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1. 发明授权

US08318578B2 Method of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08318578B2
公开(公告)日：2012-11-27
申请号：US12575263
申请日：2009-10-07
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/20
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

2. 发明授权

US07618874B1 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US07618874B1
公开(公告)日：2009-11-17
申请号：US12114124
申请日：2008-05-02
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/20 , H01L21/108
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

3. 发明申请

US20090275185A1 METHODS OF FORMING CAPACITORS 有权
标题翻译：形成电容器的方法
公开(公告)号：US20090275185A1
公开(公告)日：2009-11-05
申请号：US12114124
申请日：2008-05-02
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： H01L21/02
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

4. 发明申请

US20100025362A1 Method of Forming Capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US20100025362A1
公开(公告)日：2010-02-04
申请号：US12575263
申请日：2009-10-07
申请人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
发明人： Kevin Shea , Brett Busch , Farrell Good , Irina Vasilyeva , Vishwanath Bhat
IPC分类号： C23F1/00 , B32B37/00 , H01L21/02
CPC分类号： H01L27/10852 , H01L27/10894 , H01L28/91 , Y10T156/10
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield comprises a nitride. Etching is conducted within the opening through the nitride-comprising shield. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode. Other aspects and implementations are contemplated.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽包括氮化物。通过包含氮化物的护罩在开口内进行蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。考虑了其他方面和实现。

5. 发明授权

US07468323B2 Method of forming high aspect ratio structures 有权
标题翻译：形成高纵横比结构的方法
公开(公告)号：US07468323B2
公开(公告)日：2008-12-23
申请号：US10788899
申请日：2004-02-27
申请人： Kevin Torek , Kevin Shea , Thomas Graettinger
发明人： Kevin Torek , Kevin Shea , Thomas Graettinger
IPC分类号： H01L21/302
CPC分类号： H01L28/91 , H01L21/31111 , H01L21/31116 , H01L21/31138 , H01L21/32134 , H01L21/32135 , H01L27/10852
摘要： An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.
摘要翻译：蚀刻工艺包括在基片上提供电介质第一膜和在电介质第一膜上提供牺牲第二膜。诸如容器电容器的导电结构形成在第一和第二膜的凹部中。导电结构通过蚀刻工艺暴露于其外表面，该蚀刻工艺抵抗导电结构的破坏性破坏。

6. 发明授权

US07442319B2 Poly etch without separate oxide decap 失效
标题翻译：聚蚀刻无单独的氧化物剥落
公开(公告)号：US07442319B2
公开(公告)日：2008-10-28
申请号：US11168023
申请日：2005-06-28
申请人： Kevin Shea
发明人： Kevin Shea
IPC分类号： C03C25/68
CPC分类号： H01L21/32134 , B81C1/00595 , H01L21/76838 , H01L27/1052
摘要： The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uniform etch initiation and a high etch selectivity, that may be used in manufacturing a variety of electronic devices such as integrated circuits (ICs) and micro electro-mechanical (MEM) devices. The etching solution is formed by adding 35% ammonium hydroxide solution to a hot 12.5% TMAH solution at about 70° C. at a rate of 1% by volume, every hour. Such an etch solution and method provides a simple, inexpensive, single step self initiating poly etch that has etch stop ratios of over 200 to 1 over underlying insulator layers and TiN layers.
摘要翻译：将氢氧化铵尖峰用于热四甲基氢氧化铵（TMAH）溶液以在多晶硅（多晶）蚀刻工艺中形成原位聚氧化物去贴图步骤，导致具有均匀蚀刻开始的单步骤快速多晶刻蚀工艺和高蚀刻选择性，其可用于制造各种电子器件，例如集成电路（IC）和微机电（MEM）器件。蚀刻溶液通过在约70℃以每小时1体积％的速率将35％氢氧化铵溶液加入到热的12.5％TMAH溶液中形成。这种蚀刻溶液和方法提供了一种简单，便宜的单步自发聚合蚀刻，其在下面的绝缘体层和TiN层上具有超过200比1的蚀刻停止比。

7. 发明申请

US20080099817A1 METHOD FOR OBTAINING EXTREME SELECTIVITY OF METAL NITRIDES AND METAL OXIDES 审中-公开
标题翻译：获得金属硝酸盐和金属氧化物极端选择性的方法
公开(公告)号：US20080099817A1
公开(公告)日：2008-05-01
申请号：US11963688
申请日：2007-12-21
申请人： Kevin Shea
发明人： Kevin Shea
IPC分类号： H01L29/86
CPC分类号： H01L21/306 , H01L21/31111 , H01L21/32134 , H01L21/76865 , H01L27/10852 , H01L28/60 , H01L28/91
摘要： Methods for etching metal nitrides and metal oxides include using ultradilute HF solutions and buffered, low-pH HF solutions containing a minimal amount of the hydrofluoric acid species H2F2. The etchant can be used to selectively remove metal nitride layers relative to doped or undoped oxides, tungsten, polysilicon, and titanium nitride. A method is provided for producing an isolated capacitor, which can be used in a dynamic random access memory cell array, on a substrate using sacrificial layers selectively removed to expose outer surfaces of the bottom electrode.
摘要翻译：用于蚀刻金属氮化物和金属氧化物的方法包括使用超稀释HF溶液和含有最少量氢氟酸物质H 2 F 2 N 2的缓冲的低pH HF溶液。蚀刻剂可用于相对于掺杂或未掺杂的氧化物，钨，多晶硅和氮化钛选择性地除去金属氮化物层。提供了一种用于在衬底上产生可用于动态随机存取存储器单元阵列中的隔离电容器的方法，该牺牲层选择性地去除以暴露底部电极的外表面。

8. 发明申请

US20060046513A1 Selective etching of oxides to metal nitrides and metal oxides 有权
标题翻译：选择性地将氧化物蚀刻到金属氮化物和金属氧化物上
公开(公告)号：US20060046513A1
公开(公告)日：2006-03-02
申请号：US11155809
申请日：2005-06-17
申请人： Kevin Shea , Kevin Torek
发明人： Kevin Shea , Kevin Torek
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76802 , H01L21/31111 , H01L21/31116 , H01L21/76838
摘要： A method is provided for selectively etching native oxides or other contaminants to metal nitrides and metal oxides during manufacture of a semiconductor device. he method utilizes a substantially non-aqueous etchant which includes a source of fluorine ions. In a preferred embodiment, the etchant comprises H2SO4 and HF. The etchant selectively etches native and doped oxides or other contaminants without excessively etching metal nitrides or metal oxides on the substrate or on adjacent exposed surfaces.
摘要翻译：提供了一种在制造半导体器件期间选择性地将天然氧化物或其它污染物刻蚀成金属氮化物和金属氧化物的方法。他方法利用包括氟离子源的基本非水性蚀刻剂。在优选的实施方案中，蚀刻剂包括H 2 SO 4 H 4和HF。蚀刻剂选择性地蚀刻天然的和掺杂的氧化物或其它污染物，而不会过度地蚀刻衬底上或邻近暴露表面上的金属氮化物或金属氧化物。

9. 发明申请

US20060011586A1 Method of etching nitrides 审中-公开
标题翻译：蚀刻氮化物的方法
公开(公告)号：US20060011586A1
公开(公告)日：2006-01-19
申请号：US10892332
申请日：2004-07-14
申请人： Kevin Shea
发明人： Kevin Shea
IPC分类号： B44C1/22 , H01L21/461
CPC分类号： H01L21/31111 , H01L27/10855
摘要： Etching chemistries for etching nitride materials selective to oxide materials and selective to resist patterning materials are disclosed along with methods of etching nitride materials, such as dielectric nitride materials and metal nitride materials. The etching chemistries and methods incorporate using an ultra-dilute (approximately 1500:1 to 2500:1) 49% hydrofluoric (HF) acid and optionally adding ozone (O3) to the etching mixture that etches nitride materials selective to oxide materials, such as oxides doped with impurities or non-doped oxides, and resist patterning materials. The dilution of the HF acid will affect the selectivity of the etching solution (nitride material to the oxide or resist materials) and can be tailored to obtain a desired etching result.
摘要翻译：蚀刻用于蚀刻对氧化物材料选择性并且抗蚀剂图案化材料选择性的氮化物材料的蚀刻化学品与氮化物材料如介电氮化物材料和金属氮化物材料的蚀刻方法一起公开。蚀刻化学和方法使用超稀释（约1500:1至2500:1）49％氢氟酸（HF）酸和任选地向蚀刻氮化物的蚀刻混合物中加入臭氧（O 3 3 N）对氧化物材料（例如掺杂有杂质或非掺杂氧化物的氧化物）和抗蚀剂图案化材料选择性材料。 HF酸的稀释将影响蚀刻溶液（氮化物材料对氧化物或抗蚀剂材料）的选择性，并且可以被调整以获得所需的蚀刻结果。

10. 发明申请

US20060008926A1 Semiconductor fabrication that includes surface tension control 审中-公开
公开(公告)号：US20060008926A1
公开(公告)日：2006-01-12
申请号：US11217037
申请日：2005-08-31
申请人： Kevin Torek , Kevin Shea
发明人： Kevin Torek , Kevin Shea
IPC分类号： H01L21/00
CPC分类号： H01L28/40 , H01L21/31111 , H01L21/31116 , H01L21/31625 , H01L27/1085
摘要： In one embodiment, a method includes providing a semiconductor substrate that includes a memory container having a double-sided capacitor. The method also includes vapor phase etching a layer adjacent to the side wall of the memory container with a vapor having a surface tension lowering agent.

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