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1. 发明授权

US09034752B2 Methods of exposing conductive vias of semiconductor devices and associated structures 有权
标题翻译：暴露半导体器件和相关结构的导电通孔的方法
公开(公告)号：US09034752B2
公开(公告)日：2015-05-19
申请号：US13733508
申请日：2013-01-03
申请人： Hongqi Li , Anurag Jindal , Irina Vasilyeva
发明人： Hongqi Li , Anurag Jindal , Irina Vasilyeva
IPC分类号： H01L21/4763 , H01L21/768 , H01L23/538
CPC分类号： H01L21/76865 , H01L21/7684 , H01L21/76841 , H01L21/76898 , H01L23/481 , H01L23/5384 , H01L2924/0002 , Y10S438/927 , H01L2924/00
摘要： Methods of exposing conductive vias of semiconductor devices may comprise conformally forming a barrier material over conductive vias extending from a backside surface of a substrate. A self-planarizing isolation material may be formed over the barrier material. An exposed surface of the self-planarizing isolation material may be substantially planar. A portion of the self-planarizing isolation material, a portion of the barrier material, and a portion of protruding material of the conductive vias may be removed to expose the conductive vias. Removal of the self-planarizing isolation material, the barrier material, and the conductive vias may be stopped after exposing at least one laterally extending portion of the barrier material.
摘要翻译：暴露半导体器件的导电通孔的方法可以包括在从衬底的背面延伸的导电通孔上保形地形成阻挡材料。可以在阻挡材料之上形成自平坦化隔离材料。自平坦化隔离材料的暴露表面可以是基本上平面的。可以去除自平坦化隔离材料的一部分，阻挡材料的一部分和导电通孔的突出材料的一部分，以露出导电通路。在暴露阻挡材料的至少一个横向延伸部分之后，可以停止去除自平坦化隔离材料，阻挡材料和导电通孔。

2. 发明申请

US20140183740A1 METHODS OF EXPOSING CONDUCTIVE VIAS OF SEMICONDUCTOR DEVICES AND ASSOCIATED STRUCTURES 有权
标题翻译：半导体器件和相关结构的导电透视方法
公开(公告)号：US20140183740A1
公开(公告)日：2014-07-03
申请号：US13733508
申请日：2013-01-03
申请人： Hongqi Li , Anurag Jindal , Irina Vasilyeva
发明人： Hongqi Li , Anurag Jindal , Irina Vasilyeva
IPC分类号： H01L21/768 , H01L23/538
CPC分类号： H01L21/76865 , H01L21/7684 , H01L21/76841 , H01L21/76898 , H01L23/481 , H01L23/5384 , H01L2924/0002 , Y10S438/927 , H01L2924/00
摘要： Methods of exposing conductive vias of semiconductor devices may comprise conformally forming a barrier material over conductive vias extending from a backside surface of a substrate. A self-planarizing isolation material may be formed over the barrier material. An exposed surface of the self-planarizing isolation material may be substantially planar. A portion of the self-planarizing isolation material, a portion of the barrier material, and a portion of protruding material of the conductive vias may be removed to expose the conductive vias. Removal of the self-planarizing isolation material, the barrier material, and the conductive vias may be stopped after exposing at least one laterally extending portion of the barrier material.
摘要翻译：暴露半导体器件的导电通孔的方法可以包括在从衬底的背面延伸的导电通孔上保形地形成阻挡材料。可以在阻挡材料之上形成自平坦化隔离材料。自平坦化隔离材料的暴露表面可以是基本上平面的。可以去除自平坦化隔离材料的一部分，阻挡材料的一部分和导电通孔的突出材料的一部分，以露出导电通孔。在暴露阻挡材料的至少一个横向延伸部分之后，可以停止去除自平坦化隔离材料，阻挡材料和导电通孔。

3. 发明授权

US07618874B1 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US07618874B1
公开(公告)日：2009-11-17
申请号：US12114124
申请日：2008-05-02
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/20 , H01L21/108
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

4. 发明授权

US07396570B2 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 有权
公开(公告)号：US07396570B2
公开(公告)日：2008-07-08
申请号：US11394988
申请日：2006-03-30
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
IPC分类号： H01L21/4763 , H05H1/24
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

5. 发明授权

US06586285B1 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 有权
标题翻译：等离子体增强化学气相沉积法形成含硅化钛的层
公开(公告)号：US06586285B1
公开(公告)日：2003-07-01
申请号：US10094017
申请日：2002-03-06
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
IPC分类号： H01L2184
CPC分类号： C23C16/4407 , C23C16/14 , C23C16/42 , C23C16/4404
摘要： A first cleaning is conducted on a plasma enhanced chemical vapor deposition chamber at room ambient pressure. After the first cleaning, elemental titanium comprising layers are chemical vapor deposited on a first plurality of substrates within the chamber using at least TiCl4. Thereafter, titanium silicide comprising layers are plasma enhanced chemical vapor deposited on a second plurality of substrates within the chamber using at least TiCl4 and a silane. Thereafter, a second cleaning is conducted on the chamber at ambient room pressure. In one implementation after the first cleaning, an elemental titanium comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber. In another implementation, a titanium silicide comprising layer is chemical vapor deposited over internal surfaces of the chamber while no semiconductor substrate is received within the chamber.
摘要翻译：在室内环境压力下，在等离子体增强化学气相沉积室上进行第一次清洗。在第一次清洁之后，使用至少TiCl 4，在室内的第一组多个衬底上化学气相沉积包含层的元素钛。此后，包含层的硅化钛是使用至少TiCl 4和硅烷沉积在室内的第二多个基板上的等离子体增强化学气相。此后，在室内在室内进行第二清洗。在第一次清洁之后的一个实施方案中，元素钛包含层在室的内表面上化学气相沉积，而在室内没有接收半导体衬底。在另一个实施方案中，包含硅化钛的层在室的内表面上化学气相沉积，而在腔室内不接收半导体衬底。

6. 发明申请

US20090275185A1 METHODS OF FORMING CAPACITORS 有权
标题翻译：形成电容器的方法
公开(公告)号：US20090275185A1
公开(公告)日：2009-11-05
申请号：US12114124
申请日：2008-05-02
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/02
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

7. 发明申请

US20060172087A1 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 有权
标题翻译：等离子体增强化学气相沉积法形成含硅化钛的层
公开(公告)号：US20060172087A1
公开(公告)日：2006-08-03
申请号：US11394988
申请日：2006-03-30
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
IPC分类号： C23C16/14
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.
摘要翻译：公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。该比例足够高以避免钛硅化物在衬底上的可测量沉积。或者，在第一时间段内没有可测量的硅烷进料到室中。无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段时间。如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

8. 发明授权

US08318578B2 Method of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08318578B2
公开(公告)日：2012-11-27
申请号：US12575263
申请日：2009-10-07
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/20
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

9. 发明授权

US07393563B2 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 有权
标题翻译：等离子体增强化学气相沉积法形成含硅化钛的层
公开(公告)号：US07393563B2
公开(公告)日：2008-07-01
申请号：US11394989
申请日：2006-03-30
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
IPC分类号： C23C16/14 , C23C16/24
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium suicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.
摘要翻译：公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。该比例足够高以避免钛硅化物在衬底上的可测量沉积。或者，在第一时间段内没有可测量的硅烷进料到室中。无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段时间。如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

10. 发明授权

US06767823B2 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 失效
标题翻译：等离子体增强化学气相沉积法形成含硅化钛的层
公开(公告)号：US06767823B2
公开(公告)日：2004-07-27
申请号：US10094580
申请日：2002-03-06
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip H. Campbell , Gurtej S. Sandhu
IPC分类号： H01L214763
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium silicide comprising layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide comprising layer on the substrate.
摘要翻译：公开了在衬底上形成包含层的硅化钛的化学气相沉积方法。首先将TiCl 4和至少一种硅烷以等于或高于TiCl 4与硅烷的第一体积比率进料到室中。该比例足够高以避免钛硅化物在衬底上的可测量沉积。或者，在第一时间段内没有可测量的硅烷进料到室中。无论如何，在第一阶段之后，将TiCl 4和至少一种硅烷以等于或低于第二体积比的TiCl 4与硅烷进料至室中第二时间段。如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。无论如何，第二次进料对于等离子体有效地增强化学气相沉积在基底上的包含硅化钛的层。

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