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1. 发明申请

US20110042362A1 LASER BEAM PROCESSING MACHINE 有权
标题翻译：激光加工机
公开(公告)号：US20110042362A1
公开(公告)日：2011-02-24
申请号：US12853797
申请日：2010-08-10
申请人： Jun Maehara , Yukio Morishige
发明人： Jun Maehara , Yukio Morishige
IPC分类号： B23K26/00
CPC分类号： B23K26/146 , B23K26/142
摘要： A laser beam processing machine is provided which includes a laser beam irradiation unit including a laser beam oscillation unit and a processing head provided with a condenser lens condensing a laser beam oscillated from the laser beam oscillation unit. The processing head includes a liquid column forming mechanism provided with a jet nozzle adapted to jet liquid along an optical path for the laser beam condensed by the condenser lens, and a water droplet suction mechanism disposed below the liquid column forming mechanism and provided with an insertion passage through which a liquid column jetted from the jet nozzle is passed and with an annular suction port formed to surround the insertion passage and communicate with suction means.
摘要翻译：提供一种激光束处理机，其包括：激光束照射单元，包括激光束振荡单元;以及处理头，该激光束照射单元设置有聚焦从激光束振荡单元振荡的激光束的聚光透镜。处理头包括液柱形成机构，该液柱形成机构设置有用于沿着用于由聚光透镜冷凝的激光束的光路喷射液体的喷嘴;以及设置在液柱形成机构下方的水滴吸引机构，从喷嘴喷射出的液柱经过该通道，并且形成有围绕插入通道并与抽吸装置连通的环形抽吸口。

2. 发明授权

US07713845B2 Laser processing method for wafer 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US07713845B2
公开(公告)日：2010-05-11
申请号：US11901774
申请日：2007-09-19
申请人： Yukio Morishige , Kenji Asano , Yohei Yamashita
发明人： Yukio Morishige , Kenji Asano , Yohei Yamashita
IPC分类号： H01L21/00
CPC分类号： H01L21/6715 , B23K26/0006 , B23K26/009 , B23K26/1224 , B23K26/18 , B23K26/364 , B23K26/40 , B23K2103/172 , B23K2103/42 , B23K2103/50
摘要： A laser processing method for a wafer such that a laser beam is applied to a work surface of the wafer along a separation line formed on the work surface to thereby form a laser processed groove along the separation line on the work surface by ablation. The laser processing method includes a protective material coating step for coating the work surface of the wafer with a liquid protective material mainly containing a water-soluble silicone oil and a laser processed groove forming step for applying the laser beam to the work surface coated with the protective material along the separation line in the condition that the protective material has fluidity, thereby forming the laser processed groove along the separation line.
摘要翻译：一种用于晶片的激光加工方法，使得激光束沿着形成在工作表面上的分离线施加到晶片的工作表面，从而通过烧蚀在工作表面上沿分离线形成激光加工槽。激光加工方法包括用主要含有水溶性硅油的液体保护材料涂覆晶片的工作面的保护材料涂布工序和激光加工槽形成步骤，用于将激光束施加到涂覆有在保护材料具有流动性的条件下沿着分离线的保护材料，从而沿分离线形成激光加工槽。

3. 发明授权

US07179722B2 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US07179722B2
公开(公告)日：2007-02-20
申请号：US11047619
申请日：2005-02-02
申请人： Masahiro Murata , Yusuke Nagai , Yukio Morishige , Satoshi Kobayashi , Naoki Ohmiya
发明人： Masahiro Murata , Yusuke Nagai , Yukio Morishige , Satoshi Kobayashi , Naoki Ohmiya
IPC分类号： H01L21/301
CPC分类号： H01L21/3043 , H01L21/30625 , H01L21/78 , H01L2221/68336
摘要： A method of dividing, along dividing lines, a wafer having function elements formed in areas sectioned by the dividing lines formed in a lattice pattern on the front surface, which comprises: a protective member affixing step for affixing a protective member to the front surface of the wafer; a polishing step for polishing the back surface of the wafer having the protective member affixed to the front surface; a deteriorated layer formation step for forming a deteriorated layer along the dividing lines in the inside of the wafer by applying a pulse laser beam capable of passing through the wafer to the wafer along the dividing lines from the polished back surface side of the wafer; a frame holding step for affixing the back surface of the wafer in which the deteriorated layers have been formed along the dividing lines, to a dicing tape mounted on an annular frame; a dividing step for dividing the wafer into individual chips along the dividing lines by exerting external force along the dividing lines where the deteriorated layers have been formed, of the wafer held on the frame; an expansion step for enlarging the interval between chips by stretching the dicing tape affixed to the wafer divided into individual chips; and a pick up step for picking up the chips from the stretched dicing tape.
摘要翻译：沿着划分线划分具有由在前表面上形成为格子图案的分割线划分的区域中形成的功能元件的晶片的方法，该方法包括：保护构件固定步骤，用于将保护构件固定到晶圆; 抛光步骤，用于抛光具有固定到前表面的保护构件的晶片的背面; 劣化层形成步骤，通过沿晶片的抛光后表面侧沿分割线施加能够穿过晶片的脉冲激光束，沿着晶片内部的分割线形成劣化层; 用于将已经形成有劣化层的晶片的背面沿分割线固定到安装在环形框架上的切割带的框架保持步骤; 分割步骤，通过沿保持在框架上的晶片沿已经形成有劣化层的划分线施加外力沿分割线将晶片分割成单个芯片; 扩展步骤，用于通过拉伸固定到划分成单个芯片的晶片上的切割带来扩大芯片之间的间隔; 以及从拉伸的切割胶带拾取芯片的拾取步骤。

4. 发明申请

US20070023691A1 Laser processing apparatus 有权
标题翻译：激光加工设备
公开(公告)号：US20070023691A1
公开(公告)日：2007-02-01
申请号：US11483614
申请日：2006-07-11
申请人： Yukio Morishige , Hiroshi Morikazu , Toshio Tsuchiya , Koichi Takeyama
发明人： Yukio Morishige , Hiroshi Morikazu , Toshio Tsuchiya , Koichi Takeyama
IPC分类号： H01S3/00
CPC分类号： B23K26/364 , B23K26/0613 , B23K26/083 , B23K26/40 , B23K2101/40 , B23K2103/172
摘要： A laser processing apparatus comprising a chuck table, laser beam irradiation means for irradiating a workpiece held on the chuck table with a laser beam, and processing feed means for processing-feeding the chuck table and the laser beam irradiation means relative to each other. The laser beam irradiation means includes first laser beam irradiation means for throwing a first pulsed laser beam having a wavelength in the intermediate-infrared radiation region, and second laser beam irradiation means for throwing a second pulsed laser beam having a wavelength in the ultraviolet radiation region. The first laser beam irradiation means and the second laser beam irradiation means are set such that at least a part, in the processing feed direction, of the focus spot of the second pulsed laser beam overlaps the focus spot of the first pulsed laser beam.
摘要翻译：一种激光加工装置，包括：卡盘台，用激光束照射夹持台上的工件的激光束照射装置，以及用于相对于彼此加工卡盘台和激光束照射装置的加工进给装置。激光束照射装置包括用于投射在中红外辐射区域具有波长的第一脉冲激光束的第一激光束照射装置和用于投射在紫外线辐射区域中具有波长的第二脉冲激光束的第二激光束照射装置。第一激光束照射装置和第二激光束照射装置被设置为使得第二脉冲激光束的聚焦点的处理进给方向中的至少一部分与第一脉冲激光束的聚焦点重叠。

5. 发明申请

US20050109742A1 Processing method using laser beam 审中-公开
标题翻译：使用激光束的加工方法
公开(公告)号：US20050109742A1
公开(公告)日：2005-05-26
申请号：US10972658
申请日：2004-10-26
申请人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige
发明人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige
IPC分类号： B23K26/04 , B23K26/02 , B23K26/08 , B23K101/40 , H01L21/301 , B23K26/06
CPC分类号： B23K26/02 , B23K26/042 , B23K26/0853 , B23K2101/40
摘要： A processing method using a laser beam, which can locate the focus point of a laser beam (82), sufficiently easily and promptly, at a position of a predetermined depth (D) below the face of a workpiece (34). The spacing between a focusing optical system (78) and the face of the workpiece when the laser beam is focused onto the face of the workpiece is adopted as a reference spacing (BL), and the spacing (SL) between the focusing optical system and the face of the workpiece is set based on a set equation taking into consideration the numerical aperture of the focusing optical system and the refractive index of the workpiece in combination with the reference spacing (BL).
摘要翻译：一种使用激光束的处理方法，其可以在工件（34）的表面下方的预定深度（D）的位置处足够容易且及时地定位激光束（82）的聚焦点。采用激光束聚焦到工件表面上时聚焦光学系统（78）和工件表面之间的间距作为参考间距（BL），聚焦光学系统和考虑到聚焦光学系统的数值孔径和工件的折射率与参考间距（BL）的组合，基于设定的方程来设定工件的面。

6. 发明申请

US20050095817A1 Silicon wafer dividing method and apparatus 有权
标题翻译：硅晶片分割方法及装置
公开(公告)号：US20050095817A1
公开(公告)日：2005-05-05
申请号：US10978005
申请日：2004-11-01
申请人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige
发明人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige
IPC分类号： B23K26/00 , B23K26/40 , B23K101/40 , H01L21/301 , H01L21/304 , H01L21/78 , G03F9/00 , H01L21/46
CPC分类号： H01L21/3043 , H01L21/78
摘要： A method of dividing a silicon wafer along predetermined dividing lines, comprising a deteriorated layer forming step for forming deteriorated layers exposed to at least a surface to which a laser beam is applied, from the inside of the silicon wafer by applying a pulse laser beam with a wavelength capable of passing through the silicon wafer to the silicon wafer along the dividing lines; and a dividing step for dividing the silicon wafer along the dividing lines by applying a laser beam having absorptivity for the silicon wafer to the silicon wafer along the dividing lines where the deteriorated layers have been formed, from the side to which the deteriorated layers have been exposed, to generate thermal stress along the dividing lines.
摘要翻译：一种沿预定分割线分割硅晶片的方法，包括：通过施加脉冲激光束，从硅晶片的内部形成用于形成暴露于至少一个激光束表面的恶化层的恶化层形成步骤能够沿着分界线通过硅晶片到硅晶片的波长; 以及分割步骤，用于沿着分割线分割硅晶片，沿着已经形成劣化层的分界线，从劣化层已经形成了具有硅晶片吸收性的激光束到硅晶片暴露，沿分界线产生热应力。

7. 发明授权

US4711790A Optical CVD method with a strong optical intensity used during an initial period and device therefor 失效
标题翻译：在初始阶段使用强光强度的光CVD方法及其装置
公开(公告)号：US4711790A
公开(公告)日：1987-12-08
申请号：US886125
申请日：1986-07-16
申请人： Yukio Morishige
发明人： Yukio Morishige
IPC分类号： C23C16/48 , B05D3/06
CPC分类号： C23C16/483
摘要： In an optical system (19) of an optical CVD device, a variable optical attenuator (25) for a pulsed optical beam is controlled in two steps by a control unit (28) to make the optical beam have an optical intensity at a predetermined area of a substrate (11) in a first intensity range and then in a second intensity range which is an intensity range ordinarily used in depositing a CVD film on the predetermined area. The first intensity range should be very high to clean the substrate at the predetermined area without damages to the substrate. When the CVD film should be deposited to a thickness of one micron or thicker, the optical intensity is preferably varied to a third intensity range after the CVD film grows so that a peak temperature of the CVD film falls as a result of an increase in the heat capacity of the CVD film being grown. The third intensity range should be higher than the second intensity range and lower than an intensity at which the CVD film evaporates while being grown. Summarizing, the optical intensity is controlled during deposition of the CVD film to a range determined by the thickness of the CVD film being grown.
摘要翻译：在光学CVD装置的光学系统（19）中，用于脉冲光束的可变光衰减器（25）由控制单元（28）分两级控制，以使光束在预定区域具有光强度在第一强度范围内，然后在第二强度范围内的衬底（11），其是通常用于在预定区域上沉积CVD膜的强度范围。第一强度范围应该非常高以在预定区域清洁衬底而不损坏衬底。当CVD膜应沉积到一微米或更厚的厚度时，在CVD膜生长之后光学强度优选地变化到第三强度范围，使得CVD膜的峰值温度由于生长CVD膜的热容量。第三强度范围应高于第二强度范围，并且低于CVD膜在生长时蒸发的强度。总而言之，在将CVD膜沉积到由生长的CVD膜的厚度确定的范围内控制光强度。

8. 发明授权

US08263900B2 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US08263900B2
公开(公告)日：2012-09-11
申请号：US12853797
申请日：2010-08-10
申请人： Jun Maehara , Yukio Morishige
发明人： Jun Maehara , Yukio Morishige
IPC分类号： B23K26/00
CPC分类号： B23K26/146 , B23K26/142
摘要： A laser beam processing machine is provided which includes a laser beam irradiation unit including a laser beam oscillation unit and a processing head provided with a condenser lens condensing a laser beam oscillated from the laser beam oscillation unit. The processing head includes a liquid column forming mechanism provided with a jet nozzle adapted to jet liquid along an optical path for the laser beam condensed by the condenser lens, and a water droplet suction mechanism disposed below the liquid column forming mechanism and provided with an insertion passage through which a liquid column jetted from the jet nozzle is passed and with an annular suction port formed to surround the insertion passage and communicate with suction means.
摘要翻译：提供一种激光束处理机，其包括：激光束照射单元，包括激光束振荡单元;以及处理头，该激光束照射单元设置有聚焦从激光束振荡单元振荡的激光束的聚光透镜。处理头包括液柱形成机构，该液柱形成机构设置有用于沿着用于由聚光透镜冷凝的激光束的光路喷射液体的喷嘴;以及设置在液柱形成机构下方的水滴吸引机构，从喷嘴喷射出的液柱经过该通道，并且形成有围绕插入通道并与抽吸装置连通的环形抽吸口。

9. 发明授权

US07642485B2 Laser beam processing machine 有权
标题翻译：激光束加工机
公开(公告)号：US07642485B2
公开(公告)日：2010-01-05
申请号：US11338761
申请日：2006-01-25
申请人： Noboru Takeda , Hiroshi Morikazu , Satoshi Genda , Yukio Morishige
发明人： Noboru Takeda , Hiroshi Morikazu , Satoshi Genda , Yukio Morishige
IPC分类号： B23K26/02
CPC分类号： B23K37/0235 , B23K26/0622 , B23K26/0853 , B23K26/0876 , B23K26/40 , B23K37/0408 , B23K37/0435 , B23K2103/172 , B23K2103/50
摘要： A laser beam processing machine comprising a chuck table for holding a workpiece, a laser beam application means for applying a laser beam to the workpiece held on the chuck table, and a processing-feed means for moving the chuck table and the laser beam application means relative to each other, wherein the chuck table comprises a body and a workpiece holding member disposed on the top surface of the body, and the workpiece holding member is made of a material which transmits a laser beam having a predetermined wavelength.
摘要翻译：一种激光束处理机，包括用于保持工件的卡盘台，用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，以及用于移动卡盘台和激光束施加装置的加工进给装置相对于彼此，其中所述卡盘台包括主体和设置在所述主体的顶表面上的工件保持构件，并且所述工件保持构件由透射具有预定波长的激光束的材料制成。

10. 发明授权

US07585751B2 Wafer dividing method using laser beam with an annular spot 有权
标题翻译：使用激光束与环形点的晶圆分割方法
公开(公告)号：US07585751B2
公开(公告)日：2009-09-08
申请号：US12140914
申请日：2008-06-17
申请人： Naotoshi Kirihara , Koji Yamaguchi , Yukio Morishige
发明人： Naotoshi Kirihara , Koji Yamaguchi , Yukio Morishige
IPC分类号： H01L21/304
CPC分类号： H01L21/78
摘要： In a wafer dividing method of dividing a wafer into individual devices, the wafer being sectioned by streets to form the devices each made of a laminated body in which an insulating film and a function film are laminated on a front surface of a semiconductor substrate, the method includes a laser processing groove forming step for forming a laser processing groove on the laminated body so as to reach the semiconductor substrate by applying a laser beam formed with an annular spot to the laminated body side of the wafer along the street, the annular spot having an outer diameter larger than a width of a cutting blade and smaller than a width of the street; and a cutting step for allowing a cutting blade to cut the semiconductor substrate of the semiconductor wafer along the laser processing groove formed at the street.
摘要翻译：在将晶片分割为各个装置的晶片分割方法中，晶片被街道划分以形成由半导体衬底的前表面上层叠有绝缘膜和功能膜的层叠体构成的器件，方法包括激光处理槽形成步骤，用于在层叠体上形成激光加工槽，以便通过沿着街道向晶片的层叠体侧施加形成有环形斑点的激光束到达半导体基板，环形点其外径大于切割刀片的宽度并且小于所述街道的宽度; 以及切割步骤，用于允许切割刀沿着形成在街道处的激光加工槽切割半导体晶片的半导体衬底。

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