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1. 发明申请

US20090211706A1 ETCHING ENDPOINT DETERMINATION METHOD 有权
标题翻译：蚀刻端点确定方法
公开(公告)号：US20090211706A1
公开(公告)日：2009-08-27
申请号：US12189883
申请日：2008-08-12
申请人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
发明人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
IPC分类号： C23F1/00
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step. An endpoint of etching processing is determined based in the distances in the time-base direction obtained at the second step.
摘要翻译：精确地检测在蚀刻终点附近发生的发光强度的微观变化，从而快速确定蚀刻的终点。一种蚀刻终点确定方法，用于确定将处理气体引入真空室的等离子体蚀刻装置中的蚀刻处理的终点，通过向引入的处理气体供给高频能量来产生等离子体，并使用所产生的等离子体进行等离子体处理在存储在所述室中的工件上包括：对由所述真空室中产生的等离子体发射的光进行预设波长的光的采样的步骤，获取特定波长的采样光的发光强度作为时序数据，并基于获取的时间序列数据计算回归线; 以及在第一步骤获得的回归线和时间序列数据之间计算时基方向上的距离的步骤。基于在第二步骤获得的时基方向上的距离来确定蚀刻处理的终点。

2. 发明授权

US08083960B2 Etching endpoint determination method 有权
标题翻译：蚀刻端点测定方法
公开(公告)号：US08083960B2
公开(公告)日：2011-12-27
申请号：US12189883
申请日：2008-08-12
申请人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
发明人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
IPC分类号： H01L21/302
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A microscopic change in a luminous intensity occurring near an etching endpoint is accurately detected, whereby the endpoint of etching is quickly determined. An etching endpoint determination method for determining an endpoint of etching processing in a plasma etching apparatus that introduces a processing gas into a vacuum chamber, produces plasma by feeding high-frequency energy to a introduced processing gas, and uses the produced plasma to perform plasma processing on a workpiece stored in the chamber includes: a step of sampling light of a pre-set wavelength from light emitted by the plasma produced in the vacuum chamber, acquiring as time-sequential data the luminous intensity of the sampled light of the specific wavelength, and computing a regression line on the basis of the acquired time-sequential data; and a step of computing distances in a time-base direction between the regression line and the time-sequential data which are obtained at the first step. An endpoint of etching processing is determined based in the distances in the time-base direction obtained at the second step.
摘要翻译：精确地检测在蚀刻终点附近发生的发光强度的微观变化，从而快速确定蚀刻的终点。一种蚀刻终点确定方法，用于确定将处理气体引入真空室的等离子体蚀刻装置中的蚀刻处理的终点，通过向引入的处理气体供给高频能量来产生等离子体，并使用所产生的等离子体进行等离子体处理在存储在所述室中的工件上包括：对由所述真空室中产生的等离子体发射的光进行预设波长的光的采样的步骤，获取特定波长的采样光的发光强度作为时序数据，并基于获取的时间序列数据计算回归线; 以及在第一步骤获得的回归线和时间序列数据之间计算时基方向上的距离的步骤。基于在第二步骤获得的时基方向上的距离来确定蚀刻处理的终点。

3. 发明申请

US20120085494A1 Plasma Etching Apparatus 审中-公开
标题翻译：等离子蚀刻装置
公开(公告)号：US20120085494A1
公开(公告)日：2012-04-12
申请号：US13325563
申请日：2011-12-14
申请人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
发明人： Hiroshige Uchida , Daisuke Shiraishi , Shoji Ikuhara , Akira Kagoshima
IPC分类号： C23F1/08
CPC分类号： H01J37/32963 , H01J37/32935
摘要： A plasma etching apparatus includes a vacuum processing chamber for performing plasma processing on a workpiece, a gas introducer, a high frequency power feeder, a spectroscope, and an arithmetic unit for determining an endpoint of etching of the workpiece. The arithmetic unit includes a regression line computing unit for computing a regression line on the basis of time-sequential data of luminous intensity of a specific wavelength sampled by the spectroscope, a distance computing unit for computing a distance from the time-sequential data to the regression line, a computing unit for calculating a distance in a time-base direction by computing a slope of the regression line, and the distance from the time-sequential data to the regression line, computed by the distance computing unit, and an endpoint determiner for outputting an endpoint determination signal on the basis of the distance in the time-base direction computed by the computing unit.
摘要翻译：等离子体蚀刻装置包括用于对工件进行等离子体处理的真空处理室，气体导入器，高频供电器，分光镜和用于确定工件的蚀刻终点的运算单元。算术单元包括：回归线计算单元，用于基于由分光镜采样的特定波长的发光强度的时间序列数据计算回归线;距离计算单元，用于计算从时序数据到回归线，用于通过计算回归线的斜率以及由距离计算单元计算的从时间序列数据到回归线的距离来计算时基方向上的距离的计算单元，以及端点确定器用于基于由计算单元计算的时基方向上的距离来输出端点确定信号。

4. 发明授权

US08114244B2 Method for etching a sample 有权
标题翻译：蚀刻样品的方法
公开(公告)号：US08114244B2
公开(公告)日：2012-02-14
申请号：US12396673
申请日：2009-03-03
申请人： Kousa Hirota , Yasuhiro Nishimori , Hiroshige Uchida
发明人： Kousa Hirota , Yasuhiro Nishimori , Hiroshige Uchida
IPC分类号： G06F19/00
CPC分类号： H01J37/32972 , H01J37/32862 , H01J37/32935
摘要： The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma processing uses an apparatus comprising a vacuum processing chamber, a gas supply apparatus, a plasma generating means for generating plasma, an emission spectroscope for monitoring the plasma emission, and a device for storing the emission spectrum, wherein a non-operating time of the apparatus (idling SS) occurs in which the mass production processing of the wafer is temporarily stopped, wherein during cleaning steps S2 and S2′ before and after idling SS, emission intensities SiF(1) and SiF(2) in the plasma including the information on the state of deposition of reaction products and the temperature on the uppermost surface of the reactor are monitored, and a database S4 is referred to based on these emission spectrums, so that the time of the plasma heating step S3 after the idling SS is controlled to heat the reactor, and after performing plasma heating S3, the next sample is subjected to etching S2.
摘要翻译：本发明提供一种用于进行能够保持稳定的处理轮廓的样品的蚀刻的批量生产处理的方法。用于对承载在真空处理反应器中的晶片进行等离子体处理的蚀刻的批量生产处理的方法使用包括真空处理室，气体供给装置，用于产生等离子体的等离子体产生装置的装置，用于监测等离子体发射和用于存储发射光谱的装置，其中发生装置（空载SS）的非操作时间，其中晶片的批量生产处理暂时停止，其中在清洁步骤S2和S2'之前和之后包括关于反应产物的沉积状态和反应器最上表面的温度的信息的等离子体中的怠速SS，发射强度SiF（1）和SiF（2），并且参考数据库S4 这些发射光谱，使得在空载SS之后的等离子体加热步骤S3的时间被控制以加热反应器，并且在执行等离子体加热S3，对下一个样品进行蚀刻S2。

5. 发明申请

US20080216956A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080216956A1
公开(公告)日：2008-09-11
申请号：US11850722
申请日：2007-09-06
申请人： SHIGERU NAKAMOTO , Tatehito Usui , Kazuhiro Joo , Takashi Fujii , Hiroshige Uchida
发明人： SHIGERU NAKAMOTO , Tatehito Usui , Kazuhiro Joo , Takashi Fujii , Hiroshige Uchida
IPC分类号： C23F1/00
CPC分类号： G01B11/0625 , G01B11/0683 , H01J37/32935 , H01J37/32972 , H01J2237/334
摘要： To provide a plasma processing apparatus using a measuring method of a film thickness of a material to be processed, which method is capable of accurately measuring an actual residual film amount and an etching depth of the layer to be processed. The plasma processing apparatus includes: a detector 11 adapted to detect interference light of a plurality of wavelengths from the surface of a sample in a vacuum container; pattern comparing means 15 adapted to compare actual deviation pattern data relating to the interference light obtained at an arbitrary time point during the processing of the sample, with a plurality of standard deviation patterns which are data of interference light of a plurality of wavelengths relating to processing of another sample obtained before the processing of the sample, and which correspond to a plurality of thicknesses of the film, and adapted to calculate a deviation between the actual deviation pattern data and the standard deviation patterns; deviation comparing means 115 adapted to compare the deviation between the actual deviation pattern data and the standard deviation patterns, with a deviation set beforehand, and to output data relating to the film thickness of the sample at the time; residual film thickness time series data recording means 18 adapted to record the data relating to the film thickness as time series data; and an end point determining device 230 adapted to determine that etching of a predetermined amount is ended, by using the data of the film thickness.
摘要翻译：为了提供使用待处理材料的膜厚测量方法的等离子体处理装置，该方法能够精确地测量待处理层的实际残留膜量和蚀刻深度。等离子体处理装置包括：检测器11，其适于从真空容器中的样品的表面检测多个波长的干涉光; 模式比较装置15，其适于将与在样本处理期间的任意时间点获得的干涉光相关的实际偏差图案数据与作为与处理有关的多个波长的干涉光的数据的多个标准偏差图案进行比较在样品处理之前获得并且对应于膜的多个厚度的另一个样品，并且适于计算实际偏差图案数据和标准偏差图案之间的偏差; 偏差比较装置115，用于比较实际偏差图案数据和标准偏差图案之间的偏差，预先设定的偏差，并输出与当时样品的膜厚有关的数据; 残膜厚度时间序列数据记录装置18，适于将与薄膜厚度相关的数据记录为时间序列数据; 以及适于通过使用膜厚度的数据来确定预定量的蚀刻结束的端点确定装置230。

6. 发明授权

US5803972A Semiconductor fabrication apparatus 失效
标题翻译：半导体制造装置
公开(公告)号：US5803972A
公开(公告)日：1998-09-08
申请号：US202236
申请日：1994-02-25
申请人： Mitsuo Sato , Hiroshige Uchida
发明人： Mitsuo Sato , Hiroshige Uchida
IPC分类号： H01L21/02 , H01L21/00 , H01L21/677 , H01L21/68 , B05C11/00
CPC分类号： H01L21/68 , H01L21/67207 , H01L21/67271 , Y10S134/902
摘要： A semiconductor fabrication apparatus including a plurality of process units for sequentially processing a semiconductor wafer. A heating unit, a cooling unit, a resin coating unit, and a resin hardening unit are included. Also, a sender unit and a process control unit are included besides the process units. In the sender unit, a wafer size sensor is provided in order to detect the size of an original wafer. The wafer size data detected by the sensor is held and processed in the process control unit. Finding the original size of a wafer, the process control unit gives instructions to process units so as to set a correct stop position of the wafer and to select suitable wafer supporting means according to the detected wafer size. Thus, the apparatus is automatically set to a correct state for uniformly processing the semiconductor wafer. In some units, there are provided sensors to find the size of the supporting means, for example, carrier guides, forks, and stoppers. When the information from these sensors do not correspond to the wafer size detected by the wafer size sensor, the process control unit interrupts fabrication processes under execution and gives an alarm to operators.
摘要翻译：一种半导体制造装置，包括用于顺序处理半导体晶片的多个处理单元。包括加热单元，冷却单元，树脂涂覆单元和树脂硬化单元。此外，除了处理单元之外还包括发送器单元和过程控制单元。在发送器单元中，提供晶片尺寸传感器以便检测原始晶片的尺寸。由传感器检测的晶片尺寸数据在过程控制单元中被保持和处理。寻找晶片的原始尺寸，过程控制单元给出处理单元的指令，以便设置晶片的正确停止位置，并根据检测到的晶片尺寸选择合适的晶片支撑装置。因此，该装置被自动设置为用于均匀地处理半导体晶片的正确状态。在某些单元中，提供了用于找到支撑装置的尺寸的传感器，例如载体导向件，叉子和塞子。当来自这些传感器的信息不对应于由晶片尺寸传感器检测到的晶片尺寸时，过程控制单元中断执行中的制造过程并向操作者发出报警。

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