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1. 发明授权

US08212261B2 SiC semiconductor device with BPSG insulation film 有权
标题翻译：具有BPSG绝缘膜的SiC半导体器件
公开(公告)号：US08212261B2
公开(公告)日：2012-07-03
申请号：US12153031
申请日：2008-05-13
申请人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
发明人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
IPC分类号： H01L29/10
CPC分类号： H01L29/66068 , H01L21/0485 , H01L21/31612 , H01L21/3185 , H01L29/0847 , H01L29/1608 , H01L29/45 , H01L29/66666 , H01L29/7828
摘要： A SiC device includes: a substrate; a drift layer; a base region; a source region; a channel layer connecting the drift layer and the source region; a gate oxide film on the channel layer and the source region; a gate electrode on the gate oxide film; an interlayer insulation film with a contact hole having a barrier layer and a BPSG insulation film on the gate electrode; a source electrode having upper and lower wiring electrodes on the interlayer insulation film and in the contact hole for connecting the base region and the source region; and a drain electrode on the substrate. The barrier layer prevents a Ni component in the lower wiring electrode from being diffused into the BPSG insulation film.
摘要翻译： SiC器件包括：衬底; 漂移层基地区源区; 连接漂移层和源极区域的沟道层; 沟道层和源极区上的栅极氧化膜; 栅氧化膜上的栅电极; 具有在栅电极上具有阻挡层和BPSG绝缘膜的接触孔的层间绝缘膜; 源电极，在层间绝缘膜上具有上和下布线电极以及用于连接基极区域和源极区域的接触孔; 和衬底上的漏电极。阻挡层防止下部布线电极中的Ni成分扩散到BPSG绝缘膜中。

2. 发明申请

US20080315211A1 SIC semiconductor device with BPSG insulation film and method for manufacturing the same 有权
标题翻译：具有BPSG绝缘膜的SIC半导体器件及其制造方法
公开(公告)号：US20080315211A1
公开(公告)日：2008-12-25
申请号：US12153031
申请日：2008-05-13
申请人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
发明人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L29/66068 , H01L21/0485 , H01L21/31612 , H01L21/3185 , H01L29/0847 , H01L29/1608 , H01L29/45 , H01L29/66666 , H01L29/7828
摘要： A SiC device includes: a substrate; a drift layer; a base region; a source region; a channel layer connecting the drift layer and the source region; a gate oxide film on the channel layer and the source region; a gate electrode on the gate oxide film; an interlayer insulation film with a contact hole having a barrier layer and a BPSG insulation film on the gate electrode; a source electrode having upper and lower wiring electrodes on the interlayer insulation film and in the contact hole for connecting the base region and the source region; and a drain electrode on the substrate. The barrier layer prevents a Ni component in the lower wiring electrode from being diffused into the BPSG insulation film.
摘要翻译： SiC器件包括：衬底; 漂移层基地区源区; 连接漂移层和源极区域的沟道层; 沟道层和源极区上的栅极氧化膜; 栅氧化膜上的栅电极; 具有在栅电极上具有阻挡层和BPSG绝缘膜的接触孔的层间绝缘膜; 源电极，在层间绝缘膜上具有上和下布线电极以及用于连接基极区域和源极区域的接触孔; 和衬底上的漏电极。阻挡层防止下部布线电极中的Ni成分扩散到BPSG绝缘膜中。

3. 发明授权

US07713805B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US07713805B2
公开(公告)日：2010-05-11
申请号：US11976217
申请日：2007-10-23
申请人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
发明人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/41741 , H01L29/45 , H01L29/66068
摘要： A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film and an edge portion of the gate electrode is rounded and oxidized.
摘要翻译：制造具有MOS结构的碳化硅半导体器件的方法包括制备由碳化硅制成的衬底，并形成沟道区，第一杂质区，第二杂质区，栅绝缘层和栅电极，以形成半导体元件。此外，在半导体元件上形成膜以提供层间绝缘层的材料，并且在湿气氛中在约700℃或更高的温度下进行回流工艺，使得层间绝缘层由该膜和栅电极的边缘部分被圆化并氧化。

4. 发明授权

US07645658B2 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US07645658B2
公开(公告)日：2010-01-12
申请号：US11976216
申请日：2007-10-23
申请人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
发明人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
IPC分类号： H01L21/8238
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/1608 , H01L29/66068 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film. Furthermore, a dehydration process is performed at about 700° C. or lower in an inert gas atmosphere after the reflow process is performed.
摘要翻译：制造具有MOS结构的碳化硅半导体器件的方法包括制备由碳化硅制成的衬底，并形成沟道区，第一杂质区，第二杂质区，栅绝缘层和栅电极，以形成半导体元件。此外，在半导体元件上形成膜以提供层间绝缘层的材料，并且在湿气氛中在约700℃或更高的温度下进行回流工艺，使得层间绝缘层由这个电影。此外，在进行回流处理之后，在惰性气体气氛中，在约700℃以下进行脱水处理。

5. 发明申请

US20080102585A1 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20080102585A1
公开(公告)日：2008-05-01
申请号：US11976216
申请日：2007-10-23
申请人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
发明人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
IPC分类号： H01L21/336
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/1608 , H01L29/66068 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film. Furthermore, a dehydration process is performed at about 700° C. or lower in an inert gas atmosphere after the reflow process is performed.
摘要翻译：制造具有MOS结构的碳化硅半导体器件的方法包括制备由碳化硅制成的衬底，并形成沟道区，第一杂质区，第二杂质区，栅绝缘层和栅电极，以形成半导体元件。此外，在半导体元件上形成膜以提供层间绝缘层的材料，并且在湿气氛中在约700℃或更高的温度下进行回流工艺，使得层间绝缘层由这个电影。此外，在进行回流处理之后，在惰性气体气氛中，在约700℃以下进行脱水处理。

6. 发明申请

US20080102591A1 Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20080102591A1
公开(公告)日：2008-05-01
申请号：US11976217
申请日：2007-10-23
申请人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
发明人： Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
IPC分类号： H01L21/336
CPC分类号： H01L29/7828 , H01L21/049 , H01L29/41741 , H01L29/45 , H01L29/66068
摘要： A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film and an edge portion of the gate electrode is rounded and oxidized.
摘要翻译：制造具有MOS结构的碳化硅半导体器件的方法包括制备由碳化硅制成的衬底，并形成沟道区，第一杂质区，第二杂质区，栅绝缘层和栅电极，以形成半导体元件。此外，在半导体元件上形成膜以提供层间绝缘层的材料，并且在湿气氛中在约700℃或更高的温度下进行回流工艺，使得层间绝缘层由该膜和栅电极的边缘部分被圆化并氧化。

7. 发明授权

US07810798B2 Electromagnetic actuator for active vibration damping device 有权
标题翻译：主动减震装置电磁执行机构
公开(公告)号：US07810798B2
公开(公告)日：2010-10-12
申请号：US11714739
申请日：2007-03-07
申请人： Hiroyuki Ichikawa , Yoshinori Watanabe , Takayoshi Yasuda , Motoshi Sakurai
发明人： Hiroyuki Ichikawa , Yoshinori Watanabe , Takayoshi Yasuda , Motoshi Sakurai
IPC分类号： F16F5/00
CPC分类号： F16F13/26 , F16F13/106
摘要： An electromagnetic actuator having: a stator and a movable member disposed in a central hole of a coil member of the stator movable in an axial direction; a coupling rod fixed to the movable member; and an elastic stopper having a ring shaped sealing unit at its outer periphery part, a first stopper unit at its center part, a coupling unit that mutually couples the sealing unit and the first stopper unit, and second stopper units located radially between the sealing unit and the first stopper unit at respective circumferential positions. The sealing unit is compressed between the bottom wall of a housing and a lid member to form a sealing mechanism that fluid-tightly close an opening of an adjustment hole. The first stopper unit axially faces the coupling rod bottom with a first separation distance, and the second stopper units axially face the movable member bottom with a second separation distance greater than the first.
摘要翻译：一种电磁致动器，具有：定子和可动构件，其设置在所述定子的线圈构件的中心孔中，所述线圈构件的轴向方向可移动; 连接杆，固定在可动件上; 以及弹性止动件，其外周部具有环形密封单元，其中心部分具有第一止动单元，将密封单元与第一止动单元相互联接的联接单元以及径向位于密封单元之间的第二止动单元和第一挡块单元。密封单元在壳体的底壁和盖构件之间被压缩，以形成密封关闭调节孔的开口的密封机构。第一止动单元以第一分隔距离轴向面对联接杆底部，并且第二止动单元以大于第一间隔距离的第二间隔距离面向可动构件底部。

8. 发明授权

US07747353B2 Method of setting control data in an active vibration isolation control system and a control method thereof 有权
标题翻译：在主动隔振控制系统中设置控制数据的方法及其控制方法
公开(公告)号：US07747353B2
公开(公告)日：2010-06-29
申请号：US11060701
申请日：2005-02-18
申请人： Daichi Mizushima , Takehiko Fushimi , Hiroyuki Ichikawa , Atsushi Muramatsu
发明人： Daichi Mizushima , Takehiko Fushimi , Hiroyuki Ichikawa , Atsushi Muramatsu
IPC分类号： G05B15/00
CPC分类号： F16F15/002 , F16F13/26 , F16F15/027 , G05B13/041 , G05D19/02
摘要： A method of setting control data by an active vibration isolation control system includes the steps of selecting, when a frequency of a pulse signal actually detected is superior to a predetermined frequency, appropriate control data selected from among predetermined data maps incorporating control data capable of securing, in accordance with various vehicle driving conditions respectively, a control condition in which operation of the vibrator is preferably controlled, calculating a deviation between the appropriate control data commensurate with the actual vehicle driving condition at the time of controlling and actually detected data representing vibration subjected to a vehicle specific position, the actually detected data obtained in terms of a same physics amount as a physics amount of the control data, and modifying the appropriate control data on the basis of the calculated deviation.
摘要翻译：一种通过主动隔振控制系统设置控制数据的方法包括以下步骤：当实际检测到的脉冲信号的频率优于预定频率时，选择合适的控制数据，该控制数据从包含能够确保根据各种车辆驾驶条件，优选控制振动器的操作的控制条件，计算与控制时的实际车辆驾驶状况相对应的适当控制数据之间的偏差，以及实际检测到的表示振动的数据根据与物理量相同的物理量获得的实际检测数据，并根据计算出的偏差来修正适当的控制数据。

9. 发明授权

US07735129B2 Firewall device 失效
标题翻译：防火墙设备
公开(公告)号：US07735129B2
公开(公告)日：2010-06-08
申请号：US10544483
申请日：2004-02-04
申请人： Kazuhiko Nagata , Taisuke Oka , Ryoichi Suzuki , Takashi Ikegawa , Hiroyuki Ichikawa , Tadashi Ishikawa
发明人： Kazuhiko Nagata , Taisuke Oka , Ryoichi Suzuki , Takashi Ikegawa , Hiroyuki Ichikawa , Tadashi Ishikawa
IPC分类号： H04L9/00
CPC分类号： H04L63/0227 , H04L63/08 , H04L63/1466
摘要： A firewall apparatus including plural virtual firewalls, each virtual firewall including a dependent firewall policy, is disclosed. The firewall apparatus includes: a distribution management table for managing a user name and a virtual firewall ID; a part configured to receive authentication information for network connection from a user terminal, and hold a user name included in the authentication information; a part configured to report the authentication information to the authentication server; and a part configured to receive an authentication response from the authentication server, and hold a user ID, included in the authentication response, to be provided to the user terminal. The firewall apparatus registers the user ID in the distribution management table associating the user ID with the user name.
摘要翻译：公开了一种包括多个虚拟防火墙的防火墙设备，每个虚拟防火墙包括依赖的防火墙策略。防火墙装置包括：用于管理用户名和虚拟防火墙ID的分发管理表; 被配置为从用户终端接收用于网络连接的认证信息并保持包括在认证信息中的用户名的部分; 被配置为将认证信息报告给认证服务器的部件; 以及被配置为从认证服务器接收认证响应并保持包括在认证响应中的用户ID以提供给用户终端的部分。防火墙装置将用户ID与用户名相关联的分发管理表中登记用户ID。

10. 发明授权

US07706924B2 Vibration controller for active vibration insulators and method for controlling vibrations for the same 有权
标题翻译：主动振动绝缘子振动控制器及其振动控制方法
公开(公告)号：US07706924B2
公开(公告)日：2010-04-27
申请号：US11057757
申请日：2005-02-15
申请人： Hiroyuki Ichikawa , Atsushi Muramatsu , Takayoshi Yasuda
发明人： Hiroyuki Ichikawa , Atsushi Muramatsu , Takayoshi Yasuda
IPC分类号： G01M1/38
CPC分类号： G05B13/0245 , F16F15/002 , G05D19/02
摘要： A vibration controller includes a map controller, an adaptive controller, a set-up frequency judge/switcher, and an actuator. The map controller includes a data map storage for storing data on control signals determined in advance for a vibration insulator, and a signal generator for selecting one of the data, depending on a frequency of a cyclically pulsating signal emitted from a vibration generating source of a vehicle, from the data map storage and generating a control signal. The adaptive controller generates the control signal with respect to the cyclically pulsating signal using an adaptive control method. The set-up frequency judge/switcher switches from the map controller to the adaptive controller or vice versa based on the frequency of the cyclically pulsating signal. The actuator actuates an actuator of the vibration insulator based on the control signal generated by the map controller or the adaptive controller, whereby inhibiting the vehicle from vibrating.
摘要翻译：振动控制器包括地图控制器，自适应控制器，建立频率判断器/切换器和致动器。地图控制器包括用于存储关于预先为振动绝缘体确定的控制信号的数据的数据图存储器，以及用于根据从振动发生源发出的循环脉动信号的频率来选择数据中的一个的信号发生器车辆，从数据图存储并产生控制信号。自适应控制器使用自适应控制方法产生相对于循环脉动信号的控制信号。基于循环脉动信号的频率，设置频率判断/切换器从地图控制器切换到自适应控制器，反之亦然。执行器基于由地图控制器或自适应控制器产生的控制信号来致动振动绝缘体的致动器，从而阻止车辆振动。

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