专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100055347A1 ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD 有权
标题翻译：活性气体注射器，膜沉积装置和膜沉积方法
公开(公告)号：US20100055347A1
公开(公告)日：2010-03-04
申请号：US12547648
申请日：2009-08-26
申请人： HITOSHI KATO , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

2. 发明授权

US09053909B2 Activated gas injector, film deposition apparatus, and film deposition method 有权
标题翻译：活性气体注入器，成膜装置和成膜方法
公开(公告)号：US09053909B2
公开(公告)日：2015-06-09
申请号：US12547648
申请日：2009-08-26
申请人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , H01J37/32 , C23C16/455 , C23C16/452 , C23C16/458 , C23C16/06 , C23C16/22 , H01J1/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

3. 发明申请

US20110039026A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20110039026A1
公开(公告)日：2011-02-17
申请号：US12852545
申请日：2010-08-09
申请人： Hitoshi Kato , Hiroyuki Kikuchi , Shigehiro Ushikubo
发明人： Hitoshi Kato , Hiroyuki Kikuchi , Shigehiro Ushikubo
IPC分类号： C23C14/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/402 , C23C16/45536
摘要： A silicon oxide film is deposited by rotating a rotation table on which a wafer W is placed to allow BTBAS gas to be adsorbed on an upper surface of the wafer W and supply a O3 gas to the upper surface of the wafer W for allowing the BTBAS gas adsorbed on the upper surface of the wafer W to react. After depositing the silicon oxide film, a reforming process is performed every deposition cycle by supplying a plasma of Ar gas to the silicon oxide film on the wafer from an activated gas injector.
摘要翻译：通过旋转放置晶片W的旋转台来沉积氧化硅膜，以允许BTBAS气体吸附在晶片W的上表面上，并将O 3气体供应到晶片W的上表面，以允许BTBAS 吸附在晶片W的上表面上的气体反应。在沉积氧化硅膜之后，通过从活化气体注入器向晶片上的氧化硅膜提供Ar气体的等离子体，进行每个沉积循环的重整过程。

4. 发明授权

US09932674B2 Film deposition apparatus, film deposition method, and computer-readable recording medium 有权
公开(公告)号：US09932674B2
公开(公告)日：2018-04-03
申请号：US13467324
申请日：2012-05-09
申请人： Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
发明人： Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
IPC分类号： C23C16/00 , H01L21/306 , C23C16/54 , H01J37/32 , C23C16/455
CPC分类号： C23C16/54 , C23C16/4554 , H01J37/321
摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

5. 发明申请

US20110155057A1 PLASMA PROCESS APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20110155057A1
公开(公告)日：2011-06-30
申请号：US12975355
申请日：2010-12-22
申请人： Hitoshi KATO , Tatsuya Tamura , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi KATO , Tatsuya Tamura , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/44 , C23C16/505
CPC分类号： H01L21/68764 , C23C16/45519 , C23C16/4554 , C23C16/45551 , C23C16/45578 , C23C16/45591 , C23C16/4584 , C23C16/509 , H01J37/32082 , H01J37/32733 , H01J37/32752 , H01L21/68771
摘要： A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber.
摘要翻译：一种等离子体处理装置，用于通过使用等离子体处理基板，所述等离子体包括执行基板的处理的真空室，真空室内的转台，具有至少一个基板接收区域的转台，旋转转台的旋转机构，向基板接收区域供给等离子体产生气体的气体供给部，将等离子体产生气体离子化的主等离子体产生部设置在与基板容纳区域的通过区域相反的位置，并且从棒状状延伸转盘的中心部分到转盘的外周部分，辅助等离子体产生部件补偿主等离子体产生部件的等离子体不足，辅助等离子体产生部件在真空的圆周方向与主等离子体产生部件分离并且抽真空部分抽真空室。

6. 发明授权

US08642487B2 Film deposition method and film deposition apparatus 有权
标题翻译：膜沉积法和成膜装置
公开(公告)号：US08642487B2
公开(公告)日：2014-02-04
申请号：US13471587
申请日：2012-05-15
申请人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/4554 , H01J37/321 , H01J37/32449 , H01J37/32715 , H01J37/32733 , H01J37/32779 , H01L21/02164 , H01L21/0228
摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.
摘要翻译：一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到反应产物。

7. 发明申请

US20130149467A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读记录介质
公开(公告)号：US20130149467A1
公开(公告)日：2013-06-13
申请号：US13467324
申请日：2012-05-09
申请人： Hitoshi KATO , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
发明人： Hitoshi KATO , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
IPC分类号： C23C16/54
CPC分类号： C23C16/54 , C23C16/4554 , H01J37/321
摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.
摘要翻译：一种成膜装置包括：第一和第二气体依次供给多次的真空室，包括具有接收区域的第一表面和旋转真空室内部的接收区域的旋转台，第一部分供应第一气体在第一区域中，第二部分经由分离区域将第二气体供给到沿着旋转台的周向方向与第一区域分离的第二区域;等离子体气体部分，其将等离子体产生气体供应到真空中的等离子体区域中天线，面向旋转台的第一表面的天线，并通过电感耦合从等离子体空间内的等离子体产生气体产生等离子体，并且法拉第屏蔽层接地并设置在天线和等离子体空间之间，并且包括在方向垂直于天线相交。

8. 发明授权

US09062373B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09062373B2
公开(公告)日：2015-06-23
申请号：US13571546
申请日：2012-08-10
申请人： Hitoshi Kato , Shigehiro Ushikubo , Katsuyuki Hishiya
发明人： Hitoshi Kato , Shigehiro Ushikubo , Katsuyuki Hishiya
IPC分类号： C23C16/44 , C23C16/455 , H01L21/02
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45578 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area.
摘要翻译：一种成膜装置，包括在圆周方向上包括多个基板放置区域的转盘; 气体喷嘴，其设置成从所述基板放置区域的内边缘延伸到外边缘; 气体排出口，其设置在所述转台的外缘的外侧，并且相对于所述气体喷嘴排出所述转台，在所述转台的旋转方向的下游; 以及调节构件，其包括设置在所述气体喷嘴和所述气体排出口之间的壁部，用于至少在所述基板放置区域的内缘与外缘之间的部分处隔开所述气体喷嘴和所述排气口，同时具有空间当基板被放置在基板放置区域上时，从基板放置区域的内边缘延伸到外边缘。

9. 发明授权

US09453280B2 Film deposition apparatus, film deposition method and storage medium 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和存储介质
公开(公告)号：US09453280B2
公开(公告)日：2016-09-27
申请号：US13602587
申请日：2012-09-04
申请人： Hitoshi Kato , Katsuyuki Hishiya , Shigehiro Ushikubo
发明人： Hitoshi Kato , Katsuyuki Hishiya , Shigehiro Ushikubo
IPC分类号： H01L21/306 , C23C16/00 , C23C16/455 , H01J37/32 , C23C16/34
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/45551 , H01J37/321 , H01J37/32733
摘要： A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate.
摘要翻译：一种成膜装置，包括具有基板安装区域的转台，第一等离子体气体供给部，第二等离子体供给部，将第一等离子体产生气体转换为第一等离子体的第一等离子体气体发生部，以及第二等离子体产生部，在圆周方向上离开第一等离子体产生部分并将第二等离子体产生气体转换成第二等离子体。第一等离子体产生部件包括面向转盘的天线，以将第一等离子体产生气体转换成第一等离子体，以及天线与执行等离子体处理的区域之间的接地法拉第屏蔽，并且包括分别延伸的多个狭缝在垂直于天线的方向上并沿着天线延伸方向布置，以防止电场通向衬底并使磁场朝向衬底。

10. 发明申请

US20130042813A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20130042813A1
公开(公告)日：2013-02-21
申请号：US13571546
申请日：2012-08-10
申请人： Hitoshi KATO , Shigehiro Ushikubo , Katsuyuki Hishiya
发明人： Hitoshi KATO , Shigehiro Ushikubo , Katsuyuki Hishiya
IPC分类号： C23C16/458
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45578 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area.
摘要翻译：一种成膜装置，包括在圆周方向上包括多个基板放置区域的转盘; 气体喷嘴，其设置成从所述基板放置区域的内边缘延伸到外边缘; 气体排出口，其设置在所述转台的外缘的外侧，并且相对于所述气体喷嘴排出所述转台，在所述转台的旋转方向的下游; 以及调节构件，其包括设置在所述气体喷嘴和所述气体排出口之间的壁部，用于至少在所述基板放置区域的内缘与外缘之间的部分处隔开所述气体喷嘴和所述排气口，同时具有空间当基板被放置在基板放置区域上时，从基板放置区域的内边缘延伸到外边缘。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式