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1. 发明授权

US06795471B2 Group III nitride compound semiconductor laser and manufacturing method thereof 失效
标题翻译： III族氮化物半导体激光器及其制造方法
公开(公告)号：US06795471B2
公开(公告)日：2004-09-21
申请号：US10117095
申请日：2002-04-08
申请人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
发明人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/221 , H01S5/2216 , H01S5/222 , H01S5/2222 , H01S2301/18 , H01S2304/00
摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.
摘要翻译：驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

2. 发明授权

US06259122B1 Group III nitride semiconductor light-emitting device having anticracking feature 有权
标题翻译： III族氮化物半导体发光器件具有抗撬性能
公开(公告)号：US06259122B1
公开(公告)日：2001-07-10
申请号：US09368535
申请日：1999-08-04
申请人： Hiroyuki Ota , Toshiyuki Tanaka , Atsushi Watanabe
发明人： Hiroyuki Ota , Toshiyuki Tanaka , Atsushi Watanabe
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01S5/32341
摘要： In a semiconductor light-emitting device having a multilayered structure which consists essentially of layers of Group III nitride semiconductors (AlxGa1−x) 1−yInyN (0≦x≦1, 0≦y≦1) which are different from each other in chemical composition ratio, generation of cracks at an interface propagating from an interface between adjacent layers is prevented. Two adjacent layers within the multilayered structure, which include a lower layer having a lattice constant larger than a lattice constant of an upper layer of the two adjacent layers, have a portion close to the interface of the two adjacent layers doped such that an element different from the Group III nitride semiconductors is added in a higher concentration, i.e. in a higher distribution density than in other portions thereof.
摘要翻译：在具有多层结构的半导体发光器件中，其基本上由III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1）彼此之间的化学组成比，防止了从相邻层之间的界面传播的界面产生裂纹。多层结构中的两个相邻层，其包括具有大于两个相邻层的上层的晶格常数的晶格常数的下层，具有靠近所述两个相邻层的界面的部分，所述界面被掺杂，使得元件不同从III族氮化物半导体中加入更高的浓度，即比其它部分更高的分布密度。

3. 发明授权

US5274251A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US5274251A
公开(公告)日：1993-12-28
申请号：US725684
申请日：1991-07-03
申请人： Hiroyuki Ota , Atsushi Watanabe
发明人： Hiroyuki Ota , Atsushi Watanabe
IPC分类号： H01S5/00 , H01S5/02 , H01S5/323 , H01L49/00 , H01L29/161 , H01L29/205 , H01L33/00
CPC分类号： H01S5/32341 , H01S5/0218
摘要： A semiconductor light emitting element with a high light-emitting efficiency, which is constituted in such a way that, of the composition of its GaN and AlN epitaxial layer, part of N is substituted by P, thus ensuring good lattice-matching with the substrate crystal, ZnO.

4. 发明授权

US5173751A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5173751A
公开(公告)日：1992-12-22
申请号：US736471
申请日：1991-07-26
申请人： Hiroyuki Ota , Atsushi Watanabe
发明人： Hiroyuki Ota , Atsushi Watanabe
IPC分类号： H01L33/00 , H01L33/32 , H01S5/02 , H01S5/323
CPC分类号： H01L33/32 , H01L33/007 , H01S5/32341 , H01S5/0218
摘要： A semiconductor light emitting device has an epitaxial layer of which lattice match with a substrate crystal is made. The epitaxial layer is formed of mixed crystals of a plurality of Group III-V compound semiconductors on the substrate formed of a crystal of ZnO. More particularly, the expitaxial layer is formed of:Al.sub.x Ga.sub.1-X-Y In.sub.Y N (0.ltoreq.X

5. 发明授权

US06442184B1 Nitride-based semiconductor light emitting device and manufacturing method therefor 有权
标题翻译：氮化物系半导体发光元件及其制造方法
公开(公告)号：US06442184B1
公开(公告)日：2002-08-27
申请号：US09459471
申请日：1999-12-13
申请人： Hiroyuki Ota , Atsushi Watanabe , Toshiyuki Tanaka
发明人： Hiroyuki Ota , Atsushi Watanabe , Toshiyuki Tanaka
IPC分类号： H01S500
CPC分类号： H01L33/007 , H01L33/22 , H01S5/0213 , H01S5/3202 , H01S5/32341
摘要： A semiconductor light emitting device having multi-layer structure of group-3 nitride-based semiconductors is disclosed. The light emitting device has lower density of threading dislocation extending from a boundary of a crystal substrate through the multi-layer structure, thereby obtaining good luminescence characteristics. The nitride semiconductor light emitting device has the multi-layer structure. The multi-layer structure comprises a first crystal layer containing substantially pyramidal crystal grains, each of grains has a crystal face non-parallel to a surface of the substrate, and the pyramidal crystal grains are distributed at random like islands. The structure further comprises a second crystal layer formed on the first crystal layer with a compound having a different lattice constant from that of the first crystal layer. The second crystal layer smoothes a surface of the first crystal layer parallel to the surface of the substrate.
摘要翻译：公开了一种具有III族氮化物基半导体的多层结构的半导体发光器件。发光器件具有从晶体衬底的边界通过多层结构延伸的穿透位错的较低密度，从而获得良好的发光特性。氮化物半导体发光器件具有多层结构。多层结构包括含有大致锥形晶粒的第一晶体层，每个晶粒具有不平行于衬底表面的晶面，并且金字塔形晶粒以岛状随机分布。该结构还包括在第一晶体层上形成具有与第一晶体层不同的晶格常数的化合物的第二晶体层。第二晶体层使平行于衬底表面的第一晶体层的表面平滑。

6. 发明授权

US06555846B1 Method for manufacturing a nitride semiconductor device and device manufactured by the method 有权
标题翻译：用于制造氮化物半导体器件的方法和通过该方法制造的器件
公开(公告)号：US06555846B1
公开(公告)日：2003-04-29
申请号：US09589076
申请日：2000-06-08
申请人： Atsushi Watanabe , Toshiyuki Tanaka , Hiroyuki Ota
发明人： Atsushi Watanabe , Toshiyuki Tanaka , Hiroyuki Ota
IPC分类号： H01L2922
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02579 , H01L33/007 , H01L33/12 , H01L33/32 , H01S5/32341 , H01S2304/04
摘要： A group III nitride semiconductor device is disclosed which has a reduced number of threading dislocations adversely affecting characteristics of the group III nitride semiconductor device. A method for manufacturing the group III nitride semiconductor device controls pit formation in a GaN layer formed on a sapphire substrate. First, a low temperature buffer layer is formed on a sapphire substrate by MOCVD. An undoped GaN layer having a predetermined thickness is then grown on the low temperature buffer layer. Next, a GaN layer containing magnesium as a dopant is formed on the layer at a lower pressure than that of depositing the GaN layer, which results in filling pits generated on the GaN layer to flatten the surface of another GaN layer.
摘要翻译：公开了III族氮化物半导体器件，其具有不利地影响III族氮化物半导体器件的特性的穿透位错数量减少。制造III族氮化物半导体器件的方法控制在蓝宝石衬底上形成的GaN层中的凹坑形成。首先，通过MOCVD在蓝宝石衬底上形成低温缓冲层。然后在低温缓冲层上生长具有预定厚度的未掺杂的GaN层。接下来，在该层上形成含有镁作为掺杂剂的GaN层，其压力低于沉积GaN层的压力，这导致填充在GaN层上产生的凹坑以使另一GaN层的表面变平。

7. 发明授权

US06365921B1 Gallium-nitride-based semiconductor light emitting device and fabrication method 有权
标题翻译：氮化镓基半导体发光器件及其制造方法
公开(公告)号：US06365921B1
公开(公告)日：2002-04-02
申请号：US09593144
申请日：2000-06-14
申请人： Atsushi Watanabe , Toshiyuki Tanaka , Hiroyuki Ota
发明人： Atsushi Watanabe , Toshiyuki Tanaka , Hiroyuki Ota
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/0262
摘要： A GaN-based semiconductor light emitting device is provided that has superior light emitting characteristics by controlling occurrence of a threading dislocation and keeping the flatness of a film GaN-based semiconductor light emitting device fabrication method comprises forming steps of at least forming an undoped gallium-nitride underlying layer on a low-temperature buffer layer while keeping the pressure in a reactor at a value close to atmospheric pressure.
摘要翻译：提供了一种GaN基半导体发光器件，其通过控制穿透位错的发生并保持膜的平坦度而具有优异的发光特性。GaN基半导体发光器件制造方法包括形成至少形成未掺杂的镓 - 同时将反应器中的压力保持在接近大气压的值，在低温缓冲层上形成氮化物底层。

8. 发明授权

US5834326A Process for producing a luminous element of group III nitride semi-conductor 失效
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US5834326A
公开(公告)日：1998-11-10
申请号：US763779
申请日：1996-12-11
申请人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
发明人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/12 , H01L33/32 , H01L33/36 , H01S5/00 , H01S5/323 , H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325 , Y10S148/065 , Y10S148/113
摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.
摘要翻译：一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

9. 发明申请

US20140042566A1 MECHANICAL QUANTITY MEASURING DEVICE, SEMICONDUCTOR DEVICE, EXFOLIATION DETECTING DEVICE, AND MODULE 审中-公开
标题翻译：机械量子测量装置，半导体器件，检测装置和模块
公开(公告)号：US20140042566A1
公开(公告)日：2014-02-13
申请号：US14112626
申请日：2011-04-21
申请人： Hiroyuki Ota , Kisho Ashida , Kentaro Miyajima
发明人： Hiroyuki Ota , Kisho Ashida , Kentaro Miyajima
IPC分类号： H01L41/04
CPC分类号： H01L41/04 , G01B7/18 , G01L1/2206 , G01L1/2293 , G01M5/0033 , G01M5/0083
摘要： A mechanical quantity measuring device (100) includes a semiconductor substrate (1) attached to a measured object so as to indirectly measure the mechanical quantity acting on the measured object; a measuring portion (7) capable of measuring a mechanical quantity acting on the semiconductor substrate (1) at a central part (1c) of the semiconductor substrate (1); and plural impurity diffused resistors (3a, 3b, 4a, 4b) forming a group (5) gathering closely to each other in at least one place, on an outer peripheral part (1e) outside the central part (1c) of the semiconductor substrate (1). The plural impurity diffused resistors (3a, 3b, 4a, 4b) forming one of the group (5) are connected to each other to form a Wheatstone bridge (2a, 2b). Thus, the mechanical quantity measuring device (100) can securely detect its own exfoliation.
摘要翻译：机械量测量装置（100）包括安装在测量对象上的半导体衬底（1），以间接地测量作用在测量对象上的机械量; 能够测量在半导体衬底（1）的中心部分（1c）处作用在半导体衬底（1）上的机械量的测量部分（7）; 以及在半导体基板的中心部分（1c）的外侧的外周部（1e）上形成形成在至少一个位置上彼此紧密聚集的组（5）的多个杂质扩散电阻器（3a，3b，4a，4b）（1）。形成组（5）中的一个的多个杂质扩散电阻器（3a，3b，4a，4b）彼此连接以形成惠斯通电桥（2a，2b）。因此，机械量测量装置（100）可以安全地检测其自身的剥离。

10. 发明授权

US07803471B1 Magnetic tape, its cleaning method, and optical servotrack forming/cleaning apparatus 有权
标题翻译：磁带，其清洁方法和光学伺服轨道成形/清洁装置
公开(公告)号：US07803471B1
公开(公告)日：2010-09-28
申请号：US10343432
申请日：2001-12-28
申请人： Hiroyuki Ota , Haruhiko Fujisawa , Naoki Mukai , Satoru Fukiage , Kenji Sano , Shigeo Fujitani
发明人： Hiroyuki Ota , Haruhiko Fujisawa , Naoki Mukai , Satoru Fukiage , Kenji Sano , Shigeo Fujitani
IPC分类号： G11B5/706
CPC分类号： G11B5/735 , G11B5/584 , G11B5/78 , G11B23/502
摘要： A magnetic tape which comprises a nonmagnetic support, a magnetic layer which is formed on one surface of the nonmagnetic support, and a backcoat layer which comprises a binder and nonmagnetic powder containing carbon black as a component and which is formed on the other surface of the nonmagnetic support, having pits for optical servo formed thereon, characterized in that the average of the reflectance on the flat portion of the backcoat layer is 8.5% or higher, and that the maximum rate of fluctuation of the reflectance on the flat portion, depending on a position of the magnetic tape: [Maximum of absolute value of (Reflectance−Average reflectance)]×100/(Average reflectance) is 10% or lower. This magnetic tape is high in the initial S/N of the servo signal, and also high in the S/N of the servo signal found after the magnetic tape is run twice.
摘要翻译：一种磁带，其包括非磁性载体，形成在非磁性载体的一个表面上的磁性层，以及背涂层，其包含粘合剂和含有炭黑作为组分的非磁性粉末，并形成在所述非磁性载体的另一个表面上非磁性支撑件，其上形成有用于光学伺服的凹坑，其特征在于，背涂层的平坦部分上的反射率的平均值为8.5％以上，平坦部分的反射率的最大波动率取决于磁带的位置：[反射率平均反射率的绝对值的最大值]×100 /（平均反射率）为10％以下。该磁带在伺服信号的初始S / N高，并且在磁带运行两次之后发现的伺服信号的S / N也较高。

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