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1. 发明授权

US07450351B2 Magnetoresistive element having current-perpendicular-to-plane structure, magnetic head, and magnetic memory apparatus thereof 失效
标题翻译：具有电流 - 垂直于平面结构的磁阻元件，磁头及其磁存储装置
公开(公告)号：US07450351B2
公开(公告)日：2008-11-11
申请号：US11156870
申请日：2005-06-20
申请人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/14 , H01F10/30 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.
摘要翻译：公开了一种包括固定磁性层，第一非磁性层，自由磁性层和第二非磁性层的CPP型结构的磁阻元件。磁阻元件包括位于自由磁性层和第一非磁性层之间的第一界面层和位于自由磁性层和第二非磁性层之间的第二界面层。第一界面层和第二界面层包括主要具有CoNiFe的材料。

2. 发明授权

US07312957B2 Current-perpendicular-to-the-plane structure magnetoresistive element having sufficient sensitivity 失效
标题翻译：电流垂直于平面结构的磁阻元件具有足够的灵敏度
公开(公告)号：US07312957B2
公开(公告)日：2007-12-25
申请号：US10940941
申请日：2004-09-14
申请人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.
摘要翻译：电流垂直于平面（CPP）结构的磁阻元件包括接触磁阻膜的电极层。限定低电阻区域沿着从磁头滑块的介质相对表面暴露的前端沿着磁阻膜的边界向后延伸。高电阻区域被限定为从低电阻区域的后端沿着边界向后延伸。高电阻区域的电阻率高于低电阻区域的电阻率。高电阻区域用于限制最接近介质相对表面的感测电流的路径。允许感测电流集中在最接近磁阻膜中的介质相对表面的位置。磁化膜在介质相对表面附近的磁阻膜中充分旋转。 CPP结构磁阻元件保持电阻的充分变化。可以保持足够的灵敏度。

3. 发明申请

US20060209473A1 Magnetoresistive element, magnetic head, and magnetic memory apparatus 失效
标题翻译：磁阻元件，磁头和磁存储装置
公开(公告)号：US20060209473A1
公开(公告)日：2006-09-21
申请号：US11156870
申请日：2005-06-20
申请人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Keiichi Nagasaka , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/14 , H01F10/30 , H01F10/3272 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element of a CPP type configuration including a fixed magnetic layer, a first non-magnetic layer, a free magnetic layer, and a second non-magnetic layer is disclosed. The magnetoresistive element includes a first interface layer situated between the free magnetic layer and the first non-magnetic layer, and a second interface layer situated between the free magnetic layer and the second non-magnetic layer. The first interface layer and the second interface layer include a material mainly having CoNiFe.
摘要翻译：公开了一种包括固定磁性层，第一非磁性层，自由磁性层和第二非磁性层的CPP型结构的磁阻元件。磁阻元件包括位于自由磁性层和第一非磁性层之间的第一界面层和位于自由磁性层和第二非磁性层之间的第二界面层。第一界面层和第二界面层包括主要具有CoNiFe的材料。

4. 发明申请

US20050264953A1 Magneto-resistive element, magnetic head and megnetic storage apparatus 失效
标题翻译：磁阻元件，磁头和储能装置
公开(公告)号：US20050264953A1
公开(公告)日：2005-12-01
申请号：US11137008
申请日：2005-05-25
申请人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01F10/14 , H01F10/20 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F10/14 , H01F10/20 , H01F10/3272 , H01F10/3295
摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
摘要翻译：磁阻元件采用CPP结构，并且包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻控制层由导电铁磁氧化物制成。

5. 发明申请

US20050152076A1 CPP magnetoresistive effect element, manufacturing method thereof, and magnetic storage device having a CPP magnetoresistive effect element 失效
标题翻译： CPP磁阻效应元件及其制造方法以及具有CPP磁阻效应元件的磁存储器件
公开(公告)号：US20050152076A1
公开(公告)日：2005-07-14
申请号：US11042962
申请日：2005-01-25
申请人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39 , H01L43/08 , H01L43/12
CPC分类号： G11B5/3903 , H01L43/08 , H01L43/12
摘要： A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free magnetization layer and the fixed magnetization layer. An insulating layer and a magnetic layer including magnetic atoms are provided between any two of the non-magnetic intermediate layers.
摘要翻译： CPP磁阻效应元件包括自由磁化层，固定磁化层和形成在自由磁化层和固定磁化层之间的多个导电非磁性中间层。在任意两个非磁性中间层之间设置绝缘层和包含磁性原子的磁性层。

6. 发明授权

US07428127B2 CPP magnetoresistive effect element and magnetic storage device having a CPP magnetoresistive effect element 失效
标题翻译： CPP磁阻效应元件和具有CPP磁阻效应元件的磁存储器件
公开(公告)号：US07428127B2
公开(公告)日：2008-09-23
申请号：US11042962
申请日：2005-01-25
申请人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Keiichi Nagasaka , Yoshihiko Seyama , Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3903 , H01L43/08 , H01L43/12
摘要： A CPP magnetoresistive effect element includes a free magnetization layer, a fixed magnetization layer, and a plurality of conductive non-magnetic intermediate layers formed between the free magnetization layer and the fixed magnetization layer. An insulating layer and a magnetic layer including magnetic atoms are provided between any two of the non-magnetic intermediate layers.
摘要翻译： CPP磁阻效应元件包括自由磁化层，固定磁化层和形成在自由磁化层和固定磁化层之间的多个导电非磁性中间层。在任意两个非磁性中间层之间设置绝缘层和包含磁性原子的磁性层。

7. 发明授权

US06927952B2 CPP GMR free layer having ferromagnetic layers with parallel magnetization separated by non-magnetic layer 失效
标题翻译：具有由非磁性层分离的具有平行磁化的铁磁层的CPP GMR自由层
公开(公告)号：US06927952B2
公开(公告)日：2005-08-09
申请号：US10114767
申请日：2002-04-03
申请人： Yutaka Shimizu , Hirotaka Oshima , Keiichi Nagasaka , Yoshihiko Seyama , Atsushi Tanaka
发明人： Yutaka Shimizu , Hirotaka Oshima , Keiichi Nagasaka , Yoshihiko Seyama , Atsushi Tanaka
IPC分类号： G11B5/00 , G11B5/012 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , H01L43/08
摘要： A magnetoresistive device includes a laminated film, and a mechanism for applying sense current in a direction of lamination in the laminated film, wherein the laminated film includes a first ferromagnetic layer having a substantially fixed direction of magnetization, a second ferromagnetic layer having a freely variable direction of magnetization according to an external magnetic field, the second ferromagnetic layer including a non-magnetic metal layer, and two or more ferromagnetic metal layers separated from each other by the non-magnetic metal layer in the direction of lamination, and a non-magnetic intermediate layer that separates the first and second ferromagnetic layer from each other.
摘要翻译：磁阻装置包括层叠膜，以及用于在叠层膜中层叠方向施加感应电流的机构，其中层压膜包括具有大体上固定的磁化方向的第一铁磁层，具有可自由变化的第二铁磁层根据外部磁场的磁化方向，所述第二铁磁层包括非磁性金属层，以及两个或多个非磁性金属层在层叠方向上彼此分离的强磁性金属层，磁性中间层，其将第一和第二铁磁层彼此分离。

8. 发明申请

US20050030673A1 Current-perpendicular-to-the-plane structure magnetoresistive element having sufficient sensitivity 失效
标题翻译：电流垂直于平面结构的磁阻元件具有足够的灵敏度
公开(公告)号：US20050030673A1
公开(公告)日：2005-02-10
申请号：US10940941
申请日：2004-09-14
申请人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/33 , G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) structure magnetoresistive element includes an electrode layer contacting a magnetoresistive film. A low resistance region is defined to extend rearward along the boundary of the magnetoresistive film from the front end exposed at the medium-opposed surface of the head slider. A high resistance region is defined to extend rearward along the boundary from the rear end of the low resistance region. The high resistance region has a resistivity higher than that of the low resistance region. The high resistance region serves to restrict the path of a sensing current nearest to the medium-opposed surface. The sensing current is allowed to concentrate at a position closest to the medium-opposed surface in the magnetoresistive film. Magnetization sufficiently rotates in the magnetoresistive film near the medium-opposed surface. The CPP structure magnetoresistive element maintains a sufficient variation in the resistance. A sufficient sensitivity can be maintained.
摘要翻译：电流垂直于平面（CPP）结构的磁阻元件包括接触磁阻膜的电极层。限定低电阻区域沿着从磁头滑块的介质相对表面暴露的前端沿着磁阻膜的边界向后延伸。高电阻区域被限定为从低电阻区域的后端沿着边界向后延伸。高电阻区域的电阻率高于低电阻区域的电阻率。高电阻区域用于限制最接近介质相对表面的感测电流的路径。允许感测电流集中在最接近磁阻膜中的介质相对表面的位置。磁化膜在介质相对表面附近的磁阻膜中充分旋转。 CPP结构磁阻元件保持电阻的充分变化。可以保持足够的灵敏度。

9. 发明授权

US07486487B2 Magneto-resistive element, magnetic head and magnetic storage apparatus 失效
标题翻译：磁阻元件，磁头和磁存储装置
公开(公告)号：US07486487B2
公开(公告)日：2009-02-03
申请号：US11137008
申请日：2005-05-25
申请人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
发明人： Hirotaka Oshima , Reiko Kondo , Arata Jogo , Yutaka Shimizu , Atsushi Tanaka
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996 , H01F10/14 , H01F10/20 , H01F10/3272 , H01F10/3295
摘要： A magneto-resistive element employs a CPP structure and includes an antiferromagnetic layer, a pinned magnetization layer, a nonmagnetic intermediate layer and a free magnetization layer that are successively stacked. The pinned magnetization layer includes a first pinned magnetization layer, a nonmagnetic coupling layer and a second pinned magnetization layer that are successively stacked on the antiferromagnetic layer, and the first and second pinned magnetization layers are antiferromagnetically exchange-coupled. One of the first and second pinned magnetization layer is formed by a ferromagnetic layer made of a ferromagnetic material at least including one element or alloy selected from a group consisting of Co, Fe, Ni and alloys thereof, and the other is formed by a resistance control layer made of a conductive ferromagnetic oxide.
摘要翻译：磁阻元件采用CPP结构，并包括依次堆叠的反铁磁层，钉扎磁化层，非磁性中间层和自由磁化层。钉扎磁化层包括依次堆叠在反铁磁层上的第一钉扎磁化层，非磁性耦合层和第二钉扎磁化层，并且第一和第二钉扎磁化层是反铁磁交换耦合的。第一和第二钉扎磁化层中的一个由铁磁材料制成的铁磁层形成，铁磁材料至少包括选自Co，Fe，Ni及其合金中的一种元素或合金，另一种是由电阻控制层由导电铁磁氧化物制成。

10. 发明授权

US07428130B2 Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效
标题翻译：磁阻元件，磁头，磁存储单元和磁存储单元
公开(公告)号：US07428130B2
公开(公告)日：2008-09-23
申请号：US11410315
申请日：2006-04-25
申请人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
发明人： Arata Jogo , Hirotaka Oshima , Takahiro Ibusuki , Yutaka Shimizu , Takuya Uzumaki
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译：包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。自由磁化层包括CoMnAl。在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20），点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。

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