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    • 4. 发明授权
    • Color liquid crystal display device and manufacturing method of the same
    • 彩色液晶显示装置及其制造方法
    • US07041522B2
    • 2006-05-09
    • US11028310
    • 2005-01-04
    • Hiroaki TanakaMichiaki SakamotoTakahiko WatanabeYoshiaki HashimotoSyuusaku Kido
    • Hiroaki TanakaMichiaki SakamotoTakahiko WatanabeYoshiaki HashimotoSyuusaku Kido
    • H01L21/00
    • G02F1/136209G02F1/136227G02F2001/136236
    • In a manufacturing method of a color liquid crystal display device, a first conductive film is formed on a transparent insulating substrate to form a gate electrode and a gate bus line (first PR process). A gate insulating film, a semiconductor layer, an ohmic layer, and a second conductive film are deposited to form an island of a thin film transistor and a drain bus line (second PR process). Then, color filters in respective three colors are formed in their respective predetermined regions on the transparent insulating substrate in succession (third through fifth PR processes). A black matrix is formed, and a drain electrode and a source electrode are formed in the island by removing the second conductive film and ohmic layer on a region corresponding to the channel region by using the black matrix as a mask (sixth PR process). Then, a planarization film and a pixel electrode are formed (seventh and eighth PR processes).
    • 在彩色液晶显示装置的制造方法中,在透明绝缘基板上形成第一导电膜,形成栅电极和栅极总线(第一PR处理)。 沉积栅极绝缘膜,半导体层,欧姆层和第二导电膜以形成薄膜晶体管和漏极总线(第二PR处理)的岛。 然后,在透明绝缘基板上的各自的预定区域中连续形成三种颜色的滤色器(第三至第五PR处理)。 通过使用黑矩阵作为掩模(第六PR处理),通过去除与沟道区对应的区域上的第二导电膜和欧姆层,在岛中形成漏极和源电极。 然后,形成平坦化膜和像素电极(第七和第八PR处理)。
    • 9. 发明授权
    • Active matrix substrate and manufacturing method therefor
    • 有源矩阵基板及其制造方法
    • US06674093B1
    • 2004-01-06
    • US09695321
    • 2000-10-25
    • Hiroaki TanakaHirotaka YamaguchiWakahiko KanekoMichiaki SakamotoSatoshi IhidaTakasuke HayaseTae YoshikawaHiroshi Kanou
    • Hiroaki TanakaHirotaka YamaguchiWakahiko KanekoMichiaki SakamotoSatoshi IhidaTakasuke HayaseTae YoshikawaHiroshi Kanou
    • H01L29786
    • H01L27/12G02F1/134363H01L27/124H01L27/1248H01L27/1288
    • An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.
    • 沟道保护型有源矩阵基板,具有通过绝缘膜从一层到另一层隔离的栅电极,漏电极和像素电极。 有源矩阵基板由四个掩模制成。 栅极电极层,栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层(图6的102)和TFF区域。 经由形成为上层的第一钝化膜(图6的105)由第一钝化膜(图6的105)形成漏极电极层(图6的106)。 在其上形成的第二钝化膜(图6的107)中,其穿过第一和第二钝化膜的开口以及通过第二钝化膜的开口。 布线连接层由作为最上层设置的ITO(图6的108)形成。 在像素电极中设置存储电容单元,该第一钝化膜和第二钝化膜夹在栅电极和形成为相对于栅电极的共层的电极层之间。