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1. 发明申请

US20090147405A1 METHOD FOR MANUFACTURING MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING MEDIUM MANUFACTURED BY THE SAME, AND MAGNETIC RECORDING APPARATUS INCORPORATING THE MAGNETIC RECORDING MEDIUM 审中-公开
标题翻译：用于制造磁记录介质的方法，由其制造的磁记录介质和装有磁记录介质的磁记录装置
公开(公告)号：US20090147405A1
公开(公告)日：2009-06-11
申请号：US12326634
申请日：2008-12-02
申请人： Hirotaka Oshima , Hideyuki Kikuchi , Takeshi Morikawa , Hiroshi Nakao , Ken-ichi Itoh , Hideki Masuda , Kazuyuki Nishio
发明人： Hirotaka Oshima , Hideyuki Kikuchi , Takeshi Morikawa , Hiroshi Nakao , Ken-ichi Itoh , Hideki Masuda , Kazuyuki Nishio
IPC分类号： G11B5/48 , B29C39/00 , G11B5/62
CPC分类号： G11B5/855
摘要： A method for manufacturing a magnetic recording medium which has a substrate and a magnetic layer formed on the substrate, the method including: forming the magnetic layer over a convexo-concave pattern provided on a surface of a mold, and releasing the mold from the magnetic layer formed on the substrate.
摘要翻译：一种磁性记录介质的制造方法，其特征在于，在基板上形成有基板和磁性层，该方法包括：在设置在模具表面上的凹凸图案上形成磁性层，层。

2. 发明申请

US20080220290A1 Magnetic recording medium and manufacturing method for the same 审中-公开
标题翻译：磁记录介质及其制造方法相同
公开(公告)号：US20080220290A1
公开(公告)日：2008-09-11
申请号：US12006062
申请日：2007-12-28
申请人： Ken-ichi Itoh , Hideyuki Kikuchi , Hiroshi Nakao , Hirotaka Oshima , Takahiro Umada , Hideki Masuda , Kazuyuki Nishio , Mitsuo Takeuchi , Hiroaki Date
发明人： Ken-ichi Itoh , Hideyuki Kikuchi , Hiroshi Nakao , Hirotaka Oshima , Takahiro Umada , Hideki Masuda , Kazuyuki Nishio , Mitsuo Takeuchi , Hiroaki Date
IPC分类号： G11B5/65 , B44C1/22
CPC分类号： G11B5/855
摘要： To provide a magnetic recording medium manufacturing method capable of transferring a pattern that can serve as a source for forming anodized alumina-nanoholes with high precision and realizing high productivity, and a large-capacity magnetic recording medium capable of achieving high density recording. The method includes forming a metallic layer on a concavo-convex pattern formed on a surface of a mold; bonding a substrate using an adhesive to a surface of the metallic layer on the side opposite to the mold; separating the mold from the metallic layer; forming, through nanohole formation treatment, a porous layer in which a plurality of nanoholes are formed to orient in a direction substantially perpendicular to a substrate plane by using as a nanohole source a concavo-convex pattern which has been formed by transferring the concavo-convex pattern in the mold to the metallic layer; and charging a magnetic material inside the nanoholes.
摘要翻译：提供一种磁记录介质制造方法，能够高精度地转印可以作为形成阳极化氧化铝 - 纳米孔的源的图案，实现高生产率的磁记录介质制造方法，以及能够实现高密度记录的大容量磁记录介质。该方法包括在形成在模具表面上的凹凸图案上形成金属层; 使用粘合剂将基板与模具相对的一侧的金属层的表面接合; 将模具与金属层分离; 通过纳米孔形成处理形成多孔层，其中通过使用作为纳米孔源的凹凸图案，其中形成多个纳米孔以在基本垂直于基底平面的方向上取向，所述凹凸图案通过将凹凸模具中的金属层图案; 并在纳孔内充入磁性材料。

3. 发明申请

US20130073270A1 SIMULATION APPARATUS AND SIMULATION METHOD 有权
标题翻译：模拟装置和模拟方法
公开(公告)号：US20130073270A1
公开(公告)日：2013-03-21
申请号：US13558561
申请日：2012-07-26
申请人： Atsushi Furuya , Yuji Uehara , Hirotaka Oshima
发明人： Atsushi Furuya , Yuji Uehara , Hirotaka Oshima
IPC分类号： G06G7/48
CPC分类号： H01F41/0246 , G01R33/0064 , G06F17/5009 , G06F2217/16 , H01F1/36
摘要： A computer-readable medium stores a magnetic substrate simulation program causing a computer to execute a process that includes calculating an effective magnetic field for each area of an element in the magnetic substrate, when magnetization of each area changes and based on a magnetic field generated from magnetic energy in each area and a rate of change of magnetization working in a direction inhibiting change in the average magnetization of the areas; obtaining for each area and based on the calculated effective magnetic fields and magnetization of each area, changes in magnetization and calculating for each area, magnetization after the changes; judging based on magnetization of each area before and after the changes, whether magnetization in the element converges; and storing a combination of the average magnetization of the areas for which magnetization in the given element converges and a static magnetic field based on the average magnetization.
摘要翻译：计算机可读介质存储磁性基板模拟程序，使得计算机执行一个处理，该处理包括：当每个区域的磁化改变时，基于从磁场中产生的磁场，计算磁性基板中元件的每个区域的有效磁场每个区域中的磁能和在抑制区域的平均磁化的变化的方向上的磁化作用的变化率; 获得每个区域，并根据计算的有效磁场和每个区域的磁化，改变每个区域的磁化强度和计算磁化强度; 根据变化前后各区域的磁化判断，元素中的磁化是否收敛; 并且存储基于平均磁化强度的给定元件中的磁化强度的区域的平均磁化强度与平均磁化强度的组合。

4. 发明授权

US07450351B2 Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof 失效
标题翻译：具有电流 - 垂直于平面结构的磁阻元件，磁头及其磁存储装置
公开(公告)号：US07450351B2
公开(公告)日：2008-11-11
申请号：US11156870
申请日：2005-06-20
申请人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/14 , H01F10/30 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.
摘要翻译：公开了一种包括固定磁性层，第一非磁性层，自由磁性层和第二非磁性层的CPP型结构的磁阻元件。磁阻元件包括位于自由磁性层和第一非磁性层之间的第一界面层和位于自由磁性层和第二非磁性层之间的第二界面层。第一界面层和第二界面层包括主要具有CoNiFe的材料。

5. 发明申请

US20110208468A1 POWER DISTRIBUTION NETWORK ESTIMATION DEVICE 有权
标题翻译：功率分配网络估计设备
公开(公告)号：US20110208468A1
公开(公告)日：2011-08-25
申请号：US13029392
申请日：2011-02-17
申请人： Hiroshi YAMAMOTO , Toshiaki Funakubo , Nobutsugu Fujino , Hirotaka Oshima
发明人： Hiroshi YAMAMOTO , Toshiaki Funakubo , Nobutsugu Fujino , Hirotaka Oshima
IPC分类号： G01R31/00
CPC分类号： H02J13/002 , Y02E60/7815 , Y04S40/121
摘要： A device that estimates a positional relationship between loads individually connected through sensors to electric power-supply ends provided in a power distribution network includes a communication unit configured to change a resistance value located between each of electric power-supply ends and a ground terminal of each of sensors and measure a voltage value produced between each of the electric power-supply ends and the ground terminal; and a determination unit configured to acquire voltage values from the two selected sensors from among the sensors after a resistance value of one of the two sensors that has a higher acquired voltage value is changed, calculate a ratio between voltage values acquired before and after the resistance value is changed, and determine that the two sensors are connected to a branch circuit in a same system in the power distribution network, when each ratio about the two sensors is within a specified range.
摘要翻译：估计在配电网中提供的通过传感器单独连接到供电端的负载之间的位置关系的装置包括：通信单元，被配置为改变位于每个电源端和每个电源端的接地端之间的电阻值并测量在每个电源端和接地端之间产生的电压值; 以及确定单元，被配置为在具有较高获取电压值的两个传感器之一的电阻值改变之后从传感器中从两个选择的传感器获取电压值，计算电阻之前和之后获取的电压值之间的比率当两个传感器的每个比例在规定范围内时，确定两个传感器连接到配电网络中相同系统中的分支电路。

6. 发明授权

US07428130B2 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US07428130B2
公开(公告)日：2008-09-23
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

7. 发明授权

US07428127B2 CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element 失效
标题翻译： CPP磁阻效应元件和具有CPP磁阻效应元件的磁存储器件
公开(公告)号：US07428127B2
公开(公告)日：2008-09-23
申请号：US11042962
申请日：2005-01-25
申请人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , H01L43/08 , H01L43/12
摘要： A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free magnetization layer and the fixed magnetization layer. An insulating layer and a magnetic layer including magnetic atoms are provided between any two of the non-magnetic intermediate layers.
摘要翻译： CPP磁阻效应元件包括自由磁化层，固定磁化层和形成在自由磁化层和固定磁化层之间的多个导电非磁性中间层。在任意两个非磁性中间层之间设置绝缘层和包含磁性原子的磁性层。

8. 发明授权

US06927952B2 CPP GMR free layer having ferromagnetic layers with parallel magnetization separated by non-magnetic layer 失效
标题翻译：具有由非磁性层分离的具有平行磁化的铁磁层的CPP GMR自由层
公开(公告)号：US06927952B2
公开(公告)日：2005-08-09
申请号：US10114767
申请日：2002-04-03
申请人： Yutaka Shimizu , Hirotaka Oshima , Keiichi Nagasaka , Yoshihiko Seyama , Atsushi Tanaka
发明人： Yutaka Shimizu , Hirotaka Oshima , Keiichi Nagasaka , Yoshihiko Seyama , Atsushi Tanaka
IPC分类号： G11B5/00 , G11B5/012 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , H01L43/08
摘要： A magnetoresistive device includes a laminated film, and a mechanism for applying sense current in a direction of lamination in the laminated film, wherein the laminated film includes a first ferromagnetic layer having a substantially fixed direction of magnetization, a second ferromagnetic layer having a freely variable direction of magnetization according to an external magnetic field, the second ferromagnetic layer including a non-magnetic metal layer, and two or more ferromagnetic metal layers separated from each other by the non-magnetic metal layer in the direction of lamination, and a non-magnetic intermediate layer that separates the first and second ferromagnetic layer from each other.
摘要翻译：磁阻装置包括层叠膜，以及用于在叠层膜中层叠方向施加感应电流的机构，其中层压膜包括具有大体上固定的磁化方向的第一铁磁层，具有可自由变化的第二铁磁层根据外部磁场的磁化方向，所述第二铁磁层包括非磁性金属层，以及两个或多个非磁性金属层在层叠方向上彼此分离的强磁性金属层，磁性中间层，其将第一和第二铁磁层彼此分离。

9. 发明申请

US20050111142A1 Electromagnetic transducer element capable of suppressing rise in temperature of electromagnetic transducer film 审中-公开
标题翻译：能够抑制电磁换能器膜温度升高的电磁换能器元件
公开(公告)号：US20050111142A1
公开(公告)日：2005-05-26
申请号：US11024344
申请日：2004-12-28
申请人： Hirotaka Oshima
发明人： Hirotaka Oshima
IPC分类号： G01R33/09 , G11B5/127 , G11B5/31 , G11B5/33 , G11B5/39 , G11B33/14 , H01L43/08
CPC分类号： G11B5/3133 , B82Y25/00 , G01R33/093 , G11B5/39 , G11B33/1406 , H01L43/08
摘要： An electrically conductive body is connected to an electromagnetic transducer film in a electromagnetic transducer element so as to form a path for current supplied to the electromagnetic transducer film. Heat is generated based on the electric resistance of the electromagnetic transducer film. A thermoelectric element such as a Peltier element is incorporated in the electrically conductive body. The thermoelectric element serves to absorb the heat. The supplied current is also utilized to drive the thermoelectric element. A wiring pattern and a power source dedicated to the thermoelectric element can be omitted in the electromagnetic transducer element. The electromagnetic transducer element is thus allowed to suppress rise in the temperature of the electromagnetic transducer film with a simple structure.
摘要翻译：导电体连接到电磁换能器元件中的电磁换能器膜，以形成供给电磁换能器膜的电流路径。基于电磁换能器膜的电阻产生热量。诸如珀耳帖元件的热电元件被并入导电体中。热电元件用于吸收热量。供电电流也用于驱动热电元件。可以在电磁换能器元件中省略专用于热电元件的布线图案和电源。因此，电磁换能器元件能够以简单的结构抑制电磁换能器膜的温度上升。

10. 发明申请

US20050030673A1 Current-perpendicular-to-the-plane structure magnetoresistive element having sufficient sensitivity 失效
标题翻译：电流垂直于平面结构的磁阻元件具有足够的灵敏度
公开(公告)号：US20050030673A1
公开(公告)日：2005-02-10
申请号：US10940941
申请日：2004-09-14
申请人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.
摘要翻译：电流垂直于平面（CPP）结构的磁阻元件包括接触磁阻膜的电极层。限定低电阻区域沿着从磁头滑块的介质相对表面暴露的前端沿着磁阻膜的边界向后延伸。高电阻区域被限定为从低电阻区域的后端沿着边界向后延伸。高电阻区域的电阻率高于低电阻区域的电阻率。高电阻区域用于限制最接近介质相对表面的感测电流的路径。允许感测电流集中在最接近磁阻膜中的介质相对表面的位置。磁化膜在介质相对表面附近的磁阻膜中充分旋转。 CPP结构磁阻元件保持电阻的充分变化。可以保持足够的灵敏度。

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