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1. 发明授权

US07716961B2 Method for executing water jet peening 有权
标题翻译：执行喷水喷丸的方法
公开(公告)号：US07716961B2
公开(公告)日：2010-05-18
申请号：US12198951
申请日：2008-08-27
申请人： Hisamitu Hatou , Noboru Saitou , Ren Morinaka , Tomohiko Motoki , Tadashi Iijima , Yuichi Koide , Jun Kashiwakura
发明人： Hisamitu Hatou , Noboru Saitou , Ren Morinaka , Tomohiko Motoki , Tadashi Iijima , Yuichi Koide , Jun Kashiwakura
IPC分类号： B24C1/10 , B21D41/00
CPC分类号： C21D7/04 , C21D1/06 , C21D7/06
摘要： A method for executing water jet peening for giving an impact force to a surface of a structure member by a crushing pressure of a water jet and cavitation and improving residual stress, or washing, or reforming said surface,wherein said water jet peening is executed so as to make a natural frequency of oscillation of said structure member and a excitation frequency of oscillation of water jet peening different from each other.
摘要翻译：一种执行喷水喷丸处理的方法，其通过水射流和气蚀的破碎压力向结构构件的表面施加冲击力，并改善残余应力或洗涤或重整所述表面，其中所述喷水喷丸处理以使所述结构构件的固有振荡频率和水喷射喷丸的振荡的激发频率彼此不同。

2. 发明申请

US20130164182A1 REDUCING AGENT AQUEOUS SOLUTION MIXING DEVICE AND EXHAUST GAS POST-TREATMENT DEVICE 有权
标题翻译：还原剂水溶液混合装置和排气后处理装置
公开(公告)号：US20130164182A1
公开(公告)日：2013-06-27
申请号：US13696293
申请日：2012-04-18
申请人： Tadashi Iijima , Hirofumi Kizawa , Boku Itou , Shinji Tsujimura , Takashi Katou , Tetsuo Orita , Kanji Namimatsu , Issei Hara , Hiroyuki Tomioka
发明人： Tadashi Iijima , Hirofumi Kizawa , Boku Itou , Shinji Tsujimura , Takashi Katou , Tetsuo Orita , Kanji Namimatsu , Issei Hara , Hiroyuki Tomioka
IPC分类号： F01N3/28
CPC分类号： F01N3/2882 , B01D53/90 , B01D53/9431 , B01D2251/2067 , B01F3/04049 , B01F5/0473 , B01F5/0485 , B01F5/0498 , B01F5/0659 , B01F2005/0091 , F01N3/035 , F01N3/2066 , F01N3/208 , F01N3/2892 , F01N13/009 , F01N13/08 , F01N2240/20 , F01N2470/16 , F01N2610/02 , F01N2610/1453 , Y02T10/24
摘要： A reducing agent aqueous solution mixing device includes an exhaust pipe, an injector, a mixing pipe and an inner pipe. The exhaust pipe includes an elbow part having a curved portion, and a linear part disposed on the downstream side of the elbow part. The injector is disposed outside the curved portion and injects the reducing agent aqueous solution towards the linear part. The mixing pipe is disposed inside the elbow part to enclose a surrounding of the reducing agent aqueous solution injected from the injector, and includes a plurality of openings on an outer peripheral surface thereof. The inner pipe is disposed on the downstream side of the mixing pipe and spaced apart from an outlet portion of the mixing pipe and from an inner wall of the linear part, and allows the exhaust gas to flow through the inside thereof and the outer periphery thereof.
摘要翻译：还原剂水溶液混合装置包括排气管，喷射器，混合管和内管。排气管包括具有弯曲部的弯头部和设置在弯头部的下游侧的直线部。注射器设置在弯曲部分的外侧，并将还原剂水溶液注入线性部分。混合管设置在肘部内部以包围从注射器注入的还原剂水溶液的周围，并且在其外周表面上包括多个开口。内管配置在混合管的下游侧，与混合管的出口部分和直线部分的内壁间隔开，并允许废气流过其内部和外周。

3. 发明授权

US08372682B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08372682B2
公开(公告)日：2013-02-12
申请号：US13346034
申请日：2012-01-09
申请人： Tadashi Iijima
发明人： Tadashi Iijima
IPC分类号： H01L31/0232
CPC分类号： H01L27/1464 , H01L21/76898 , H01L23/481 , H01L27/14687 , H01L27/1469 , H01L2924/0002 , H01L2924/00
摘要： In a method for manufacturing a semiconductor device according to an embodiment, a trench is formed in an outer peripheral portion of a chip region on a bonding surface of a support substrate, and a semiconductor substrate having a chip ring in the outer peripheral portions of the chip regions on an inside of a dicing line respectively and the support substrate are bonded to position the trench from above the chip ring to the inside of the dicing line. In the method for manufacturing a semiconductor device, furthermore, the semiconductor substrate and the support substrate which are bonded to each other are subjected to dicing along the dicing line.
摘要翻译：在根据实施例的半导体器件的制造方法中，在支撑基板的接合表面上的芯片区域的外周部分形成有沟槽，并且在其外周部分中形成有具有芯片环的半导体基板分别在切割线的内侧的芯片区域和支撑基板被接合以将沟槽从芯片环的上方定位到切割线的内部。此外，在制造半导体器件的方法中，将彼此接合的半导体衬底和支撑衬底沿着切割线进行切割。

4. 发明申请

US20120028463A1 MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20120028463A1
公开(公告)日：2012-02-02
申请号：US13267048
申请日：2011-10-06
申请人： Tatsuo Migita , Hirokazu Ezawa , Tadashi Iijima , Takashi Togasaki
发明人： Tatsuo Migita , Hirokazu Ezawa , Tadashi Iijima , Takashi Togasaki
IPC分类号： H01L21/768
CPC分类号： H01L23/525 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L25/18 , H01L2224/0401 , H01L2224/05548 , H01L2224/13027 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14051 , H01L2225/06513 , H01L2225/06527 , H01L2225/06568 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/30105
摘要： A first conducting layer is formed on a side of a main surface on which an electrode terminal of a semiconductor device is provided in a semiconductor substrate. The first conducting layer is electrically connected to the electrode terminal of the semiconductor device. A mask layer that has an opening at a predetermined position is formed on the first conducting layer. A second conducting layer is formed inside the opening of the mask layer. The mask layer is removed. A relocation wiring that includes the first conducting layer and electrically draws out the electrode terminal is formed by performing anisotropic etching for the first conducting layer using the second conducting layer as a mask. Finally, a bump is formed on the relocation wiring by causing the second conducting layer to reflow.
摘要翻译：第一导电层形成在半导体衬底中设置半导体器件的电极端子的主表面的一侧。第一导电层电连接到半导体器件的电极端子。在第一导电层上形成有在预定位置具有开口的掩模层。在掩模层的开口内形成第二导电层。去除掩模层。通过使用第二导电层作为掩模对第一导电层进行各向异性蚀刻，形成包括第一导电层并电拔出电极端子的重定位布线。最后，通过使第二导电层回流而在位移配线上形成凸点。

5. 发明申请

US20070197024A1 Interconnect structure and method for semiconductor device 有权
标题翻译：半导体器件的互连结构和方法
公开(公告)号：US20070197024A1
公开(公告)日：2007-08-23
申请号：US11356146
申请日：2006-02-17
申请人： Yoshiaki Shimooka , Tadashi Iijima
发明人： Yoshiaki Shimooka , Tadashi Iijima
IPC分类号： H01L21/4763
CPC分类号： H01L21/76801 , H01L21/7688
摘要： An interconnect method in a semiconductor device may include a step of examining various regions of an inter layer dielectric to identify regions having high densities or concentrations of trench features. A cap insulator layer may be added to the dielectric to assist in outgassing of absorbed impurities from the dielectric, but may be removed from the high density areas to allow the lower density areas to increase outgassing. The lower density areas may then compensate for increased outgassing on the high density areas due to the trench features, and may result in an overall device with a more stable dielectric constant across the device.
摘要翻译：半导体器件中的互连方法可以包括检查层间电介质的各个区域以识别具有高密度或沟槽特征的浓度的区域的步骤。可以将绝缘体层添加到电介质中以有助于从电介质中除去吸收的杂质，但是可以从高密度区域移除，以允许较低密度区域增加除气。然后，由于沟槽特征，较低密度区域可以补偿在高密度区域上的增加的放气，并且可能导致整个器件在整个器件上具有更稳定的介电常数。

6. 发明申请

US20060124103A1 Direct injection diesel engine 有权
标题翻译：直喷柴油发动机
公开(公告)号：US20060124103A1
公开(公告)日：2006-06-15
申请号：US11345761
申请日：2006-02-02
申请人： Yutaka Ono , Tadashi Iijima , Masaki Takahashi
发明人： Yutaka Ono , Tadashi Iijima , Masaki Takahashi
IPC分类号： F02F3/26
CPC分类号： F02B23/0693 , F02B3/06 , F02B23/0651 , F02B23/0669 , F02B23/0672 , F02B23/0696 , F02B2275/14 , F02F3/26 , Y02T10/123 , Y02T10/125
摘要： A combustion chamber opening toward a cylinder head is provided on a top surface of a piston, and this combustion chamber comprises a first volume having an inclined surface and a second volume further recessed from the first volume toward a pin boss. Fuel spray F from a fuel injection nozzle is injected toward an inner peripheral wall section of the second volume in a former stage of fuel injection and toward the inclined surface of the first volume in a later stage of fuel injection, and the percentage of the fuel injection period in the former stage against the total fuel injection period is set to the range from 40% to 70%.
摘要翻译：朝向气缸盖开口的燃烧室设置在活塞的顶表面上，并且该燃烧室包括具有倾斜表面的第一容积和从第一容积进一步朝向销凸起凹进的第二体积。来自燃料喷射喷嘴的燃料喷雾F在燃料喷射的前一阶段朝向第二容积的内周壁部喷射，并且在燃料喷射的后期朝向第一容积的倾斜表面喷射，并且燃料的百分比前期燃料喷射期间的喷射周期设定在40％〜70％的范围内。

7. 发明申请

US20050054190A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050054190A1
公开(公告)日：2005-03-10
申请号：US10920387
申请日：2004-08-18
申请人： Tadashi Iijima
发明人： Tadashi Iijima
IPC分类号： H01L23/52 , H01L21/312 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L24/05 , H01L21/02126 , H01L21/3124 , H01L23/5329 , H01L23/53295 , H01L24/03 , H01L2224/02166 , H01L2224/04042 , H01L2224/05006 , H01L2224/05093 , H01L2224/05546 , H01L2224/05554 , H01L2224/05556 , H01L2224/05567 , H01L2224/05624 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/05042 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2224/05552
摘要： Disclosed is a semiconductor device comprising a substrate, a first region provided on the substrate and comprising a first insulating portion which includes an insulating film having a relative dielectric constant of at most 3.0 and a conductive portion which is provided in the first insulating portion, a second region provided on the substrate, located adjacent to the first region in a direction parallel to a major surface of the substrate and comprising a second insulating portion which is located adjacent to the first insulating portion in the direction and which includes no insulating film having a relative dielectric constant of at most 3.0, and a pad provided on the second region and electrically connected to the conductive portion.
摘要翻译：公开了一种半导体器件，包括：衬底，设置在衬底上的第一区域，包括第一绝缘部分，其包括相对介电常数至多为3.0的绝缘膜和设置在第一绝缘部分中的导电部分，第二区域，设置在所述基板上，在与所述基板的主表面平行的方向上与所述第一区域相邻地设置，并且包括在所述方向上位于所述第一绝缘部分附近的第二绝缘部，并且不包括具有相对介电常数至多为3.0，以及设置在第二区域上并与导电部分电连接的焊盘。

8. 发明授权

US06750143B1 Method for forming a plating film, and device for forming the same 失效
标题翻译：镀膜的形成方法及其形成装置
公开(公告)号：US06750143B1
公开(公告)日：2004-06-15
申请号：US09370888
申请日：1999-08-10
申请人： Tadashi Iijima , Tetsuo Matsuda
发明人： Tadashi Iijima , Tetsuo Matsuda
IPC分类号： H01L2144
CPC分类号： H01L21/288 , C23C18/1632 , C23C18/1651 , C23C18/1893 , H01L21/76877
摘要： A desired plating film is formed on a surface of a substrate to be treated by performing a film-depositing step based on electroless plating and an etching step alternately and repeatedly. In the film-depositing step, an electroless plating solution is supplied from a nozzle to the surface of the substrate. In the etching step, an etching solution is supplied from a nozzle to the surface of the substrate.
摘要翻译：通过交替地重复地进行基于无电解电镀和蚀刻步骤的成膜步骤，在待处理的基板的表面上形成期望的镀膜。在成膜步骤中，将无电镀液从喷嘴供给到基板的表面。在蚀刻步骤中，将蚀刻溶液从喷嘴供给到基板的表面。

9. 发明授权

US5903053A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5903053A
公开(公告)日：1999-05-11
申请号：US677397
申请日：1996-07-09
申请人： Tadashi Iijima , Hisako Ono , Kyoichi Suguro , Yasushi Akasaka , Shinichi Nakamura
发明人： Tadashi Iijima , Hisako Ono , Kyoichi Suguro , Yasushi Akasaka , Shinichi Nakamura
IPC分类号： H01L21/28 , H01L21/3205 , H01L23/52 , H01L29/45 , H01L29/49 , H01L29/78 , H01L23/48 , H01L29/40
CPC分类号： H01L29/4975 , H01L29/45 , H01L29/4933 , H01L29/4941 , H01L29/495 , H01L29/7833 , H01L2924/0002
摘要： A semiconductor device comprising a conductive layer and an amorphous alloy layer formed on the bottom surface of said conductive layer and acting as a barrier layer. The conductive layer is either an electrode layer or a wiring layer. The amorphous alloy layer is made of a matrix phase and microcrystal grains. The matrix phase consists mainly of a Ti--Si--N amorphous alloy. The microcrystal grains are dispersed in the matrix phase, not continuously arranged in the direction of thickness of the amorphous alloy layer.
摘要翻译：一种半导体器件，包括形成在所述导电层的底表面上并用作阻挡层的导电层和非晶态合金层。导电层是电极层或布线层。非晶合金层由基体相和微晶粒构成。基体相主要由Ti-Si-N非晶合金组成。微晶粒分散在基体相中，不是沿非晶合金层的厚度方向连续排列。

10. 发明授权

US4108337A Quantitative supply apparatus of powder coloring agent 失效
标题翻译：粉末着色剂定量供应装置
公开(公告)号：US4108337A
公开(公告)日：1978-08-22
申请号：US731581
申请日：1976-10-12
申请人： Tadashi Iijima
发明人： Tadashi Iijima
IPC分类号： B29C31/00 , B29B7/00 , B29B9/00 , B29C31/02 , B29C45/18 , B29C47/00 , B29C47/10 , B29C47/92 , B65D83/06 , B67D5/54
CPC分类号： B29C45/1816
摘要： The quantitative supply apparatus of powder coloring agent can measure the powder coloring agent through a measuring groove provided on a rotary shaft and supply it directly to the raw material inlet opening of an injection moulding machine. The measuring groove on the rotary shaft can be adjustably changed properly in volume along a length direction. A container for the coloring agent is disposed on the top portion thereof and a hole in the bottom portion of the container is in contact, in a location covering the measuring groove, with the top portion of the rotary shaft. The coloring agent which has dropped from the measuring groove through the rotation of the rotary shaft is adapted to be introduced to the inlet opening of an ejector, and furthermore to the be supplied out of an exhaust side of the ejector to the inlet opening of the injection moulding machine through compressed air.
摘要翻译：粉末着色剂的定量供给装置可以通过设置在旋转轴上的测量槽来测量粉末着色剂，并将其直接供应到注射成型机的原料入口。旋转轴上的测量槽可以沿长度方向适当地适当地改变体积。用于着色剂的容器设置在其顶部，并且容器的底部中的孔在覆盖测量槽的位置与旋转轴的顶部接触。通过旋转轴的旋转从测量凹槽落下的着色剂适于被引入到喷射器的入口开口，并且进一步从喷射器的排气侧供给到喷射器的入口注塑机通过压缩空气。

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