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1. 发明申请

US20100264422A1 Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof 有权
标题翻译：薄膜半导体器件，使用这种薄膜半导体器件的显示器件及其制造方法
公开(公告)号：US20100264422A1
公开(公告)日：2010-10-21
申请号：US12801791
申请日：2010-06-25
申请人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
发明人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/12 , H01L29/42384 , H01L29/66765 , H01L29/78645 , H01L29/78678
摘要： A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.
摘要翻译：一种薄膜半导体器件，其形成为在具有从栅极电极，栅极绝缘膜和半导体薄膜堆叠的底栅型薄膜晶体管的绝缘基板上以从下向上的顺序形成为集成电路。栅电极包括厚度小于100nm的金属材料。栅极绝缘膜的厚度比栅电极厚。半导体薄膜包括通过激光束结晶的多晶硅。通过减小金属栅电极的厚度，热容量变小，并且金属栅电极和由玻璃等制成的绝缘基板上的热条件差异变小。本发明涉及通过对作为底栅型薄膜晶体管的有源层的半导体薄膜提供的激光退火处理进行均匀化和优化再结晶的任务。

2. 发明授权

US08604483B2 Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof 有权
公开(公告)号：US08604483B2
公开(公告)日：2013-12-10
申请号：US12801791
申请日：2010-06-25
申请人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
发明人： Hisao Hayashi , Masahiro Fujino , Yasushi Shimogaichi , Makoto Takatoku
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/12 , H01L29/42384 , H01L29/66765 , H01L29/78645 , H01L29/78678
摘要： A thin film semiconductor device formed as integrated circuits on an insulating substrate with bottom gate type thin film transistors stacked with gate electrodes, a gate insulating film and a semiconductor thin film in the order from below upward. The gate electrodes comprise metallic materials with thickness less than 100 nm. The gate insulating film has a thickness thicker than the gate electrodes. The semiconductor thin film comprises polycrystalline silicon crystallized by a laser beam. By reducing thickness of metallic gate electrodes, thermal capacity becomes small and difference in thermal condition on the metallic gate electrodes and on the insulating substrate made of glass or the like becomes small. This invention relates to the task of uniforming and optimizing recrystallization by a laser anneal treatment provided for the semiconductor thin film which works as an active layer of the bottom gate type thin film transistors.

3. 发明授权

US06653179B1 Method for manufacturing a thin film semiconductor device, method for manufacturing a display device, method for manufacturing a thin film transistors, and method for forming a semiconductor thin film 有权
标题翻译：薄膜半导体器件的制造方法，显示装置的制造方法，薄膜晶体管的制造方法以及半导体薄膜的形成方法
公开(公告)号：US06653179B1
公开(公告)日：2003-11-25
申请号：US09743899
申请日：2001-03-29
申请人： Masahiro Minegishi , Yasushi Shimogaichi , Makoto Takatoku , Hisao Hayashi
发明人： Masahiro Minegishi , Yasushi Shimogaichi , Makoto Takatoku , Hisao Hayashi
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , H01L21/2026 , H01L29/66757 , H01L29/66765
摘要： For manufacturing a thin film semiconductor device, first conducted is a film-making step to make a non-single-crystalline semiconductor thin film (4) on an insulating substrate (1). Next conducted is an annealing step to irradiate laser light (50) for once heating and melting the non-single-crystalline semiconductor thin film (4) and then changing it into a polycrystal in its cooling process. Thereafter, a processing step is conducted to form thin film transistors in an integrated form, which includes the polycrystalline semiconductor thin film (4) as their active layer. For the purpose of ensuring uniform crystallization and enlargement of grain sizes, in the annealing step, by using a laser oscillator (51) including an excimer laser source, the laser light (50) having a pulse width not shorter than 50 ns is shaped by an optical system (53) to form a rectangular cross-sectional area whose sides are not shorter than 10 mm to sequentially irradiate the semiconductor thin film (4).
摘要翻译：为了制造薄膜半导体器件，首先进行在绝缘基板（1）上制造非单晶半导体薄膜（4）的成膜步骤。接下来进行退火步骤，用于在其冷却过程中照射激光（50）一次加热和熔化非单晶半导体薄膜（4），然后将其改变为多晶体。此后，进行处理步骤以形成集成形式的薄膜晶体管，其包括作为其有源层的多晶半导体薄膜（4）。为了确保均匀结晶和晶粒尺寸的扩大，在退火步骤中，通过使用包括准分子激光源的激光振荡器（51），具有不小于50ns的脉冲宽度的激光（50）由光学系统（53），其形成侧面不小于10mm的矩形横截面积，以顺序地照射半导体薄膜（4）。

4. 发明授权

US06693258B2 Process for producing thin film semiconductor device and laser irradiation apparatus 失效
标题翻译：薄膜半导体器件和激光照射设备的制造方法
公开(公告)号：US06693258B2
公开(公告)日：2004-02-17
申请号：US10061392
申请日：2002-02-04
申请人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
发明人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
IPC分类号： H01L2976
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L29/78648 , H01L29/78678
摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.
摘要翻译：通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换成多晶材料。通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜对应于一次的多晶材料的横截面积。此时，控制从升降到下降的激光的能量强度以应用期望的变化。根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。在一些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

5. 发明授权

US06632711B2 Process for producing thin film semiconductor device and laser irradiation apparatus 失效
标题翻译：薄膜半导体器件和激光照射设备的制造方法
公开(公告)号：US06632711B2
公开(公告)日：2003-10-14
申请号：US09731905
申请日：2000-12-08
申请人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
发明人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L29/78648 , H01L29/78678
摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.
摘要翻译：通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换为多晶材料。通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜对应于一次的多晶材料的横截面积。此时，控制从升降到下降的激光的能量强度以应用期望的变化。根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。在某些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

6. 发明授权

US06440824B1 Method of crystallizing a semiconductor thin film, and method of manufacturing a thin-film semiconductor device 失效
标题翻译：半导体薄膜的结晶化方法以及薄膜半导体器件的制造方法
公开(公告)号：US06440824B1
公开(公告)日：2002-08-27
申请号：US09626888
申请日：2000-07-27
申请人： Hisao Hayashi , Hiroyuki Ikeda , Makoto Takatoku
发明人： Hisao Hayashi , Hiroyuki Ikeda , Makoto Takatoku
IPC分类号： H01L2120
CPC分类号： H01L21/02675 , H01L21/02678 , H01L21/02686 , H01L21/2026
摘要： In crystallizing a semiconductor thin film of large area by overlapping regions of irradiation with a laser beam, uniform crystallinity of the film is achieved. A semiconductor thin film is crystallized by performing shaping laser light emitted to define a laser beam which has a predetermined intensity distribution in a predetermined irradiation region, and repeatedly irradiating the semiconductor thin film with the laser beam while scanning the film so that irradiation regions may be overlapped. The laser beam is shaped so that the sectional intensity distribution of the laser beam in the irradiation region as taken in the direction of the scanning may be convex, and that the peak of the intensity distribution lies at a position which is between the front end and rear end of the irradiation region in relation to the scanning direction and which is nearer to the front end with respect to the middle of the irradiation region. The laser beam is so shaped that an intensity at the front end of the irradiation region becomes lower in a range within 30% as compared with the intensity of the peak, and the intensity at the rear end of the irradiation region becomes lower in a range exceeding 5% as compared with the intensity of the peak.
摘要翻译：通过用激光束照射的重叠区域使大面积的半导体薄膜结晶化，得到膜的均匀结晶性。半导体薄膜通过进行成形激光而结晶化，以限定在预定照射区域中具有预定强度分布的激光束，并且在扫描该膜的同时用激光束重复照射半导体薄膜，使得照射区域可以重叠激光束被成形为使得沿扫描方向拍摄的照射区域中的激光束的截面强度分布可以是凸的，并且强度分布的峰值位于在前端和照射区域的相对于扫描方向的后端，并且相对于照射区域的中间更靠近前端。激光束的形状使得照射区域的前端的强度在与峰的强度相比在30％以内的范围内变低，并且照射区域的后端的强度在一定范围内变低与峰值强度相比超过5％。

7. 发明授权

US08969819B2 Radiation image pickup apparatus and method of driving the same 有权
标题翻译：辐射摄像装置及其驱动方法
公开(公告)号：US08969819B2
公开(公告)日：2015-03-03
申请号：US13027328
申请日：2011-02-15
申请人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
发明人： Tsutomu Tanaka , Makoto Takatoku , Yasuhiro Yamada , Ryoichi Ito
IPC分类号： G01T1/24 , H01L29/66 , H01L27/146 , G01T1/20 , H04N5/225 , H04N5/374 , H04N5/378
CPC分类号： H01L27/14676 , G01T1/2018 , H04N5/2251 , H04N5/374 , H04N5/378
摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.
摘要翻译：允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动通过像素晶体管，从而恢复像素晶体管的特性。

8. 发明申请

US20110115767A1 SENSOR DEVICE, METHOD OF DRIVING SENSOR ELEMENT, DISPLAY DEVICE WITH INPUT FUNCTION AND ELECTRONIC APPARATUS 有权
标题翻译：传感器装置，驱动传感器元件的方法，具有输入功能的显示装置和电子装置
公开(公告)号：US20110115767A1
公开(公告)日：2011-05-19
申请号：US12941276
申请日：2010-11-08
申请人： Michiru Senda , Makoto Takatoku , Tsutomu Harada
发明人： Michiru Senda , Makoto Takatoku , Tsutomu Harada
IPC分类号： G09G5/00 , G01J1/42
CPC分类号： G06F3/0412 , G06F3/0418 , G06F3/042
摘要： Techniques are described for detecting and compensating for characteristic changes of a photoelectric conversion element, such as changes related to the temperature of the photoelectric conversion element. A display device that includes an I/O display panel and a light-receiving drive circuit is disclosed. The I/O display panel includes a plurality of display pixels; and a plurality of photoelectric conversion elements including a first photoelectric conversion element that substantially is shielded from light and a second photoelectric conversion element that is exposed to light. The light-receiving drive circuit receives a first detection signal from the first photoelectric conversion element and resets the second photoelectric conversion element based on the first detection signal.
摘要翻译：描述了用于检测和补偿光电转换元件的特性变化的技术，例如与光电转换元件的温度相关的变化。公开了一种包括I / O显示面板和光接收驱动电路的显示装置。 I / O显示面板包括多个显示像素; 以及多个光电转换元件，包括基本上被遮光的第一光电转换元件和暴露于光的第二光电转换元件。光接收驱动电路接收来自第一光电转换元件的第一检测信号，并且基于第一检测信号复位第二光电转换元件。

9. 发明授权

US09312421B2 Photoelectric conversion element and photoelectric converter 有权
标题翻译：光电转换元件和光电转换器
公开(公告)号：US09312421B2
公开(公告)日：2016-04-12
申请号：US13474061
申请日：2012-05-17
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito , Michiru Senda
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L31/105 , H01L31/0216 , H01L27/146
CPC分类号： H01L31/105 , H01L27/14663 , H01L31/02164
摘要： Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.
摘要翻译：本文公开了一种光电转换元件，包括：设置在基板上方的第一导电类型的第一半导体层; 设置在比所述第一半导体层更高层的第二导电类型的第二半导体层; 第三导电类型的第三半导体层，设置在第一和第二半导体层之间，并且导电率低于第一和第二半导体层; 以及设置在所述基板和所述第一半导体层之间的遮光层。

10. 发明授权

US08952477B2 Photoelectric conversion element having a plurality of layered semiconductors and method for manufacturing same 有权
标题翻译：具有多层分层半导体的光电转换元件及其制造方法
公开(公告)号：US08952477B2
公开(公告)日：2015-02-10
申请号：US13196096
申请日：2011-08-02
申请人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
发明人： Yasuhiro Yamada , Tsutomu Tanaka , Makoto Takatoku , Ryoichi Ito
IPC分类号： H01L31/102 , H01L31/0352 , H01L27/146 , H01L31/105
CPC分类号： H01L31/0352 , H01L27/14607 , H01L27/14663 , H01L27/14692 , H01L31/105
摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.
摘要翻译：光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。第三半导体层具有与第一半导体层不接触的至少一个角部。

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