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    • 4. 发明申请
    • Organic semiconductor device and method of fabricating the same
    • 有机半导体器件及其制造方法
    • US20070126001A1
    • 2007-06-07
    • US11497057
    • 2006-08-01
    • Sung-Yool ChoiMin Ki RyuAnsoon KimChil Seong AhHan Young Yu
    • Sung-Yool ChoiMin Ki RyuAnsoon KimChil Seong AhHan Young Yu
    • H01L29/08
    • G11C13/00B82Y10/00G11C13/0014H01L51/0075
    • An organic semiconductor device and a method of fabricating the same are provided. The device includes: a first electrode; an electron channel layer formed on the first electrode; and a second electrode formed on the electron channel layer, wherein the electron channel layer comprises: a lower organic layer formed on the first electrode; a nano-particle layer formed on the lower organic layer and including predetermined sizes of nano-particles that are spaced a predetermined distance apart from each other; and an upper organic layer formed over the nano-particle layer. Accordingly, a highly integrated organic semiconductor device can be fabricated by a simple fabrication process, and nonuniformity of devices due to threshold voltage characteristics and downsizing of the device can resolved, so that a semiconductor device having excellent performance can be implemented.
    • 提供一种有机半导体器件及其制造方法。 该装置包括:第一电极; 形成在第一电极上的电子通道层; 以及形成在所述电子通道层上的第二电极,其中所述电子通道层包括:形成在所述第一电极上的下部有机层; 形成在下部有机层上并且包括彼此间隔开预定距离的预定尺寸的纳米颗粒的纳米颗粒层; 和在纳米颗粒层上形成的上部有机层。 因此,可以通过简单的制造工艺制造高度集成的有机半导体器件,并且可以解决由于阈值电压特性而导致的器件的不均匀性和器件的小型化,从而可以实现具有优异性能的半导体器件。