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    • 1. 发明授权
    • Frequency tunable optical oscillator with fiber grating mirrors
    • 具有光纤光栅镜的频率可调光学振荡器
    • US06917633B2
    • 2005-07-12
    • US10376455
    • 2003-03-03
    • Ho-Young KimEun-Soo NamKyoung-Ik Cho
    • Ho-Young KimEun-Soo NamKyoung-Ik Cho
    • H01S3/05H01S3/067H01S3/08H01S3/082H01S3/1055H01S3/16H01S3/10H01S3/083
    • H01S3/06791H01S3/06725H01S3/0675H01S3/08022H01S3/082H01S3/1055H01S3/1608
    • There is provided a millimeter wave band frequency optical oscillator predicted to be used as a millimeter wave oscillating frequency signal source in a base station of a millimeter wave wireless transmission system. The optical oscillator has a double resonator structure in which a pair of wavelength tunable fiber grating mirrors are inserted into a unilateral fiber-ring laser resonator in order to internally and additionally form a linear laser resonator. The double resonator structure composed of the two stable laser resonators can oscillate laser of two modes. Due to a beat phenomenon occurring between the two modes, received laser is modulated to an ultra-speed frequency of 60 GHz or greater. A variation in the gain within a resonator is induced by a polarization controller using the dependency of laser modes upon polarization. A modulation frequency is consecutively changed from 60 GHz to 80 GHz by controlling the wavelength of light reflected by the fiber grating mirrors.
    • 提供了在毫米波无线传输系统的基站中预测用作毫米波振荡频率信号源的毫米波段频率光学振荡器。 光学振荡器具有双谐振器结构,其中一对波长可调光纤光栅镜被插入到单边光纤环激光谐振器中,以便在内部并另外形成线性激光谐振器。 由两个稳定的激光谐振器组成的双谐振器结构可以振荡两种模式的激光。 由于在两种模式之间发生拍子现象,所接收的激光器被调制到60GHz或更大的超速频率。 谐振器内增益的变化由偏振控制器引起,该偏振控制器使用激光模式对极化的依赖性。 通过控制由光纤光栅镜反射的光的波长,调制频率从60GHz连续地变化到80GHz。
    • 6. 发明授权
    • High-resolution field emission display
    • 高分辨率场致发射显示
    • US06690116B2
    • 2004-02-10
    • US09872285
    • 2001-05-31
    • Yoon-Ho SongYoung-Rae ChoSeung-Youl KangMoon-Youn JungChi-Sun HwangJin-Ho LeeKyoung-Ik Cho
    • Yoon-Ho SongYoung-Rae ChoSeung-Youl KangMoon-Youn JungChi-Sun HwangJin-Ho LeeKyoung-Ik Cho
    • G09G310
    • H01J31/127
    • A high-resolution field emission display that applies a field emission device (or a field emission array) being an electron source element to a flat panel display device. The field emission display includes an upper plate and a lower plate that face each other, wherein the lower plate and the upper plate are vacuum-packaged in parallel positions. A dot pixel of the lower plate includes a high-voltage amorphous silicon thin film transistor formed on the glass substrate of the lower plate, a diode type field emission film partially formed on the drain of the high-voltage amorphous silicon TFT, a passivation insulation layer formed on the high-voltage amorphous silicon TFT and the lateral side of the diode type field emission film, and an electron beam focusing electrode/light-shading film which vertically overlaps with the high-voltage amorphous silicon TFT on some parts of the passivation insulation layer and is formed on a lateral side of the diode type field emission film. A dot pixel of the upper plate includes a transparent electrode formed on the glass substrate of the upper plate, and a red, green or blue phosphor formed on some parts of the transparent electrode. Therefore, the high-resolution field emission display device can obtain an effect of focusing the electron beam trajectory and a light-shading effect for the TFT at the same time, and thus remarkably enhance the performance and the resolution of the field emission display.
    • 一种高分辨率场致发射显示器,其将作为电子源元件的场发射器件(或场致发射阵列)应用于平板显示器件。 场发射显示器包括彼此面对的上板和下板,其中下板和上板被平行地真空包装。 下板的点像素包括形成在下板的玻璃基板上的高压非晶硅薄膜晶体管,部分地形成在高压非晶硅TFT的漏极上的二极管型场致发射膜,钝化绝缘层 在高电压非晶硅TFT上形成的层和二极管型场致发射膜的侧面,以及与钝化的一些部分上的高压非晶硅TFT垂直重叠的电子束聚焦电极/遮光膜 并且形成在二极管型场致发射膜的侧面上。 上板的点像素包括形成在上板的玻璃基板上的透明电极和形成在透明电极的一些部分上的红色,绿色或蓝色荧光体。 因此,高分辨率场致发射显示装置可以同时获得对TFT的电子束轨迹和遮光效果的聚焦效果,从而显着提高场发射显示的性能和分辨率。
    • 7. 发明授权
    • Cathode structure for field emission device and method of fabricating the same
    • 场致发射器件的阴极结构及其制造方法
    • US06682383B2
    • 2004-01-27
    • US09860397
    • 2001-05-17
    • Young-Rae ChoJin-Ho LeeYoon-Ho SongSeung-Youl KangMoon-Youn JungKyoung-Ik ChoDo-Hyung KimChi-Sun Hwang
    • Young-Rae ChoJin-Ho LeeYoon-Ho SongSeung-Youl KangMoon-Youn JungKyoung-Ik ChoDo-Hyung KimChi-Sun Hwang
    • H01J1304
    • H01J9/025H01J2201/30403
    • A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature. Therefore, the present invention provides a method of fabricating a cathode for a triode-type field emission device using particulate emitter that is synthesized at a high temperature of 600° C. over, as the emitter material.
    • 提供了场致发射器件的阴极结构及其制造方法。 用于形成阴极的电子发射用发射体材料形成在颗粒状发射体中,微粒发射体由电子能够以低电场容易地发射的材料形成。 本发明相对于传统技术的显着优点是本发明使用光刻工艺或剥离工艺将发射极材料图案化成阴极电极。 在剥离过程中,使用牺牲层对发光化合物进行图案化。 此外,在本发明的另一个实施例中,公开了一种在低工艺温度下使用颗粒发射体材料容易地制造用于三极管型场致发射器件的阴极的方法。 因此,本发明提供一种使用在600℃的高温下合成的粒子发射体作为发射极材料的三极管型场致发射器件的阴极的制造方法。
    • 8. 发明授权
    • Method of manufacturing GaAs metal semiconductor field effect transistor
    • 制造GaAs金属半导体场效应晶体管的方法
    • US5314833A
    • 1994-05-24
    • US996052
    • 1992-12-23
    • Kyung-Ho LeeKyoung-Ik ChoYong-Tak Lee
    • Kyung-Ho LeeKyoung-Ik ChoYong-Tak Lee
    • H01L29/812H01L21/22H01L21/225H01L21/265H01L21/338
    • H01L29/66871H01L21/2258H01L21/2654H01L21/26553H01L21/2656
    • A method of manufacturing a GaAs field effect transistor comprises depositing a silicon thin film 202 on a semi-insulating semiconductor substrate 201, forming a first sensitive film 203 by a photolithography to define channel areas and ion-implanting n-type dopants into the substrate to form an activation layer, removing the first sensitive film, forming a second sensitive film 203a on the silicon thin film by photolithography to define an ohmic contact area and then forming a highly doped impurity layer on the side of the activation layer by way of an ion-implantation process, depositing a passivation film 206 over the entire surface of the substrate 201 after the removal of the sensitive film, and effecting an annealing or heat treatment, forming a third sensitive film of a predetermined pattern by using an ohmic contact forming mask, effecting a recess etching process to the surface of the substrate and forming an ohmic contact on the etched portion, and patterning a gate region by using the gate forming mask, recess-etching the surface of the substrate and depositing a low resistivity metal to form a gate.
    • 制造GaAs场效应晶体管的方法包括在半绝缘半导体衬底201上沉积硅薄膜202,通过光刻法形成第一敏感膜203,以将沟道区域和离子注入n型掺杂剂定义到衬底中 形成激活层,去除第一敏感膜,通过光刻在硅薄膜上形成第二敏感膜203a以限定欧姆接触面积,然后通过离子在激活层侧上形成高度掺杂的杂质层 在移除敏感膜之后,在衬底201的整个表面上沉积钝化膜206,进行退火或热处理,通过使用欧姆接触形成掩模形成预定图案的第三感光膜, 对衬底的表面进行凹陷蚀刻工艺,并在蚀刻部分上形成欧姆接触,并且通过栅极区域图案化 使用栅极形成掩模,凹陷蚀刻衬底的表面并沉积低电阻率金属以形成栅极。