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    • 5. 发明授权
    • BICMOS electrostatic discharge protection circuit
    • BICMOS静电放电保护电路
    • US5521789A
    • 1996-05-28
    • US213661
    • 1994-03-15
    • James R. OhannesStephen W. ClukeyE. David HaackeRoy L. Yarbrough
    • James R. OhannesStephen W. ClukeyE. David HaackeRoy L. Yarbrough
    • H02H9/04
    • H02H9/046
    • An enhanced bipolar-transistor apparatus for protecting electronic devices from electrostatic discharge damage. The apparatus is built around a bipolar transistor coupled between a power rail and the circuit to be protected. The protection is based on the high-current-capacity path through the bipolar transistor which is opened up either by collector-to-emitter punch-through in the bipolar transistor or by the bipolar transistor going into normal conduction upon being turned on by a switch coupled to the base of the bipolar transistor. In the preferred embodiment the switch is a MOS transistor that is designed to undergo source-to-drain breakdown at a fixed threshold voltage, whereupon it activates the bipolar transistor which in turn discharges the overvoltage. In this way the advantages of the high-current-capacity bipolar transistor are obtained without the concern that fabrication vagaries will prevent the bipolar transistor from providing needed protection, such as is the situation where the punch-through phenomenon alone is relied on.
    • 一种用于保护电子器件免受静电放电损坏的增强型双极晶体管装置。 该装置围绕耦合在电源轨和待保护电路之间的双极晶体管构成。 该保护基于通过双极晶体管的大电流容量路径,其通过双极晶体管中的集电极到发射极穿通而被双极晶体管打开,或者通过由开关导通的双极晶体管进入正常导通 耦合到双极晶体管的基极。 在优选实施例中,开关是被设计成在固定阈值电压下经历源极到漏极击穿的MOS晶体管,于是它激活双极晶体管,该双极晶体管又导通过电压。 以这种方式,可以获得大电流双极晶体管的优点,而不用担心制造变形会阻止双极晶体管提供所需的保护,例如仅依靠穿通现象的情况。
    • 6. 发明授权
    • TTL tristate circuit for output pulldown transistor
    • TTL三态电路,用于输出下拉晶体管
    • US5051623A
    • 1991-09-24
    • US537903
    • 1990-06-16
    • Roy L. YarbroughJulio R. Estrada
    • Roy L. YarbroughJulio R. Estrada
    • H03K17/04H03K19/013H03K19/0175H03K19/082H03K19/088
    • H03K19/013H03K19/0826
    • The lower output pulldown tristate circuit for a TTL tristate output buffer circuit includes the enable signal invertor buffer having an OE signal input and an OE signal output providing output enable OE signals, and a Miller killer transistor element having collector and emitter nodes coupled between the base node of the TTL tristate output pulldown transistor and the low potential power rail. The base node of an emitter follower transistor element is coupled to the OE signal input and the emitter node provides a DC Miller killer DCMK signal output in phase with the OE signal input. A voltage divider couples the DCMK signal output to the base node of the Miller killer transistor element for discharging the base of the output pulldown transistor in response ot a high potential DCMK signal during the high impedance tristate at the output. The DC Miller killer circuit is applied in a high speed TTL tristate output and multi-bit line driver. The emitter follower DCMK signal output and voltage divider coupling reduce DCMK signal generation delay, eliminate current hogging between Miller killer transistor elements of the multiple output buffers of a multi-bit output, and dispense with the ballast resistors which introduce delay.
    • 用于TTL三态输出缓冲器电路的较低输出下拉三态电路包括具有& O和O信号输入的使能信号反相器缓冲器和提供输出使能OE信号的OE信号输出,以及具有耦合在 TTL三态输出下拉晶体管的基极节点和低电位电源轨。 发射极跟随器晶体管元件的基极节点连接到&Upbar&O信号输入端,发射极节点提供与上拉和O信号输入同相的DC Miller杀手DCMK信号输出。 分压器将DCMK信号输出端耦合到Miller抑制晶体管元件的基极节点,用于在输出端的高阻抗三态期间响应于高电位DCMK信号而放电输出下拉晶体管的基极。 DC Miller杀手电路应用于高速TTL三态输出和多位线驱动器。 射极跟随器DCMK信号输出和分压器耦合降低了DCMK信号产生延迟,消除了多位输出的多输出缓冲器的米勒杀伤晶体管元件之间的电流占空比,并且省去了引入延迟的镇流电阻。
    • 7. 发明授权
    • VCC translator circuit
    • VCC转换器电路
    • US5408147A
    • 1995-04-18
    • US116920
    • 1993-09-07
    • Roy L. YarbroughJay R. Chapin
    • Roy L. YarbroughJay R. Chapin
    • H03K19/003H03K19/00H03K19/0175H03K19/0185H03K19/0948H03K19/094
    • H03K19/0013H03K19/018521H03K19/018592
    • A circuit for translating logic signals from circuits supplied by one high-potential power rail to circuits supplied by another high-potential power rail in which the potentials of the two high-potential rails are not equal. The translator of the present invention is utilized in the transition from a 3V-supplied circuit to a 5V-supplied circuit, or vice versa, without any static current I.sub.CCt and regardless of the power-up sequencing. The static current is eliminated by isolating the output of the first stage of the translator, which is at the first high-potential power rail level, from all transistors of the second stage that are tied directly to the second high-potential power rail. In the preferred embodiment of the invention the transistors of the second stage that are powered by the second high-potential power rail are PMOS transistors and the isolation is achieved by linking those PMOS transistors to the first stage through a series of controlling NMOS transistors. In that way, the PMOS transistors will be completely turned off when necessary so as to avoid any undesirable conduction paths occurring due to differences in the potentials of the two high-potential power rails.
    • 用于将由一个高电位电源轨提供的电路的逻辑信号转换成由两个高电位轨道的电位不相等的另一个高电位电源轨提供的电路的电路。 本发明的转换器用于从3V提供的电路到5V供电的电路的转换,反之亦然,而没有任何静态电流ICCt,而不管上电顺序如何。 通过将直接连接到第二高电位电力轨的第二级的所有晶体管与位于第一高电位电力轨电平的转换器的第一级的输出隔离来消除静态电流。 在本发明的优选实施例中,由第二高电位电源轨供电的第二级的晶体管是PMOS晶体管,并且通过一系列控制NMOS晶体管将那些PMOS晶体管连接到第一级来实现隔离。 以这种方式,PMOS晶体管在必要时将完全关闭,以避免由于两个高电位电源轨的电位差而产生的任何不期望的导通路径。
    • 8. 发明授权
    • BICMOS input buffer circuit with integral passgate
    • 带集成通道的BICMOS输入缓冲电路
    • US5289056A
    • 1994-02-22
    • US898029
    • 1992-06-12
    • Susan M. KeownRoy L. Yarbrough
    • Susan M. KeownRoy L. Yarbrough
    • H03K19/013H03K19/082H03K17/04
    • H03K19/013H03K19/0826
    • A BICMOS input buffer circuit (20) incorporates an integral CMOS passgate circuit (P2,N2) between bipolar input (Q1) and output (Q3,Q4,Q5) transistors of the input buffer circuit. Latch enable inputs (LE) receive latch enable signals for operating the input buffer circuit and internal passgate in a transparent mode for passing data signals from the input (V.sub.IN) to the output (V.sub.OUT) and in a blocking mode for blocking data signals. The internal CMOS passgate circuit (P2,N2) is coupled into the input buffer circuit (20) to control nodes of the transistor output pullup (Q4,Q5) and pulldown (Q3) for controlling the conducting states of the respective transistor output pullup and pulldown to implement the blocking and transparent modes. A third passgate transistor (P3) may also be coupled between a control node (m1) of the transistor output pullup (Q4,Q5) and the low potential power rail (GND) for positive turn off of the output pullup. A dynamic power enhancement circuit (DPC) provides transient enhancement for the transition from the blocking mode to transparent mode.
    • BICMOS输入缓冲电路(20)在输入缓冲电路的双极性输入(Q1)和输出(Q3,Q4,Q5)晶体管之间并入集成的CMOS通道电路(P2,N2)。 锁存使能输入(LE)接收锁存使能信号,用于在透明模式下操作输入缓冲电路和内部通道,以将数据信号从输入(VIN)传送到输出(VOUT),并以阻塞模式阻塞数据信号。 内部CMOS通路电路(P2,N2)耦合到输入缓冲电路(20)中以控制晶体管输出上拉(Q4,Q5)和下拉(Q3)的节点,用于控制各个晶体管输出上拉的导通状态, 下拉以实现阻塞和透明模式。 第三通道晶体管(P3)还可以耦合在晶体管输出上拉(Q4,Q5)的控制节点(m1)和低电位电源轨(GND)之间,用于输出上拉的正断开。 动态功率增强电路(DPC)为从阻塞模式到透明模式的转换提供瞬态增强。