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1. 发明授权

US07396780B2 Method for laser processing of wafer 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US07396780B2
公开(公告)日：2008-07-08
申请号：US11261600
申请日：2005-10-31
申请人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
发明人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
IPC分类号： H01L21/324
CPC分类号： H01L21/67092 , B23K26/0853 , B23K26/702
摘要： A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
摘要翻译：一种利用激光束处理机进行激光加工的方法，所述激光束处理机包括用于保持晶片的卡盘台，激光束施加装置，用于将激光束施加到保持在卡盘台上的晶片上，以及加工进给装置用于将夹盘和激光束施加装置相对于彼此进行加工，包括以下步骤：将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤，用于保持晶片放在卡盘台上的保护带上，以及激光束施加步骤，用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上，馈送装置，其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。

2. 发明申请

US20060094260A1 Method for laser processing of wafer 有权
标题翻译：晶圆激光加工方法
公开(公告)号：US20060094260A1
公开(公告)日：2006-05-04
申请号：US11261600
申请日：2005-10-31
申请人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
发明人： Hitoshi Hoshino , Ryugo Oba , Kenji Furuta , Noburu Takeda , Nobuyasu Kitahara
IPC分类号： H01L21/324
CPC分类号： H01L21/67092 , B23K26/0853 , B23K26/702
摘要： A method of carrying out the laser processing of a wafer with a laser beam processing machine comprising a chuck table for holding a wafer, a laser beam application means for applying a laser beam to the wafer held on the chuck table and a processing-feed means for processing-feeding the chuck table and the laser beam application means relative to each other, comprising the steps of a wafer affixing step for putting the wafer on the surface of a protective tape mounted on an annular frame, a wafer holding step for holding the wafer put on the protective tape on the chuck table, and a laser beam application step for applying a laser beam having a predetermined wavelength from the laser beam application means to the wafer held on the chuck table and processing-feeding the wafer with the processing-feed means, wherein the protective tape is made of a material which transmits the laser beam having a predetermined wavelength applied from the laser beam application means.
摘要翻译：一种利用激光束处理机进行激光加工的方法，所述激光束处理机包括用于保持晶片的卡盘台，激光束施加装置，用于将激光束施加到保持在卡盘台上的晶片上，以及加工进给装置用于将夹盘和激光束施加装置相对于彼此进行加工，包括以下步骤：将晶片放置在安装在环形框架上的保护带的表面上的晶片固定步骤，用于保持晶片放在卡盘台上的保护带上，以及激光束施加步骤，用于将来自激光束施加装置的具有预定波长的激光束施加到保持在卡盘台上的晶片上，馈送装置，其中保护带由透射从激光束施加装置施加的具有预定波长的激光束的材料制成。

3. 发明申请

US20080003708A1 Method of processing sapphire substrate 审中-公开
标题翻译：处理蓝宝石衬底的方法
公开(公告)号：US20080003708A1
公开(公告)日：2008-01-03
申请号：US11819673
申请日：2007-06-28
申请人： Hitoshi Hoshino , Koji Yamaguchi , Kenji Furuta , Hiroshi Morikazu , Ryugo Oba , Yukio Morishige
发明人： Hitoshi Hoshino , Koji Yamaguchi , Kenji Furuta , Hiroshi Morikazu , Ryugo Oba , Yukio Morishige
IPC分类号： H01L21/30
CPC分类号： H01L33/0095 , B23K26/0853 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011
摘要： To provide a method of processing a sapphire substrate, where reduction in luminance of light emitting devices can be suppressed if a sapphire substrate is divided into individual light emitting devices by irradiation of a laser beam, a pulsed laser beam having a small pulse energy of 0.6 μJ to 10 μJ, and an extremely small pulse width in a range of femto-second is irradiated to the sapphire substrate while a condensing point is positioned within each of regions corresponding to predetermined division lines on the sapphire substrate so that affected zones are formed, thereby the laser beam can be irradiated even at a high peak power density of 4×1013 W/cm2 to 5×1015 W/cm2, consequently each of the affected zones can be formed at only a desired condensing point within the sapphire substrate, and necessary processing can be performed while damage to nitride semiconductors or the sapphire substrate is minimized.
摘要翻译：为了提供一种处理蓝宝石衬底的方法，其中如果通过激光束的照射将蓝宝石衬底分成单独的发光器件，则可以抑制发光器件的亮度降低，脉冲能量为0.6的脉冲激光束在蓝宝石衬底上照射到毫微微秒范围内的非常小的脉冲宽度，同时聚光点位于与蓝宝石衬底上的预定划分线对应的每个区域内，形成影响区域，从而激光束即使在4×10 13 W / cm 2至高达5×10 15 W / cm 2的高峰值功率密度下也能够照射 > 2 ，因此每个受影响的区域可以仅形成在蓝宝石衬底内的期望的凝聚点处，并且可以执行必要的处理，同时对氮化物半导体或蓝宝石衬底的损伤最小化。

4. 发明申请

US20060255022A1 Wafer laser processing method and laser beam processing machine 审中-公开
标题翻译：晶圆激光加工方法和激光束加工机
公开(公告)号：US20060255022A1
公开(公告)日：2006-11-16
申请号：US11413594
申请日：2006-04-28
申请人： Hitoshi Hoshino , Kenji Furuta , Ryugo Oba
发明人： Hitoshi Hoshino , Kenji Furuta , Ryugo Oba
IPC分类号： B23K26/38
CPC分类号： B23K26/0876 , B23K26/0622 , B23K26/066 , B23K26/0732 , B23K26/0736 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A wafer laser processing method for forming a groove by applying a pulse laser beam to the back surface of a wafer comprising light emitting elements which are formed in a plurality of areas sectioned by a plurality of dividing lines on the front surface of a sapphire substrate, along the dividing lines, wherein an energy density of a focal spot of the pulse laser beam is set to 1 J/cm2 or more.
摘要翻译：一种用于通过将脉冲激光束施加到晶片的背面的晶片激光加工方法，所述晶片包括发光元件，所述发光元件形成在由蓝宝石衬底的前表面上的多个划分线分割的多个区域中，沿着分割线，其中脉冲激光束的焦斑的能量密度设定为1J / cm 2以上。

5. 发明申请

US20060035411A1 Laser processing method 审中-公开
标题翻译：激光加工方法
公开(公告)号：US20060035411A1
公开(公告)日：2006-02-16
申请号：US11200142
申请日：2005-08-10
申请人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
发明人： Ryugo Oba , Kenji Furuta , Hitoshi Hoshino , Nobuyasu Kitahara , Noboru Takeda
IPC分类号： H01L21/50
CPC分类号： H01L21/78 , B23K26/0622 , B23K26/0736 , B23K26/364 , B23K26/40 , B23K2103/50
摘要： A laser processing method for forming a laser groove along dividing lines by applying a pulse laser beam along the dividing lines formed on a workpiece, the method comprising the steps of forming the focusing spot of the pulse laser beam in a shape of oval, positioning the long axis of the oval focusing spot along each of the dividing lines, and moving the focusing spot and the workpiece along the dividing line relative to each other.
摘要翻译：一种激光加工方法，通过沿着形成在工件上的分割线施加脉冲激光束沿着分割线形成激光槽，该方法包括以下步骤：将脉冲激光束的聚焦点形成为椭圆形，沿着每条分割线的椭圆形聚焦点的长轴，并且使聚焦点和工件沿分割线相对于彼此移动。

6. 发明申请

US20050155954A1 Semiconductor wafer processing method 审中-公开
标题翻译：半导体晶片加工方法
公开(公告)号：US20050155954A1
公开(公告)日：2005-07-21
申请号：US11036334
申请日：2005-01-18
申请人： Ryugo Oba , Hitoshi Hoshino , Yukiyasu Masuda
发明人： Ryugo Oba , Hitoshi Hoshino , Yukiyasu Masuda
IPC分类号： B23K26/00 , B23K26/06 , B23K26/14 , B23K26/40 , B23K101/40 , B28D5/00 , B28D5/02 , H01L21/00 , H01L21/30 , H01L21/301 , H01L21/304 , H01L21/78
CPC分类号： B23K26/0622 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , B28D5/023
摘要： A semiconductor wafer processing method for dividing a semiconductor wafer comprising semiconductor chips, which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a semiconductor substrate and are sectioned by streets, into individual semiconductor chips by cutting the wafer with a cutting blade along the streets, the method comprising a laser groove forming step for forming laser grooves which reach the semiconductor substrate by applying a pulse laser beam to the streets of the semiconductor wafer; and a cutting step for cutting the semiconductor substrate with the cutting blade along the laser grooves formed in the streets of the semiconductor wafer, wherein in the laser groove forming step, spots of the pulse laser beam applied to the streets are shaped into rectangular spots by a mask member and the processing conditions are set to satisfy L>(V/Y) (in which Y (Hz) is a repetition-frequency of the pulse laser beam, V (mm/sec) is a processing-feed rate (relative moving speed of the wafer to the pulse laser beam), and L is a length in the processing-feed direction of the spot of the pulse laser beam).
摘要翻译：一种半导体晶片处理方法，其包括半导体芯片，其由由绝缘膜和层压在半导体衬底的前表面上并被街道划分的功能膜组成的叠层组成的半导体晶片通过切割分割成单独的半导体芯片所述晶片具有沿街道的切割刀片，所述方法包括激光槽形成步骤，用于通过向所述半导体晶片的街道施加脉冲激光束来形成到达所述半导体衬底的激光槽; 以及切割步骤，用于沿着形成在半导体晶片的街道上的激光槽切割半导体衬底，其中在激光槽形成步骤中，施加到街道上的脉冲激光束的斑点通过掩模构件和处理条件被设定为满足L>（V / Y）（其中Y（Hz）是脉冲激光束的重复频率），V（mm / sec）是加工进给速率将晶片移动到脉冲激光束的速度），L是脉冲激光束的光点的处理供给方向的长度）。

7. 发明申请

US20130062734A1 CRYSTALLINE FILM, DEVICE, AND MANUFACTURING METHODS FOR CRYSTALLINE FILM AND DEVICE 审中-公开
标题翻译：晶体膜和器件的制造方法和晶体管和器件的制造方法
公开(公告)号：US20130062734A1
公开(公告)日：2013-03-14
申请号：US13582532
申请日：2011-03-04
申请人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
发明人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
IPC分类号： H01L29/20 , H01L21/205
CPC分类号： H01L21/268 , C30B33/04 , H01L21/0237 , H01L21/0242 , H01L21/02428 , H01L21/02458 , H01L21/0254 , H01L21/02686 , H01L21/02691
摘要： Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. And the crystalline film has a thickness of 300 μm or more and 10 mm or less and reformed region pattern is formed in an internal portion of the crystalline film.
摘要翻译：提供了一种结晶膜，其中已经消除了与用于外延生长的衬底分离之后的晶轴角度的变化，并且通过包括结晶膜而提高了其性能的各种器件。并且结晶膜的厚度为300μm以上且10mm以下，并且在结晶膜的内部形成有改质区域图案。

8. 发明申请

US20130161794A1 INTERNALLY REFORMED SUBSTRATE FOR EPITAXIAL GROWTH, INTERNALLY REFORMED SUBSTRATE WITH MULTILAYER FILM, SEMICONDUCTOR DEVICE, BULK SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHODS THEREFOR 审中-公开
标题翻译：用于外延生长的内部改性基板，具有多层膜的内部改性基板，半导体器件，块状半导体基板及其制造方法
公开(公告)号：US20130161794A1
公开(公告)日：2013-06-27
申请号：US13582550
申请日：2011-03-04
申请人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
发明人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
IPC分类号： H01L21/02 , H01L29/20 , H01L29/06
CPC分类号： C30B33/04 , B23K26/0006 , B23K26/53 , B23K2103/56 , H01L21/0237 , H01L21/0242 , H01L21/02428 , H01L21/0254 , H01L21/02658 , H01L21/02686 , H01L21/268 , H01L31/184 , H01L33/007
摘要： Provided are an internally reformed substrate for epitaxial growth having an arbitrary warpage shape and/or an arbitrary warpage amount, an internally reformed substrate with a multilayer film using the internally reformed substrate for epitaxial growth, a semiconductor device, a bulk semiconductor substrate, and manufacturing methods therefor. The internally reformed substrate for epitaxial growth includes: a single crystal substrate; and a heat-denatured layer formed in an internal portion of the single crystal substrate by laser irradiation to the single crystal substrate.
摘要翻译：提供具有任意翘曲形状和/或任意翘曲量的外延生长的内部重整基板，具有使用用于外延生长的内部重整基板的多层膜的内部重整基板，半导体器件，体半导体基板和制造方法。用于外延生长的内部改性衬底包括：单晶衬底; 以及通过激光照射单晶衬底而在单晶衬底的内部形成的热变性层。

9. 发明申请

US20130161797A1 SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD 审中-公开
标题翻译：单晶基板，单晶基板的制造方法，单层薄膜单晶基板的制造方法及元件制造方法
公开(公告)号：US20130161797A1
公开(公告)日：2013-06-27
申请号：US13582587
申请日：2011-03-04
申请人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
发明人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
IPC分类号： H01L21/02 , H01L29/06
CPC分类号： C30B33/04 , H01L21/268 , H01L29/205
摘要： In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.
摘要翻译：为了校正由形成多层膜而产生的翘曲，提供了单晶衬底，其包括设置在包括第一区域和第二区域的两个区域之一中的热变性层，所述第一区域和第二区域通过将单晶衬底并且其朝向设置有热变性层的区域的表面的侧面翘曲翘曲，单晶衬底的制造方法，具有使用单层的多层膜的单晶衬底的制造方法晶体基板以及使用具有多层膜的单晶基板的制造方法的元件制造方法。

10. 发明申请

US20130082358A1 SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, MANUFACTURING METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND ELEMENT MANUFACTURING METHOD 审中-公开
标题翻译：具有多层膜的单晶衬底，具有多层膜的单晶衬底的制造方法和元件制造方法
公开(公告)号：US20130082358A1
公开(公告)日：2013-04-04
申请号：US13582570
申请日：2011-03-04
申请人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
发明人： Hideo Aida , Natsuko Aota , Hitoshi Hoshino , Kenji Furuta , Tomosaburo Hamamoto , Keiji Honjo
IPC分类号： H01L23/00 , H01L21/02
CPC分类号： H01L23/564 , C30B29/20 , C30B33/02 , H01L21/0237 , H01L21/0242 , H01L21/02428 , H01L21/0254 , H01L21/02686 , H01L21/268 , H01L29/045 , H01L2924/0002 , H01L2924/00
摘要： In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.
摘要翻译：为了校正在形成多层膜时发生的翘曲，提供了具有多层膜的单晶基板，其制造方法和使用该制造方法的元件制造方法。具有多层膜的单晶衬底包括：单晶衬底（20）; 包括形成在所述单晶衬底（20）的一个表面上并且具有压应力的两层或更多层的多层膜（30）和设置在所述单晶衬底（20）的厚度方向上将所述单晶衬底（20）平面分割成两个区域（20U，20D）的热变性层（22）至少在所述表面相对侧的区域（20D）中到其上形成有多层膜（30）的单晶基板（20）的一个表面。

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