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    • 5. 发明授权
    • Multilayer ceramic condenser and method for manufacturing the same
    • 多层陶瓷电容器及其制造方法
    • US08804305B2
    • 2014-08-12
    • US13191890
    • 2011-07-27
    • Hyung Joon KimJong Hoon Kim
    • Hyung Joon KimJong Hoon Kim
    • H01G4/06
    • H01G4/1227H01G4/008H01G4/012H01G4/232H01G4/2325H01G4/30Y10T29/435
    • Disclosed are a multilayer ceramic condenser and a method for manufacturing the same. There is provided a multilayer ceramic condenser including: a multilayer main body in which a plurality of dielectric layers including a first side, a second side, a third side, and a fourth side are stacked; a first cover layer and a second cover layer forming the plurality of dielectric layers; a first dielectric layer disposed between the first cover layer and the second cover layer and printed with a first inner electrode pattern drawn to the first side; a second dielectric layer alternately stacked with the first dielectric layer and printed with a second inner electrode pattern drawn to the third side; and a first side portion and a second side portion each formed on the second side and the fourth side opposite to each other.
    • 公开了一种多层陶瓷电容器及其制造方法。 提供了一种多层陶瓷电容器,包括:多层主体,其中堆叠包括第一侧,第二侧,第三侧和第四侧的多个电介质层; 形成所述多个电介质层的第一覆盖层和第二覆盖层; 第一电介质层,设置在第一覆盖层和第二覆盖层之间,并印刷有第一内部电极图案,其被绘制到第一侧; 第二电介质层,与所述第一电介质层交替堆叠并且印刷有第二内部电极图案,所述第二内部电极图案被绘制到所述第三侧; 以及分别形成在彼此相对的第二侧和第四侧上的第一侧部和第二侧部。
    • 9. 发明授权
    • Metal layer structure of semiconductor device
    • 半导体器件的金属层结构
    • US07495340B2
    • 2009-02-24
    • US11646698
    • 2006-12-28
    • Jong Hoon Kim
    • Jong Hoon Kim
    • H01L23/48H01L23/52
    • H01L23/528H01L27/0207H01L27/115H01L2924/0002H01L2924/00
    • A metal layer structure of a semiconductor memory device is disclosed. The metal layer structure includes: a first metal layer to be connected to a contact plug; and a plurality of a second metal layers that are formed in parallel at a second spaced distance around the first metal layer, wherein a spaced distance of the second metal layers nearest the first metal layer maintains the second spaced distance which is wider than a first spaced distance of the second metal layers around the contact plug, and the spaced distance of the second metal layer next to the first metal layer maintains a third spaced distance, which is narrower than the second spaced distance, and the spaced distance between adjacent second metal layers gradually decreases to eventually be equal to the first spaced distance, for the second metal layers farthest from the first metal layer. Accordingly, an alignment margin can be ensured without requiring more area, and the contact plug can be connected to the next metal layer, even if an alignment error is produced.
    • 公开了一种半导体存储器件的金属层结构。 金属层结构包括:要连接到接触插塞的第一金属层; 以及多个第二金属层,所述多个第二金属层以围绕所述第一金属层的第二间隔距离平行地形成,其中所述第二金属层与所述第一金属层最近的间隔距离保持第二间隔距离, 第二金属层围绕接触塞的距离以及与第一金属层相邻的第二金属层的间隔距离保持比第二间隔距离窄的第三间隔距离,并且相邻的第二金属层之间的间隔距离 对于距离第一金属层最远的第二金属层,逐渐减小以最终等于第一间隔距离。 因此,即使产生对准误差,也可以确保对准余量而不需要更多的面积,并且可以将接触插塞连接到下一个金属层。