会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • Method of dividing a plate-like workpiece
    • 分割板状工件的方法
    • US20050035100A1
    • 2005-02-17
    • US10914154
    • 2004-08-10
    • Satoshi Genda
    • Satoshi Genda
    • H01L21/301B23K26/40B28D5/02B23K26/38
    • B28D5/022B23K26/40B23K2101/40B23K2103/50
    • A method of dividing a plate-like workpiece having a layer that is made of a different material from that of a substrate and is formed on the front surface of the substrate along predetermined dividing lines, comprising a laser beam application step for applying a laser beam along the dividing lines formed on the plate-like workpiece to form a plurality of grooves deeper than the layer and a cutting step for cutting the plate-like workpiece with a cutting blade along the plurality of grooves formed in the laser beam application step, wherein a length between the outer sides of grooves on both sides formed in the laser beam application step is set to be larger than the thickness of the cutting blade and the cutting blade cuts the area between the outer sides of the grooves on both sides in the cutting step.
    • 一种分割具有由不同材料制成的层的板状工件的方法,其特征在于,沿着预定分割线形成在所述基板的前表面上,并且沿着预定分割线形成具有不同材料的层的板状工件,所述方法包括:激光束施加步骤, 沿着形成在所述板状工件上的分割线,以形成比所述层更深的多个槽;以及切割步骤,用于沿着在所述激光束施加步骤中形成的所述多个切割刀沿切割刀切割所述板状工件,其中 在激光束施加步骤中形成的两侧的槽的外侧之间的长度被设定为大于切割刀的厚度,并且切割刀片在切割中切割两侧的槽的外侧之间的区域 步。
    • 5. 发明授权
    • Wafer dividing method
    • 晶圆分割法
    • US07459378B2
    • 2008-12-02
    • US11269548
    • 2005-11-09
    • Satoshi GendaHiroshi Nakamura
    • Satoshi GendaHiroshi Nakamura
    • H01L21/00
    • B81C1/00888B81C2201/053H01L21/67132
    • A method of dividing a wafer having a plurality of micro electro mechanical systems and a plurality of streets for partitioning the micro electro mechanical systems formed on the front surface of a wafer substrate, the method comprising a protective tape affixing step for affixing a protective tape to the front surface of the wafer; a cut groove-forming step for forming a cut groove by cutting the wafer having the protective tape affixed thereto along the streets from the back surface of the wafer substrate, leaving a cutting margin having a predetermined thickness on the front surface side of the wafer substrate; and a cutting step for cutting the cutting margins by applying a laser beam to the cutting margins of the cut grooves formed along the streets.
    • 一种分割具有多个微电子机械系统的晶片的方法和用于分割形成在晶片基板的前表面上的微机电系统的多个街道的方法,所述方法包括用于将保护带固定的保护带固定步骤 晶片的前表面; 切割槽形成步骤,用于通过从晶片衬底的背面沿街道切割具有保护带的晶片来形成切割槽,在晶片衬底的前表面侧留下具有预定厚度的切割边缘 ; 以及切割步骤,通过将激光束施加到沿着街道形成的切割槽的切割边缘来切割切割边缘。
    • 6. 发明申请
    • Wafer dividing method
    • 晶圆分割法
    • US20060105546A1
    • 2006-05-18
    • US11269548
    • 2005-11-09
    • Satoshi GendaHiroshi Nakamura
    • Satoshi GendaHiroshi Nakamura
    • H01L21/78H01L21/301H01L21/46
    • B81C1/00888B81C2201/053H01L21/67132
    • A method of dividing a wafer having a plurality of micro electro mechanical systems and a plurality of streets for partitioning the micro electro mechanical systems formed on the front surface of a wafer substrate, the method comprising a protective tape affixing step for affixing a protective tape to the front surface of the wafer; a cut groove-forming step for forming a cut groove by cutting the wafer having the protective tape affixed thereto along the streets from the back surface of the wafer substrate, leaving a cutting margin having a predetermined thickness on the front surface side of the wafer substrate; and a cutting step for cutting the cutting margins by applying a laser beam to the cutting margins of the cut grooves formed along the streets.
    • 一种分割具有多个微电子机械系统的晶片和用于分割形成在晶片基板的前表面上的微机电系统的多个街道的方法,该方法包括用于将保护带固定的保护带固定步骤 晶片的前表面; 切割槽形成步骤,用于通过从晶片衬底的背面沿街道切割具有保护带的晶片来形成切割槽,在晶片衬底的前表面侧留下具有预定厚度的切割边缘 ; 以及切割步骤,通过将激光束施加到沿着街道形成的切割槽的切割边缘来切割切割边缘。
    • 7. 发明授权
    • Fabrication method for device having die attach film on the back side thereof
    • 在其后侧具有管芯附着膜的器件的制造方法
    • US07915140B2
    • 2011-03-29
    • US12430576
    • 2009-04-27
    • Satoshi GendaNobuyasu Kitahara
    • Satoshi GendaNobuyasu Kitahara
    • H01L21/46H01L21/78H01L21/301
    • H01L21/78
    • A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs.
    • 一种用于从晶片制造各个器件的器件制造方法,其中每个器件的背面被用于芯片接合的粘合剂膜覆盖。 该器件制造方法包括:晶片分割步骤,通过在研磨处理之前使用切片将晶片分割成多个切口的单个器件;粘合膜安装步骤,在执行所述晶片的背面之后,将粘合剂膜安装在晶片的背面 晶片分割工序,以及粘合膜分割工序,在进行粘合膜安装工序之后,沿着切口将粘合膜施加激光束,从而沿着切口划分粘合膜。
    • 9. 发明申请
    • FABRICATION METHOD FOR DEVICE HAVING DIE ATTACH FILM ON THE BACK SIDE THEREOF
    • 具有背面胶片的装置的制造方法
    • US20090280622A1
    • 2009-11-12
    • US12430576
    • 2009-04-27
    • Satoshi GendaNobuyasu Kitahara
    • Satoshi GendaNobuyasu Kitahara
    • H01L21/304
    • H01L21/78
    • A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs.
    • 一种用于从晶片制造各个器件的器件制造方法,其中每个器件的背面被用于芯片接合的粘合剂膜覆盖。 该器件制造方法包括:晶片分割步骤,通过在研磨处理之前使用切片将晶片分割成多个切口的单个器件;粘合膜安装步骤,在执行所述晶片的背面之后,将粘合剂膜安装在晶片的背面 晶片分割工序,以及粘合膜分割工序,在进行粘合膜安装工序之后,沿着切口将粘合膜施加激光束,从而沿着切口划分粘合膜。
    • 10. 发明授权
    • Laser processing method for wafer
    • 晶圆激光加工方法
    • US07544588B2
    • 2009-06-09
    • US11480515
    • 2006-07-05
    • Satoshi Genda
    • Satoshi Genda
    • H01L21/46
    • B23K37/0408B23K26/0622B23K26/0736B23K26/0853B23K26/361B23K26/364B23K26/40B23K26/702B23K37/0443B23K2103/50
    • Disclosed herein is a laser processing method for a wafer having a plurality of regions defined by streets, with the regions having a plurality of devices formed therein. The method irradiates the wafer with a laser beam along the streets, thereby forming laser processed grooves along the streets. It includes a processed groove formation step of irradiating the wafer while positioning the beam's focus spot on an irradiation surface of the wafer, thereby forming the laser processed grooves; and a processed groove finishing step of irradiating the wafer along the laser processed grooves formed by the processed groove formation step, while positioning the focus spot beyond the bottom of the laser processed grooves, thereby finishing both sides of the laser processed grooves.
    • 本文公开了一种具有由街道限定的多个区域的晶片的激光加工方法,其中形成有多个器件。 该方法沿着街道用激光束照射晶片,从而沿街道形成激光加工槽。 其包括处理槽形成步骤,其将晶片的聚焦点定位在晶片的照射表面上,照射晶片,从而形成激光加工槽; 以及处理槽精加工步骤,在将聚焦点定位在激光加工槽的底部之外,同时沿着由处理槽形成步骤形成的激光加工槽照射晶片,从而完成激光加工槽的两侧。