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    • 1. 发明授权
    • Compressor
    • 压缩机
    • US09556879B2
    • 2017-01-31
    • US13993486
    • 2011-07-21
    • Hitoshi ShinoharaMitsuhiko Ota
    • Hitoshi ShinoharaMitsuhiko Ota
    • F04D29/08F04D17/12F04D29/42
    • F04D29/08F04D17/12F04D29/083F04D29/4206F16J15/48
    • A compressor is provided with a substantially tubular compressor casing, a substantially circular lid that is provided inside an inner periphery of the compressor casing so as to close off an end surface of the compressor casing, a space that is enclosed by the lid and an inner circumferential surface of the compressor casing so as to accommodate a blade, and seal member that is provided in a circumferential direction on the space side of an outer circumferential surface of the lid, wherein a slit part is provided on the lid, radially inside the outer circumferential surface, where the seal member is provided, so as to extend in the axial direction from the space side of the lid.
    • 压缩机设置有基本上管状的压缩机壳体,大致圆形的盖,其设置在压缩机壳体的内周的内侧,以封闭压缩机壳体的端面,被盖封闭的空间和内部 压缩机壳体的周面,以容纳叶片;以及密封构件,其在盖的外周面的空间侧沿圆周方向设置,其中狭缝部设置在盖上,径向地位于外侧 其中所述密封构件设置在所述圆周表面上,以便从所述盖的空间侧在轴向方向上延伸。
    • 2. 发明申请
    • COMPRESSOR
    • 压缩机
    • US20130272853A1
    • 2013-10-17
    • US13993486
    • 2011-07-21
    • Hitoshi ShinoharaMitsuhiko Ota
    • Hitoshi ShinoharaMitsuhiko Ota
    • F04D29/08
    • F04D29/08F04D17/12F04D29/083F04D29/4206F16J15/48
    • A compressor is provided with a substantially tubular compressor casing, a substantially circular lid that is provided inside an inner periphery of the compressor casing so as to close off an end surface of the compressor casing, a space that is enclosed by the lid and an inner circumferential surface of the compressor casing so as to accommodate a blade, and seal member that is provided in a circumferential direction on the space side of an outer circumferential surface of the lid, wherein a slit part is provided on the lid, radially inside the outer circumferential surface, where the seal member is provided, so as to extend in the axial direction from the space side of the lid.
    • 压缩机设置有基本上管状的压缩机壳体,大致圆形的盖,其设置在压缩机壳体的内周的内侧,以封闭压缩机壳体的端面,被盖封闭的空间和内部 压缩机壳体的周面,以容纳叶片;以及密封构件,其在盖的外周面的空间侧沿圆周方向设置,其中狭缝部设置在盖上,径向地位于外侧 其中所述密封构件设置在所述圆周表面上,以便从所述盖的空间侧在轴向方向上延伸。
    • 8. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08482060B2
    • 2013-07-09
    • US13052917
    • 2011-03-21
    • Takeshi UchiharaYusuke KawaguchiKeiko KawamuraHitoshi ShinoharaYosefu Fujiki
    • Takeshi UchiharaYusuke KawaguchiKeiko KawamuraHitoshi ShinoharaYosefu Fujiki
    • H01L29/772
    • H01L29/7813H01L21/823487H01L27/088H01L29/0626H01L29/0696H01L29/0886H01L29/1095H01L29/4238H01L29/66734H01L29/7808
    • According to one embodiment, a semiconductor device includes a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a gate electrode in a trench shape, a contact region of the second conductivity type, a drain electrode, and a source electrode. The drift region is selectively provided in a drain layer of the first conductivity type from a surface of the drain layer to an inside of the drain layer. The base region is selectively provided in the drift region from a surface of the drift region to an inside of the drift region. The source region is selectively provided in the base region from a surface of the base region to an inside of the base region. The gate electrode penetrates from a part of the source region through the base region adjacent to the part of the source region to reach a part of the drift region in a direction substantially parallel to a major surface of the drain layer. The contact region is selectively provided on the surface of the drift region. The contact region contains an impurity having a concentration higher than an impurity concentration of the base region. The drain electrode is connected to the drain layer. The source electrode is connected to the source region and the contact region. The contact region extends from a side of the drain layer toward the drift region and does not contact the drain layer.
    • 根据一个实施例,半导体器件包括第一导电类型的漂移区域,第二导电类型的基极区域,第一导电类型的源极区域,沟槽形状的栅电极,第二导电类型的接触区域 导电类型,漏电极和源电极。 漂移区选择性地设置在第一导电类型的漏极层中,从漏极层的表面到漏极层的内部。 基极区域选择性地设置在漂移区域中,从漂移区域的表面到漂移区域的内部。 源极区域从基极区域的表面到基极区域的内部选择性地设置在基极区域中。 栅极电极从源极区域的一部分穿过与源极区域相邻的基极区域,以在与漏极层的主表面基本平行的方向上到达漂移区域的一部分。 接触区选择性地设置在漂移区的表面上。 接触区域含有浓度高于碱性区域的杂质浓度的杂质。 漏电极连接到漏极层。 源电极连接到源极区域和接触区域。 接触区域从漏极层的侧面朝向漂移区域延伸,并且不接触漏极层。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    • 半导体器件及其制造方法
    • US20120043606A1
    • 2012-02-23
    • US13053452
    • 2011-03-22
    • Shingo SatoHitoshi ShinoharaKeiko Kawamura
    • Shingo SatoHitoshi ShinoharaKeiko Kawamura
    • H01L27/088H01L21/8234
    • H01L29/7825H01L29/0623H01L29/063H01L29/0634H01L29/0886H01L29/4175H01L29/4236H01L29/66704H01L29/7393H01L29/782
    • According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a gate region, a gate insulating film, and an electric field relaxation region. The first semiconductor region includes a first portion and a second portion. The second semiconductor region includes a third portion and a fourth portion. The third semiconductor region includes a fifth portion and a sixth portion. The fourth semiconductor region is adjacent to the sixth portion. The gate region is provided inside a trench made in a second direction orthogonal to the first direction. The gate insulating film is provided between the gate region and an inner wall of the trench. The electric field relaxation region is provided between the third portion and the fifth portion and has an impurity concentration lower than an impurity concentration of the third semiconductor region.
    • 根据一个实施例,半导体器件包括第一半导体区域,第二半导体区域,第三半导体区域,第四半导体区域,栅极区域,栅极绝缘膜和电场弛豫区域。 第一半导体区域包括第一部分和第二部分。 第二半导体区域包括第三部分和第四部分。 第三半导体区域包括第五部分和第六部分。 第四半导体区域与第六部分相邻。 栅极区域设置在与第一方向正交的第二方向上形成的沟槽内。 栅极绝缘膜设置在栅极区域和沟槽的内壁之间。 电场弛豫区设置在第三部分和第五部分之间,其杂质浓度低于第三半导体区域的杂质浓度。