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1. 发明授权

US06693258B2 Process for producing thin film semiconductor device and laser irradiation apparatus 失效
标题翻译：薄膜半导体器件和激光照射设备的制造方法
公开(公告)号：US06693258B2
公开(公告)日：2004-02-17
申请号：US10061392
申请日：2002-02-04
申请人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
发明人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
IPC分类号： H01L2976
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L29/78648 , H01L29/78678
摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.
摘要翻译：通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换成多晶材料。通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜对应于一次的多晶材料的横截面积。此时，控制从升降到下降的激光的能量强度以应用期望的变化。根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。在一些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

2. 发明授权

US06632711B2 Process for producing thin film semiconductor device and laser irradiation apparatus 失效
标题翻译：薄膜半导体器件和激光照射设备的制造方法
公开(公告)号：US06632711B2
公开(公告)日：2003-10-14
申请号：US09731905
申请日：2000-12-08
申请人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
发明人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L29/78648 , H01L29/78678
摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.
摘要翻译：通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换为多晶材料。通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜对应于一次的多晶材料的横截面积。此时，控制从升降到下降的激光的能量强度以应用期望的变化。根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。在某些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

3. 发明授权

US6150692A Thin film semiconductor device for active matrix panel 失效
标题翻译：有源矩阵面板薄膜半导体器件
公开(公告)号：US6150692A
公开(公告)日：2000-11-21
申请号：US274475
申请日：1994-07-13
申请人： Toshihiko Iwanaga , Masumitsu Ino , Kikuo Kaise , Takenobu Urazono , Hiroyuki Ikeda
发明人： Toshihiko Iwanaga , Masumitsu Ino , Kikuo Kaise , Takenobu Urazono , Hiroyuki Ikeda
IPC分类号： H01L21/30 , H01L21/336 , H01L29/786 , H01L29/78
CPC分类号： H01L29/66757 , H01L21/3003 , H01L29/78606 , H01L29/78675
摘要： A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer insulating layer which covers said element,a hydrogenation treatment which comprises said interlayer insulating layer provided thereon a capping layer for blocking hydrogen diffusion, so that water entrapped by the interlayer insulating layer may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the capping layer.
摘要翻译：一种薄膜半导体器件，包括在绝缘衬底上具有薄膜半导体以限定元件区的薄膜晶体管（TFT）和覆盖所述元件的吸湿层间绝缘层，包括设置在其上的所述层间绝缘层的氢化处理用于阻止氢扩散的覆盖层，使得被层间绝缘层截留的水可能被分解，以产生允许扩散到设置在与盖层相反的一侧的薄膜晶体管中的氢。

4. 发明授权

US6015720A Method of forming polycrystalline semiconductor thin film 失效
标题翻译：多晶半导体薄膜的形成方法
公开(公告)号：US6015720A
公开(公告)日：2000-01-18
申请号：US544569
申请日：1995-10-18
申请人： Masahiro Minegishi , Masumitsu Ino , Masafumi Kunii , Takenobu Urazono , Hisao Hayashi
发明人： Masahiro Minegishi , Masumitsu Ino , Masafumi Kunii , Takenobu Urazono , Hisao Hayashi
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/20 , H01L21/205 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/268
CPC分类号： H01L27/1214 , H01L21/2022 , H01L29/66757 , G02F1/13454
摘要： Method of forming a high-quality polycrystalline semiconductor thin film having large grain sizes by laser annealing. First, a film formation step is carried out to grow a semiconductor layer on an insulating substrate under certain film formation conditions, thus forming a precursory film. This precursory film comprises clusters of microscopic crystal grains. Then, an irradiation step is carried out. That is, the precursory film is irradiated with a laser beam such as an excimer laser pulse. The crystal sizes are increased to change the precursory film into a polycrystalline semiconductor thin film. During the film formation step, a precursory film having a crystal grain size of more than 3 nm is formed at a temperature of 500 to 650.degree. C., for example, by LPCVD or APCVD. Under these conditions, the resulting polycrystalline precursory film is substantially free from hydrogen. During the irradiation step, a single pulse of excimer laser radiation is emitted.
摘要翻译：通过激光退火形成具有大晶粒尺寸的高品质多晶半导体薄膜的方法。首先，在某些成膜条件下，进行成膜步骤以在绝缘基板上生长半导体层，从而形成前体膜。该前体膜包含微晶晶粒簇。然后，进行照射步骤。也就是说，用激光束如准分子激光脉冲照射前体膜。增加晶体尺寸以将前体膜改变成多晶半导体薄膜。在成膜步骤中，例如通过LPCVD或APCVD在500至650℃的温度下形成晶粒尺寸大于3nm的前体膜。在这些条件下，所得多晶前体膜基本上不含氢。在照射步骤期间，发射准分子激光辐射的单脉冲。

5. 发明授权

US06248606B1 Method of manufacturing semiconductor chips for display 有权
标题翻译：制造用于显示的半导体芯片的方法
公开(公告)号：US06248606B1
公开(公告)日：2001-06-19
申请号：US09219137
申请日：1998-12-22
申请人： Masumitsu Ino , Hisao Hayashi , Masafumi Kunii , Takenobu Urazono , Shizuo Nishihara , Masahiro Minegishi
发明人： Masumitsu Ino , Hisao Hayashi , Masafumi Kunii , Takenobu Urazono , Shizuo Nishihara , Masahiro Minegishi
IPC分类号： H01L2120
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/2026 , H01L29/66757
摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.
摘要翻译：在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管一个芯片的分段区域。此后，在分割区域内形成一个图像（帧）的像素电极。在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。通过间歇式热处理，促进了半导体薄膜的结晶化。此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。

6. 发明授权

US5932484A Thin film semiconductor device for active matrix panel 失效
标题翻译：有源矩阵面板薄膜半导体器件
公开(公告)号：US5932484A
公开(公告)日：1999-08-03
申请号：US950933
申请日：1997-10-15
申请人： Toshihiko Iwanaga , Masumitsu Ino , Kikuo Kaise , Takenobu Urazono , Hiroyuki Ikeda
发明人： Toshihiko Iwanaga , Masumitsu Ino , Kikuo Kaise , Takenobu Urazono , Hiroyuki Ikeda
IPC分类号： H01L21/30 , H01L21/336 , H01L29/786 , H01L21/331 , H01L21/00
CPC分类号： H01L29/66757 , H01L21/3003 , H01L29/78606 , H01L29/78675 , Y10S438/902
摘要： A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers the element. A hydrogenation treatment which comprises the interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.
摘要翻译：一种薄膜半导体器件，包括在绝缘基板上具有薄膜半导体以限定元件区域的薄膜晶体管（TFT）和覆盖元件的吸湿层间电介质。一种氢化处理，其包括在其上设置用于阻止氢扩散的盖膜的层间电介质，使得被层间电介质捕获的水可能被分解，以产生氢，该氢被允许扩散到设置在与帽膜。

7. 发明授权

US5888839A Method of manufacturing semiconductor chips for display 失效
标题翻译：制造用于显示的半导体芯片的方法
公开(公告)号：US5888839A
公开(公告)日：1999-03-30
申请号：US429613
申请日：1995-04-27
申请人： Masumitsu Ino , Hisao Hayashi , Masafumi Kunii , Takenobu Urazono , Shizuo Nishihara , Masahiro Minegishi
发明人： Masumitsu Ino , Hisao Hayashi , Masafumi Kunii , Takenobu Urazono , Shizuo Nishihara , Masahiro Minegishi
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/268 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L21/2026 , G02F1/13454
摘要： In a method of manufacturing semiconductor chips for display, a semiconductor thin film is first formed on an insulating substrate, and then a series of processes including a heat-treatment process for the semiconductor thin film are carried out to form integrated thin film transistors on a sectioned area for one chip. Thereafter, pixel electrodes for one picture (frame) are formed within the sectioned area. During the series of processes, a laser pulse is irradiated onto the sectioned area by one shot to perform a heat treatment on the semiconductor thin film for one chip collectively and simultaneously (i.e., perform a batch heat treatment on the semiconductor thin film). Through the batch heat treatment, the crystallization of the semiconductor thin film is promoted. In addition, after the semiconductor thin film is doped with impurities, the activation of impurities doped in the semiconductor thin film can be performed by the batch heat treatment.
摘要翻译：在制造用于显示的半导体芯片的方法中，首先在绝缘基板上形成半导体薄膜，然后执行包括半导体薄膜的热处理工艺的一系列工艺，以形成集成的薄膜晶体管一个芯片的分段区域。此后，在分割区域内形成一个图像（帧）的像素电极。在一系列处理中，一次性地将激光脉冲照射到分割区域上，对一个芯片的半导体薄膜进行一次热处理，同时（对半导体薄膜进行分批热处理）。通过间歇式热处理，促进了半导体薄膜的结晶化。此外，在半导体薄膜掺杂杂质之后，可以通过间歇热处理来进行掺杂在半导体薄膜中的杂质的活化。

8. 发明授权

US08421968B2 Liquid crystal display apparatus and electronic apparatus 有权
标题翻译：液晶显示装置及电子设备
公开(公告)号：US08421968B2
公开(公告)日：2013-04-16
申请号：US11850323
申请日：2007-09-05
申请人： Masumitsu Ino
发明人： Masumitsu Ino
IPC分类号： G02F1/1335 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/133555
摘要： Disclosed herein is a liquid crystal display apparatus in which a transmission region and a reflection region disposed in parallel. The apparatus includes first and second substrates and a liquid crystal layer disposed between the first and second substrates. The second substrate has at least a counter electrode, an interlayer insulating film and a pixel electrode for forming a fringe field for driving molecules of the liquid crystal. At least one parameter relating to the interlayer insulating film formed on the second substrate is set different between the transmission region side interlayer insulating film and the reflection region side interlayer insulating film so that driving voltages for the transmission and reflection regions are substantially equal to each other.
摘要翻译：这里公开了一种液晶显示装置，其中平行布置有透射区域和反射区域。该装置包括第一和第二基板和设置在第一和第二基板之间的液晶层。第二基板具有至少对电极，层间绝缘膜和用于形成用于驱动液晶分子的边缘场的像素电极。与在第二基板上形成的层间绝缘膜有关的至少一个参数在透射区域侧层间绝缘膜和反射区域侧层间绝缘膜之间设定为不同，使得透射和反射区域的驱动电压基本相等。

9. 发明授权

US07755723B2 Liquid crystal display device and display apparatus 有权
标题翻译：液晶显示装置及显示装置
公开(公告)号：US07755723B2
公开(公告)日：2010-07-13
申请号：US11948318
申请日：2007-11-30
申请人： Masumitsu Ino
发明人： Masumitsu Ino
IPC分类号： G02F1/1335 , G02F1/1333 , G02F1/1343
CPC分类号： G02F1/133555 , G02F1/133345 , G02F1/133371 , G02F1/133553 , G02F1/134363
摘要： A liquid crystal display device includes: a liquid crystal layer sandwiched between a first substrate and a second substrate; and a reflective display area on the first substrate side, the reflective display area being provided with a common electrode and a pixel electrode having a plurality of slits so as to apply an electric field to the liquid crystal layer, wherein between the first substrate and the pixel electrode, a reflective film and an interlayer insulating film, both films having projecting patterns on a front surface side, are arranged in this order from the first substrate side, and the pixel electrode and the common electrode are arranged so that electric field intensities between the pixel electrode and the common electrode are made equal in the reflective display area.
摘要翻译：液晶显示装置包括：夹在第一基板和第二基板之间的液晶层; 以及第一基板侧的反射显示区域，反射显示区域设置有公共电极和具有多个狭缝的像素电极，以向液晶层施加电场，其中在第一基板和像素电极，反射膜和层间绝缘膜，从第一基板侧依次配置具有表面侧的突出图案的两个膜，并且像素电极和公共电极配置成使得电场强度在像素电极和公共电极在反射显示区域中相等。

10. 发明申请

US20080151156A1 LIQUID CRYSTAL DISPLAY DEVICE AND DISPLAY APPARATUS 有权
标题翻译：液晶显示装置和显示装置
公开(公告)号：US20080151156A1
公开(公告)日：2008-06-26
申请号：US11948318
申请日：2007-11-30
申请人： Masumitsu Ino
发明人： Masumitsu Ino
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/133345 , G02F1/133371 , G02F1/133553 , G02F1/134363
摘要： A liquid crystal display device includes: a liquid crystal layer sandwiched between a first substrate and a second substrate; and a reflective display area on the first substrate side, the reflective display area being provided with a common electrode and a pixel electrode having a plurality of slits so as to apply an electric field to the liquid crystal layer, wherein between the first substrate and the pixel electrode, a reflective film and an interlayer insulating film, both films having projecting patterns on a front surface side, are arranged in this order from the first substrate side, and the pixel electrode and the common electrode are arranged so that electric field intensities between the pixel electrode and the common electrode are made equal in the reflective display area.
摘要翻译：液晶显示装置包括：夹在第一基板和第二基板之间的液晶层; 以及第一基板侧的反射显示区域，反射显示区域设置有公共电极和具有多个狭缝的像素电极，以向液晶层施加电场，其中在第一基板和像素电极，反射膜和层间绝缘膜，从第一基板侧依次配置具有表面侧的突出图案的两个膜，并且像素电极和公共电极配置成使得电场强度像素电极和公共电极在反射显示区域中相等。

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