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1. 发明申请

US20080003708A1 Method of processing sapphire substrate 审中-公开
标题翻译：处理蓝宝石衬底的方法
公开(公告)号：US20080003708A1
公开(公告)日：2008-01-03
申请号：US11819673
申请日：2007-06-28
申请人： Hitoshi Hoshino , Koji Yamaguchi , Kenji Furuta , Hiroshi Morikazu , Ryugo Oba , Yukio Morishige
发明人： Hitoshi Hoshino , Koji Yamaguchi , Kenji Furuta , Hiroshi Morikazu , Ryugo Oba , Yukio Morishige
IPC分类号： H01L21/30
CPC分类号： H01L33/0095 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011
摘要： To provide a method of processing a sapphire substrate, where reduction in luminance of light emitting devices can be suppressed if a sapphire substrate is divided into individual light emitting devices by irradiation of a laser beam, a pulsed laser beam having a small pulse energy of 0.6 μJ to 10 μJ, and an extremely small pulse width in a range of femto-second is irradiated to the sapphire substrate while a condensing point is positioned within each of regions corresponding to predetermined division lines on the sapphire substrate so that affected zones are formed, thereby the laser beam can be irradiated even at a high peak power density of 4×1013 W/cm2 to 5×1015 W/cm2, consequently each of the affected zones can be formed at only a desired condensing point within the sapphire substrate, and necessary processing can be performed while damage to nitride semiconductors or the sapphire substrate is minimized.
摘要翻译：为了提供一种处理蓝宝石衬底的方法，其中如果通过激光束的照射将蓝宝石衬底分成单独的发光器件，则可以抑制发光器件的亮度降低，脉冲能量为0.6的脉冲激光束在蓝宝石衬底上照射到毫微微秒范围内的非常小的脉冲宽度，同时聚光点位于与蓝宝石衬底上的预定划分线对应的每个区域内，形成影响区域，从而激光束即使在4×10 13 W / cm 2至高达5×10 15 W / cm 2的高峰值功率密度下也能够照射 > 2 ，因此每个受影响的区域可以仅形成在蓝宝石衬底内的期望的凝聚点处，并且可以执行必要的处理，同时对氮化物半导体或蓝宝石衬底的损伤最小化。

2. 发明申请

US20080047408A1 Wafer dividing method 审中-公开
标题翻译：晶圆分割法
公开(公告)号：US20080047408A1
公开(公告)日：2008-02-28
申请号：US11892150
申请日：2007-08-20
申请人： Ryugo Oba , Hiroshi Morikazu , Kenji Furuta , Yohei Yamashita
发明人： Ryugo Oba , Hiroshi Morikazu , Kenji Furuta , Yohei Yamashita
IPC分类号： B26D3/00
CPC分类号： H01L21/78 , Y10T83/0524
摘要： A method of dividing a wafer having devices in areas sectioned by lattice pattern-like streets on the front surface and a metal layer formed on the rear surface along the streets, comprising the steps of cutting the wafer with a cutting blade from the front surface side along the streets to form a cut groove, leaving behind a remaining portion having a predetermined thickness from the rear surface; and applying a laser beam along the cut groove formed by the above cut groove forming step to cut the remaining portion and the metal layer.
摘要翻译：一种在前表面上由格子状街道划分的区域中的装置分割晶片的方法以及沿着街道形成在后表面上的金属层的方法，包括以下步骤：从前表面侧切割晶片沿着街道形成切割槽，从后表面留出具有预定厚度的剩余部分; 以及沿着由上述切槽形成步骤形成的切割槽施加激光束以切割剩余部分和金属层。

3. 发明授权

US07396780B2 Method for laser processing of wafer 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US07396780B2
公开(公告)日：2008-07-08
申请号：US11261600
申请日：2005-10-31
申请人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
发明人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
IPC分类号： H01L21/324
CPC分类号： H01L21/67092 , B23K26/0853 , B23K26/702
摘要： A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
摘要翻译：一种利用激光束处理机进行激光加工的方法，所述激光束处理机包括用于保持晶片的卡盘台，激光束施加装置，用于将激光束施加到保持在卡盘台上的晶片上，以及加工进给装置用于将夹盘和激光束施加装置相对于彼此进行加工，包括以下步骤：将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤，用于保持晶片放在卡盘台上的保护带上，以及激光束施加步骤，用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上，馈送装置，其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。

4. 发明申请

US20060094260A1 Method for laser processing of wafer 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US20060094260A1
公开(公告)日：2006-05-04
申请号：US11261600
申请日：2005-10-31
申请人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
发明人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
IPC分类号： H01L21/324
CPC分类号： H01L21/67092 , B23K26/0853 , B23K26/702
摘要： A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
摘要翻译：一种利用激光束处理机进行激光加工的方法，所述激光束处理机包括用于保持晶片的卡盘台，激光束施加装置，用于将激光束施加到保持在卡盘台上的晶片上，以及加工进给装置用于将夹盘和激光束施加装置相对于彼此进行加工，包括以下步骤：将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤，用于保持晶片放在卡盘台上的保护带上，以及激光束施加步骤，用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上，馈送装置，其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。

5. 发明申请

US20060255022A1 Wafer laser processing method and laser beam processing machine 审中-公开
标题翻译：晶圆激光加工方法和激光束加工机
公开(公告)号：US20060255022A1
公开(公告)日：2006-11-16
申请号：US11413594
申请日：2006-04-28
申请人： Hitoshi Hoshino , Kenji Furuta , Ryugo Oba
发明人： Hitoshi Hoshino , Kenji Furuta , Ryugo Oba
IPC分类号： B23K26/38
CPC分类号： B23K26/0876 , B23K26/0622 , B23K26/066 , B23K26/0732 , B23K26/0736 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A wafer laser processing method for forming a groove by applying a pulse laser beam to the back surface of a wafer comprising light emitting elements which are formed in a plurality of areas sectioned by a plurality of dividing lines on the front surface of a sapphire substrate, along the dividing lines, wherein an energy density of a focal spot of the pulse laser beam is set to 1 J/cm2 or more.
摘要翻译：一种用于通过将脉冲激光束施加到晶片的背面的晶片激光加工方法，所述晶片包括发光元件，所述发光元件形成在由蓝宝石衬底的前表面上的多个划分线分割的多个区域中，沿着分割线，其中脉冲激光束的焦斑的能量密度设定为1J / cm 2以上。

6. 发明申请

US20060035411A1 Laser processing method 审中-公开
标题翻译：激光加工方法
公开(公告)号：US20060035411A1
公开(公告)日：2006-02-16
申请号：US11200142
申请日：2005-08-10
申请人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
发明人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
IPC分类号： H01L21/50
CPC分类号： H01L21/78 , B23K26/0622 , B23K26/0736 , B23K26/364 , B23K26/40 , B23K2103/50
摘要： A laser processing method for forming a laser groove along dividing lines by applying a pulse laser beam along the dividing lines formed on a workpiece, the method comprising the steps of forming the focusing spot of the pulse laser beam in a shape of oval, positioning the long axis of the oval focusing spot along each of the dividing lines, and moving the focusing spot and the workpiece along the dividing line relative to each other.
摘要翻译：一种激光加工方法，通过沿着形成在工件上的分割线施加脉冲激光束沿着分割线形成激光槽，该方法包括以下步骤：将脉冲激光束的聚焦点形成为椭圆形，沿着每条分割线的椭圆形聚焦点的长轴，并且使聚焦点和工件沿分割线相对于彼此移动。

7. 发明申请

US20060148210A1 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US20060148210A1
公开(公告)日：2006-07-06
申请号：US11324327
申请日：2006-01-04
申请人： Kenji Furuta , Ryugo Oba
发明人： Kenji Furuta , Ryugo Oba
IPC分类号： H01L21/78
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K26/364 , B23K2101/40 , H01L21/78
摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the condenser of the laser beam application means comprises a first prism for dividing the laser beam oscillated from the laser beam oscillation means into a first laser beam and a second laser beam both having a semicircular section and interchanging the first laser beam and the second laser beam, a second prism for correcting the optical paths of the first laser beam and the second laser beam formed by the first prism to become parallel each other, and an image forming lens for forming respective spots of the first laser beam and the second laser beam whose optical paths have been corrected to be parallel each other by the second prism, into images of spots having linear portions on the outer sides and arcuate portions on the inner sides.
摘要翻译：一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置其中激光束施加装置的冷凝器包括用于将从激光束振荡装置振荡的激光束分成第一激光束的第一棱镜和具有半圆形部分并且将第一激光器交换的第二激光束光束和第二激光束，第二棱镜，用于校正第一激光束的光路和由第一棱镜形成的第二激光束彼此平行;以及成像透镜，用于形成第一激光束的各个点并且其光路已被校正为由第二棱镜彼此平行的第二激光束成为在t上具有线性部分的点的图像他的外侧和内侧的弓形部分。

8. 发明授权

US07482554B2 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US07482554B2
公开(公告)日：2009-01-27
申请号：US11324327
申请日：2006-01-04
申请人： Kenji Furuta , Ryugo Oba
发明人： Kenji Furuta , Ryugo Oba
IPC分类号： B23K26/06 , B23K26/38 , H01L21/78
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/066 , B23K26/067 , B23K26/0732 , B23K26/364 , B23K2101/40 , H01L21/78
摘要： A laser beam processing machine including a chuck table for holding a workpiece, a laser beam application device for applying a laser beam to the workpiece held on the chuck table, and a processing-feed mechanism for moving the chuck table and the laser beam application device relative to each other. The condenser of the laser beam application device includes a first prism for dividing the laser beam oscillated from the laser beam oscillation mechanism into a first laser beam and a second laser beam, and a second prism for correcting optical paths of the first laser beam and the second laser beam so they become parallel to each other. An image forming lens forms respective spots of the first laser beam and the second laser beam whose optical paths have been corrected to be parallel to each other by the second prism, into images of spots having linear portions on the outer sides and arcuate portions on the inner sides.
摘要翻译：一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到夹持在卡盘台上的工件的激光束施加装置，以及用于使卡盘台和激光束施加装置移动的加工进给机构相对于彼此。激光束施加装置的冷凝器包括用于将从激光束振荡机构振荡的激光束分割为第一激光束和第二激光束的第一棱镜和用于校正第一激光束的光路的第二棱镜和第二激光束使它们彼此平行。图像形成透镜通过第二棱镜形成第一激光束和光路已被校正为彼此平行的第二激光束的各个点，并将其形成在外侧具有直线部分的点的图像和内侧。

9. 发明授权

US07179723B2 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US07179723B2
公开(公告)日：2007-02-20
申请号：US10986371
申请日：2004-11-12
申请人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
发明人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , B23K26/18 , B23K26/364 , H01L21/67092
摘要： A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
摘要翻译：一种用于通过将激光束施加到预定区域来处理晶片的激光束处理方法，包括以下步骤：在晶片的待处理表面上形成吸收激光束的树脂膜; 通过树脂膜将激光束施加到待加工晶片的表面; 并且在激光束施加步骤之后去除树脂膜。

10. 发明申请

US20050106782A1 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US20050106782A1
公开(公告)日：2005-05-19
申请号：US10986371
申请日：2004-11-12
申请人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
发明人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
IPC分类号： B23K26/00 , B23K26/18 , B23K26/40 , B23K101/40 , H01L21/00 , H01L21/301 , H01L21/44 , H01L21/78
CPC分类号： H01L21/78 , B23K26/18 , B23K26/364 , H01L21/67092
摘要： A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
摘要翻译：一种用于通过将激光束施加到预定区域来处理晶片的激光束处理方法，包括以下步骤：在晶片的待处理表面上形成吸收激光束的树脂膜; 通过树脂膜将激光束施加到待加工晶片的表面; 并且在激光束施加步骤之后去除树脂膜。

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