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1. 发明授权

US10720306B2 Charged particle beam device 有权
公开(公告)号：US10720306B2
公开(公告)日：2020-07-21
申请号：US16275775
申请日：2019-02-14
申请人： Hitachi High-Technologies Corporation
发明人： Toshiyuki Yokosuka , Chahn Lee , Hideyuki Kazumi , Hajime Kawano , Shahedul Hoque , Kumiko Shimizu , Hiroyuki Takahashi
IPC分类号： H01J37/28 , H01J37/147 , H01J37/20 , H01J37/22
摘要： The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

2. 发明授权

US10249474B2 Charged particle beam device 有权
公开(公告)号：US10249474B2
公开(公告)日：2019-04-02
申请号：US15618203
申请日：2017-06-09
申请人： Hitachi High-Technologies Corporation
发明人： Toshiyuki Yokosuka , Chahn Lee , Hideyuki Kazumi , Hajime Kawano , Shahedul Hoque , Kumiko Shimizu , Hiroyuki Takahashi
IPC分类号： H01J37/20 , H01J37/22 , H01J37/28 , H01J37/147
摘要： The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

3. 发明授权

US10121634B2 Charged particle beam device and charged particle beam measurement method 有权
公开(公告)号：US10121634B2
公开(公告)日：2018-11-06
申请号：US15021039
申请日：2014-05-30
申请人： Hitachi High-Technologies Corporation
发明人： Natsuki Tsuno , Yoshinobu Kimura , Hideyuki Kazumi , Hajime Kawano , Junichiro Tomizawa
IPC分类号： H01J37/244 , H01J37/28 , H01J37/26
摘要： An object of the present invention is to realize both of the accuracy of measuring the amount of secondary electron emissions and the stability of a charged particle beam image in a charged particle beam device. In a charged particle beam device, extraction of detected signals is started by a first trigger signal, the extraction of the detected signals is completed by a second trigger signal, the detected signals are sampled N times using N (N is a natural number) third trigger signals that equally divide an interval time T between the first trigger signal and the second trigger signal, secondary charged particles are measured by integrating and averaging the signals sampled in respective division times ΔT obtained by equally dividing the interval time T, and the division time ΔT is controlled in such a manner that the measured number of secondary charged particles becomes larger than the minimum number of charged particles satisfying ergodicity.

4. 发明授权

US09644955B2 Scanning electron beam device with focus adjustment based on acceleration voltage and dimension measurement method using same 有权
公开(公告)号：US09644955B2
公开(公告)日：2017-05-09
申请号：US14364392
申请日：2012-11-26
申请人： Hitachi High-Technologies Corporation
发明人： Tasuku Yano , Yasunari Sohda , Muneyuki Fukuda , Katsunori Onuki , Hajime Kawano , Naomasa Suzuki
IPC分类号： H01J37/28 , G01B15/00 , H01J37/21 , H01L21/66 , H01J37/244
CPC分类号： G01B15/00 , G01B2210/56 , H01J37/21 , H01J37/244 , H01J37/28 , H01J2237/20 , H01J2237/281 , H01L22/12
摘要： A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.

5. 发明授权

US09478392B2 Charged particle beam apparatus and image generation method 有权
标题翻译：带电粒子束装置和图像生成方法
公开(公告)号：US09478392B2
公开(公告)日：2016-10-25
申请号：US14803304
申请日：2015-07-20
申请人： Hitachi High-Technologies Corporation
发明人： Kazuki Ikeda , Wen Li , Ryo Kadoi , Hisaaki Kanai , Hajime Kawano , Hiroyuki Takahashi , Makoto Suzuki
IPC分类号： H01J37/26 , H01J37/22 , H01J37/29 , H01J37/06
CPC分类号： H01J37/222 , H01J37/06 , H01J37/244 , H01J37/28 , H01J37/292 , H01J2237/221 , H01J2237/24495 , H01J2237/24592 , H01J2237/28
摘要： There is provided a charged particle beam apparatus radiating a charged particle beam to a specimen so as to acquire an image of the specimen, the charged particle beam apparatus including: a charged particle gun that generates the charged particle beam; an electron optical system that radiates the charged particle beam emitted from the charged particle gun onto a surface of the specimen so as to scan the surface of the specimen; a detecting unit that detects secondary electrons or reflection electrons emitted from the specimen, and converts the electrons into pulse signals; a pulse signal detecting circuit that detects time detecting information regarding time of the pulse signals converted by the detecting unit, and peak value detecting information regarding each peak value of the pulse signals; and an image processing unit that generates luminance gradation of the acquired image based on a time detecting signal and a peak value detecting signal of the pulse signals detected by the pulse signal detecting circuit.
摘要翻译：提供了一种带电粒子束装置，其将样品的带电粒子束照射以获取样本的图像，所述带电粒子束装置包括：产生带电粒子束的带电粒子枪; 电子光学系统，将从带电粒子枪发射的带电粒子辐射到样品的表面上，以扫描样品的表面; 检测单元，其检测从样本发射的二次电子或反射电子，并将电子转换为脉冲信号; 脉冲信号检测电路，检测关于由检测单元转换的脉冲信号的时间的时间检测信息，以及关于脉冲信号的每个峰值的峰值检测信息; 以及图像处理单元，其基于由脉冲信号检测电路检测的脉冲信号的时间检测信号和峰值检测信号，生成所获取的图像的亮度等级。

6. 发明申请

US20150076362A1 CHARGED PARTICLE BEAM APPARATUS 有权
标题翻译：充电颗粒光束装置
公开(公告)号：US20150076362A1
公开(公告)日：2015-03-19
申请号：US14396769
申请日：2013-04-18
申请人： Hitachi High-Technologies Corporation
发明人： Yasunari Sohda , Tasuku Yano , Muneyuki Fukuda , Noritsugu Takahashi , Hajime Kawano , Hiroyuki Ito
IPC分类号： H01J37/141 , H01J37/147 , H01J37/28
CPC分类号： H01J37/141 , H01J37/147 , H01J37/1475 , H01J37/153 , H01J37/28 , H01J2237/1405 , H01J2237/1532 , H01J2237/1536
摘要： In order to provide a charged particle beam apparatus enabling reduction of deflecting coma aberration in cases such as where wide field-of-view scanning is carried out, a charged particle beam apparatus is provided with an electromagnetic objective lens and a stage on which a sample is placed, wherein the electromagnetic objective lens is provided with the following: a plurality of magnetic paths; an objective lens coil; an opening disposed so as to face the sample; an inner lens deflector disposed more on the objective lens coil side than the end of the opening.
摘要翻译：为了提供在诸如进行宽视场扫描的情况下能够减少偏转彗形像差的带电粒子束装置，带电粒子束装置设置有电磁物镜和在其上具有样品放置，其中电磁物镜设置有：多个磁路; 物镜线圈; 设置成面向样品的开口; 设置在比开口端部更靠物镜线圈侧的内透镜偏转器。

7. 发明授权

US08618499B1 Electron beam irradiation apparatus 有权
公开(公告)号：US08618499B1
公开(公告)日：2013-12-31
申请号：US13788035
申请日：2013-03-07
申请人： Hitachi High-Technologies Corporation
发明人： Shahedul Hoque , Hajime Kawano
IPC分类号： H01J37/244 , H01J37/256 , G01N23/203
CPC分类号： H01J37/29 , G01N23/203 , H01J37/244 , H01J37/28 , H01J2237/24475
摘要： The present invention has for its object to provide an electron beam irradiation apparatus which can suppress influences the electric fields generated by a plurality of backscattered electron detectors have. To attain the above object, an electron beam irradiation apparatus equipped with a scanning deflector comprises a plurality of backscattered electron detectors, a power source for detectors which applies voltages to the plural backscattered electron detectors, respectively, and a controller device which adjusts application voltages the power source for detectors delivers, on the basis of an image shift when the voltages are applied to the plural backscattered electron detectors.

8. 发明授权

US10134558B2 Scanning electron microscope 有权
公开(公告)号：US10134558B2
公开(公告)日：2018-11-20
申请号：US15123828
申请日：2015-02-04
申请人： Hitachi High-Technologies Corporation
发明人： Yasunari Sohda , Takeyoshi Ohashi , Takafumi Miwa , Noritsugu Takahashi , Hajime Kawano
IPC分类号： H01J37/05 , H01J37/29 , H01J37/21 , H01J37/28 , H01J37/145 , H01J37/26
摘要： A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.

9. 发明申请

US20180247790A1 CHARGED PARTICLE BEAM DEVICE AND IMAGE FORMING METHOD USING SAME 审中-公开
公开(公告)号：US20180247790A1
公开(公告)日：2018-08-30
申请号：US15556926
申请日：2016-02-16
申请人： Hitachi High-Technologies Corporation
发明人： Wen Li , Kazuki Ikeda , Hajime Kawano , Hiroyuki Takahashi , Makoto Suzuki
IPC分类号： H01J37/22 , H01J37/244 , H01J37/28
CPC分类号： H01J37/222 , H01J37/244 , H01J37/28 , H01J2237/221 , H01J2237/226 , H01J2237/2448 , H01J2237/24495
摘要： In order to improve visibility of a measurement/inspection image in an inspection measurement apparatus inspecting or measuring a fine pattern, a charged particle beam device is configured to include a charged particle optical system that irradiates a surface of a sample with a converged charged particle beam so as to perform scanning, a detection unit that detects secondary charged particles generated from the sample irradiated with the charged particle beam by the charged particle optical system, an image forming unit that receives a detection signal from the detection unit and forms an image of the sample, an image processing unit that processes the image formed in the image forming unit, and a display unit that displays a result processed by the image processing unit, in which the image forming unit includes an analog signal processing portion that processes an analog signal component of the detection signal in the detection unit so as to form an image, a pulse count method signal processing portion that processes a pulse signal component of the detection signal in the detection unit so as to form an image, and an image combination processing portion that combines the image formed in the analog signal processing portion with the image formed in the pulse count method signal processing portion.

10. 发明授权

US09960006B2 Charged-particle-beam device 有权
公开(公告)号：US09960006B2
公开(公告)日：2018-05-01
申请号：US15310438
申请日：2015-04-28
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Noritsugu Takahashi , Yasunari Sohda , Wataru Mori , Yuko Sasaki , Hajime Kawano
IPC分类号： G01N23/22 , G01N23/225 , G21K7/00 , H01J37/28 , H01J37/05 , H01J37/147 , H01J37/153 , H01J37/21 , H01J37/244 , H01J37/26 , H01J37/12
CPC分类号： H01J37/05 , H01J37/12 , H01J37/147 , H01J37/153 , H01J37/21 , H01J37/244 , H01J37/265 , H01J37/28 , H01J2237/1532 , H01J2237/2448
摘要： A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter (23) is arranged between a detector and a lens (11) arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device (93) is provided for the interlocked control of the Wien filter (23) and a lens (12) arranged on the charged-particle-source side among the two stages of lenses.

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