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    • 1. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20060077601A1
    • 2006-04-13
    • US11222780
    • 2005-09-12
    • Hiroyuki IkedaKazuo TanakaHiroyasu IshizukaKoichiro Takakuwa
    • Hiroyuki IkedaKazuo TanakaHiroyasu IshizukaKoichiro Takakuwa
    • H02H9/00
    • H01L27/0251
    • The invention intends to provide a semiconductor device capable of preventing an electrostatic breakdown especially by the CDM, of the electrostatic breakdowns generated between plural power supply systems, with a few number of protection circuits. The semiconductor device includes a first circuit block that operates with a first power supply voltage and a first reference voltage, and a second circuit block that operates with a second power supply voltage and a second reference voltage. Further, the semiconductor device includes a first clamp circuit that clamps a potential between the first power supply voltage and the second reference voltage, a second clamp circuit that clamps a potential between the second power supply voltage and the first reference voltage, and a third clamp circuit that clamps a potential between the first reference voltage and the second reference voltage.
    • 本发明旨在提供一种半导体器件,其能够防止特别是CDM的静电击穿在多个电源系统之间产生的静电击穿与少数保护电路。 半导体器件包括以第一电源电压和第一参考电压工作的第一电路块,以及以第二电源电压和第二参考电压工作的第二电路块。 此外,半导体器件包括钳位第一电源电压和第二参考电压之间的电位的第一钳位电路,钳位第二电源电压和第一参考电压之间的电位的第二钳位电路和第三钳位电路 电路,钳位第一参考电压和第二参考电压之间的电位。
    • 6. 发明申请
    • Fixed-pixel display apparatus and cold cathode field electron emission display apparatus
    • 固定像素显示装置和冷阴极场致电子发射显示装置
    • US20060262046A1
    • 2006-11-23
    • US10567923
    • 2004-08-13
    • Hiroyuki Ikeda
    • Hiroyuki Ikeda
    • G09G3/22
    • G09G3/22G09G2310/027
    • A fixed pixel display device has a construction such that the leading-edge and trailing-edge waveforms of a voltage to be applied to a data electrode can be made steep. The fixed pixel display device is provided with scanning electrodes, data electrodes connected to actuation drivers (50), and light-emitting regions. The actuation drivers (50) each includes a switching circuit, an output circuit (51) and a subtraction circuit (52). The switching circuit is equipped with a first and switching circuits (53), (54) and a comparator 55. When a difference (Dm,n−Dm-1,n) between values of data for controlling states of light emission at light-emitting regions composed by the scanning electrodes in mth and (m−1)th rows is not smaller than a first reference value [not greater than a second reference value], the first switching circuit (53) [the second switching circuit (54)] is maintained in an ON state to apply a first voltage V1 [a second voltage V2] to the data electrode in an nth column. When the difference is smaller than the first reference value and is greater than the second reference value, the first and second switching circuits (53), (54) are maintained in OFF states, respectively.
    • 固定像素显示装置具有使得施加到数据电极的电压的前沿和后沿波形能够变得尖锐的结构。 固定像素显示装置设置有扫描电极,连接到致动驱动器(50)的数据电极和发光区域。 致动驱动器(50)各自包括开关电路,输出电路(51)和减法电路(52)。 开关电路配备有第一和开关电路(53),(54)和比较器55。 当用于控制由扫描电极构成的发光区域处的发光状态的数据的值之间的差(D m,n-D m-1,n n) 在第m和第(m-1)行中,第一开关电路(53)不小于第一参考值(不大于第二参考值) [第二开关电路(54)]保持在导通状态,以将第一电压V 1 [第二电压V 2>]施加到数据电极,其中n th 列。 当差小于第一参考值并且大于第二参考值时,第一和第二开关电路(53),(54)分别保持在OFF状态。
    • 10. 发明申请
    • Thin film semiconductor apparatus and method for driving the same
    • 薄膜半导体装置及其驱动方法
    • US20050282317A1
    • 2005-12-22
    • US11166867
    • 2005-06-24
    • Hiroyuki Ikeda
    • Hiroyuki Ikeda
    • G02F1/136G02F1/133G02F1/1368G09F9/30G09F9/35H01L21/336H01L21/77H01L21/84H01L27/32H01L29/786H01L29/04
    • H01L29/78645H01L29/4908H01L29/78648H01L29/78672
    • A thin film semiconductor apparatus comprising thin film transistors integrated on a substrate, and a wiring connecting the thin film transistors to one another, wherein each of the thin film transistors comprises a channel which has a predetermined threshold-voltage and on-off operates depending on a gate voltage applied through a wiring, wherein at least a part of the thin film transistors comprises a semiconductor thin film constituting the channel, and a first gate electrode and a second gate electrode disposed on a surface and a back surface of the semiconductor thin film through an insulating film, wherein the first and second gate electrodes receive a first gate voltage and a second gate voltage, respectively, through wirings which are separately provided, wherein the first gate electrode on-off controls the channel depending on the first gate voltage, and wherein the second gate electrode actively controls the threshold voltage depending on the second gate voltage to render the on-off operation of the thin film transistors appropriate. The semiconductor apparatus of the present invention is advantageous in that the threshold voltage can be actively controlled in accordance with the-dispersion of the threshold voltage, so that an increase in consumed power, an erroneous operation and the like can be suppressed. Thus, it is possible to stably provide a high performance threshold voltage circuit array in high yield.
    • 一种薄膜半导体装置,包括集成在基板上的薄膜晶体管和将薄膜晶体管彼此连接的布线,其中每个薄膜晶体管包括具有预定阈值电压和开关操作的通道,其依赖于 通过布线施加的栅极电压,其中所述薄膜晶体管的至少一部分包括构成所述沟道的半导体薄膜,以及设置在所述半导体薄膜的表面和背面上的第一栅电极和第二栅电极 通过绝缘膜,其中所述第一和第二栅极分别通过分开设置的布线接收第一栅极电压和第二栅极电压,其中所述第一栅电极开 - 关根据所述第一栅极电压控制所述沟道, 并且其中所述第二栅电极根据所述第二栅极电压主动地控制所述阈值电压 薄膜晶体管的开 - 关操作适当。 本发明的半导体装置的优点在于,可以根据阈值电压的偏差来主动地控制阈值电压,从而可以抑制消耗功率的增加,错误的操作等。 因此,可以以高产率稳定地提供高性能阈值电压电路阵列。