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1. 发明授权

US08951903B2 Graded dielectric structures 有权
标题翻译：分级电介质结构
公开(公告)号：US08951903B2
公开(公告)日：2015-02-10
申请号：US13366025
申请日：2012-02-03
申请人： Dan Gealy , Vishwanath Bhat , Cancheepuram V. Srividya , M. Noel Rocklein
发明人： Dan Gealy , Vishwanath Bhat , Cancheepuram V. Srividya , M. Noel Rocklein
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/28 , C23C16/455 , H01L21/314 , H01L21/316 , H01L29/51 , H01L49/02 , H01L29/78
CPC分类号： H01L21/022 , C23C16/45529 , H01L21/02148 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31641 , H01L21/31645 , H01L28/40 , H01L28/56 , H01L29/517 , H01L29/78
摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
摘要翻译：梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。

2. 发明授权

US08940388B2 Insulative elements 有权
标题翻译：绝缘元素
公开(公告)号：US08940388B2
公开(公告)日：2015-01-27
申请号：US13038605
申请日：2011-03-02
申请人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
发明人： Vassil Antonov , Jennifer K. Sigman , Vishwanath Bhat , Matthew N. Rocklein , Bhaskar Srinivasan , Chris Carlson
IPC分类号： B32B7/02 , H01G4/33 , H01G4/30 , H01G4/12
CPC分类号： H01L28/40 , H01G4/1209 , H01G4/1218 , H01G4/1236 , H01G4/1254 , H01G4/1272 , H01G4/306 , H01G4/33 , H01L21/02172 , H01L21/02356 , H01L21/225 , Y10T428/2495
摘要： Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
摘要翻译：描述了形成绝缘元件的方法，包括形成具有第一介电常数的第一金属氧化物材料，形成具有与第一介电常数不同的第二介电常数的第二金属氧化物材料，并加热该结构的至少部分至少结晶第一电介质材料和第二电介质材料中的至少一个的一部分。描述了形成电容器的方法，包括形成第一电极，在第一电极上形成具有第一氧化物和第二氧化物的介电材料，以及在电介质材料上形成第二电极。还描述了包括电介质材料的结构。

3. 发明授权

US08760845B2 Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same 有权
标题翻译：包含掺杂硅的氧化锆和使用其的电容器的电容器电介质
公开(公告)号：US08760845B2
公开(公告)日：2014-06-24
申请号：US13370312
申请日：2012-02-10
申请人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
发明人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
IPC分类号： H01G4/06 , H01G4/10
CPC分类号： H01L28/40 , H01L21/02159
摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
摘要翻译：电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。

4. 发明授权

US08518486B2 Methods of forming and utilizing rutile-type titanium oxide 有权
标题翻译：形成和利用金红石型氧化钛的方法
公开(公告)号：US08518486B2
公开(公告)日：2013-08-27
申请号：US12778893
申请日：2010-05-12
申请人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
发明人： Nik Mirin , Tsai-Yu Huang , Vishwanath Bhat , Chris Carlson , Vassil Antonov
IPC分类号： C23C16/00
CPC分类号： H01L21/02186 , C01G23/04 , C23C16/405 , C23C16/45534 , H01G4/085 , H01G4/1227 , H01G4/33 , H01L21/02233 , H01L21/02244 , H01L21/28556 , H01L21/32051 , H01L23/367 , H01L23/3735 , H01L23/3736 , H01L27/10808 , H01L27/1085 , H01L27/10852 , H01L28/40 , H01L28/60 , H01L2924/0002 , H05K1/0203 , Y10T428/24802 , Y10T428/24975 , H01L2924/00
摘要： Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.
摘要翻译：一些实施方案包括形成金红石型氧化钛的方法。可以形成单层的氮化钛。然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

5. 发明申请

US20130208403A1 CAPACITOR DIELECTRIC COMPRISING SILICON-DOPED ZIRCONIUM OXIDE AND CAPACITOR USING THE SAME 有权
标题翻译：含有硅氧化锆的电容器电介质和使用其的电容器
公开(公告)号：US20130208403A1
公开(公告)日：2013-08-15
申请号：US13370312
申请日：2012-02-10
申请人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
发明人： Noel Rocklein , Vishwanath Bhat , Chris Carlson
IPC分类号： H01G4/10 , C09D1/00
CPC分类号： H01L28/40 , H01L21/02159
摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.
摘要翻译：电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。

6. 发明申请

US20120267757A1 CAPACITOR STRUCTURE WITH METAL BILAYER AND METHOD FOR USING THE SAME 有权
标题翻译：金属双层电容器结构及其使用方法
公开(公告)号：US20120267757A1
公开(公告)日：2012-10-25
申请号：US13090277
申请日：2011-04-20
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01L29/92 , H01L21/04
CPC分类号： H01L28/75 , H01L27/10844 , H01L28/65
摘要： A method for using a metal bilayer is disclosed. First, a bottom electrode is provided. Second, a dielectric layer which is disposed on and is in direct contact with the lower electrode is provided. Then, a metal bilayer which serves as a top electrode in a capacitor is provided. The metal bilayer is disposed on and is in direct contact with the dielectric layer. The metal bilayer consists of a noble metal in direct contact with the dielectric layer and a metal nitride in direct contact with the noble metal.
摘要翻译：公开了一种使用金属双层的方法。首先，设置底部电极。第二，提供了设置在下电极上并与下电极直接接触的电介质层。然后，提供用作电容器中的顶部电极的金属双层。金属双层配置在电介质层上并与电介质层直接接触。金属双层由与电介质层直接接触的贵金属和与贵金属直接接触的金属氮化物组成。

7. 发明授权

US08263457B2 Methods of forming a plurality of capacitors 有权
标题翻译：形成多个电容器的方法
公开(公告)号：US08263457B2
公开(公告)日：2012-09-11
申请号：US13269756
申请日：2011-10-10
申请人： Vishwanath Bhat , Kevin R. Shea
发明人： Vishwanath Bhat , Kevin R. Shea
IPC分类号： H01L21/8242
CPC分类号： H01L28/91
摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.
摘要翻译：形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。中间区域包括沟槽。导电的含金属氮化物的材料形成在开口内并抵靠沟槽的侧壁部分以小于完全填充沟槽。沟槽内的导电材料的内侧壁在含氮气氛中退火。用液体蚀刻溶液蚀刻阵列区域内的绝缘材料，有效地暴露阵列区域内的导电材料的外侧壁部分。阵列区域内的导电材料被并入多个电容器中。

8. 发明申请

US20120220098A1 Methods of Forming Dielectric Material-Containing Structures 有权
标题翻译：形成含介电材料的结构的方法
公开(公告)号：US20120220098A1
公开(公告)日：2012-08-30
申请号：US13461067
申请日：2012-05-01
申请人： Noel Rocklein , Chris M. Carlson , Dave Peterson , Cunyu Yang , Praveen Vaidyanathan , Vishwanath Bhat
发明人： Noel Rocklein , Chris M. Carlson , Dave Peterson , Cunyu Yang , Praveen Vaidyanathan , Vishwanath Bhat
IPC分类号： H01L21/02 , H01L21/316
CPC分类号： H01L21/28273 , H01L21/02175 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3142 , H01L27/10852 , H01L28/40 , H01L28/91 , H01L29/51 , H01L29/513 , H01L29/78
摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.
摘要翻译：一些实施例包括电介质结构。这些结构包括彼此直接相对的第一和第二部分。第一部分可以包含第一相和第二相的均匀混合物。第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成，等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

9. 发明申请

US20120202358A1 GRADED DIELECTRIC STRUCTURES 有权
标题翻译：分级电介质结构
公开(公告)号：US20120202358A1
公开(公告)日：2012-08-09
申请号：US13366025
申请日：2012-02-03
申请人： Dan Gealy , Vishwanath Bhat , Cancheepuram V. Srividya , M. Noel Rocklein
发明人： Dan Gealy , Vishwanath Bhat , Cancheepuram V. Srividya , M. Noel Rocklein
IPC分类号： H01L21/314
CPC分类号： H01L21/022 , C23C16/45529 , H01L21/02148 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31641 , H01L21/31645 , H01L28/40 , H01L28/56 , H01L29/517 , H01L29/78
摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.
摘要翻译：梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。

10. 发明申请

US20120098093A1 Capacitors and Methods of Forming Capacitors 有权
标题翻译：电容器和形成电容器的方法
公开(公告)号：US20120098093A1
公开(公告)日：2012-04-26
申请号：US13338527
申请日：2011-12-28
申请人： Vishwanath Bhat , Noel Rocklein , F. Daniel Gealy
发明人： Vishwanath Bhat , Noel Rocklein , F. Daniel Gealy
IPC分类号： H01L29/02
CPC分类号： H01L28/60 , Y10T29/417
摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.
摘要翻译：形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。在导电TiO x N y上形成电容器电介质。在电容器电介质上形成导电的第二电容器电极材料。考虑了其他方面和实现方式，包括独立于制造方法的电容器。

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