS WELL AS THIN-FILM TRANSISTOR AND DISPLAY DEVICE EACH HAVING SAID STRUCTURE 有权
标题翻译：薄膜晶体管结构，如薄膜晶体管和每个具有结构的显示器件
公开(公告)号：US20140319512A1
公开(公告)日：2014-10-30
申请号：US14113322
申请日：2012-04-19
申请人： Takeaki Maeda , Toshihiro Kugimiya , Jun Ho Song , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
发明人： Takeaki Maeda , Toshihiro Kugimiya , Jun Ho Song , Je Hun Lee , Byung Du Ahn , Gun Hee Kim
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1222 , H01L29/78693
摘要： There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains Sn and at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer.
摘要翻译：提供了一种氧化物半导体层，当在有机EL显示器和液晶显示器等显示装置中沉积钝化层等时，能够使薄膜晶体管的电特性稳定，而不需要氧化处理层。本发明的薄膜晶体管结构至少在衬底上具有氧化物半导体层，源 - 漏电极和钝化层，从衬底侧开始，其中氧化物半导体层是第一氧化物半导体层和第二氧化物半导体层; 第一氧化物半导体层的Zn含量占所有金属元素的百分比为50原子％以上，第一氧化物半导体层形成在源 - 漏电极和钝化层侧; 所述第二氧化物半导体层含有Sn和选自In，Ga和Zn中的至少一种元素，并且所述第二氧化物半导体层形成在所述基板侧; 并且第一氧化物半导体层与源 - 漏电极和钝化层直接接触。

9. 发明授权

US08743307B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08743307B2
公开(公告)日：2014-06-03
申请号：US13490978
申请日：2012-06-07
申请人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
发明人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
IPC分类号： G02F1/136
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.
摘要翻译：显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

10. 发明申请

US20130114013A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20130114013A1
公开(公告)日：2013-05-09
申请号：US13490978
申请日：2012-06-07
申请人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee
发明人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee
IPC分类号： H01L33/08 , G02F1/136
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at % , and a ratio of the zinc to the tin is about 1.38 to about 3.88.
摘要翻译：显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

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