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    • 3. 发明申请
    • Magnetoresistive effect device and method of manufacturing ferromagnetic structure
    • 磁阻效应器件及制造铁磁结构的方法
    • US20070217083A1
    • 2007-09-20
    • US11483565
    • 2006-07-11
    • Keiichi NagasakaHirotaka OshimaArata JogoYutaka Shimizu
    • Keiichi NagasakaHirotaka OshimaArata JogoYutaka Shimizu
    • G11B5/33
    • B82Y10/00B82Y25/00G01R33/093G11B5/3929G11B2005/3996
    • A spin valve film has a lamination structure of a pinned layer, a non-magnetic intermediate layer and a free layer. The pinned layer is made of ferromagnetic material and has a fixed magnetization direction. The non-magnetic intermediate layer is made of non-magnetic conductive material. The free layer is made of ferromagnetic material and changes a magnetization direction by external magnetic field. Electrodes let current flow through the spin valve film in a lamination direction. At least one of the pinned layer and the free layer includes a lamination portion of a first layer and a second layer stacked alternately. The first layer has a composition ratio of elements presenting ferromagnetism higher than that in the second layer. The second layer has a composition ratio of elements presenting non-magnetism higher than that in the first layer. The lamination portion includes at least two first layers and at least one second layer.
    • 自旋阀膜具有钉扎层,非磁性中间层和自由层的层压结构。 钉扎层由铁磁材料制成,具有固定的磁化方向。 非磁性中间层由非磁性导电材料制成。 自由层由铁磁材料制成,并通过外部磁场改变磁化方向。 电极使电流在层叠方向上流过自旋阀膜。 被钉扎层和自由层中的至少一个包括交替堆叠的第一层和第二层的层压部分。 第一层具有高于第二层中的铁磁性元素的组成比。 第二层具有高于第一层中的非磁性元素的组成比。 层压部分包括至少两个第一层和至少一个第二层。