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1. 发明授权

US08743307B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08743307B2
公开(公告)日：2014-06-03
申请号：US13490978
申请日：2012-06-07
申请人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
发明人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao , Hiroshi Goto
IPC分类号： G02F1/136
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at %, and a ratio of the zinc to the tin is about 1.38 to about 3.88.
摘要翻译：显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

2. 发明授权

US09190523B2 Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same 有权
标题翻译：氧化物半导体，包括该氧化物半导体的薄膜晶体管和包括该氧化物半导体的薄膜晶体管阵列面板
公开(公告)号：US09190523B2
公开(公告)日：2015-11-17
申请号：US13554393
申请日：2012-07-20
申请人： Byung Du Ahn , Je Hun Lee , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Jae Woo Park , Jin Seong Park , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao
发明人： Byung Du Ahn , Je Hun Lee , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Jae Woo Park , Jin Seong Park , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao
IPC分类号： H01L29/786 , H01L21/02 , H01L29/66 , H01L27/12
CPC分类号： H01L29/7869 , H01L21/02565 , H01L27/1225 , H01L29/66969
摘要： An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.
摘要翻译：氧化物半导体包括包含选自锌（Zn）和锡（Sn）中的至少一种的第一材料和第二材料，其中通过减去第二材料和氧之间的电负性差值获得的值（O ）从第一材料和氧（O）之间的电负性差值小于约1.3。

3. 发明授权

US09070777B2 Semiconductor device and method for forming the same 有权
标题翻译：半导体装置及其形成方法
公开(公告)号：US09070777B2
公开(公告)日：2015-06-30
申请号：US13543235
申请日：2012-07-06
申请人： Gun Hee Kim , Jae Woo Park , Jin Hyun Park , Byung Du Ahn , Je Hun Lee , Yeon Hong Kim , Jung Hwa Kim , Sei-Yong Park , Jun Hyun Park , Kyoung Won Lee , Ji Hun Lim
发明人： Gun Hee Kim , Jae Woo Park , Jin Hyun Park , Byung Du Ahn , Je Hun Lee , Yeon Hong Kim , Jung Hwa Kim , Sei-Yong Park , Jun Hyun Park , Kyoung Won Lee , Ji Hun Lim
IPC分类号： H01L29/12 , H01L21/00 , H01L29/786 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02554
摘要： A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.
摘要翻译：半导体器件包括：衬底，包括设置在衬底上的氧化物半导体的半导体层，设置在半导体层上的阻挡层和设置在阻挡层上的绝缘层。半导体层包括氧化物半导体，并且阻挡层包括具有比氧化物半导体的半导体材料低的标准电极电位的材料，比氧化物半导体的半导体材料低的电子亲和力或比氧化物半导体的半导体材料。绝缘层包括硅基氧化物或硅基氮化物中的至少一种，并且绝缘层包括与阻挡层的上表面接触的部分。

4. 发明申请

US20130114013A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20130114013A1
公开(公告)日：2013-05-09
申请号：US13490978
申请日：2012-06-07
申请人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee
发明人： Jae Woo Park , Je Hun Lee , Byung Du Ahn , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Kyoung Won Lee
IPC分类号： H01L33/08 , G02F1/136
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at % , and a ratio of the zinc to the tin is about 1.38 to about 3.88.
摘要翻译：显示装置包括：第一基板，设置在第一基板上的栅极线，包括栅电极，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线并连接到源电极，设置在半导体层上并面对源电极的漏电极和设置在数据线上的钝化层，其中半导体层由包含铟，锡和锌的氧化物半导体形成。铟以约5原子％（at％）至约50原子％的量存在，并且锌与锡的比例为约1.38至约3.88。

5. 发明授权

US08890139B2 Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel 有权
标题翻译：钝化层，薄膜晶体管阵列面板的解决方案组成，薄膜晶体管阵列面板的制造方法
公开(公告)号：US08890139B2
公开(公告)日：2014-11-18
申请号：US13534752
申请日：2012-06-27
申请人： Byung Du Ahn , Seung Ho Yeon , Sei-Yong Park , Mi-Hyae Park , Bu Sop Song , Tae Gweon Lee , Jun Hyun Park , Je Hun Lee , Jae Woo Park
发明人： Byung Du Ahn , Seung Ho Yeon , Sei-Yong Park , Mi-Hyae Park , Bu Sop Song , Tae Gweon Lee , Jun Hyun Park , Je Hun Lee , Jae Woo Park
IPC分类号： H01L29/10 , H01L29/12 , H01L29/51 , G02F1/1362 , H01L23/29 , C08L83/04 , C08G77/16 , H01L27/12 , C08G77/00 , C08G77/20 , H01L27/32
CPC分类号： G03F7/0757 , C08G77/16 , C08G77/20 , C08G77/80 , C08L83/04 , G02F1/136227 , G03F7/16 , G03F7/20 , H01L23/296 , H01L27/1225 , H01L27/1248 , H01L27/1288 , H01L27/3258 , H01L29/517 , H01L2924/0002 , C08L83/00 , H01L2924/00
摘要： A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.
摘要翻译：提供钝化层溶液组合物。根据本发明的示例性实施方案的钝化层溶液组合物包括由下述化学式1表示的有机硅氧烷树脂。在化学式1中，R是选自饱和烃或具有1至约25个碳原子的不饱和烃中的至少一个取代基，x和y各自独立地为1至约200，并且其中每个波浪线表示键合到H原子或x硅氧烷单元或硅氧烷单元，或与包含x硅氧烷单元或y硅氧烷单元或其组合的另一硅氧烷链的x硅氧烷单元或硅氧烷单元的键。

6. 发明申请

US20130099228A1 SOLUTION COMPOSITION FOR PASSIVATION LAYER, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：用于钝化层，薄膜晶体管阵列的解决方案组合物和薄膜晶体管阵列的制造方法
公开(公告)号：US20130099228A1
公开(公告)日：2013-04-25
申请号：US13534752
申请日：2012-06-27
申请人： Byung Du Ahn , Seung Ho Yeon , Sei-Yong Park , Mi-Hyae Park , Bu Sop Song , Tae Gweon Lee , Jun Hyun Park , Je Hun Lee , Jae Woo Park
发明人： Byung Du Ahn , Seung Ho Yeon , Sei-Yong Park , Mi-Hyae Park , Bu Sop Song , Tae Gweon Lee , Jun Hyun Park , Je Hun Lee , Jae Woo Park
IPC分类号： H01L29/786 , C08K5/103 , C08G77/20 , C08K5/06 , H01L21/42 , C08G77/12
CPC分类号： G03F7/0757 , C08G77/16 , C08G77/20 , C08G77/80 , C08L83/04 , G02F1/136227 , G03F7/16 , G03F7/20 , H01L23/296 , H01L27/1225 , H01L27/1248 , H01L27/1288 , H01L27/3258 , H01L29/517 , H01L2924/0002 , C08L83/00 , H01L2924/00
摘要： A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.
摘要翻译：提供钝化层溶液组合物。根据本发明的示例性实施方案的钝化层溶液组合物包括由下述化学式1表示的有机硅氧烷树脂。在化学式1中，R是选自饱和烃或具有1至约25个碳原子的不饱和烃中的至少一个取代基，x和y各自独立地为1至约200，并且其中每个波浪线表示键合到H原子或x硅氧烷单元或硅氧烷单元，或与包含x硅氧烷单元或y硅氧烷单元或其组合的另一硅氧烷链的x硅氧烷单元或硅氧烷单元的键。

7. 发明授权

US09147022B2 Method for calculating parameter values of thin-film transistor and apparatus for performing the method 有权
标题翻译：用于计算薄膜晶体管的参数值的方法和用于执行该方法的装置
公开(公告)号：US09147022B2
公开(公告)日：2015-09-29
申请号：US13481579
申请日：2012-05-25
申请人： Je-Hun Lee , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park , Jae-Woo Park , Dae-Hwan Kim , Sung-Chul Kim , Yong-Woo Jeon
发明人： Je-Hun Lee , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park , Jae-Woo Park , Dae-Hwan Kim , Sung-Chul Kim , Yong-Woo Jeon
IPC分类号： G06F7/60 , G06F17/10 , G06F17/50
CPC分类号： G06F17/5036
摘要： A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.
摘要翻译：用于计算TFT的参数值的方法包括使用TFT的非晶半导体的带隙中的整个能带上的状态密度函数来计算一组模拟电流 - 电压（I-V）值。所述方法还包括将所述一组模拟I-V值与所述TFT的测量I-V值的集合进行比较，以确定所述TFT的参数的值。该方法还可以包括使用根据频率测量的TFT的一组静电电容电压（C-V）值来计算受主状态密度函数gA的值。该方法还可以包括在带隙中的整个能带上确定施主状态密度函数gD的值和接口状态密度函数Dit的值。

8. 发明授权

US08841663B2 Oxide semiconductor thin-film transistor 有权
标题翻译：氧化物半导体薄膜晶体管
公开(公告)号：US08841663B2
公开(公告)日：2014-09-23
申请号：US13080413
申请日：2011-04-05
申请人： Je-Hun Lee , Jae-Woo Park , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park
发明人： Je-Hun Lee , Jae-Woo Park , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/45
CPC分类号： H01L29/45 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface.
摘要翻译：薄膜晶体管包括栅电极，源电极，漏电极，栅极绝缘层和氧化物半导体图案。源极和漏极包括具有第一氧化物形成自由能的第一金属元件。氧化物半导体图案具有与栅极绝缘层接触的第一表面和与源极和漏极电极接触以与第一表面相对的第二表面。氧化物半导体图案包括具有绝对值大于或等于第一氧化物形成自由能的绝对值的第二氧化物形成自由能的添加元素，其中包括在第一表面附近的部分中的添加元素的量为零或小于包含在靠近第二表面的部分中的添加元素的量。

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