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1. 发明申请

US20080216956A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080216956A1
公开(公告)日：2008-09-11
申请号：US11850722
申请日：2007-09-06
申请人： SHIGERU NAKAMOTO , Tatehito Usui , Kazuhiro Joo , Takashi Fujii , Hiroshige Uchida
发明人： SHIGERU NAKAMOTO , Tatehito Usui , Kazuhiro Joo , Takashi Fujii , Hiroshige Uchida
IPC分类号： C23F1/00
CPC分类号： G01B11/0625 , G01B11/0683 , H01J37/32935 , H01J37/32972 , H01J2237/334
摘要： To provide a plasma processing apparatus using a measuring method of a film thickness of a material to be processed, which method is capable of accurately measuring an actual residual film amount and an etching depth of the layer to be processed. The plasma processing apparatus includes: a detector 11 adapted to detect interference light of a plurality of wavelengths from the surface of a sample in a vacuum container; pattern comparing means 15 adapted to compare actual deviation pattern data relating to the interference light obtained at an arbitrary time point during the processing of the sample, with a plurality of standard deviation patterns which are data of interference light of a plurality of wavelengths relating to processing of another sample obtained before the processing of the sample, and which correspond to a plurality of thicknesses of the film, and adapted to calculate a deviation between the actual deviation pattern data and the standard deviation patterns; deviation comparing means 115 adapted to compare the deviation between the actual deviation pattern data and the standard deviation patterns, with a deviation set beforehand, and to output data relating to the film thickness of the sample at the time; residual film thickness time series data recording means 18 adapted to record the data relating to the film thickness as time series data; and an end point determining device 230 adapted to determine that etching of a predetermined amount is ended, by using the data of the film thickness.
摘要翻译：为了提供使用待处理材料的膜厚测量方法的等离子体处理装置，该方法能够精确地测量待处理层的实际残留膜量和蚀刻深度。等离子体处理装置包括：检测器11，其适于从真空容器中的样品的表面检测多个波长的干涉光; 模式比较装置15，其适于将与在样本处理期间的任意时间点获得的干涉光相关的实际偏差图案数据与作为与处理有关的多个波长的干涉光的数据的多个标准偏差图案进行比较在样品处理之前获得并且对应于膜的多个厚度的另一个样品，并且适于计算实际偏差图案数据和标准偏差图案之间的偏差; 偏差比较装置115，用于比较实际偏差图案数据和标准偏差图案之间的偏差，预先设定的偏差，并输出与当时样品的膜厚有关的数据; 残膜厚度时间序列数据记录装置18，适于将与薄膜厚度相关的数据记录为时间序列数据; 以及适于通过使用膜厚度的数据来确定预定量的蚀刻结束的端点确定装置230。

2. 发明申请

US20070178610A1 Semiconductor Production Apparatus 审中-公开
标题翻译：半导体生产设备
公开(公告)号：US20070178610A1
公开(公告)日：2007-08-02
申请号：US11696878
申请日：2007-04-05
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
IPC分类号： H01L21/00 , H01L21/306 , C23F1/00 , H01L21/302
CPC分类号： H01J37/32972 , H01L21/32137
摘要： A semiconductor production apparatus and method for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by use of a plasma generated in the container. A temporal change of a quantity of an interference light is detected for at least two wavelengths obtained from the surface of the wafer for a predetermined time period of an etching process of the wafer, an etching quantity of the wafer is determined, which varies as long as the etching process proceeds, based upon a particular change arising in the interference light of plural pairs of wavelengths, the plural pairs of the wavelengths corresponding to the etching quantities, respectively.
摘要翻译：一种用于通过使用在容器中产生的等离子体来蚀刻布置在容器中并在其表面上具有膜的半导体晶片的半导体制造装置和方法。在晶片的蚀刻处理的预定时间段内，从晶片表面获得的至少两个波长检测干涉光量的时间变化，确定晶片的蚀刻量，其长度变化随着蚀刻工艺的进行，基于在多对波长的干涉光中产生的特定变化，分别对应于蚀刻量的多对波长。

3. 发明申请

US20050194095A1 Semiconductor production apparatus 审中-公开
标题翻译：半导体生产设备
公开(公告)号：US20050194095A1
公开(公告)日：2005-09-08
申请号：US10790185
申请日：2004-03-02
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Joo , Shigeru Nakamoto
IPC分类号： C23F1/00
CPC分类号： H01J37/32972 , H01L21/32137
摘要： A semiconductor production apparatus for etching a semiconductor wafer arranged in a container and having a film on the surface thereof, by a plasma generated in the container is disclosed. The temporal change of the amount of light is detected for at least two wavelengths obtained from the wafer surface for a predetermined period of the processing time. The etching condition is determined by comparing a predetermined time with the time length between a time point at which the temporal change amount of the light of one of the two wavelengths assumes a maximum value and a time point at which the amount of light of the other wavelength assumes a minimum value.
摘要翻译：公开了一种半导体制造装置，用于通过容器中产生的等离子体来蚀刻布置在容器中并且在其表面上具有膜的半导体晶片。在处理时间的预定时间段内，从晶片表面获得的至少两个波长检测光量的时间变化。通过将预定时间与两个波长中的一个的光的时间变化量取为最大值的时间点与另一个的一个的光的时间点之间的时间长度进行比较来确定蚀刻条件波长假定为最小值。

4. 发明申请

US20120101621A1 Plasma Processing Apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20120101621A1
公开(公告)日：2012-04-26
申请号：US13338722
申请日：2011-12-28
申请人： Tatehito USUI , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito USUI , Kazuhiro Joo , Takashi Fujii
IPC分类号： G06F19/00
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.
摘要翻译：等离子体处理装置包括：检测器，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较器，用于比较在处理期间获得的干涉光上的实际偏差图案数据与多个标准偏差图案对应于膜的两个或更多个厚度，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，偏差比较器，用于比较数据和预定的偏差，并输出当时的样品的胶片的厚度，作为时间序列数据记录的胶片的厚度数据和端点判定单元的数据。

5. 发明申请

US20070202613A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070202613A1
公开(公告)日：2007-08-30
申请号：US11371921
申请日：2006-03-10
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
IPC分类号： H01L21/66
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus is provided using a method of measuring the thickness of a processed material, by which the actual remaining thickness or etching depth of a processed layer can be correctly measured online. The plasma processing apparatus includes a detector 11 for detecting interference light of multiple wavelengths from a surface of a sample during processing, pattern comparing means 15 for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, deviation comparing means 115 for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, remaining-thickness time-series data recording means 18 for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit 230 for deciding completion of a predetermined amount of etching by using the data on the thickness of the film.
摘要翻译：使用测量加工材料的厚度的方法来提供等离子体处理装置，通过该方法可以在线正确地测量处理层的实际剩余厚度或蚀刻深度。等离子体处理装置包括：检测器11，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较装置15，用于比较在处理期间获得的干涉光获得的实际偏差图案数据与多个标准对应于膜的两个或更多个厚度的偏差图案，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，用于比较的偏差比较装置115 数据之间的偏差和预定的偏差，并输出当时的样品的胶片的厚度，用于记录的剩余厚度时间序列数据记录装置18作为时间序列数据的数据，电影以及用于决定预定量的完成的端点决定单元230 通过使用关于膜的厚度的数据进行蚀刻。

6. 发明授权

US08747608B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08747608B2
公开(公告)日：2014-06-10
申请号：US13338722
申请日：2011-12-28
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
IPC分类号： C23C16/52 , C23C16/50 , C23C16/06 , C23C16/22
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit.
摘要翻译：等离子体处理装置包括：检测器，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较器，用于比较在处理期间获得的干涉光上的实际偏差图案数据与多个标准偏差图案对应于膜的两个或更多个厚度，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，偏差比较器，用于比较数据和预定的偏差，并输出当时的样品的胶片的厚度，作为时间序列数据记录的胶片的厚度数据和端点判定单元的数据。

7. 发明授权

US08088247B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08088247B2
公开(公告)日：2012-01-03
申请号：US11371921
申请日：2006-03-10
申请人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
发明人： Tatehito Usui , Kazuhiro Joo , Takashi Fujii
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： G01B11/0625 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus is provided using a method of measuring the thickness of a processed material, by which the actual remaining thickness or etching depth of a processed layer can be correctly measured online. The plasma processing apparatus includes a detector 11 for detecting interference light of multiple wavelengths from a surface of a sample during processing, pattern comparing means 15 for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, deviation comparing means 115 for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, remaining-thickness time-series data recording means 18 for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit 230 for deciding completion of a predetermined amount of etching by using the data on the thickness of the film.
摘要翻译：使用测量加工材料的厚度的方法来提供等离子体处理装置，通过该方法可以在线正确地测量处理层的实际剩余厚度或蚀刻深度。等离子体处理装置包括：检测器11，用于在处理期间检测来自样品表面的多个波长的干涉光;图案比较装置15，用于比较在处理期间获得的干涉光获得的实际偏差图案数据与多个标准对应于膜的两个或更多个厚度的偏差图案，并且计算偏差，对应于在样品处理之前获得的多个波长的干涉光数据的标准偏差图案，用于处理另一个样品，用于比较的偏差比较装置115 数据之间的偏差和预定的偏差，并输出当时的样品的胶片的厚度，用于记录的剩余厚度时间序列数据记录装置18作为时间序列数据的数据，电影以及用于决定预定量的完成的端点决定单元230 通过使用关于膜的厚度的数据进行蚀刻。

8. 发明授权

US06941185B2 Operating method of vacuum processing system and vacuum processing system 有权
标题翻译：真空处理系统和真空处理系统的操作方法
公开(公告)号：US06941185B2
公开(公告)日：2005-09-06
申请号：US10140120
申请日：2002-05-08
申请人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
发明人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
IPC分类号： H01L21/00 , H01L21/677 , G06F19/00
CPC分类号： H01L21/67745 , H01L21/67167 , H01L21/67276 , Y10S414/135 , Y10S414/139 , Y10S414/14 , Y10S438/905 , Y10T29/41
摘要： A vacuum processing apparatus and method wherein a plurality of processing units are for conducting processing, a transfer processing unit is connected with the plurality of processing units for carrying wafers to the processing units, a transfer device is disposed in the transfer processing unit and carries the wafers and cassettes for containing the wafers, and a control unit is provided for conducting transfer control for transferring the wafers from respective cassettes to the transfer processing unit. The wafers are processed by using the plural processing units, and at least two of the cassettes are used. Parallel processing is conducted of applying same processing to the wafers contained on each of the cassettes by applying the same recipe and the wafers, after applying the parallel processing, are returned to the original cassette.
摘要翻译：一种真空处理装置和方法，其中多个处理单元用于进行处理，转移处理单元与用于将晶片运送到处理单元的多个处理单元连接，转移装置设置在转移处理单元中，并携带用于容纳晶片的晶片和盒，以及控制单元，用于进行用于将晶片从相应的盒传送到传送处理单元的传送控制。通过使用多个处理单元处理晶片，并且使用至少两个盒。通过施加相同的配方，对包含在每个盒中的晶片进行相同的处理，并行处理，并且在施加并行处理之后，晶片返回到原始盒。

9. 发明授权

US06885906B2 Operating method of vacuum processing system and vacuum processing system 有权
标题翻译：真空处理系统和真空处理系统的操作方法
公开(公告)号：US06885906B2
公开(公告)日：2005-04-26
申请号：US10140184
申请日：2002-05-08
申请人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
发明人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
IPC分类号： H01L21/00 , H01L21/677 , G06F19/00
CPC分类号： H01L21/67745 , H01L21/67167 , H01L21/67276 , Y10S414/135 , Y10S414/139 , Y10S414/14 , Y10S438/905 , Y10T29/41
摘要： A vacuum processing method and apparatus having one cassette containing wafers which are to be transferred in a preset transferring order to a processing unit via a transfer unit, and another cassette containing wafers to be processed on an emergency basis. Automatic control of processing a wafer from the one cassette is effected, and in response to a request for emergency processing of a water of the another cassette, the automatic processing control of the one wafer from the one cassette is temporarily stopped while completing processing of the wafer of the one cassette returning the same to the one cassette. Emergency processing is initiated by transferring a wafer from the another cassette to the vacuum processing unit via the transfer unit. The processing of the emergency wafer is completed and the processed emergency wafer is returned to the another cassette.
摘要翻译：一种具有一个盒子的真空处理方法和装置，其中一个盒子包含将以预定的转印顺序经由转印单元传送到处理单元的晶片，以及另一个盒子，其容纳在紧急的基础上处理的晶片。自动控制从一个盒子处理晶片，并且响应于对另一盒的水的紧急处理的请求，一个晶片从一个盒的自动处理控制暂时停止，同时完成一个盒的晶片将其返回到一个盒。通过传送单元将晶片从另一个盒传送到真空处理单元来启动紧急处理。完成紧急晶片的处理，将处理过的应急晶片返回到另一个盒。

10. 发明授权

US06853872B2 Operating method of vacuum processing system and vacuum processing system 有权
标题翻译：真空处理系统和真空处理系统的操作方法
公开(公告)号：US06853872B2
公开(公告)日：2005-02-08
申请号：US10140182
申请日：2002-05-08
申请人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
发明人： Kouji Nishihata , Kazuhiro Joo , Shoji Ikuhara , Tetsuya Tahara , Shoji Okiguchi
IPC分类号： H01L21/00 , H01L21/677 , G06F19/00
CPC分类号： H01L21/67745 , H01L21/67167 , H01L21/67276 , Y10S414/135 , Y10S414/139 , Y10S414/14 , Y10S438/905 , Y10T29/41
摘要： A vacuum processing method and apparatus processing units for conducting processing, a transfer processing unit connected with the plurality of processing units for carrying wafers, and a control unit for controlling the processing units. A processing order information storing device stores a processing order of the wafers for the processing units, an operational information signal generating device generates an operational information signal indicating an operable or inoperable state of each of the processing units, an operational information signal storing device stores the operational information signal indicating the state of each of the processing units, and a control device matches and processes the processing order information and the operational information signal, and continues operation without using an inoperable processing unit while using other operable processing units.
摘要翻译：用于进行处理的真空处理方法和装置处理单元，与多个用于承载晶片的处理单元连接的转移处理单元，以及用于控制处理单元的控制单元。处理订单信息存储装置存储用于处理单元的晶片的处理顺序，操作信息信号生成装置生成指示每个处理单元的可操作或不可操作状态的操作信息信号，操作信息信号存储装置将指示每个处理单元的状态的操作信息信号，并且控制设备匹配并处理处理顺序信息和操作信息信号，并且在使用其他可操作的处理单元的同时不使用不可操作的处理单元继续操作。

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