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1. 发明申请

US20070146539A1 Spatial information detecting device 失效
标题翻译：空间信息检测装置
公开(公告)号：US20070146539A1
公开(公告)日：2007-06-28
申请号：US10598274
申请日：2005-10-24
申请人： Hideki Kawahara , Motoo Ikari , Kenichi Hagio , Eiji Nakamoto
发明人： Hideki Kawahara , Motoo Ikari , Kenichi Hagio , Eiji Nakamoto
IPC分类号： H04N5/222
CPC分类号： H01L27/14843 , H01L27/14818 , H01L27/1485 , H04N5/235
摘要： A spatial information detecting device for accurately detecting information of a target space is provided. This device has photoelectric converters for receiving a reflection light from the space, in which a flashing light is being irradiated, a charge storage portion formed in each of the photoelectric converters by applying a control voltage to electrodes on each of the photoelectric converters, a controller for controlling the number of electrodes, to which the control voltage is applied, such that an area of the charge storage portion changes based on a flash cycle of the flashing light, and an amplitude-image generator for generating an amplitude image having pixel values, each of which is provided by a difference between electric charges collected in a lighting period of the flashing light by a charge storage portion and the electric charges collected in a non-lighting period of the flashing light by another charge storage portion.
摘要翻译：提供了一种用于准确地检测目标空间的信息的空间信息检测装置。该装置具有光电转换器，用于从其中照射闪光的空间接收反射光，通过向每个光电转换器中的电极施加控制电压，形成在每个光电转换器中的电荷存储部分，控制器用于控制施加控制电压的电极的数量，使得电荷存储部分的面积基于闪光的闪光周期而变化;以及幅度图像发生器，用于产生具有像素值的幅度图像，其中的每一个由通过电荷存储部分在闪光的发光周期中收集的电荷与通过另一个电荷存储部分在闪光的非发光时段中收集的电荷之间的差异来提供。

2. 发明授权

US07851382B2 Method for manufacturing SiC semiconductor device 有权
标题翻译： SiC半导体器件的制造方法
公开(公告)号：US07851382B2
公开(公告)日：2010-12-14
申请号：US12155020
申请日：2008-05-29
申请人： Hiroki Nakamura , Hideki Kawahara
发明人： Hiroki Nakamura , Hideki Kawahara
IPC分类号： H01L21/469
CPC分类号： H01L21/046 , H01L21/0465 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity in the SiC layer; applying a cap layer on the SiC layer; annealing the cap layer to be transformed to a carbon layer; annealing the SiC layer to activate the impurity with covering the SiC layer with the carbon layer; removing the carbon layer; and performing a sacrifice oxidation process. The performing the sacrifice oxidation process includes: forming a sacrifice oxide film; and removing the sacrifice oxide film. The forming the oxide film is performed after the performing the sacrifice oxidation process.
摘要翻译：一种制造SiC半导体器件的方法包括：在SiC层中形成杂质层; 在SiC层上形成氧化膜。形成杂质层包括：在SiC层中注入杂质; 在SiC层上施加覆盖层; 对盖层进行退火以转变为碳层; 退火SiC层以使碳层覆盖SiC层来激活杂质; 去除碳层; 并进行牺牲氧化处理。进行牺牲氧化处理包括：形成牺牲氧化膜; 并除去牺牲氧化膜。在进行牺牲氧化处理之后进行氧化膜的形成。

3. 发明申请

US20080315211A1 SIC semiconductor device with BPSG insulation film and method for manufacturing the same 有权
标题翻译：具有BPSG绝缘膜的SIC半导体器件及其制造方法
公开(公告)号：US20080315211A1
公开(公告)日：2008-12-25
申请号：US12153031
申请日：2008-05-13
申请人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
发明人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L29/66068 , H01L21/0485 , H01L21/31612 , H01L21/3185 , H01L29/0847 , H01L29/1608 , H01L29/45 , H01L29/66666 , H01L29/7828
摘要： A SiC device includes: a substrate; a drift layer; a base region; a source region; a channel layer connecting the drift layer and the source region; a gate oxide film on the channel layer and the source region; a gate electrode on the gate oxide film; an interlayer insulation film with a contact hole having a barrier layer and a BPSG insulation film on the gate electrode; a source electrode having upper and lower wiring electrodes on the interlayer insulation film and in the contact hole for connecting the base region and the source region; and a drain electrode on the substrate. The barrier layer prevents a Ni component in the lower wiring electrode from being diffused into the BPSG insulation film.
摘要翻译： SiC器件包括：衬底; 漂移层基地区源区; 连接漂移层和源极区域的沟道层; 沟道层和源极区上的栅极氧化膜; 栅氧化膜上的栅电极; 具有在栅电极上具有阻挡层和BPSG绝缘膜的接触孔的层间绝缘膜; 源电极，在层间绝缘膜上具有上和下布线电极以及用于连接基极区域和源极区域的接触孔; 和衬底上的漏电极。阻挡层防止下部布线电极中的Ni成分扩散到BPSG绝缘膜中。

4. 发明申请

US20060162082A1 Cushion body 审中-公开
标题翻译：缓冲体
公开(公告)号：US20060162082A1
公开(公告)日：2006-07-27
申请号：US11334361
申请日：2006-01-19
申请人： Hideki Kawahara , Renko Igarashi
发明人： Hideki Kawahara , Renko Igarashi
IPC分类号： A47C27/14
CPC分类号： A47C27/15 , A47C27/20
摘要： A cushion body includes a main body made of elastic foam and having at opposite sides thereof first and second surfaces between which a thickness is defined, the main body being formed with a plurality of holes in a direction of the thickness, a plurality of columnar elastic members positioned in the plural holes, respectively, the plural columnar elastic members being different from the main body in elasticity, a first surface member made of elastic foam similar to the elastic foam of the main body, the first surface member being connected to the first surface of the main body, and a second surface member made of elastic foam similar to the elastic foam of the main body, the second surface member being connected to the second surface of the main body.
摘要翻译：缓冲体包括由弹性泡沫制成的主体，并且在其相对侧上具有限定厚度的第一和第二表面，主体在厚度方向上形成有多个孔，多个柱状弹性分别位于多个孔中的多个柱状弹性构件在弹性方面与主体不同，第一表面构件由类似于主体的弹性泡沫的弹性泡沫构成，第一表面构件连接到第一主体的表面以及与主体的弹性泡沫相似的由弹性泡沫制成的第二表面构件，第二表面构件连接到主体的第二表面。

5. 发明授权

US06369688B1 Automatic gang switch having a heat ray sensor 失效
标题翻译：具有热射线传感器的自动组合开关
公开(公告)号：US06369688B1
公开(公告)日：2002-04-09
申请号：US09584139
申请日：2000-05-31
申请人： Tatsuya Abe , Masaharu Fukushima , Shiro Mori , Takahiro Yamanouchi , Hirotoshi Watanabe , Makoto Morimoto , Hideki Kawahara
发明人： Tatsuya Abe , Masaharu Fukushima , Shiro Mori , Takahiro Yamanouchi , Hirotoshi Watanabe , Makoto Morimoto , Hideki Kawahara
IPC分类号： H01H3732
CPC分类号： H05B37/0227 , H03K17/94 , Y02B20/44 , Y10T307/773
摘要： The automatic gang switch having a heat ray sensor is fixedly mounted on a mounting frame having a generally rectangular opening. The length of a housing of the switch is approximately two thirds of that of the generally rectangular opening of the mounting frame, while the width of the housing is approximately equal to that of the generally rectangular opening of the mounting frame. The switch includes a human body detecting section for detecting heat rays emitted from a human body and a circuit section. The circuit section includes a control circuit for generating a control signal to turn a load on for a predetermined operation holding time when the human body detecting section generates a detection signal, a load control circuit connected to a power source and the load in series for turning on or off power supply to the load depending on the control signal, an off-time power circuit connected in parallel with the load control circuit and having an input impedance with which the load is not driven when the load control circuit is off, the off-time power circuit supplying an electric power to the control circuit when the load control circuit is off, and an on-time power circuit for supplying the electric power to the control circuit when the load control circuit is on. The switch further includes a time setting section for setting an operation holding time and a mode setting section for changing over an operation mode of the control circuit.
摘要翻译：具有热射线传感器的自动组合开关固定地安装在具有大致矩形开口的安装框架上。开关的壳体的长度大约是安装框架的大致矩形开口的三分之二，而壳体的宽度大致等于安装框架的大致矩形开口的宽度。开关包括用于检测从人体发射的热射线的人体检测部和电路部。电路部分包括控制电路，用于当人体检测部分产生检测信号时，产生控制信号以使预定的操作保持时间变为负载，连接到电源的负载控制电路和用于转动的串联负载根据控制信号对负载进行通电或断电，与负载控制电路并联连接并具有当负载控制电路断开时不驱动负载的输入阻抗的断电时间电源电路，关断时间电源电路，当负载控制电路断开时向控制电路供电;以及接通电源电路，用于在负载控制电路接通时向控制电路供电。开关还包括用于设定操作保持时间的时间设定部分和用于切换控制电路的操作模式的模式设置部分。

6. 发明授权

US6115684A Method of transforming periodic signal using smoothed spectrogram, method of transforming sound using phasing component and method of analyzing signal using optimum interpolation function 失效
标题翻译：使用平滑光谱图变换周期信号的方法，使用相位分量变换声音的方法和使用最优内插函数分析信号的方法
公开(公告)号：US6115684A
公开(公告)日：2000-09-05
申请号：US902546
申请日：1997-07-29
申请人： Hideki Kawahara , Ikuyo Masuda
发明人： Hideki Kawahara , Ikuyo Masuda
IPC分类号： G10L11/00 , G10L21/00 , G10L21/04 , G10L101/02
CPC分类号： G10L25/48 , G10L21/04 , G10L2021/0135
摘要： At a smoothing spectrogram calculation portion, a triangular interpolation function having a frequency width twice that of the fundamental frequency of a signal is obtained based on information on the fundamental frequency of the signal. The interpolation function and a spectrum obtained at an adaptive frequency analysis portion are convoluted in the direction of frequency. Then, using a triangular interpolation function having a time length twice that of a fundamental period, the spectrum interpolated in the frequency direction described above is further interpolated in the temporal direction, in order to produce a smoothed spectrogram having the space between grid points on the time-frequency plane filled with the surface of a bilinear function. Using the smoothed spectrogram, a speech sound is transformed. Therefore, the influence of periodicity in the frequency direction and the temporal direction can be reduced.
摘要翻译：在平滑频谱图计算部分，基于信号的基频的信息，获得频率宽度为信号的基频两倍的三角插值函数。在自适应频率分析部分获得的内插函数和频谱在频率方向上被卷积。然后，使用具有基本周期的时间长度的两倍的时间长度的三角插值函数，在时间方向上进一步内插在上述频率方向上插入的频谱，以便产生平滑的谱图，该平滑的谱图具有在充满双线性函数表面的时频平面。使用平滑的频谱图，转换语音。因此，可以减少周期性在频率方向和时间方向上的影响。

7. 发明授权

US08212261B2 SiC semiconductor device with BPSG insulation film 有权
标题翻译：具有BPSG绝缘膜的SiC半导体器件
公开(公告)号：US08212261B2
公开(公告)日：2012-07-03
申请号：US12153031
申请日：2008-05-13
申请人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
发明人： Hiroyuki Ichikawa , Hideki Kawahara , Hiroki Nakamura
IPC分类号： H01L29/10
CPC分类号： H01L29/66068 , H01L21/0485 , H01L21/31612 , H01L21/3185 , H01L29/0847 , H01L29/1608 , H01L29/45 , H01L29/66666 , H01L29/7828
摘要： A SiC device includes: a substrate; a drift layer; a base region; a source region; a channel layer connecting the drift layer and the source region; a gate oxide film on the channel layer and the source region; a gate electrode on the gate oxide film; an interlayer insulation film with a contact hole having a barrier layer and a BPSG insulation film on the gate electrode; a source electrode having upper and lower wiring electrodes on the interlayer insulation film and in the contact hole for connecting the base region and the source region; and a drain electrode on the substrate. The barrier layer prevents a Ni component in the lower wiring electrode from being diffused into the BPSG insulation film.
摘要翻译： SiC器件包括：衬底; 漂移层基地区源区; 连接漂移层和源极区域的沟道层; 沟道层和源极区上的栅极氧化膜; 栅氧化膜上的栅电极; 具有在栅电极上具有阻挡层和BPSG绝缘膜的接触孔的层间绝缘膜; 源电极，在层间绝缘膜上具有上和下布线电极以及用于连接基极区域和源极区域的接触孔; 和衬底上的漏电极。阻挡层防止下部布线电极中的Ni成分扩散到BPSG绝缘膜中。

8. 发明申请

US20110015931A1 PERIODIC SIGNAL PROCESSING METHOD,PERIODIC SIGNAL CONVERSION METHOD,PERIODIC SIGNAL PROCESSING DEVICE, AND PERIODIC SIGNAL ANALYSIS METHOD 有权
标题翻译：周期信号处理方法，周期信号转换方法，周期信号处理装置和周期信号分析方法
公开(公告)号：US20110015931A1
公开(公告)日：2011-01-20
申请号：US12669533
申请日：2008-07-18
申请人： Hideki Kawahara , Masanori Morise , Toru Takahashi , Toshio Irino
发明人： Hideki Kawahara , Masanori Morise , Toru Takahashi , Toshio Irino
IPC分类号： G10L13/00
CPC分类号： G10L21/00 , G10L13/033 , G10L13/04 , G10L25/00 , G10L25/90
摘要： The invention relates to a periodic signal processing method, a periodic signal conversion method, and a periodic signal processing device capable of reducing the influence of periodicity without using a spectral model. Time windows are arranged such that a center of each of the time windows is at a division position which divides a fundamental frequency in a temporal direction into fractions 1/n (where n is an integer equal to or larger than 2) so as to extract a plurality of portions of different ranges from a signal having periodicity. A power spectrum for the plurality of portions extracted by the respective time windows is calculated, and the calculated power spectrum is added with a same ratio.
摘要翻译：本发明涉及周期性信号处理方法，周期信号转换方法以及能够在不使用频谱模型的情况下减少周期影响的周期信号处理装置。时间窗被布置成使得每个时间窗口的中心处于将时间方向上的基本频率划分为分数1 / n（其中n是等于或大于2的整数）的分割位置，以便提取与具有周期性的信号的不同范围的多个部分。计算由各个时间窗口提取的多个部分的功率谱，并且以相同的比率添加所计算的功率谱。

9. 发明授权

US07645975B2 Spatial information detecting device 失效
标题翻译：空间信息检测装置
公开(公告)号：US07645975B2
公开(公告)日：2010-01-12
申请号：US10598274
申请日：2005-10-24
申请人： Hideki Kawahara , Motoo Ikari , Kenichi Hagio , Eiji Nakamoto
发明人： Hideki Kawahara , Motoo Ikari , Kenichi Hagio , Eiji Nakamoto
IPC分类号： H01L27/00 , G01N21/86 , H04N5/222
CPC分类号： H01L27/14843 , H01L27/14818 , H01L27/1485 , H04N5/235
摘要： A spatial information detecting device for accurately detecting information of a target space is provided. This device has photoelectric converters for receiving a reflection light from the space, in which a flashing light is being irradiated, a charge storage portion formed in each of the photoelectric converters by applying a control voltage to electrodes on each of the photoelectric converters, a controller for controlling the number of electrodes, to which the control voltage is applied, such that an area of the charge storage portion changes based on a flash cycle of the flashing light, and an amplitude-image generator for generating an amplitude image having pixel values, each of which is provided by a difference between electric charges collected in a lighting period of the flashing light by a charge storage portion and the electric charges collected in a non-lighting period of the flashing light by another charge storage portion.
摘要翻译：提供了一种用于准确地检测目标空间的信息的空间信息检测装置。该装置具有光电转换器，用于从其中照射闪光的空间接收反射光，通过向每个光电转换器中的电极施加控制电压，形成在每个光电转换器中的电荷存储部分，控制器用于控制施加控制电压的电极的数量，使得电荷存储部分的面积基于闪光的闪光周期而变化;以及幅度图像发生器，用于产生具有像素值的幅度图像，其中的每一个由通过电荷存储部分在闪光的发光周期中收集的电荷与通过另一个电荷存储部分在闪光的非发光时段中收集的电荷之间的差异来提供。

10. 发明申请

US20080318438A1 Method for manufacturing sic semiconductor device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20080318438A1
公开(公告)日：2008-12-25
申请号：US12155020
申请日：2008-05-29
申请人： Hiroki Nakamura , Hideki Kawahara
发明人： Hiroki Nakamura , Hideki Kawahara
IPC分类号： H01L21/31
CPC分类号： H01L21/046 , H01L21/0465 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity in the SiC layer; applying a cap layer on the SiC layer; annealing the cap layer to be transformed to a carbon layer; annealing the SiC layer to activate the impurity with covering the SiC layer with the carbon layer; removing the carbon layer; and performing a sacrifice oxidation process. The performing the sacrifice oxidation process includes: forming a sacrifice oxide film; and removing the sacrifice oxide film. The forming the oxide film is performed after the performing the sacrifice oxidation process.
摘要翻译：一种制造SiC半导体器件的方法包括：在SiC层中形成杂质层; 在SiC层上形成氧化膜。形成杂质层包括：在SiC层中注入杂质; 在SiC层上施加覆盖层; 对盖层进行退火以转变为碳层; 退火SiC层以使碳层覆盖SiC层来激活杂质; 去除碳层; 并进行牺牲氧化处理。进行牺牲氧化处理包括：形成牺牲氧化膜; 并除去牺牲氧化膜。在进行牺牲氧化处理之后进行氧化膜的形成。

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