专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110088731A1 SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID 审中-公开
标题翻译：使用泡沫/化学混合清洗液的半导体基板清洗方法
公开(公告)号：US20110088731A1
公开(公告)日：2011-04-21
申请号：US12978933
申请日：2010-12-27
申请人： Hiroshi TOMITA , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
发明人： Hiroshi TOMITA , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
IPC分类号： B08B3/00 , B08B3/02
CPC分类号： H01L21/02057 , B08B3/10 , B08B3/12 , C11D3/0052 , C11D11/0047 , H01L21/02052 , H01L21/67057
摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.
摘要翻译：已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底通过引入界面活性剂的负面区域。或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

2. 发明申请

US20080308132A1 SEMICONDUCTOR SUBSTRATE CLEANING METHOD USING BUBBLE/CHEMICAL MIXED CLEANING LIQUID 审中-公开
标题翻译：使用泡沫/化学混合清洗液的半导体基板清洗方法
公开(公告)号：US20080308132A1
公开(公告)日：2008-12-18
申请号：US12129074
申请日：2008-05-29
申请人： Hiroshi Tomita , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
发明人： Hiroshi Tomita , Hiroyasu Iimori , Hiroaki Yamada , Minako Inukai
IPC分类号： B08B3/12 , B08B3/08
CPC分类号： H01L21/02057 , B08B3/10 , B08B3/12 , C11D3/0052 , C11D11/0047 , H01L21/02052 , H01L21/67057
摘要： A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.
摘要翻译：已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底通过引入界面活性剂的负面区域。或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

3. 发明申请

US20080064212A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080064212A1
公开(公告)日：2008-03-13
申请号：US11892634
申请日：2007-08-24
申请人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
发明人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
IPC分类号： H01L21/311 , H01L21/31
CPC分类号： H01L21/3125 , C23C18/122 , C23C18/1287 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/316 , H01L21/3165 , H01L21/67086
摘要： A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.
摘要翻译：一种半导体器件的制造方法，将全氢化硅氮烷应用于基板; 并将至少将所述基板的表面施加于含有加氢至120℃以上的水的混合物中，在该混合物中施加全羟基聚硅氮烷，从而将全氟聚硅氮烷改性为氧化硅。

4. 发明申请

US20060081335A1 Semiconductor substrate processing apparatus and semiconductor device fabrication method 审中-公开
标题翻译：半导体衬底处理设备和半导体器件制造方法
公开(公告)号：US20060081335A1
公开(公告)日：2006-04-20
申请号：US11246140
申请日：2005-10-11
申请人： Hiroyasu Iimori , Hiroshi Tomita , Hiroaki Yamada
发明人： Hiroyasu Iimori , Hiroshi Tomita , Hiroaki Yamada
IPC分类号： C23F1/00 , C03C15/00
CPC分类号： H01L21/67253 , H01L21/67086
摘要： According to the present invention, there is provided a semiconductor substrate processing apparatus comprising: a processing bath which etches a semiconductor substrate by dipping the semiconductor substrate into a processing solution; an outer bath which is positioned outside said processing bath and receives the processing solution overflowing from said processing bath; a circulation channel which resupplies the processing solution discharged from said outer bath to said processing bath; a heater which adjusts a temperature of the processing solution flowing through said circulation channel; a filter which removes foreign matter in the processing solution flowing through said circulation channel; and a controller which measures, after the semiconductor substrate is loaded into said processing bath, one of the temperature of the processing solution in said processing bath and a time during which the temperature of the processing solution restores a predetermined temperature, calculates a processing time during which the semiconductor substrate is etched on the basis of the measurement result, and etches the semiconductor substrate on the basis of the calculated processing time.
摘要翻译：根据本发明，提供了一种半导体衬底处理装置，包括：通过将半导体衬底浸入处理溶液来蚀刻半导体衬底的处理槽; 位于所述处理槽外部并接收从所述处理槽溢出的处理溶液的外浴; 循环通道，其将从所述外浴排出的处理溶液补给所述处理槽; 调节流过所述循环通道的处理溶液的温度的加热器; 过滤器，其去除流过所述循环通道的处理溶液中的异物; 以及控制器，其在半导体衬底被加载到所述处理槽中之后，测量所述处理槽中的处理溶液的温度和处理溶液的温度恢复预定温度的时间之一，计算处理溶液的处理时间基于测量结果蚀刻半导体衬底，并且基于所计算的处理时间蚀刻半导体衬底。

5. 发明授权

US07985683B2 Method of treating a semiconductor substrate 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US07985683B2
公开(公告)日：2011-07-26
申请号：US12801178
申请日：2010-05-26
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/312
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

6. 发明申请

US20100075504A1 METHOD OF TREATING A SEMICONDUCTOR SUBSTRATE 有权
标题翻译：处理半导体衬底的方法
公开(公告)号：US20100075504A1
公开(公告)日：2010-03-25
申请号：US12574543
申请日：2009-10-06
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
摘要翻译：处理半导体衬底的方法通过干法蚀刻在半导体衬底上形成凸起图案，通过使用化学方法清洗和改变凸形图案的表面，在形成疏水性之后在凸形图案的改性表面上形成疏水性功能表面功能表面，通过使用水冲洗半导体衬底，干燥半导体衬底，以及从凸形图案的疏水功能表面去除疏水官能团。

7. 发明授权

US07097784B2 Etching method and apparatus for semiconductor wafers 失效
标题翻译：半导体晶片的蚀刻方法和装置
公开(公告)号：US07097784B2
公开(公告)日：2006-08-29
申请号：US10742992
申请日：2003-12-23
申请人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
发明人： Yoshihiro Ogawa , Hisashi Okuchi , Hiroshi Tomita , Hiroyasu Iimori
IPC分类号： B44C1/22 , C03C15/00
CPC分类号： H01L21/67248 , H01L21/31111 , H01L21/67086
摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.
摘要翻译：一种用于在包括填充有蚀刻剂并能够设定液体温度和工艺顺序的蚀刻液的蚀刻装置中蚀刻半导体晶片的方法，包括选择适合于半导体晶片的蚀刻的预定蚀刻程序，将半导体晶片的数量计数为在蚀刻之前将其装入蚀刻液中，基于计数得出蚀刻剂的温度下降，将蚀刻剂的液体温度设定为通过将蚀刻剂的温度降加到预定蚀刻温度A而获得的初始温度B 在预定的时刻对蚀刻液中的半导体晶片进行充电，以蚀刻半导体晶片，并在液体温度达到初始温度B之前或之后将液体温度设定在预定蚀刻温度A。

8. 发明申请

US20100240219A1 Method of treating a semiconductor substrate 有权
公开(公告)号：US20100240219A1
公开(公告)日：2010-09-23
申请号：US12801178
申请日：2010-05-26
申请人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
发明人： Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
IPC分类号： H01L21/306
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02071 , H01L21/02101 , H01L21/3086 , H01L21/31133 , H01L21/32139 , Y10S134/902 , Y10S438/906 , Y10S438/964
摘要： A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.

9. 发明授权

US07776756B1 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US07776756B1
公开(公告)日：2010-08-17
申请号：US11878965
申请日：2007-07-30
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

10. 发明申请

US20050230045A1 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device 有权
标题翻译：蚀刻装置，蚀刻溶液的控制方法以及半导体装置的制造方法
公开(公告)号：US20050230045A1
公开(公告)日：2005-10-20
申请号：US10922905
申请日：2004-08-23
申请人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
发明人： Hisashi Okuchi , Hiroyasu Iimori , Mami Saito , Yoshihiro Ogawa , Hiroshi Tomita , Soichi Nadahara
IPC分类号： C23F1/08 , B44C1/22 , C23F1/00 , C23F1/16 , H01L21/00 , H01L21/306 , H01L21/311
CPC分类号： H01L21/67253 , H01L21/31111 , H01L21/67086
摘要： An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
摘要翻译：蚀刻装置包括：包含第一和第二成分和水的蚀刻液的室，蚀刻液中的水的浓度在规定的水平以下; 使蚀刻溶液循环的循环路径; 浓度控制器对来自循环路径的蚀刻液进行采样，并分别控制蚀刻液的浓度; 以及再填充化学液体给料器，其在所述蚀刻溶液中供给包含浓度高于所述第一成分的所述第一成分的再填充药液。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式