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1. 发明授权

US06924542B2 Trench isolation without grooving 有权
公开(公告)号：US06924542B2
公开(公告)日：2005-08-02
申请号：US10901948
申请日：2004-07-29
申请人： Hua Ji , Dong Jun Kim , Jin-Ho Kim , Chuck Jang
发明人： Hua Ji , Dong Jun Kim , Jin-Ho Kim , Chuck Jang
IPC分类号： H01L21/762 , H01L29/00 , H01L21/8238
CPC分类号： H01L21/76229
摘要： A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

2. 发明授权

US06787409B2 Method of forming trench isolation without grooving 有权
标题翻译：无沟槽形成沟槽隔离的方法
公开(公告)号：US06787409B2
公开(公告)日：2004-09-07
申请号：US10305464
申请日：2002-11-26
申请人： Hua Ji , Dong Jun Kim , Jin-Ho Kim , Chuck Jang
发明人： Hua Ji , Dong Jun Kim , Jin-Ho Kim , Chuck Jang
IPC分类号： H01L218238
CPC分类号： H01L21/76229
摘要： A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.
摘要翻译：提供了一种形成没有沟槽氧化物开槽的浅沟槽隔离区的方法和结构。特别地，一种方法包括两步氧化法，其中氧化物衬垫在沟槽的内表面上划线，并且沟槽填充有本体氧化物层，优选使用高密度等离子体化学气相沉积（HDP-CVD）工艺。氧化物衬垫和本体氧化物层被形成为具有相似的蚀刻速率。因此，当在堆叠结构之间蚀刻氧化物衬垫和本体氧化物层时，形成基本平坦且没有凹槽的公共电介质顶表面。

3. 发明授权

US08950264B2 Jig device usable with flat display panel and endurance test method using the same 有权
标题翻译：可用于平板显示面板的夹具装置及使用其的耐久试验方法
公开(公告)号：US08950264B2
公开(公告)日：2015-02-10
申请号：US12984667
申请日：2011-01-05
申请人： Jin Woo Nam , Byung Joo Paek , Dong Jun Kim
发明人： Jin Woo Nam , Byung Joo Paek , Dong Jun Kim
IPC分类号： G01M7/02
CPC分类号： G01M7/027
摘要： A jig device usable with a flat display panel which includes a frame including a base frame having an opening and a vertical frame which extends vertically along a perimeter of the base frame and a supporting frame coupled to the base frame within the frame, on which the flat display panel is disposed, wherein the supporting frame includes fixing portions provided at corners thereof to support respective corners of the flat display panel.
摘要翻译：一种可用于平板显示面板的夹具装置，其包括框架，该框架包括具有开口的基座框架和沿着所述底座框架的周边垂直延伸的垂直框架，以及支撑框架，其联接到所述框架内的所述基座框架，平面显示面板设置在其中，支撑框架包括设置在其角部的固定部分，以支撑平面显示面板的各个角部。

4. 发明申请

US20140373904A1 PASTE COMPOSITION FOR SOLAR CELL ELECTRODE AND ELECTRODE PRODUCED THEREFROM 审中-公开
标题翻译：用于太阳能电池的电极组合物及其生产的电极
公开(公告)号：US20140373904A1
公开(公告)日：2014-12-25
申请号：US14362736
申请日：2012-03-30
申请人： Young Wook Choi , Dong Jun Kim , Eun Kyung Kim , Dae Seop Song
发明人： Young Wook Choi , Dong Jun Kim , Eun Kyung Kim , Dae Seop Song
IPC分类号： H01L31/0224 , H01B1/16 , H01B1/22
CPC分类号： H01L31/022425 , H01B1/16 , H01B1/22 , Y02E10/50
摘要： The present invention relates to a paste composition for a solar cell electrode and an electrode produced therefrom. The present invention relates to a paste composition for a solar cell electrode, and an electrode produced therefrom, the paste composition comprising conductive powders, a glass frit, and an organic vehicle, the glass frit including PbO, SiO2, and TeO2, wherein an amount of said TeO2 included in the glass frit is about 1-20% by weight.
摘要翻译：本发明涉及一种太阳能电池用电极用糊料组合物及其制造的电极。本发明涉及一种太阳能电池用电极用糊料组合物及由其制造的电极，所述糊料组合物含有导电粉末，玻璃料和有机载体，所述玻璃料包含PbO，SiO 2和TeO 2，其中，所述玻璃料中包含的所述TeO 2为约1-20重量％。

5. 发明申请

US20120214997A1 METHOD OF PREPARING SITAGLIPTIN AND INTERMEDIATES USED THEREIN 失效
标题翻译：制备西格列酮及其使用的中间体的方法
公开(公告)号：US20120214997A1
公开(公告)日：2012-08-23
申请号：US13502260
申请日：2010-10-19
申请人： Nam Du Kim , Ji Yeon Chang , Dong Jun Kim , Hyun Seung Lee , Jae Hyuk Jung , Young Kil Chang , Gwan Sun Lee
发明人： Nam Du Kim , Ji Yeon Chang , Dong Jun Kim , Hyun Seung Lee , Jae Hyuk Jung , Young Kil Chang , Gwan Sun Lee
IPC分类号： C07D487/04 , C07C211/29 , C07C33/48 , C07C229/34
CPC分类号： A61K31/4985 , C07D487/04
摘要： Disclosed are a novel, simple and low-cost method for preparing sitagliptin, as DPP-IV (dipeptidyl peptidase IV) inhibitor, which is useful in treating type 2 diabetes mellitus and key intermediates used in said preparation of sitagliptin.
摘要翻译：公开了一种用于制备西他列汀的新型，简单且低成本的方法，DPP-IV（二肽基肽酶IV）抑制剂，其可用于治疗所述西他列嗪制备中使用的2型糖尿病和关键中间体。

6. 发明授权

US07358149B2 Substrate isolation in integrated circuits 有权
标题翻译：集成电路中的基板隔离
公开(公告)号：US07358149B2
公开(公告)日：2008-04-15
申请号：US11193150
申请日：2005-07-29
申请人： Daniel Wang , Chunchieh Huang , Dong Jun Kim
发明人： Daniel Wang , Chunchieh Huang , Dong Jun Kim
IPC分类号： H01L21/425
CPC分类号： H01L27/11526 , H01L21/76237 , H01L21/823481 , H01L27/105 , H01L27/11539 , H01L27/11546
摘要： Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.
摘要翻译：衬底隔离沟槽（224）形成在半导体衬底（120）中。通过离子注入将掺杂剂（例如硼）注入到沟槽侧壁中，以抑制沿着侧壁的电流泄漏。在离子注入期间，晶体管栅极电介质（520）面向离子流，但在随后的热步骤中对栅极电介质的损坏退火。在一些实施例中，掺杂剂注入是成角度的植入物。植入物从晶片的相对侧进行，并且因此从每个有效区域的相对侧进行。每个有源区域包括从一侧注入的区域和从相对侧注入的区域。两个区域重叠以便于阈值电压调整。

7. 发明授权

US06746931B2 Capacitor for semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件的电容器及其制造方法
公开(公告)号：US06746931B2
公开(公告)日：2004-06-08
申请号：US10423873
申请日：2003-04-28
申请人： Kee Jeung Lee , Dong Jun Kim
发明人： Kee Jeung Lee , Dong Jun Kim
IPC分类号： H01L2120
CPC分类号： H01L21/3145 , C23C16/308 , H01L28/40 , H01L28/84 , H01L28/90
摘要： Disclosed are a capacitor for semiconductor devices capable of increasing storage capacitance and preventing leakage current, and method of manufacturing the same. The capacitor for semiconductor memory devices according to the present invention includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the upper portion of the dielectric layer, wherein the dielectric layer is a crystalline TaxOyNz layer, and the total of x, y, and z in the crystalline TaxOyNz layer is 1, and y is 0.3 to 0.5, and z is 0.1 to 0.3.
摘要翻译：公开了一种能够增加存储电容并防止漏电流的半导体器件的电容器及其制造方法。根据本发明的用于半导体存储器件的电容器包括：下电极; 形成在下电极上的电介质层; 以及形成在电介质层的上部的上电极，其中电介质层是结晶的TaxOyNz层，并且结晶TaxOyNz层中的x，y和z的总和为1，y为0.3至0.5，并且 z为0.1〜0.3。

8. 发明授权

US06448128B1 Capacitor for semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件的电容器及其制造方法
公开(公告)号：US06448128B1
公开(公告)日：2002-09-10
申请号：US09607290
申请日：2000-06-30
申请人： Kee Jeung Lee , Dong Jun Kim
发明人： Kee Jeung Lee , Dong Jun Kim
IPC分类号： H01L8242
CPC分类号： H01L28/40 , H01L21/3145 , H01L27/10852 , H01L28/84 , H01L28/91
摘要： Disclosed are a capacitor for semiconductor capable of increasing storage capacitance as well as preventing leakage current and a method of manufacturing the same. According to the present invention. A lower electrode is formed on a semiconductor substrate. The surface of the lower electrode is surface-treated so as to prevent a natural oxide layer from generating on the surface thereof. A (TaO)1-x(TiO)N layer as a dielectric is deposited on the upper part of the lower electrode. Afterwards, to crystallize the (TaO)1-x(TiO)N layer, a thermal-treatment is performed. Next, an upper electrode is formed on the upper part of the (TaO)1-x(TiO)N layer.
摘要翻译：公开了一种能够增加存储电容以及防止漏电流的半导体电容器及其制造方法。根据本发明。在半导体衬底上形成下电极。对下电极的表面进行表面处理，以防止在其表面上产生自然氧化物层。作为电介质的（TaO）1-x（TiO）N层沉积在下电极的上部。然后，为了使（TaO）1-x（TiO）N层结晶，进行热处理。接下来，在（TaO）1-x（TiO）N层的上部形成上电极。

9. 发明授权

US06339009B1 Method of manufacturing capacitor of semiconductor device 失效
标题翻译：制造半导体器件电容器的方法
公开(公告)号：US06339009B1
公开(公告)日：2002-01-15
申请号：US09708456
申请日：2000-11-09
申请人： Kee Jeung Lee , Dong Jun Kim
发明人： Kee Jeung Lee , Dong Jun Kim
IPC分类号： H01L2120
CPC分类号： H01L28/55 , H01L21/31604 , H01L21/31691 , H01L28/90
摘要： The present invention discloses a method of manufacturing a capacitor of high capacitance using a (Ta2O5)1−x(TiO2)x thin film as dielectric layer. The method according to the present invention, comprising providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; depositing a (Ta2O5)1−x—(TiO2)x thin film in an amorphous state on the lower electrode; annealing the amorphous (Ta2O5)1−x—(TiO2)x thin film at a low temperature; annealing the low temperature amorphous (Ta2O5)1−x—(TiO2)x thin film at a high temperature to form a crystalline (Ta2O5)1−x—(TiO2)x thin film as a dielectric layer; and forming an upper electrode on the (Ta2O5)1−x—(TiO2)x thin film.
摘要翻译：本发明公开了使用（Ta 2 O 5）1-x（TiO 2）x薄膜作为电介质层制造高电容电容器的方法。根据本发明的方法，包括提供半导体衬底，在其上形成选定的下部图案并覆盖中间绝缘层; 在中间绝缘层上形成下电极; 在下电极上沉积非晶态的（Ta 2 O 5）1-x-（TiO 2）x薄膜; 在低温下退火无定形（Ta2O5）1-x-（TiO2）x薄膜; 在高温下对低温无定形（Ta 2 O 5）1-x-（TiO 2）x薄膜进行退火以形成作为介电层的结晶（Ta 2 O 5）1-x-（TiO 2）x薄膜; 并在（Ta 2 O 5）1-x-（TiO 2）x薄膜上形成上电极。

10. 发明申请

US20100317868A1 METHOD OF PREPARING TAXANE DERIVATIVES AND INTERMEDIATES USED THEREIN 审中-公开
标题翻译：制备TAXANE衍生物的方法及其使用的中间体
公开(公告)号：US20100317868A1
公开(公告)日：2010-12-16
申请号：US12517980
申请日：2007-11-20
申请人： Nam Du Kim , Wooseob Shin , Jaehyuk Jung , Dong Jun Kim , Gi Jeong Kim , Young Ho Moon , Young-Kil Chang , Gwan Sun Lee , Tae Jin Choi
发明人： Nam Du Kim , Wooseob Shin , Jaehyuk Jung , Dong Jun Kim , Gi Jeong Kim , Young Ho Moon , Young-Kil Chang , Gwan Sun Lee , Tae Jin Choi
IPC分类号： C07D263/06 , C07D305/14
CPC分类号： C07D305/14 , Y02P20/55
摘要： The present invention relates to a novel method of preparing a taxane derivative having an anti-tumor and anti-leukemia activity, and intermediates used therein.
摘要翻译：本发明涉及一种制备具有抗肿瘤和抗白血病活性的紫杉烷衍生物的新方法及其中使用的中间体。

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