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    • 7. 发明申请
    • FLUORESCENT AND METHOD FOR PRODUCING THE SAME
    • 荧光体及其制造方法
    • US20090159849A1
    • 2009-06-25
    • US12094886
    • 2006-11-17
    • Masato UeharaHiroyuki NakamuraHideaki MaedaMasaya MiyazakiYoshiko YamaguchiKenichi Yamashita
    • Masato UeharaHiroyuki NakamuraHideaki MaedaMasaya MiyazakiYoshiko YamaguchiKenichi Yamashita
    • C09K11/54C09K11/08C09K11/56C09K11/88
    • C09K11/02C09K11/621
    • To provide a fluorescent having low toxicity and high quantum yield, and a method for producing the same. The fluorescent is a compound comprising each one of I, III and VI group elements having a chalcopyrite structure, has a particle diameter of 0.5 to 20.0 nm and a quantum yield of at least 3% but not more than 30% at room temperature. The fluorescent is produced by: mixing a first solution (solution A), which is prepared by dissolving and mixing copper (I) salt and indium (III) salt in a solution added with a complexing agent coordinating copper (I) and indium (III), with a second solution (solution C) in which a sulfur compound is dissolved; ripening the mixed solution for a predetermined amount of time as a pretreatment; heat-treating the ripened solution under predetermined heat conditions; mixing the ripened solution with the second solution (solution C); and heating thus obtained mixed solution under predetermined synthesis conditions. In addition, a product produced by this production method is subjected to compositing treatment with ZnSe, ZnS or the like to improve the quantum yield.
    • 提供具有低毒性和高量子产率的荧光体及其制造方法。 荧光是包含具有黄铜矿结构的I,III和VI族元素中的每一个的化合物,其在室温下的粒径为0.5-20.0nm,量子产率为至少3%但不超过30%。 荧光灯通过以下方法制备:将通过将铜(I)盐和铟(III)盐溶解并混合在加入配位铜(I)和铟(III)的配位剂的溶液中制备的第一溶液(溶液A) ),其中溶解有硫化合物的第二溶液(溶液C); 将混合溶液熟化预定时间作为预处理; 在预定的热条件下热处理成熟的溶液; 将熟化溶液与第二溶液(溶液C)混合; 并在预定的合成条件下加热如此获得的混合溶液。 此外,通过该制造方法制造的产品用ZnSe,ZnS等进行复合处理以提高量子产率。
    • 9. 发明授权
    • Method of manufacturing a semiconductor memory device having a common
source region
    • 制造具有公共源极区域的半导体存储器件的方法
    • US5547884A
    • 1996-08-20
    • US351159
    • 1994-11-30
    • Yoshiko YamaguchiYoichi Ohshima
    • Yoshiko YamaguchiYoichi Ohshima
    • H01L21/8247H01L27/115H01L29/788H01L29/792H01L21/265
    • H01L27/115
    • Field oxide films are formed on a semiconductor substrate of first conductivity type to be spaced from each other in the stripe shape. Gate insulating films are formed on the semiconductor substrate between the field oxide films. Word lines or control gate electrodes are formed on the field oxide films and the gate insulating films to be spaced from each other in the stripe shape along a direction perpendicular to the field oxide films. Grooves are formed in the gate insulating films and the field oxide films sandwiched by the word lines. Source regions of second conductivity type are formed in the semiconductor substrate in the grooves formed in the gate insulating films. A common source wiring region of second conductivity type for electrically connecting the respective source regions is formed in the semiconductor substrate in the grooves formed in the field oxide films. The impurity concentration of the common source wiring region is higher than that of the source regions, and the diffusion depth of the common source wiring region is deeper than that of the source regions.
    • 场氧化物膜形成在第一导电类型的半导体衬底上,以条状彼此间隔开。 栅极绝缘膜形成在半导体衬底上的场氧化膜之间。 字线或控制栅电极形成在场氧化物膜和栅极绝缘膜上,沿着与场氧化膜垂直的方向以条形彼此间隔开。 沟槽形成在栅极绝缘膜和夹在字线之间的场氧化膜。 在栅极绝缘膜中形成的沟槽中的半导体衬底中形成第二导电类型的源区。 在形成在场氧化膜中的沟槽中的半导体衬底中形成用于电连接各个源极区的第二导电类型的公共源极布线区域。 公共源极配线区域的杂质浓度高于源极区域的杂质浓度,并且公共源极配线区域的扩散深度比源极区域的扩散深度更深。
    • 10. 发明授权
    • Nonvolatile semiconductor memory device having reduced resistance value
for the common source wiring region
    • 对于公共源极布线区域具有降低的电阻值的非易失性半导体存储器件
    • US5394001A
    • 1995-02-28
    • US65898
    • 1993-05-25
    • Yoshiko YamaguchiYoichi Ohshima
    • Yoshiko YamaguchiYoichi Ohshima
    • H01L21/8247H01L27/115H01L29/788H01L29/792G11C11/34
    • H01L27/115
    • Field oxide films are formed on a semiconductor substrate of first conductivity type to be spaced from each other in the stripe shape. Gate insulating films are formed on the semiconductor substrate between the field oxide films. Word lines or control gate electrodes are formed on the field oxide films and the gate insulating films to be spaced from each other in the stripe shape along a direction perpendicular to the field oxide films. Grooves are formed in the gate insulating films and the field oxide films in regions sandwiched by the word lines. Source regions of second conductivity type are formed in the semiconductor substrate in the grooves formed in the gate insulating films. A common source wiring region of second conductivity type for electrically connecting the respective source regions is formed in the semiconductor substrate in the grooves formed in the field oxide films. The impurity concentration of the common source wiring region is higher than that of the source regions, and the diffusion depth of the common source wiring region is deeper than that of the source regions.
    • 场氧化物膜形成在第一导电类型的半导体衬底上,以条状彼此间隔开。 栅极绝缘膜形成在半导体衬底上的场氧化膜之间。 字线或控制栅电极形成在场氧化物膜和栅极绝缘膜上,沿着与场氧化膜垂直的方向以条形彼此间隔开。 在由字线夹着的区域中的栅绝缘膜和场氧化膜形成沟槽。 在栅极绝缘膜中形成的沟槽中的半导体衬底中形成第二导电类型的源区。 在形成在场氧化膜中的沟槽中的半导体衬底中形成用于电连接各个源极区的第二导电类型的公共源极布线区域。 公共源极配线区域的杂质浓度高于源极区域的杂质浓度,并且公共源极配线区域的扩散深度比源极区域的扩散深度更深。