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    • 5. 发明授权
    • Display and method for manufacturing display
    • 显示器和制造显示方法
    • US08619208B2
    • 2013-12-31
    • US12530801
    • 2008-09-18
    • Dharam Pal GosainTsutomu TanakaMakoto Takatoku
    • Dharam Pal GosainTsutomu TanakaMakoto Takatoku
    • G02F1/136G02F1/13
    • H01L27/1222G02F1/1368G02F2001/13312G06F3/0412G06F3/0421H01L27/1214H01L27/124H01L29/66765
    • In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.
    • 在同一衬底上形成开关元件和光传感器元件的情况下,为了提高光传感器元件的灵敏度,活性层的膜厚度的增加将不利地影响开关元件(TFT)的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素,光电转换层35形成为比沟道层25厚,和/或光电转换层35由与沟道层材料不同的材料形成 25,由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。
    • 8. 发明申请
    • DISPLAY AND METHOD FOR MANUFACTURING DISPLAY
    • 显示器和制造显示器的方法
    • US20100171120A1
    • 2010-07-08
    • US12530801
    • 2008-09-18
    • Dharam Pal GosainTsutomu TanakaMakoto Takatoku
    • Dharam Pal GosainTsutomu TanakaMakoto Takatoku
    • H01L33/08H01L21/28
    • H01L27/1222G02F1/1368G02F2001/13312G06F3/0412G06F3/0421H01L27/1214H01L27/124H01L29/66765
    • In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.
    • 在同一衬底上形成开关元件和光传感器元件的情况下,为了提高光传感器元件的灵敏度,活性层的膜厚度的增加将不利地影响开关元件(TFT)的特性。 在用于构成用于像素的开关元件的薄膜晶体管的沟道层25和用于构成光传感器元件的光电转换层35的显示器的配置设置在玻璃基板5上的栅极绝缘膜24上 设置有以矩阵图案排列的多个像素,光电转换层35形成为比沟道层25厚,和/或光电转换层35由与沟道层材料不同的材料形成 25,由此使光电转换层35的光吸收系数高于沟道层25的光吸收系数。