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1. 发明授权

US5336362A Method for preparing yttrium 66 boride crystal for soft x-ray monochromator 失效
标题翻译：制备用于软X射线单色仪的钇66硼化物晶体的方法
公开(公告)号：US5336362A
公开(公告)日：1994-08-09
申请号：US962871
申请日：1992-10-19
申请人： Takaho Tanaka , Yutaka Kamimura , Shigeki Otani , Yoshio Ishizawa
发明人： Takaho Tanaka , Yutaka Kamimura , Shigeki Otani , Yoshio Ishizawa
IPC分类号： C30B13/00 , C30B29/10 , C30B13/04
CPC分类号： C30B13/00 , C30B29/10
摘要： It is an object of the present invention to obtain a high quality YB66 crystal by lowering the temperature of the molten zone and growing a crystal by deposition growth under an incongruent condition. A method for preparing a yttrium 66 boride crystal by the floating zone method by use of a YB66 polycrystalline rod. A YB66 crystal having a composition with an atomic ratio B/Y within a range of from 50 to 75, is grown under such conditions that the melt has a composition (an atomic ratio B/Y) different from the raw YB66 polycrystalline rod and the growing YB66 crystal, and that an equilibrium is maintained at the growth interface. When the atomic ratio B/Y of the starting material is within the range of from 50 to 62 and the atomic ratio B/Y of the melt is within the range of from 40 to 62, it is possible to attain the atomic ratio B/Y of the growing crystal within the range of from 50 to 62. When the atomic ratio B/Y of the starting material is within the range of from 62 to 75 and the atomic ratio B/Y of the melt is within the range of from 62 to 93, it is possible to attain the atomic ratio B/Y of the growing crystal within the range of from 62 to 75.
摘要翻译：本发明的目的是通过降低熔融区的温度并在不一致的条件下通过沉积生长生长晶体来获得高质量的YB66晶体。通过使用YB66多晶棒通过浮动区法制备钇66硼化物晶体的方法。具有原子比B / Y在50至75范围内的组成的YB66晶体在使熔体具有与原始YB66多晶棒不同的组成（原子比B / Y）的条件下生长，生长YB66晶体，并且在生长界面保持平衡。当起始材料的原子比B / Y在50至62的范围内并且熔体的原子比B / Y在40至62的范围内时，可以获得原子比B / 生长晶体的Y在50至62的范围内。当原料的原子比B / Y在62至75的范围内时，熔体的原子比B / Y在 62〜93，可以使生长晶体的原子比B / Y在62〜75的范围内。

2. 发明授权

US06566218B2 Boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same 失效
标题翻译：用于在其上生长半导体层的基于硼化物的衬底和使用其的半导体器件
公开(公告)号：US06566218B2
公开(公告)日：2003-05-20
申请号：US09917600
申请日：2001-07-27
申请人： Shigeki Otani , Jun Suda , Hiroyuki Kinoshita
发明人： Shigeki Otani , Jun Suda , Hiroyuki Kinoshita
IPC分类号： H01L2120
CPC分类号： C30B23/02 , C30B13/00 , C30B29/10 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A substrate for forming a semiconducting layer is provided to grow the semiconducting layer on a major surface thereof, wherein the substrate comprises a single crystal of a chemical formula of XB2 where X contains one of Ti and Zr and the major surface may preferably be substantially parallel to plane (0001) of the single crystal because the plane (0001) of the boride substrate is highly coherent to the lattices of GaN and AlN layers grown eptaxially on the substrate. The single crystal of the substrate may be a solid solution containing impurities of not more than 5%, wherein at least one of the impurities is one selected from Cr, Hf, V, Ta and Nb. Further, a semiconductor device includes the substrate of a single crystal of a chemical formula of XB2 and at least one semiconducting layer which is grown epitaxially on the substrate, the semiconducting layer including a nitride semiconductor of a chemical formula of ZN where Z is one of gallium, aluminum and indium and boron. The device can be used for a light emission diode in which one or more connection electrodes are attached on the substrate.
摘要翻译：提供用于形成半导体层的衬底以在其主表面上生长半导体层，其中衬底包括XB2化学式的单晶，其中X包含Ti和Zr之一，并且主表面可以优选地基本上平行（0001），因为硼化物衬底的平面（0001）与在衬底上正面生长的GaN和AlN层的晶格高度一致。衬底的单晶可以是含有不超过5％的杂质的固溶体，其中至少一种杂质是选自Cr，Hf，V，Ta和Nb中的一种。此外，半导体器件包括化学式为XB2的单晶的衬底和在衬底上外延生长的至少一个半导体层，所述半导体层包括化学式ZN的氮化物半导体，其中Z是镓，铝和铟和硼。该器件可用于其中一个或多个连接电极附着在衬底上的发光二极管。

3. 发明授权

US5690732A Method of automatically growing a single crystal 失效
标题翻译：自动生长单晶的方法
公开(公告)号：US5690732A
公开(公告)日：1997-11-25
申请号：US891914
申请日：1992-06-01
申请人： Shigeki Otani , Takaho Tanaka , Yoshio Ishizawa
发明人： Shigeki Otani , Takaho Tanaka , Yoshio Ishizawa
IPC分类号： C30B13/30 , C30B13/00 , C30B13/28 , H05B6/04 , C30B15/20
CPC分类号： C30B13/00 , C30B13/28 , C30B29/10 , C30B29/36 , Y10T117/1004
摘要： A method of automatically growing a single crystal by using a floating-zone method in which radio-frequency induction heating is utilized, wherein the shape of molten zone of a sintered rod material is judged by comparing an anode voltage in a radio-frequency oscillation tube with a radio-frequency current, or a change in the shape of molten zone is judged depending of a change in a radio-frequency current during the growth of the sintered rod material, and power for heating is controlled on the basis of the judgement.
摘要翻译：通过使用利用射频感应加热的浮动区域法自动生长单晶的方法，其中通过比较射频振荡管中的阳极电压来判断烧结棒材料的熔融区域的形状根据烧结棒材生长期间的射频电流的变化来判断熔融区域的形状的变化，根据判断来控制加热功率。

4. 发明授权

US5238527A Lanthanum boride type single crystal and method for growing the same 失效
标题翻译：硼化镧型单晶及其生长方法
公开(公告)号：US5238527A
公开(公告)日：1993-08-24
申请号：US706197
申请日：1991-05-28
申请人： Shigeki Otani , Takaho Tanaka , Yoshio Ishizawa
发明人： Shigeki Otani , Takaho Tanaka , Yoshio Ishizawa
IPC分类号： C30B13/00
CPC分类号： C30B13/00 , C30B29/10
摘要： The present invention relates to a lanthanum boride type single crystal having the chemical formula (La.sub.1-x M.sub.x)B.sub.6 (0.01.ltoreq.x.ltoreq.0.50) wherein M is at least one rare earth element selected from the group consisting of Ce, Pr, Nd, Sm and Gd, and further relates to a method for growing a lanthanum boride type single crystal by fusion method, which comprises using a lanthanum boride starting material containing from 1 to 50 mol % of at least one rare earth boride selected from the group consisting of CeB.sub.6, PrB.sub.6, NdB.sub.6, SmB.sub.6 and GdB.sub.6.
摘要翻译：本发明涉及具有化学式（La1-xMx）B6（0.01≤x≤0.50）的硼化镧型单晶，其中M是至少一种选自Ce，Pr Nd，Sm和Gd，还涉及通过熔融法生长硼化镧型单晶的方法，该方法包括使用含有1至50mol％的至少一种选自以下的稀土硼化物的硼化镧原料：由CeB6，PrB6，NdB6，SmB6和GdB6组成的组。

5. 发明申请

US20060102924A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US20060102924A1
公开(公告)日：2006-05-18
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

6. 发明授权

US07297989B2 Diboride single crystal substrate, semiconductor device using this and its manufacturing method 失效
标题翻译：二硼化物单晶基板，使用这种半导体器件及其制造方法
公开(公告)号：US07297989B2
公开(公告)日：2007-11-20
申请号：US10525753
申请日：2003-08-21
申请人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
发明人： Shigeki Otani , Hiroyuki Kinoshita , Hiroyuki Matsunami , Jun Suda , Hiroshi Amano , Isamu Akasaki , Satoshi Kamiyama
IPC分类号： H01L33/00
CPC分类号： H01L31/0264 , C30B29/10 , C30B33/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/24 , H01S5/0213 , H01S5/0218 , H01S5/32341
摘要： Disclosed are a diboride single crystal substrate which has a cleavage plane as same as that of a nitride compound semiconductor and is electrically conductive; a semiconductor laser diode and a semiconductor device using such a substrate and methods of their manufacture wherein the substrate is a single crystal substrate 1 of diboride XB2 (where X is either Zr or Ti) which is facially oriented in a (0001) plane 2 and has a thickness of 0.1 mm or less. The substrate 1 is permitted cleaving and splitting along a (10-10) plane 4 with ease. Using this substrate to form a semiconductor laser diode of a nitride compound, a vertical structure device can be realized. Resonant planes of a semiconductor laser diode with a minimum of loss can be fabricated by splitting the device in a direction parallel to the (10-10) plane. A method of manufacture that eliminates a margin of cutting is also realized.
摘要翻译：公开了具有与氮化物化合物半导体相同的解理面并具有导电性的二硼化物单晶基板; 半导体激光二极管和使用这种衬底的半导体器件及其制造方法，其中衬底是面向取向的二硼化物XB 2 N（其中X是Zr或Ti）的单晶衬底1 在（0001）面2中，具有0.1mm以下的厚度。允许衬底1容易地沿着（10-10）平面4进行切割和分割。使用该基板形成氮化物化合物的半导体激光二极管，可以实现垂直结构装置。具有最小损耗的半导体激光二极管的谐振平面可以通过在与（10-10）平面平行的方向上分割器件来制造。还实现了消除切割余量的制造方法。

7. 发明授权

US6027670A Rare earth hexaboride electron-emitting material 失效
标题翻译：稀土六硼化物电子发射材料
公开(公告)号：US6027670A
公开(公告)日：2000-02-22
申请号：US105204
申请日：1998-06-26
申请人： Shigeki Otani , Ryutaro Soda , Yoshio Ishizawa
发明人： Shigeki Otani , Ryutaro Soda , Yoshio Ishizawa
IPC分类号： C01B35/04 , H01J1/14 , H01J1/148 , H01J37/06 , H01B1/06 , H01J1/05
CPC分类号： H01J1/148
摘要： A rare earth hexaboride electron-emitting material of the formula ReB.sub.6+x, wherein Re is La, Ce or (La+Ce), and 0.05.ltoreq.x.ltoreq.0.20.
摘要翻译：式ReB6 + x的稀土六硼化物电子发射材料，其中Re为La，Ce或（La + Ce），0.05≤x≤0.20。

8. 发明授权

US5837165A Rare earth hexaboride electron-emitting material 失效
标题翻译：稀土六硼化物电子发射材料
公开(公告)号：US5837165A
公开(公告)日：1998-11-17
申请号：US707071
申请日：1996-09-03
申请人： Shigeki Otani , Ryutaro Soda , Yoshio Ishizawa
发明人： Shigeki Otani , Ryutaro Soda , Yoshio Ishizawa
IPC分类号： C01B35/04 , H01J1/14 , H01J1/148 , H01J37/06 , H01B1/06
CPC分类号： H01J1/148
摘要： A rare earth hexaboride electron-emitting material of the formula ReB.sub.6+x, wherein Re is La, Ce or (La+Ce) and 0.05.ltoreq.x.ltoreq.0.20.
摘要翻译：式ReB6 + x的稀土六硼化物电子发射材料，其中Re为La，Ce或（La + Ce）和0.05

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