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1. 发明授权

US08537297B2 Thin-film transistor array substrate, method of manufacturing same and liquid crystal display device 有权
公开(公告)号：US08537297B2
公开(公告)日：2013-09-17
申请号：US12693771
申请日：2010-01-26
申请人： Hirotaka Yamaguchi , Kenichi Takatori
发明人： Hirotaka Yamaguchi , Kenichi Takatori
IPC分类号： G02F1/136
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/1225 , H01L27/127 , H01L29/78681 , H01L29/7869
摘要： A vertically aligned thin-film transistor array substrate in which there is no reduction in aperture ratio includes an etching-stop layer formed on an insulating layer; a passivation layer formed on the insulating layer that includes the etching-stop layer; a depression formed in the passivation layer and hollowing the passivation layer to the surface of the etching-stop layer; and a pixel electrode, which is recessed in conformity with the depression, formed on the passivation layer that includes the depression; wherein the etching-stop layer comprises a transparent semiconductor.

2. 发明申请

US20090181483A1 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY 审中-公开
公开(公告)号：US20090181483A1
公开(公告)日：2009-07-16
申请号：US12403776
申请日：2009-03-13
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： H01L21/336 , H01L21/26 , H01L21/78
CPC分类号： G03B21/56 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012
摘要： A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.

3. 发明申请

US20090121374A1 METHOD OF MANUFACTURING CRYSTAL ORIENTED CERAMICS 审中-公开
标题翻译：制造晶体面向陶瓷的方法
公开(公告)号：US20090121374A1
公开(公告)日：2009-05-14
申请号：US12260191
申请日：2008-10-29
申请人： Daisuke Shibata , Masaya Nakamura , Hideki Kimura , Toshiatsu Nagaya , Hirotaka Yamaguchi
发明人： Daisuke Shibata , Masaya Nakamura , Hideki Kimura , Toshiatsu Nagaya , Hirotaka Yamaguchi
IPC分类号： C04B35/46 , B29C67/00
CPC分类号： C04B35/495 , C04B35/6262 , C04B2235/3201 , C04B2235/3203 , C04B2235/3255 , C04B2235/3267 , C04B2235/3294 , C04B2235/3298 , C04B2235/5292 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/768 , C04B2235/77 , C04B2235/787
摘要： A method of manufacturing a crystal oriented ceramics is disclosed. The method comprises preparing step, mixing step, shaping step and sintering method. At least one of anisotropically shaped powder, used as raw material, and a compact, formed by shaping step, is selected to have an orientation degree of 80% or more with a full width at half maximum (FWHM) of 15° or less according to a rocking curve method. A microscopic powder, having an average grain diameter one-third or less that of anisotropically shaped powder, is prepared for mixing therewith to prepare raw material mixture. The raw material mixture is shaped into the compact so as to allow oriented planes of anisotropically shaped powder to be oriented in a nearly identical direction. In a sintering step, anisotropically shaped powder and microscopic powder are sintered with each other to obtain the crystal oriented ceramics.
摘要翻译：公开了一种制造晶体取向陶瓷的方法。该方法包括制备步骤，混合步骤，成型步骤和烧结方法。选择通过成形步骤形成的各向异性粉末作为原料的至少一种粉末和通过成型步骤形成的成型体，具有80％以上的取向度，半高全宽（FWHM）为15°以下，根据到摇摆曲线法。制备具有各向异性粉末的三分之一以下的平均粒径的微细粉末与其混合以制备原料混合物。将原料混合物成型为成型体，以使得各向异性粉末的取向平面能够以几乎相同的方向取向。在烧结步骤中，将各向异性粉末和微观粉末彼此烧结，得到结晶取向陶瓷。

4. 发明申请

US20050190352A1 Method and apparatus for forming pattern on thin substrate or the like 有权
标题翻译：在薄基板等上形成图案的方法和装置
公开(公告)号：US20050190352A1
公开(公告)日：2005-09-01
申请号：US11118479
申请日：2005-05-02
申请人： Yukio Taniguchi , Hirotaka Yamaguchi , Susumu Tsujikawa
发明人： Yukio Taniguchi , Hirotaka Yamaguchi , Susumu Tsujikawa
IPC分类号： H01L21/027 , G03F7/20 , G03B27/42
CPC分类号： G03F7/70783 , G03F7/70791
摘要： A substrate processing apparatus of the present invention has a retaining base which retains a substrate, a device detecting undulation or thickness unevenness, and a control device which operates the detecting device. The substrate is deformed in a range of a field to be processed, by locally displacing the retaining base on the basis of the detected undulation or thickness unevenness of the substrate. Blurring of an image formed on the substrate can be thereby prevented.
摘要翻译：本发明的基板处理装置具有保持基板的保持基座，检测波动或厚度不均匀的装置以及操作检测装置的控制装置。通过基于检测到的基板的起伏或厚度不均匀性，局部地移动保持基板，使基板在待加工的场的范围内变形。因此可以防止形成在基板上的图像的模糊。

5. 发明授权

US06881535B2 Method for producing liquid crystal display apparatus 有权
标题翻译：液晶显示装置的制造方法
公开(公告)号：US06881535B2
公开(公告)日：2005-04-19
申请号：US10173923
申请日：2002-06-19
申请人： Hirotaka Yamaguchi
发明人： Hirotaka Yamaguchi
IPC分类号： G02F1/13 , G02F1/1335 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/28 , H01L21/336 , H01L29/786
CPC分类号： G02F1/133553 , G02F1/133555 , G02F1/1362 , G02F1/136227 , G02F1/1368
摘要： To provide a liquid crystal display apparatus exhibiting optimum display performance despite reduction in the number of PR(photolithography) processes, and a method for producing the apparatus. A method for producing a liquid crystal display apparatus having a first substrate including a thin film transistor and a reflector on an insulating substrate. An etching mask is formed on a metal layer formed on the insulating substrate and, using this etching mask, the metal layer is etched to form a constituent portion of the thin film transistor and protrusions. Only the etching mask is caused to reflow to cover exposed surface portions of the constituent portion of the thin film transistor and protrusions and near-by surface portions of the insulating substrate with the etching mask as the insulating substrate is partially exposed. Using the etching mask, recesses are formed in an exposed area of the insulating substrate. A reflector is formed on the protrusions and recesses.
摘要翻译：提供尽管PR（光刻）工艺的数量减少而呈现最佳显示性能的液晶显示装置及其制造方法。一种制造液晶显示装置的方法，该液晶显示装置具有在绝缘基板上具有薄膜晶体管和反射器的第一基板。在形成在绝缘基板上的金属层上形成蚀刻掩模，并且使用该蚀刻掩模蚀刻金属层以形成薄膜晶体管和突起的构成部分。仅使用蚀刻掩模来回流以覆盖薄膜晶体管的组成部分的暴露表面部分，并且使用作为绝缘基板的蚀刻掩模的绝缘基板的突出部和近旁表面部分露出。使用蚀刻掩模，在绝缘基板的暴露区域中形成凹部。反射器形成在突出部和凹部上。

6. 发明授权

US06514804B1 Thin-film transistor and fabrication method thereof 失效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06514804B1
公开(公告)日：2003-02-04
申请号：US09574407
申请日：2000-05-18
申请人： Hirotaka Yamaguchi
发明人： Hirotaka Yamaguchi
IPC分类号： H01L2184
CPC分类号： H01L29/66765 , H01L29/78669
摘要： A gate-insulating layer, intrinsic amorphous-silicon semiconductor layer, and ohmic contact layer are continuously formed so as to cover a gate electrode on a substrate to remove a natural oxide film from the surface of the ohmic contact layer by performing radio-frequency sputter etching before forming source and drain electrodes. After the natural oxide film is removed, a metallic layer mainly containing Al is formed on the gate-insulating layer and ohmic contact layer.
摘要翻译：连续地形成栅极绝缘层，本征非晶硅半导体层和欧姆接触层，以覆盖基板上的栅电极，以通过执行射频溅射从欧姆接触层的表面除去天然氧化膜在形成源极和漏极之前进行蚀刻。在除去自然氧化物膜之后，在栅极绝缘层和欧姆接触层上形成主要含有Al的金属层。

7. 发明申请

US20090051843A1 THIN FILM TRANSISTOR, INTEGRATED CIRCUIT, LIQUID CRYSTAL DISPLAY, METHOD OF PRODUCING THIN FILM TRANSISTOR, AND METHOD OF EXPOSURE USING ATTENUATED TYPE MASK 有权
标题翻译：薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法和使用衰减型掩模的曝光方法
公开(公告)号：US20090051843A1
公开(公告)日：2009-02-26
申请号：US12256683
申请日：2008-10-23
申请人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
发明人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： G02F1/1368 , H01L29/772
CPC分类号： H01L29/41733 , H01L29/66757
摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后利用i射线作为光线照射抗蚀剂，形成接触孔。

8. 发明申请

US20080019002A1 CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, AND PHASE SHIFTER 失效
标题翻译：结晶装置，结晶方法和相位改变
公开(公告)号：US20080019002A1
公开(公告)日：2008-01-24
申请号：US11861885
申请日：2007-09-26
申请人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio TANIGUCHI , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： G02B27/00
CPC分类号： H01L29/78675 , B23K26/066 , B23K26/073 , B23K26/0734 , G02B5/02 , G02B5/3083 , G03F1/28 , G03F1/34 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L29/66757 , Y10T117/10
摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.
摘要翻译：结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

9. 发明授权

US07138220B2 Method for producing liquid crystal display apparatus 有权
公开(公告)号：US07138220B2
公开(公告)日：2006-11-21
申请号：US11058671
申请日：2005-02-16
申请人： Hirotaka Yamaguchi
发明人： Hirotaka Yamaguchi
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/133553 , G02F1/133555 , G02F1/1362 , G02F1/136227 , G02F1/1368
摘要： To provide a liquid crystal display apparatus exhibiting optimum display performance despite reduction in the number of PR(photolithography) processes, and a method for producing the apparatus. A method for producing a liquid crystal display apparatus having a first substrate including a thin film transistor and a reflector on an insulating substrate. An etching mask is formed on a metal layer formed on the insulating substrate and, using this etching mask, the metal layer is etched to form a constituent portion of the thin film transistor and protrusions. Only the etching mask is caused to reflow to cover exposed surface portions of the constituent portion of the thin film transistor and protrusions and near-by surface portions of the insulating substrate with the etching mask as the insulating substrate is partially exposed. Using the etching mask, recesses are formed in an exposed area of the insulating substrate. A reflector is formed on the protrusions and recesses.

10. 发明申请

US20060240604A1 Thin film transistor, integrated circuit, liquid crystal display, method of producing thin film transistor, and method of exposure using attenuated type mask 有权
标题翻译：薄膜晶体管，集成电路，液晶显示器，薄膜晶体管的制造方法以及使用衰减型掩模的曝光方法
公开(公告)号：US20060240604A1
公开(公告)日：2006-10-26
申请号：US11397925
申请日：2006-04-03
申请人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
发明人： Hirotaka Yamaguchi , Masakiyo Matsumura , Yukio Taniguchi
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/41733 , H01L29/66757
摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后利用i射线作为光线照射抗蚀剂，形成接触孔。

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