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1. 发明申请

US20090134395A1 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：主动矩阵液晶显示装置
公开(公告)号：US20090134395A1
公开(公告)日：2009-05-28
申请号：US12358617
申请日：2009-01-23
申请人： Hisashi OHTANI , Yasushi OGATA
发明人： Hisashi OHTANI , Yasushi OGATA
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/78645
摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.
摘要翻译：形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。在第一绝缘膜上形成平坦度高的第二绝缘膜。通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此首先将绝缘膜用作电介质，由此在导电膜和金属布线之间形成像素的辅助电容器。可以通过在辅助电容器形成液晶分子的取向紊乱（即，旋错）的大的选择区域中来增加有效孔径比。

2. 发明申请

US20130001581A1 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 失效
标题翻译：主动矩阵液晶显示装置
公开(公告)号：US20130001581A1
公开(公告)日：2013-01-03
申请号：US13587109
申请日：2012-08-16
申请人： Hisashi OHTANI , Yasushi OGATA
发明人： Hisashi OHTANI , Yasushi OGATA
IPC分类号： H01L29/786
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/78645
摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with the first insulating film serving as a dielectric.
摘要翻译：形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。在第一绝缘膜上形成平坦度高的第二绝缘膜。通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此在第一绝缘膜用作电介质的状态下，在导电膜和金属布线之间形成像素的辅助电容器。

3. 发明申请

US20110215327A1 ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：主动矩阵液晶显示装置
公开(公告)号：US20110215327A1
公开(公告)日：2011-09-08
申请号：US13111344
申请日：2011-05-19
申请人： Hisashi OHTANI , Yasushi OGATA
发明人： Hisashi OHTANI , Yasushi OGATA
IPC分类号： H01L29/786
CPC分类号： G02F1/136209 , G02F1/136213 , G02F1/136227 , H01L27/124 , H01L27/1255 , H01L29/78645
摘要： A first insulating thin film having a large dielectric constant such as a silicon nitride film is formed so as to cover a source line and a metal wiring that is in the same layer as the source line. A second insulating film that is high in flatness is formed on the first insulating film. An opening is formed in the second insulating film by etching the second insulating film, to selectively expose the first insulating film. A conductive film to serve as a light-interruptive film is formed on the second insulating film and in the opening, whereby an auxiliary capacitor of the pixel is formed between the conductive film and the metal wiring with first the insulating film serving as a dielectric. The effective aperture ratio can be increased by forming the auxiliary capacitor in a selected region where the influences of alignment disorder of liquid crystal molecules, i.e., disclination, are large.
摘要翻译：形成具有大介电常数的第一绝缘薄膜，例如氮化硅膜，以覆盖与源极线处于同一层的源极线和金属布线。在第一绝缘膜上形成平坦度高的第二绝缘膜。通过蚀刻第二绝缘膜在第二绝缘膜中形成开口，以选择性地暴露第一绝缘膜。在第二绝缘膜和开口中形成用作遮光膜的导电膜，由此首先将绝缘膜用作电介质，由此在导电膜和金属布线之间形成像素的辅助电容器。可以通过在辅助电容器形成液晶分子的取向紊乱（即，旋错）的大的选择区域中来增加有效孔径比。

4. 发明申请

US20100295046A1 SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体薄膜和半导体器件
公开(公告)号：US20100295046A1
公开(公告)日：2010-11-25
申请号：US12849964
申请日：2010-08-04
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Toru MITSUKI , Akiharu MIYANAGA , Yasushi OGATA
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Toru MITSUKI , Akiharu MIYANAGA , Yasushi OGATA
IPC分类号： H01L29/786
CPC分类号： H01L29/78675 , G02F1/13454 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L21/02664 , H01L21/02667 , H01L21/02672 , H01L21/3221 , H01L21/8221 , H01L27/0688 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78654 , Y10S438/973
摘要： After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
摘要翻译：在通过利用催化剂元素使无定形半导体薄膜结晶之后，通过在含有卤素元素的气氛中进行热处理来除去催化剂元素。得到的晶体半导体薄膜显示{110}取向。由于单个晶粒具有大致相等的取向，所以晶体半导体薄膜基本上不具有晶界，并且具有被认为是单晶的结晶度或者被认为是如此。

5. 发明申请

US20110114936A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE DISPLAY DEVICE 有权
标题翻译：显示装置的显示装置和制造方法
公开(公告)号：US20110114936A1
公开(公告)日：2011-05-19
申请号：US13010362
申请日：2011-01-20
申请人： Kengo AKIMOTO , Hisashi OHTANI , Misako HIROSUE
发明人： Kengo AKIMOTO , Hisashi OHTANI , Misako HIROSUE
IPC分类号： H01L51/52
CPC分类号： H01L27/124 , H01L27/3244 , H01L2227/323
摘要： It is an object of the present invention to provide a technique to manufacture a highly reliable display device at a low cost with high yield. A display device according to the present invention includes a semiconductor layer including an impurity region of one conductivity type; a gate insulating layer, a gate electrode layer, and a wiring layer in contact with the impurity region of one conductivity type, which are provided over the semiconductor layer; a conductive layer which is formed over the gate insulating layer and in contact with the wiring layer; a first electrode layer in contact with the conductive layer; an electroluminescent layer provided over the first electrode layer; and a second electrode layer, where the wiring layer is electrically connected to the first electrode layer with the conductive layer interposed therebetween.
摘要翻译：本发明的目的是提供一种以高成本低成本制造高度可靠的显示装置的技术。根据本发明的显示装置包括：包括一种导电类型的杂质区的半导体层; 栅极绝缘层，栅极电极层和与一个导电类型的杂质区域接触的布线层，设置在半导体层上; 导电层，其形成在所述栅绝缘层上并与所述布线层接触; 与导电层接触的第一电极层; 设置在所述第一电极层上的电致发光层; 以及第二电极层，其中所述布线层与所述第一电极层电连接，其间插入有导电层。

6. 发明申请

US20080286950A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080286950A1
公开(公告)日：2008-11-20
申请号：US12175481
申请日：2008-07-18
申请人： Akiharu MIYANAGA , Hisashi OHTANI , Yasuhiko TAKEMURA
发明人： Akiharu MIYANAGA , Hisashi OHTANI , Yasuhiko TAKEMURA
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , A61B18/20 , A61B2018/20359 , B23K26/08 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which the crystallized film is further exposed to a laser light for improving the crystallinity. The concentration of the catalyst metal in the semiconductor film and the location of the region to be added with the catalyst metal are so selected in order that a desired crystallinity and a desired crystal structure such as a vertical crystal growth or lateral crystal growth can be obtained. Further, active elements and driver elements of a circuit substrate for an active matrix type liquid crystal device are formed by such semiconductor devices having a desired crystallinity and crystal structure respectively.
摘要翻译：制造使用结晶半导体膜的半导体器件。通过向催化剂金属提供非晶硅膜以促进其结晶，然后加热进行热结晶，形成结晶半导体膜，随后将结晶膜进一步暴露于激光以提高结晶度。选择半导体膜中的催化剂金属的浓度和添加有催化剂金属的区域的位置，以便可以获得期望的结晶度和期望的晶体结构，例如垂直晶体生长或横向晶体生长。此外，用于有源矩阵型液晶装置的电路基板的有源元件和驱动元件分别由具有期望的结晶度和晶体结构的这种半导体器件形成。

7. 发明申请

US20120108049A1 CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD OF FABRICATING THE SAME, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME 有权
标题翻译：晶体半导体薄膜，其制造方法，半导体器件及其制造方法
公开(公告)号：US20120108049A1
公开(公告)日：2012-05-03
申请号：US13338366
申请日：2011-12-28
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Tamae TAKANO
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Tamae TAKANO
IPC分类号： H01L21/28
CPC分类号： H01L29/04 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/66757 , H01L29/78675
摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.
摘要翻译：提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

8. 发明申请

US20110233556A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233556A1
公开(公告)日：2011-09-29
申请号：US13157338
申请日：2011-06-10
申请人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
发明人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
IPC分类号： H01L29/786
CPC分类号： H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/09701 , H01L2924/12044 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.
摘要翻译：本发明提供一种不容易被外部局部压力损坏的半导体器件。本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

9. 发明申请

US20110186949A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110186949A1
公开(公告)日：2011-08-04
申请号：US13084996
申请日：2011-04-12
申请人： Shunpei YAMAZAKI , Jun KOYAMA , Kiyoshi KATO , Takaaki KOEN , Yuto YAKUBO , Makoto YANAGISAWA , Hisashi OHTANI , Eiji SUGIYAMA , Nozomi HORIKOSHI
发明人： Shunpei YAMAZAKI , Jun KOYAMA , Kiyoshi KATO , Takaaki KOEN , Yuto YAKUBO , Makoto YANAGISAWA , Hisashi OHTANI , Eiji SUGIYAMA , Nozomi HORIKOSHI
IPC分类号： H01L29/66
CPC分类号： G06K19/07735 , G06K19/07722 , G06K19/07794 , H01L23/295 , H01L23/3157 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00
摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.
摘要翻译：一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。其中一个结构体设置在片上天线和增强天线之间。在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

10. 发明申请

US20100144077A1 SUBSTRATE PROCESSING APPARATUS AND METHOD AND A MANUFACTURING METHOD OF A THIN FILM SEMICONDUCTOR DEVICE 失效
标题翻译：薄膜半导体器件的基板处理装置和方法及制造方法
公开(公告)号：US20100144077A1
公开(公告)日：2010-06-10
申请号：US12705004
申请日：2010-02-12
申请人： Shunpei YAMAZAKI , Hisashi OHTANI , Hiroyuki SHIMADA , Mitsunori SAKAMA , Hisashi ABE , Satoshi TERAMOTO
发明人： Shunpei YAMAZAKI , Hisashi OHTANI , Hiroyuki SHIMADA , Mitsunori SAKAMA , Hisashi ABE , Satoshi TERAMOTO
IPC分类号： H01L21/28 , H01L21/20
CPC分类号： H01L21/02686 , C23C16/303 , C23C16/345 , C23C16/402 , C23C16/54 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L21/67155 , H01L21/67207 , H01L27/1281 , H01L29/41733 , Y10S438/905 , Y10S438/908
摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
摘要翻译：基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能，所述处理室中的至少一个具有加热功能。所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

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