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    • 3. 发明授权
    • Damascene write poles produced via full film plating
    • 大马士革通过全电镀制作电极
    • US08486285B2
    • 2013-07-16
    • US12544998
    • 2009-08-20
    • Ronghui ZhouMing JiangXiaohai XiangJinwen WangGuanghong LuoYun-Fei Li
    • Ronghui ZhouMing JiangXiaohai XiangJinwen WangGuanghong LuoYun-Fei Li
    • B44C1/22
    • G11B5/855Y10T29/49048
    • A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.
    • 用于形成写极的方法包括在晶片的衬底层上形成阻挡层,所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口,以及在停止层上形成缓冲层,所述缓冲层具有 在停止层的开口上方开口。 该方法还包括在晶片上镀覆一层磁性材料,在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料,在晶片上进行研磨或蚀刻操作,以去除第一 牺牲材料并且去除第一牺牲材料,在晶片上设置第二牺牲材料,以及在晶片上执行抛光操作以去除镶嵌沟槽,第二牺牲材料和缓冲层之上的磁性材料的区域。
    • 4. 发明授权
    • Method and system for providing an improved hard bias structure
    • 提供改进的硬偏置结构的方法和系统
    • US08343319B1
    • 2013-01-01
    • US12238156
    • 2008-09-25
    • Guanxiong LiXiaohai XiangMing MaoMahendra Pakala
    • Guanxiong LiXiaohai XiangMing MaoMahendra Pakala
    • C23C14/34
    • G11B5/3932G11B5/3163
    • A method and system for providing a magnetic transducer is described. The method and system define a magnetoresistive sensor in a track width direction, provide hard bias material(s) adjacent to the sensor in the track width direction, and provide sacrificial capping layer(s) on a portion of the hard bias material(s). The sacrificial capping layer(s) have a first height in a stripe height direction. The method and system also provide a mask for defining a stripe height of the sensor. The mask covers at least part of the sensor and has a second height in the stripe height direction. The second height is less than the first height. The method and system define the stripe height of the sensor while the mask covers the sensor. The sacrificial capping layer(s) are configured to prevent removal of the portion of the hard bias material(s) while the stripe height is defined.
    • 描述了一种用于提供磁换能器的方法和系统。 该方法和系统在磁道宽度方向上限定磁阻传感器,在磁道宽度方向上提供与传感器相邻的硬偏置材料,并在硬偏置材料的一部分上提供牺牲性覆盖层, 。 牺牲覆盖层具有条纹高度方向上的第一高度。 该方法和系统还提供用于定义传感器的条纹高度的掩模。 掩模覆盖传感器的至少一部分,并且在条纹高度方向上具有第二高度。 第二个高度小于第一个高度。 该方法和系统定义传感器的条纹高度,同时掩模覆盖传感器。 牺牲覆盖层被构造成在限定条纹高度的同时防止去除硬偏移材料的一部分。