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1. 发明授权

US06891196B2 Active matrix substrate and manufacturing method therefor 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US06891196B2
公开(公告)日：2005-05-10
申请号：US10617035
申请日：2003-07-11
申请人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
发明人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
IPC分类号： G02F1/1345 , G02F1/1333 , G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L27/12 , G02F1/134363 , H01L27/124 , H01L27/1248 , H01L27/1288
摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.
摘要翻译：通过绝缘膜在每一层隔离具有栅电极，漏电极和像素电极的沟道保护型有源矩阵基板。有源矩阵基板由四个掩模制成。栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层和TFF区域。漏极电极层由第一钝化膜形成，第一钝化膜形成为上层。在形成在第一钝化膜之上的第二钝化膜中，穿过第一和第二钝化膜的第一开口和通过第二钝化膜的第二开口。由设置为最上层的ITO形成布线连接层。夹持在栅电极和相对于栅电极形成为共层的电极层之间的第一和第二钝化膜的存储电容单元连接到像素电极。

2. 发明授权

US06674093B1 Active matrix substrate and manufacturing method therefor 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US06674093B1
公开(公告)日：2004-01-06
申请号：US09695321
申请日：2000-10-25
申请人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
发明人： Hiroaki Tanaka , Hirotaka Yamaguchi , Wakahiko Kaneko , Michiaki Sakamoto , Satoshi Ihida , Takasuke Hayase , Tae Yoshikawa , Hiroshi Kanou
IPC分类号： H01L29786
CPC分类号： H01L27/12 , G02F1/134363 , H01L27/124 , H01L27/1248 , H01L27/1288
摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode isolated from one another from layer to layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer (102 of FIG. 6) and a TFF area. A drain electrode layer (106 of FIG. 6) is formed by a first passivation film (105 of FIG. 6) via a first passivation film (105 of FIG. 6) formed as an upper layer. In a second passivation film (107 of FIG. 6) formed above it are bored an opening through the first and second passivation films and an opening through the second passivation film. A wiring connection layer is formed by ITO (108 of FIG. 6) provided as an uppermost layer. A storage capacitance unit, comprised of the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is provided in the pixel electrode.
摘要翻译：沟道保护型有源矩阵基板，具有通过绝缘膜从一层到另一层隔离的栅电极，漏电极和像素电极。有源矩阵基板由四个掩模制成。栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层（图6的102）和TFF区域。经由形成为上层的第一钝化膜（图6的105）由第一钝化膜（图6的105）形成漏极电极层（图6的106）。在其上形成的第二钝化膜（图6的107）中，其穿过第一和第二钝化膜的开口以及通过第二钝化膜的开口。布线连接层由作为最上层设置的ITO（图6的108）形成。在像素电极中设置存储电容单元，该第一钝化膜和第二钝化膜夹在栅电极和形成为相对于栅电极的共层的电极层之间。

3. 发明授权

US06788355B1 Active matrix LCD panel 有权
标题翻译：有源矩阵液晶面板
公开(公告)号：US06788355B1
公开(公告)日：2004-09-07
申请号：US09695212
申请日：2000-10-25
申请人： Satoshi Ihida , Hirotaka Yamaguchi , Hiroaki Tanaka , Takasuke Hayase , Hiroshi Kanou , Wakahiko Kaneko , Tae Miyahara , Michiaki Sakamoto , Shinichi Nakata
发明人： Satoshi Ihida , Hirotaka Yamaguchi , Hiroaki Tanaka , Takasuke Hayase , Hiroshi Kanou , Wakahiko Kaneko , Tae Miyahara , Michiaki Sakamoto , Shinichi Nakata
IPC分类号： G02F11343
CPC分类号： G02F1/13458 , G02F1/1362 , G02F1/1368 , G02F2001/136231
摘要： A method for fabricating an active matrix LCD panel for use in an active matrix LCD device includes the step of forming a passivation layer acting as a channel protection layer for protecting an amorphous silicon active layer, thereby reducing the number of photolithographic steps. A transparent conductive film is used for forming a gate electrode and a pixel electrode before formation of an amorphous silicon film for the TFTs.
摘要翻译：制造用于有源矩阵LCD器件的有源矩阵LCD面板的方法包括形成用作保护非晶硅有源层的沟道保护层的钝化层的步骤，从而减少光刻步骤的数量。在形成用于TFT的非晶硅膜之前，使用透明导电膜来形成栅电极和像素电极。

4. 发明授权

US06890783B2 Active matrix substrate plate and manufacturing method therefor 失效
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US06890783B2
公开(公告)日：2005-05-10
申请号：US10242011
申请日：2002-09-12
申请人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
发明人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L21/00 , H01L21/3205 , H01L21/336 , H01L21/84 , H01L23/52 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/036
CPC分类号： G02F1/134363
摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
摘要翻译：使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。在步骤1中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。在步骤2中，层叠由非晶硅层和n + +非晶硅层构成的栅绝缘层和半导体层，以提供TFT部分的半导体层。在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极，通过蚀刻除去沟道间隙的+非晶硅层。在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

5. 发明授权

US06632696B2 Manufacturing method of active matrix substrate plate and manufacturing method therefor 有权
标题翻译：有源矩阵基板的制造方法及其制造方法
公开(公告)号：US06632696B2
公开(公告)日：2003-10-14
申请号：US09745657
申请日：2000-12-20
申请人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
发明人： Shigeru Kimura , Takahiko Watanabe , Tae Yoshikawa , Hiroyuki Uchida , Shusaku Kido , Shinichi Nakata , Tsutomu Hamada , Hisanobu Shimodouzono , Satoshi Doi , Toshihiko Harano , Akitoshi Maeda , Satoshi Ihida , Hiroaki Tanaka , Takasuke Hayase , Shouichi Kuroha , Hirofumi Ihara , Kazushige Takechi
IPC分类号： H01L2100
CPC分类号： G02F1/134363
摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.
摘要翻译：使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。在步骤 1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到提供TFT部分的半导体层。在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。

6. 发明授权

US06740596B2 Manufacturing method of active matrix substrate 有权
标题翻译：有源矩阵基板的制造方法
公开(公告)号：US06740596B2
公开(公告)日：2004-05-25
申请号：US09903244
申请日：2001-07-11
申请人： Takasuke Hayase , Hiroaki Tanaka , Shusaku Kido , Toshihiko Harano
发明人： Takasuke Hayase , Hiroaki Tanaka , Shusaku Kido , Toshihiko Harano
IPC分类号： H01L21302
CPC分类号： H01L29/66765 , G02F1/136204 , G02F1/1368 , H01L27/12 , H01L29/41733 , H01L29/458 , H01L29/78633
摘要： The photolithography processes for connecting the first conductive film pattern, which is a lower layer such as a gate electrode of a TFT, to a second conductive film pattern, which is an upper layer such as a source/drain electrode of a TFT are reduced by utilizing laminated films and a resist pattern formed thereon having different film thicknesses. Laminated films constituting the source/drain electrode are formed by depositing films on an insulating substrate on which the first conductive film pattern is formed, and the resist pattern is formed on the top layer of the laminated films, and then utilizing the film thickness difference of the resist pattern and the film composition of the laminated films, the short circuited wiring between the gate electrode and the source/drain electrode for an Electro-Static-Discharge protection circuit of the active matrix substrate can be formed by less photolithography processes than that in the manufacturing of the conventional active matrix substrate.
摘要翻译：将作为诸如TFT的栅电极的下层的第一导电膜图案与作为诸如TFT的源/漏电极的上层的第二导电膜图案连接的光刻工艺被减少利用层叠膜和形成在其上的具有不同膜厚度的抗蚀剂图案。构成源极/漏极的叠层膜通过在其上形成有第一导电膜图案的绝缘基板上沉积膜形成，并且在层压膜的顶层上形成抗蚀剂图案，然后利用膜厚度差层叠膜的抗蚀剂图案和膜组成，有源矩阵基板的静电放电保护电路的栅极电极和源极/漏极之间的短路布线可以通过较少的光刻工艺形成，常规有源矩阵基板的制造。

7. 发明授权

US07663146B2 Active matrix addressing liquid-crystal display device 有权
标题翻译：有源矩阵寻址液晶显示装置
公开(公告)号：US07663146B2
公开(公告)日：2010-02-16
申请号：US10028778
申请日：2001-12-28
申请人： Hiroaki Tanaka , Akira Fujita , Shigeru Kimura , Akitoshi Maeda , Takasuke Hayase
发明人： Hiroaki Tanaka , Akira Fujita , Shigeru Kimura , Akitoshi Maeda , Takasuke Hayase
IPC分类号： G02F1/1343
CPC分类号： H01L29/4908 , G02F1/13458 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L29/458
摘要： An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.
摘要翻译：提供了一种有源矩阵寻址LCD器件，其具有形成有导电线的有源矩阵基板，其抑制了AI小丘，而不会使线的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了连接可靠性。该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al文件可以用Al合金代替。

8. 发明申请

US20070013852A1 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US20070013852A1
公开(公告)日：2007-01-18
申请号：US11523612
申请日：2006-09-20
申请人： Shingo Saigo , Takasuke Hayase , Makoto Horinouchi , Hideto Motoshima , Akitoshi Maeda
发明人： Shingo Saigo , Takasuke Hayase , Makoto Horinouchi , Hideto Motoshima , Akitoshi Maeda
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133345 , G02F1/136227
摘要： A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.
摘要翻译：显示部分被扫描线和信号线划分成设置像素的部分。对于所有像素，不形成用于将公共布线和公共电极连接在一起的接触孔，而是以Z字形排列。

9. 发明申请

US20050227399A1 Method of fabricating liquid crystal display device 有权
标题翻译：制造液晶显示装置的方法
公开(公告)号：US20050227399A1
公开(公告)日：2005-10-13
申请号：US11133315
申请日：2005-05-20
申请人： Takasuke Hayase , Keiko Yamada , Masami Yamashita , Shinichi Nakata , Akitoshi Maeda
发明人： Takasuke Hayase , Keiko Yamada , Masami Yamashita , Shinichi Nakata , Akitoshi Maeda
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L21/77 , H01L21/84 , H01L27/146 , H01L29/15 , H01L21/00 , H01L29/04
CPC分类号： G02F1/136227 , G02F1/134363 , G02F2202/104 , H01L27/124 , H01L27/1248 , H01L27/14621
摘要： The method of fabricating a liquid crystal display device includes the steps of (a) fabricating a switching device on a substrate, (b) forming an interlayer insulating film on the substrate such that the switching device is covered with the interlayer insulating film, and (c) forming a transparent electrode on the interlayer insulating film, the transparent electrode being electrically connected to the switching device through the interlayer insulating film, the step (c) including (c1) depositing electrically conductive, transparent and amorphous material on the interlayer insulating film, (c2) patterning the material into the transparent electrode, and (c3) turning the transparent electrode into polysilicon by thermal annealing carried out after formation of an alignment film.
摘要翻译：制造液晶显示装置的方法包括以下步骤：（a）在基板上制造开关装置，（b）在基板上形成层间绝缘膜，使得开关装置被层间绝缘膜覆盖，以及（ c）在层间绝缘膜上形成透明电极，透明电极通过层间绝缘膜与开关器件电连接，步骤（c）包括（c1）在层间绝缘膜上沉积导电，透明和非晶材料，（c2）将材料图案化成透明电极，（c3）通过在形成取向膜之后进行的热退火将透明电极转换成多晶硅。

10. 发明授权

US07609350B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07609350B2
公开(公告)日：2009-10-27
申请号：US11523612
申请日：2006-09-20
申请人： Shingo Saigo , Takasuke Hayase , Makoto Horinouchi , Hideto Motoshima , Akitoshi Maeda
发明人： Shingo Saigo , Takasuke Hayase , Makoto Horinouchi , Hideto Motoshima , Akitoshi Maeda
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133345 , G02F1/136227
摘要： A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.
摘要翻译：显示部分被扫描线和信号线划分成设置像素的部分。对于所有像素，不形成用于将公共布线和公共电极连接在一起的接触孔，而是以Z字形排列。

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