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1. 发明授权

US06486047B2 Apparatus for forming strontium-tantalum-oxide thin film 有权
标题翻译：用于形成锶 - 氧化钽薄膜的设备
公开(公告)号：US06486047B2
公开(公告)日：2002-11-26
申请号：US09872279
申请日：2001-05-31
申请人： Won-Jae Lee , In-Kyu You , Yil-Suk Yang , Byoung-Gon Yu , Kyoung-Ik Cho
发明人： Won-Jae Lee , In-Kyu You , Yil-Suk Yang , Byoung-Gon Yu , Kyoung-Ik Cho
IPC分类号： H01L2126
CPC分类号： H01L21/0228 , C23C16/409 , C23C16/45542 , C23C16/45544 , C23C16/50 , H01L21/02194 , H01L21/02197 , H01L21/02274 , H01L21/31691 , Y10S438/905
摘要： An apparatus for forming Strontium-Tantalum-Oxide films and a method thereof using an atomic layer deposition tool are provided. In the Strontium-Tantalum-Oxide films deposited by using plasma and the atomic layer deposition, its leakage-current is very low, and its dielectric constant has a range of 30 to 100 depending on the there heating conditions. Therefore, the method provides structures for i) an insulating film of an NDRO-type ferroelectric memory device that has a structure of Metal-film/Ferroelectric-film/Insulating-film/Silicon, ii) a gate oxide film substituting for silicon oxide film, and iii) an insulating film of Electro Luminescent Display (ELD) device.
摘要翻译：提供一种用于形成锶钽氧化物膜的装置及其使用原子层沉积工具的方法。在通过使用等离子体和原子层沉积沉积的锶钽氧化物膜中，其漏电流非常低，并且其介电常数的范围为30至100，这取决于那里的加热条件。因此，该方法提供了i）具有金属膜/铁电体/绝缘膜/硅的结构的NDRO型铁电体存储元件的绝缘膜的结构，ii）用氧化硅膜代替的栅极氧化膜，和iii）电致发光显示器（ELD）装置的绝缘膜。

2. 发明申请

US20100141411A1 TOUCH SCREEN AND METHOD OF OPERATING THE SAME 有权
标题翻译：触摸屏及其操作方法
公开(公告)号：US20100141411A1
公开(公告)日：2010-06-10
申请号：US12534672
申请日：2009-08-03
申请人： Seongdeok AHN , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
发明人： Seongdeok AHN , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
IPC分类号： G08B6/00 , G06F3/041
CPC分类号： G06F3/044 , G06F3/016 , G06F3/045
摘要： Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole.
摘要翻译：提供一种触摸屏及其操作方法。触摸屏包括检测部分，控制部分和触觉反馈部分。检测部件检测物体的接近或接触。控制部分接收检测部分的信号以输出反馈信号。触觉反馈部分接收控制部分的反馈信号，以使用磁力向接触位置提供触觉反馈。触觉反馈使用磁偶极子的磁力。

3. 发明申请

US20100140706A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE 有权
标题翻译：制造薄膜晶体管和薄膜晶体管基板的方法
公开(公告)号：US20100140706A1
公开(公告)日：2010-06-10
申请号：US12507725
申请日：2009-07-22
申请人： Jae Bon KOO , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
发明人： Jae Bon KOO , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78603 , H01L27/1266 , H01L29/66757 , H01L29/78618
摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.
摘要翻译：提供了一种可以改善自对准的薄膜晶体管的制造方法。在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成薄膜晶体管。

4. 发明授权

US08404532B2 Transferred thin film transistor and method for manufacturing the same 有权
标题翻译：转移薄膜晶体管及其制造方法
公开(公告)号：US08404532B2
公开(公告)日：2013-03-26
申请号：US12782303
申请日：2010-05-18
申请人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
发明人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

5. 发明授权

US08119463B2 Method of manufacturing thin film transistor and thin film transistor substrate 有权
标题翻译：制造薄膜晶体管和薄膜晶体管基板的方法
公开(公告)号：US08119463B2
公开(公告)日：2012-02-21
申请号：US12507725
申请日：2009-07-22
申请人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
发明人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78603 , H01L27/1266 , H01L29/66757 , H01L29/78618
摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.
摘要翻译：提供了一种可以改善自对准的薄膜晶体管的制造方法。在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成薄膜晶体管。

6. 发明申请

US20100144088A1 METHOD FOR FORMING METAL OXIDE AND METHOD FOR FORMING TRANSISTOR STRUCTURE WITH THE SAME 审中-公开
标题翻译：形成金属氧化物的方法及其形成晶体结构的方法
公开(公告)号：US20100144088A1
公开(公告)日：2010-06-10
申请号：US12631206
申请日：2009-12-04
申请人： Jiyoung Oh , Jonghyurk Park , Seung Youl Kang , Chul Am Kim , In-Kyu You , Kyoung Ik Cho
发明人： Jiyoung Oh , Jonghyurk Park , Seung Youl Kang , Chul Am Kim , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L21/328 , C01G9/02
CPC分类号： H01L29/7869 , B82Y10/00 , C01G9/02 , C01P2002/52 , C01P2004/03 , C01P2006/40 , H01L29/66969
摘要： Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.
摘要翻译：提供了形成金属氧化物的方法。根据本发明实施方案的形成金属氧化物的方法包括制备包括掺杂剂化学物质的金属氧化物前体溶液，制备包含碱性化学物质的醇基溶液，使醇类溶液与金属氧化物前体反应溶液以形成反应物，并纯化反应物以形成金属氧化物。

7. 发明授权

US08421610B2 Touch screen and method of operating the same 有权
标题翻译：触摸屏及其操作方法
公开(公告)号：US08421610B2
公开(公告)日：2013-04-16
申请号：US12534672
申请日：2009-08-03
申请人： Seongdeok Ahn , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae Bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
发明人： Seongdeok Ahn , In-Kyu You , Jiyoung Oh , Chul Am Kim , Jae Bon Koo , Sang Seok Lee , Kyung Soo Suh , Kyoung Ik Cho
IPC分类号： G08B6/00
CPC分类号： G06F3/044 , G06F3/016 , G06F3/045
摘要： Provided are a touch screen and a method of operating the same. The touch screen includes a detecting part, a control part, and a tactile feedback part. The detecting part detects object's approach or contact. The control part receives a signal of the detecting part to output a feedback signal. The tactile feedback part receives the feedback signal of the control part to provide a tactile feedback to a contact position using a magnetic force. The tactile feedback uses the magnetic force of a magnetic dipole.
摘要翻译：提供一种触摸屏及其操作方法。触摸屏包括检测部分，控制部分和触觉反馈部分。检测部件检测物体的接近或接触。控制部分接收检测部分的信号以输出反馈信号。触觉反馈部分接收控制部分的反馈信号，以使用磁力向接触位置提供触觉反馈。触觉反馈使用磁偶极子的磁力。

8. 发明申请

US20110133257A1 TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：转印薄膜晶体管及其制造方法
公开(公告)号：US20110133257A1
公开(公告)日：2011-06-09
申请号：US12782303
申请日：2010-05-18
申请人： Jae Bon KOO , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
发明人： Jae Bon KOO , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

9. 发明申请

US20100155684A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：非易失性存储器件及其形成方法
公开(公告)号：US20100155684A1
公开(公告)日：2010-06-24
申请号：US12479640
申请日：2009-06-05
申请人： Sung-Yool CHOI , Hu-Young Jeong , In-Kyu You , Kyoung-Ik Cho
发明人： Sung-Yool CHOI , Hu-Young Jeong , In-Kyu You , Kyoung-Ik Cho
IPC分类号： H01L47/00 , H01L21/20 , H01L29/12
CPC分类号： H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/165
摘要： Provided are a non-volatile memory device and a method of forming the non-volatile memory device. The non-volatile memory device includes a substrate, a lower electrode on the substrate, a diffusion barrier preventing the diffusion of a space charge on the lower electrode, a charge storage layer having a space charge limited characteristic on the diffusion barrier, and an upper electrode on the charge storage layer.
摘要翻译：提供了一种非易失性存储器件和形成非易失性存储器件的方法。非易失性存储器件包括衬底，衬底上的下电极，阻止下电极上的空间电荷的扩散的扩散阻挡层，在扩散阻挡层上具有空间电荷限制特性的电荷存储层，以及上部电极在电荷存储层上。

10. 发明授权

US08378421B2 Method of manufacturing thin film transistor and thin film transistor substrate 有权
标题翻译：制造薄膜晶体管和薄膜晶体管基板的方法
公开(公告)号：US08378421B2
公开(公告)日：2013-02-19
申请号：US13350037
申请日：2012-01-13
申请人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
发明人： Jae Bon Koo , In-Kyu You , Seongdeok Ahn , Kyoung Ik Cho
IPC分类号： H01L27/12
CPC分类号： H01L29/78603 , H01L27/1266 , H01L29/66757 , H01L29/78618
摘要： A thin film transistor substrate. The thin film transistor substrate includes a substrate, an adhesive layer on the substrate, and a semiconductor layer having a first doped region, a second doped region and a channel region on the adhesive layer. The thin film transistor substrate further includes a first dielectric layer on the semiconductor layer, a gate electrode overlapping the channel region, a second dielectric layer on the first dielectric layer and the gate electrode, a source electrode disposed on the second insulating layer, and a drain electrode spaced apart from the source electrode on the source electrode. The channel region is disposed between the first doped region and the second doped region, and has a transmittance higher than those of the first doped region and the second doped region.
摘要翻译：薄膜晶体管基板。薄膜晶体管衬底包括衬底，衬底上的粘合剂层，以及在粘合剂层上具有第一掺杂区域，第二掺杂区域和沟道区域的半导体层。薄膜晶体管基板还包括半导体层上的第一介电层，与沟道区重叠的栅极电极，第一介电层上的第二电介质层和栅极电极，设置在第二绝缘层上的源电极和漏电极与源电极上的源电极间隔开。沟道区域设置在第一掺杂区域和第二掺杂区域之间，并且具有高于第一掺杂区域和第二掺杂区域的透射率的透射率。

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