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    • 2. 发明申请
    • Method for forming a semiconductor product and semiconductor product
    • 用于形成半导体产品和半导体产品的方法
    • US20070077748A1
    • 2007-04-05
    • US11241877
    • 2005-09-30
    • Dominik OlligsHocine BoubekeurVeronika PoleiNicolas NagelTorsten MuellerLars BachThomas MikolajickJoachim Deppe
    • Dominik OlligsHocine BoubekeurVeronika PoleiNicolas NagelTorsten MuellerLars BachThomas MikolajickJoachim Deppe
    • H01L21/4763H01L21/3205H01L21/44
    • H01L27/115H01L21/76838H01L27/11521H01L27/11568
    • A semiconductor product (1) includes a plurality of wordlines extending along a first lateral direction (x) along a substrate surface (22) and also includes contact structures (3) as well as filling structures (4) therebetween. Along the first direction (x) the contact structures (3) and the filling structures (4) are arranged in alternating order between two respective wordlines. Each contact structure (3) serves to connect two active areas (23) separated by one respective trench isolation filling (24) to a respective bitline (14). Accordingly, the width of the first contact structures (3) is much larger than the width of the bitlines (14) along the first direction (x). According to embodiments of the invention, tapered upper portions (9) of the contact structures (3) are shaped, the upper portions (9) having a width being significantly smaller than the width of the contact structures (3) along the first direction (x). Thereby, forming the bitlines (14) in direct contact to top surfaces (7) of contact structures (3) is possible without the risk of short circuits between adjacent bitlines (14).
    • 半导体产品(1)包括沿衬底表面(22)沿着第一横向(x)延伸的多个字线,并且还包括接触结构(3)以及它们之间的填充结构(4)。 沿着第一方向(x),接触结构(3)和填充结构(4)以两个相应字线之间的交替顺序排列。 每个接触结构(3)用于将由一个相应的沟槽隔离填充物(24)分开的两个有效区域(23)连接到相应的位线(14)。 因此,第一接触结构(3)的宽度比沿着第一方向(x)的位线(14)的宽度大得多。 根据本发明的实施例,接触结构(3)的锥形上部(9)成形,上部(9)的宽度明显小于接触结构(3)沿着第一方向(3)的宽度 X)。 因此,形成与接触结构(3)的顶表面(7)直接接触的位线(14)是可能的,而不会在相邻位线(14)之间发生短路。