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1. 发明授权

US5834326A Process for producing a luminous element of group III nitride semi-conductor 失效
标题翻译： III族氮化物半导体发光元件的制造方法
公开(公告)号：US5834326A
公开(公告)日：1998-11-10
申请号：US763779
申请日：1996-12-11
申请人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
发明人： Mamoru Miyachi , Toshiyuki Tanaka , Yoshinori Kimura , Hirokazu Takahashi , Hitoshi Sato , Atsushi Watanabe , Hiroyuki Ota , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/12 , H01L33/32 , H01L33/36 , H01S5/00 , H01S5/323 , H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/325 , Y10S148/065 , Y10S148/113
摘要： A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.
摘要翻译：一种用于制造半导体具有晶体层（的AlxGa1-x）的1-yInyN（0

2. 发明授权

US06795471B2 Group III nitride compound semiconductor laser and manufacturing method thereof 失效
标题翻译： III族氮化物半导体激光器及其制造方法
公开(公告)号：US06795471B2
公开(公告)日：2004-09-21
申请号：US10117095
申请日：2002-04-08
申请人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
发明人： Atsushi Watanabe , Yoshinori Kimura , Hiroyuki Ota , Toshiyuki Tanaka , Hirokazu Takahashi , Mamoru Miyachi , Atsuya Ito
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/0213 , H01S5/0224 , H01S5/221 , H01S5/2216 , H01S5/222 , H01S5/2222 , H01S2301/18 , H01S2304/00
摘要： A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa1-x)1-yInyN (0≦x≦1, 0≦y≦1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Alx′Ga1-x′-y′Iny′N (0≦x′≦1, 0≦y′≦1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Alx″Ga1-x″-y″Iny″N (0≦x″≦1, 0≦y″≦1) and deposited filling the aperture of the current constricting layer, and a clad layer made of AluGa1-u-vInvN (0≦u≦1, 0≦v≦1) and deposited on the electrode-side guide layer.
摘要翻译：驱动电压低且横向模式稳定的氮化物化合物半导体激光器具有由式（AlGa1-x）1-yInyN（0≤...）表示的由III族氮化物化合物半导体构成的多个晶体层， x <= 1，0 <= y <= 1）。这些层包括与III族氮化物化合物半导体的晶体层中的有源层相邻的有源层侧引导层，由Al x Ga 1-x'-y'In y'N（0 <= x' = 1,0 <= y'<= 1），沉积在所述引导层上并具有条形孔的电流收缩AlN层，由Al x''Ga 1-x“y”形成的电极侧引导层， “Iny''N（0 <= x”<= 1,0,0 <= y“<= 1），并填充电流收缩层的孔径，以及由AluGa1-u-vInvN（0 <= u <= 1，0 <= v <= 1）并沉积在电极侧引导层上。

3. 发明申请

US20060081860A1 Group III nitride semiconductor light-emitting element and method of manufacturing the same 审中-公开
标题翻译： III族氮化物半导体发光元件及其制造方法
公开(公告)号：US20060081860A1
公开(公告)日：2006-04-20
申请号：US10530322
申请日：2003-09-29
申请人： Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura , Mamoru Miyachi
发明人： Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura , Mamoru Miyachi
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/025 , H01L33/32 , H01S5/3086 , H01S5/309 , H01S2301/173 , H01S2301/18
摘要： A Group III nitride semiconductor light-emitting element includes a crack-preventing layer 15 of n-type GaN provided between a n-type contact layer 4A and a n-type clad layer 5A, wherein the crack-preventing layer 15 has a dopant concentration lower than that of the n-type contact layer 4A.
摘要翻译： III族氮化物半导体发光元件包括设置在n型接触层4A和n型覆盖层5A之间的n型GaN的防裂层15，其中防裂层15具有掺杂剂浓度低于n型接触层4A的掺杂浓度。

4. 发明授权

US07079563B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07079563B2
公开(公告)日：2006-07-18
申请号：US10743944
申请日：2003-12-24
申请人： Mamoru Miyachi , Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura
发明人： Mamoru Miyachi , Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01L2224/48463 , H01S5/0202 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/22 , H01S5/4043 , H01S5/4087
摘要： An improved semiconductor laser device is provided which has a small distance between laser light emitting spots. Such laser device comprises i) a first light emitting element including a laser oscillation section provided with a ridge waveguide and formed by forming a group-III nitride semiconductor film on a substrate, an insulating layer and an ohmic electrode layer, ii) a second light emitting element including a laser oscillation section provided with a waveguide and formed by forming III–V compound semiconductor film, an insulating layer and an ohmic electrode layer. By virtue of the adhesive metal layer interposed between the two ohmic electrode layers, the two laser oscillation sections are combined together, thereby forming the improved semiconductor laser device which has a small distance between laser light emitting spots of the two laser oscillation sections.
摘要翻译：提供了一种在激光发光点之间具有小距离的改进的半导体激光器件。这种激光装置包括：i）第一发光元件，其包括设置有脊波导的激光振荡部，并且通过在基板上形成III族氮化物半导体膜，形成绝缘层和欧姆电极层，ii）第二光包括设置有波导并通过形成III-V化合物半导体膜，绝缘层和欧姆电极层形成的激光振荡部的发光元件。通过插入在两个欧姆电极层之间的粘合金属层，将两个激光振荡部分组合在一起，从而形成在两个激光振荡部分的激光发光点之间具有小距离的改进的半导体激光器装置。

5. 发明申请

US20060027814A1 Semiconductor light-emitting element and method of manufacturingthe same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20060027814A1
公开(公告)日：2006-02-09
申请号：US10535175
申请日：2003-11-12
申请人： Atsushi Watanabe , Atsuya Ito , Hirokazu Takahashi , Yoshinori Kimura , Mamoru Miyachi
发明人： Atsushi Watanabe , Atsuya Ito , Hirokazu Takahashi , Yoshinori Kimura , Mamoru Miyachi
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/34333
摘要： The semiconductor light-emitting element uses a compound semiconductor quantum well structure comprising a well layer, and barrier layers between which the well layer is sandwiched, as an active layer. In the adjacent well layer and barrier layers of the semiconductor light-emitting element, the well layer has in part a doped well region to which an n-type impurity is added at the interface with the barrier layer on the electron injection side, and in the vicinity of this interface, and the barrier layer has a doped barrier region to which the n-type impurity is added at least at the interface and in the vicinity of this interface.
摘要翻译：半导体发光元件使用包括阱层的化合物半导体量子阱结构和夹在阱层之间的阻挡层作为有源层。在半导体发光元件的相邻的阱层和阻挡层中，阱层部分具有与电子注入侧的势垒层的界面处添加n型杂质的掺杂阱区域，该界面附近，势垒层具有至少在界面处和界面附近添加n型杂质的掺杂阻挡区域。

6. 发明授权

US07098063B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07098063B2
公开(公告)日：2006-08-29
申请号：US10743542
申请日：2003-12-23
申请人： Mamoru Miyachi , Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura
发明人： Mamoru Miyachi , Atsushi Watanabe , Hirokazu Takahashi , Yoshinori Kimura
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01L2224/48463 , H01S5/0202 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/02461 , H01S5/0421 , H01S5/0425 , H01S5/2214 , H01S5/2231 , H01S5/32325 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087 , H01S2301/173 , H01S2304/04
摘要： A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III–V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.
摘要翻译：半导体激光器件包括：具有第一激光器部分，绝缘层和欧姆电极层的第一发光元件; 以及具有第二激光部分，绝缘层和欧姆电极层的第二发光元件。第一激光器部分具有脊形波导，并且通过堆叠III族氮化物化合物半导体（例如，GaN基半导体）的薄膜形成。第二激光器部分具有脊形波导，并且通过堆叠III-V族化合物半导体（诸如GaAs）的薄膜形成。第一激光部分和第二激光部分通过插入形成在欧姆电极层之间的粘合金属层而彼此一体地接合。这为半导体激光器件在激光器部件的发光点之间提供了很小的距离。

7. 发明授权

US5239188A Gallium nitride base semiconductor device 失效
标题翻译：氮化镓基底半导体器件
公开(公告)号：US5239188A
公开(公告)日：1993-08-24
申请号：US971208
申请日：1992-11-04
申请人： Tetsuya Takeuchi , Hiroshi Amano , Isamu Akasaki , Atsushi Watanabe , Katsuhide Manabe
发明人： Tetsuya Takeuchi , Hiroshi Amano , Isamu Akasaki , Atsushi Watanabe , Katsuhide Manabe
IPC分类号： H01L21/20 , H01L21/205 , H01L29/20 , H01L29/201 , H01L33/00 , H01L33/32 , H01L33/34 , H01L33/40 , H01S5/02 , H01S5/323
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/201 , H01L33/007 , H01L29/2003 , Y10S148/065 , Y10S148/113 , Y10S438/933
摘要： Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.l-x Al.sub.x).sub.l-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400 to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.l- x Al.sub.x).sub.l-y In.sub.y N are formed on the intermediate layer.

8. 发明授权

US5389571A Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer 失效
标题翻译：用含铝和氮的中间层制造氮化镓基半导体器件的方法
公开(公告)号：US5389571A
公开(公告)日：1995-02-14
申请号：US46960
申请日：1993-04-16
申请人： Tetsuya Takeuchi , Hiroshi Amano , Isamu Akasaki , Atsushi Watanabe , Katsuhide Manabe
发明人： Tetsuya Takeuchi , Hiroshi Amano , Isamu Akasaki , Atsushi Watanabe , Katsuhide Manabe
IPC分类号： H01L21/20 , H01L21/205 , H01L29/20 , H01L29/201 , H01L33/00 , H01L33/32 , H01L33/34 , H01L33/40 , H01S5/02 , H01S5/323
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/201 , H01L33/007 , H01L29/2003 , Y10S148/065 , Y10S148/113 , Y10S438/933
摘要： Disclosed are a gallium nitride type semiconductor device that has a single crystal of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N, which suppresses the occurrence of crystal defects and thus has very high crystallization and considerably excellent flatness, and a method of fabricating the same. The gallium nitride type semiconductor device comprises a silicon substrate, an intermediate layer consisting of a compound containing at least aluminum and nitrogen and formed on the silicon substrate, and a crystal layer of (Ga.sub.1-x Al.sub.x).sub.1-y In.sub.y N (0.ltoreq.x.gtoreq.1, 0.ltoreq.y.ltoreq.1, excluding the case of x=1 and y=0). According to the method of fabricating a gallium nitride base semiconductor device, a silicon single crystal substrate is kept at a temperature of 400.degree. to 1300.degree. C. and is held in the atmosphere where a metaloganic compound containing at least aluminum and a nitrogen-containing compound are present to form a thin intermediate layer containing at least aluminum and nitrogen on a part or the entirety of the surface of the single crystal substrate, and then at least one layer or multiple layers of a single crystal of (Ga.sub.1-x Al.sub.x).sub. 1-y In.sub.y N are formed on the intermediate layer.
摘要翻译：公开了具有（Ga1-xAlx）1-yInyN的单晶的氮化镓型半导体器件及其制造方法，其抑制晶体缺陷的发生，因此具有非常高的结晶度和相当优异的平坦度。氮化镓型半导体器件包括硅衬底，由至少包含铝和氮并且形成在硅衬底上的化合物组成的中间层和（Ga1-xAlx）1-yInyN（0≤x≤1）的晶体层 > / = 1，0

9. 发明授权

US5370738A Compound semiconductor vapor phase epitaxial device 失效
标题翻译：化合物半导体气相外延装置
公开(公告)号：US5370738A
公开(公告)日：1994-12-06
申请号：US12780
申请日：1993-02-03
申请人： Atsushi Watanabe , Hiroshi Amano , Kazumasa Hiramatsu , Isamu Akasaki
发明人： Atsushi Watanabe , Hiroshi Amano , Kazumasa Hiramatsu , Isamu Akasaki
IPC分类号： H01L21/205 , C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C30B25/14 , C23C16/455
摘要： A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.
摘要翻译：化合物半导体气相外延装置包括圆柱形反应器容器，设置在反应器容器中的多个流动通道，设置在一个流动通道中的晶体基板，多个气体供应管道，用于将含有化合物的气体分别供应到在晶体基板上生长至少一个狭缝或线性布置的细孔，其连通相邻的两个流动通道，以沿着与气流方向垂直的方向延伸，以形成由两个或多于两个气体组成的层压层流在晶体基板的位置的上游部分。

10. 发明申请

US20060258026A1 Multi-wavelength semiconductor laser device and its manufacturing method 审中-公开
标题翻译：多波长半导体激光器件及其制造方法
公开(公告)号：US20060258026A1
公开(公告)日：2006-11-16
申请号：US10548488
申请日：2004-02-27
申请人： Mamoru Miyachi , Atsushi Watanabe , Yoshinori Kimura
发明人： Mamoru Miyachi , Atsushi Watanabe , Yoshinori Kimura
IPC分类号： H01L21/66 , H01L23/58
CPC分类号： B82Y20/00 , H01S5/0224 , H01S5/0287 , H01S5/0425 , H01S5/1092 , H01S5/2009 , H01S5/22 , H01S5/34326 , H01S5/34333 , H01S5/4031 , H01S5/4043 , H01S5/4087 , H01S2302/00
摘要： A multi-wavelength semiconductor laser device having a high reflectance multi-layered film that can be collectively formed on a facet of a semiconductor laser element is provided. The multi-wavelength semiconductor laser device is made of a plurality of semiconductor laser elements each of which oscillates at a wavelength different from each other. The plurality of semiconductor laser elements each have a reflective film that is deposited on at least one of a front facet and a backside facet thereof and has the same multilayer structure. The reflective film has, disposed in a film thickness direction, a first reflective region that has a first predetermined reflectance to a first wavelength that is oscillated from a first semiconductor laser element of the semiconductor laser elements; and a second reflective region that has a second predetermined reflectance to a second wavelength that is oscillated from, other than the first semiconductor laser element, a second semiconductor laser element and is different from the first wavelength.
摘要翻译：提供了可以共同形成在半导体激光元件的面上的具有高反射率多层膜的多波长半导体激光器件。多波长半导体激光器件由多个半导体激光器元件制成，每个半导体激光元件以彼此不同的波长振荡。多个半导体激光元件各自具有沉积在其前面和后面小面中的至少一个上并具有相同多层结构的反射膜。反射膜在膜厚方向上具有第一反射区域，该第一反射区域具有从半导体激光元件的第一半导体激光元件振荡的第一波长的第一预定反射率; 以及第二反射区域，其具有从除了第一半导体激光元件以外的第二半导体激光元件而与第一波长不同的第二波长的第二预定反射率。

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